FQA40N25 — N-Channel QFET® MOSFET

April 2014

FQA40N25
N-Channel QFET® MOSFET
250 V, 40 A, 70 mΩ

Description Features
This N-Channel enhancement mode power MOSFET is • 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary ID = 20 A
planar stripe and DMOS technology. This advanced • Low Gate Charge ( Typ. 85nC)
MOSFET technology has been especially tailored to • Low Crss ( Typ. 70pF)
reduce on-state resistance, and to provide superior • 100% Avalanche Tested
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.

G
D TO-3PN
S
S

Absolute Maximum Ratings T C

o
= 25 C unless otherwise noted.



   
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©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA40N25 Rev. C2
http://www.Datasheet4U.com
 FQA40N25 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQA40N25 FQA40N25 TO-3PN Tube N/A N/A 30 units

Electrical Characteristics o
TC = 25 C unless otherwise noted.



 
    
 
 


 

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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.8 mH, IAS = 40 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 40 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting T J = 25oC
4. Essentially independent of operating temperature

©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
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©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
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©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V DUT
GS
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS -V DD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

•I SD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

Package drawings are provided as a service to customers considering F airchild components. Drawings may cha nge in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQA40N25 Rev. C2
 FQA40N25 — N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ ®*
AX-CAP®* FRFET® ® tm

BitSiC™ Global Power ResourceSM PowerTrench®

TinyBoost®
Build it Now™ GreenBridge™ PowerXS™
TinyBuck®
CorePLUS™ Green FPS™ Programmable Active Droop™
TinyCalc™
CorePOWER™ Green FPS™ e-Series™ QFET®
TinyLogic®
CROSSVOLT™ Gmax™ QS™
TINYOPTO™
CTL™ GTO™ Quiet Series™
TinyPower™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPWM™
DEUXPEED® ISOPLANAR™ ™ TinyWire™
Dual Cool™ Marking Small Speakers Sound Louder
TranSiC™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TriFault Detect™
EfficentMax™ MegaBuck™ SignalWise™
TRUECURRENT®*
ESBC™ MICROCOUPLER™ SmartMax™
μSerDes™
® MicroFET™ SMART START™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor® MillerDrive™ STEALTH™ UHC®
FACT Quiet Series™ MotionMax™ SuperFET® Ultra FRFET™
FACT® mWSaver® SuperSOT™-3 UniFET™
FAST® OptoHiT™ SuperSOT™-6 VCX™
FastvCore™ OPTOLOGIC® SuperSOT™-8 VisualMax™
FETBench™ OPTOPLANAR® SupreMOS® VoltagePlus™
FPS™ SyncFET™ XS™
Sync-Lock™ 仙童 ™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FQA40N25 Rev. C2