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Apparatus Required:
S.No
1
2
3
5
6
7
8
Name of the
Equipment/ Component
Diode
Resistor
Transistor regulated power
Supply
Voltmeter
Ammeter
Connecting wires
Bread board
Specifications:
For silicon diode IN4007:
Max. Forward current
= 1A
= 0.8V
= 1000V
Circuit Diagrams:
= -65 to 2000 c
Number/range
Quantity
IN4007
100
1
1
(0-30)V,1A
(0-2)V, (0-50)V
(0-100)mA,( 0-100)A
---
1
1
1
ECE
Procedure:
a) Forward Bias:
1.
2.
Apply the supply voltage, VIN in steps of 0.2V from 0V to 1V, after then vary
VIN in steps of 1v and note down the voltage at which current starts. Also note
the exact voltage at which current starts .ie cut-in voltage.
3.
Measure the voltage across the diode (Vd) from voltmeter and current through
the diode (Id) from ammeter for different steps of applied voltage, Vin.
b) Reverse Bias:
4.
5.
ENGINEERING COLLEGE
Page 2
ECE
Measure the voltage across the diode (Vd) from voltmeter and current through
the diode (Id) from ammeter for different steps of applied voltage, Vin.
7.
Draw a graph between the voltage and current for both forward bias and
reverse bias.
8.
Identify the linear region of the forward bias curve and fix the operating point
at the center, calculate the static, dynamic resistances of the diode. Also find
reverse resistance from the reverse bias curve.
Tabular Forms:
a) Forward Bias:
S. No.
Diode Voltage
Vd (Volts)
Diode Current
Id (mA )
1
2
3
4
5
6
7
8
9
10
b) Reverse Bias:
S.NO
Diode Voltage
Diode Current
Vd (Volts)
Id(A)
1
2
3
4
5
6
7
8
9
10
ENGINEERING COLLEGE
Page 3
ECE
Model Graph:
Calculations:
1. Static Forward Resistance ,R =Vf/If=
2. Dynamic Forward Resistance, r =Vf/If=
3. Reverse Resistance=Vr/Ir=
4. Cut-in Voltage of diode=
Result:
ENGINEERING COLLEGE
Page 4
ENGINEERING COLLEGE
ECE
Page 5