Basic Electronics

ASSIGNMENT – I

1.a. Determine the thermal voltage for a diode at a temperature of 20°C.

b. For the same diode of part (a), find the diode current using Shockley’s Eq. if Is=
40 nA, n = 2 (lowvalue of VD), and the applied bias voltage is 0.5V.

2. a. Using Shockley’s equation, determine the diode current at 20°C for a silicon
diode with n =2, Is= 0.1 µA at a reverse-bias potential of -10 V.
b. Is the result expected? Why?

3. In the reverse-bias region the saturation current of a silicon diode is about 0.1
µA (T =20°C).Determine its approximate value if the temperature is increased
to60°C.

4. Determine the dynamic (ac) resistance of diode at room temperature at aforward

current of 10 mA.

5. Determine ID, VD2, and Vofor the circuit of Fig.1.

6.Determine the currents I1, I2, and ID2 for the network of Fig. 2.
7. Determine the level of Vofor each network of Fig. 3(a) and (b) .

8. Determine Vo1 and Vo2 for the networks of Fig. 4 (a) and (b).

9. Determine Voand I for the networks of Fig. 5.

10.Determine Voand IDfor the network of Fig. 6.

11.For the network of Fig. 7, sketch voand determine Vdc .

12.Determine voand the required PIV rating of each diode for the configuration of
Fig. 8. Inaddition, determine the maximum current through each diode.

13. a. Design the network of Fig. 9 to maintain VLat 12 V for a load variation (IL)
from 0 mAto 200 mA. That is, determine RSand VZ.
b. Determine PZ max for the Zener diode of part (a).

14.Design a Zener diode voltage regulator that will maintain an output voltage of
20 V across a 1-kohmload withan input that will vary between 30 V and 50 V. That
is, determine the proper value of RSandthe maximum current IZM.

15. Determine the temperature coefficient of a 5-V Zener diode (rated 25°C value)
if the nominalvoltage drops to 4.8 V at a temperature of 100°C.

16. Compare Avalanche and Zener Breakdown Mechanism.

17. Compare N and P Type Semiconductors.

18. Compare Si, Ge and GaAs intrinsic Semiconductors.

19. Compare Diffusion and Drift Current.

20. Differentiate between Photodiode and LED.

21. Compare half wave, center tapped and bridge rectifiers.

ASSIGNMENT –II
1.If the emitter current of a transistor is 8 mA and I B is 1/100 of IC, determine the
levels of IC and IB.

2. a. Determine α and βif IE= 2.8 mA, IC= 2.75 mA and ICBO= 0.1 µA.
b. Given that β = 120 and IC= 2.0 mA, ICBO= 0.1 µA, find α, ICEO, IE and IB .

3. Given the information appearing in Fig. 1, determine:

a. IC
b. RC
c. RB
d. VCE

4. Given the information provided in Fig. 2, determine:

a. β and α
b. VCC
c. RB
5.Given the information provided in Fig. 3, determine:

a. IC

b. VE

c. VB

d. R1

e. Determine the saturation current (ICsat). Assume Ideal Transistor.

6.Compare BJT operation in Linear Amplification and Switching (Digital) Circuit.

7. Compare three configuration of BJT.

8. If BJT has α of 0.9, what is its current gain in CB,CE and CC configurations?

9. Compare CB and CE output characteristics.

10. Compare NPN and PNP transistors.

11. Explain Base Width Modulation (Early Effect).

12. Compare fixed bias, emitter bias and voltage divider biasing circuits of BJT.