APT20M16B2LL

APT20M16LLL
200V 100A 0.016W

B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™
TO-264
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
LLL
patented metal gate structure.
D
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive G
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT20M16 UNIT

VDSS Drain-Source Voltage 200 Volts
ID
L
Continuous Drain Current @ TC = 25°C

A
5 100
Amps

C
IDM 1 5
Pulsed Drain Current 400
VGS
N I
Gate-Source Voltage Continuous ±30

H
Volts
VGSM Gate-Source Voltage Transient ±40

PD
EC N
Total Power Dissipation @ TC = 25°C 690 Watts

TJ,TSTG
E T
Linear Derating Factor

T IO
Operating and Storage Junction Temperature Range
5.52
-55 to 150
W/°C

TL
NC MA
Lead Temperature: 0.063" from Case for 10 Sec. 300
°C

IAR
A OR
Avalanche Current

V
1
(Repetitive and Non-Repetitive) 100 Amps

AD INF
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 Volts
ID(on) On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Amps
100
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.016 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
050-7014 Rev A 8-2001

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT20M16 B2LL - LLL

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 7020
Coss Output Capacitance VDS = 25V 2380 pF
Crss Reverse Transfer Capacitance f = 1 MHz 180
Qg Total Gate Charge 3 VGS = 10V 174

L
Qgs Gate-Source Charge VDD = 0.5 VDSS 53 nC
Qgd
td(on)
Gate-Drain ("Miller") Charge
Turn-on Delay Time
IC A ID = ID[Cont.] @ 25°C

VGS = 15V
96
14
tr Rise Time

H N VDD = 0.5 VDSS 24

ns
td(off)
tf
Turn-off Delay Time

EC N
ID = ID[Cont.] @ 25°C
RG = 0.6W
29

T 7
Fall Time

E T I O
C MA
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

N
Symbol
IS A OR
Characteristic / Test Conditions

V
Continuous Source Current (Body Diode)
MIN TYP MAX
100
UNIT

AD INF
Amps
ISM Pulsed Source Current 1 (Body Diode) 400
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs) 360 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 6.7 µC
dv/ Peak Diode Recovery dv/ 6 V/ns
dt dt 5

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RqJC Junction to Case 0.18
°C/W
RqJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25°C, L = .6mH, R = 25W, Peak I = 100A
j G L
temperature. 5 The maximum current is limited by lead temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 6 dv/
dt numbers reflect the limitations of the test circuit rather than the
3 See MIL-STD-750 Method 3471 device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.

T-MAXTM (B2) Package Outline TO-264 (L) Package Outline

4.69 (.185) 4.60 (.181)
5.31 (.209) 15.49 (.610) 5.21 (.205) 19.51 (.768)
1.49 (.059) 16.26 (.640) 1.80 (.071) 20.50 (.807)
2.49 (.098) 2.01 (.079)
3.10 (.122)
5.38 (.212) 3.48 (.137)
6.20 (.244)
5.79 (.228)
20.80 (.819) 6.20 (.244)
Drain

21.46 (.845)
Drain

25.48 (1.003)
26.49 (1.043)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123) 2.29 (.090)
2.29 (.090) 2.69 (.106)
0.40 (.016) 1.65 (.065) 2.69 (.106)
0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) 19.81 (.780) Gate
Gate 21.39 (.842)
1.01 (.040)
1.40 (.055) Drain Drain
050-7014 Rev A 8-2001

Source Source
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087) 2.59 (.102) 2.79 (.110)
2.59 (.102) 5.45 (.215) BSC 3.00 (.118) 3.18 (.125)
2-Plcs. 5.45 (.215) BSC
These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs.
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058