APT50M50JVR

500V 77A 0.050Ω

POWER MOS V ® S S

227
Power MOS V® is a new generation of high voltage N-Channel enhancement G D
T-
mode power MOSFETs. This new technology minimizes the JFET effect, SO
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout. "UL Recognized"
ISOTOP ®

• Faster Switching • 100% Avalanche Tested D

• Lower Leakage • Popular SOT-227 Package

G

S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT50M50JVR UNIT

VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 77
Amps
IDM 1
Pulsed Drain Current 308
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 700 Watts
PD
Linear Derating Factor 5.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 77 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
3600

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 500 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
77
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.050 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5534 Rev C

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT50M50JVR

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 16300 19600
Coss Output Capacitance VDS = 25V 2210 3090 pF
Crss Reverse Transfer Capacitance f = 1 MHz 850 1275
Qg Total Gate Charge 3 VGS = 10V 675 1000
Qgs Gate-Source Charge VDD = 0.5 VDSS 95 140 nC
Qgd Gate-Drain ("Miller ") Charge ID = ID[Cont.] @ 25°C
320 480
td(on) Turn-on Delay Time VGS = 15V 25 50
tr Rise Time VDD = 0.5 VDSS 20 40
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 85 125
tf RG = 0.6Ω
Fall Time 12 24

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IS Continuous Source Current (Body Diode) 77
Amps
ISM Pulsed Source Current 1 (Body Diode) 308
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 880 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 31 µC

THERMAL / PACKAGE CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RθJC Junction to Case 0.18
°C/W
RθJA Junction to Ambient 40
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb•in

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 1.21mH, R = 25Ω, Peak I = 77A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.2

0.1 D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.05 0.2

0.1

0.05
0.01
Note:
0.02
0.005
PDM

t1
0.01
SINGLE PULSE t2

Duty Factor D = t1/t2

050-5534 Rev C

0.001 Peak TJ = PDM x ZθJC + TC

0.0005
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT50M50JVR
250 250
VGS=7V, 10V & 15V VGS=15V

ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

6.5V VGS=10V
200 200
VGS=7V 6.5V

150 150
6V 6V

100 100
5.5V 5.5V

50 50
5V 5V

4.5V 4.5V
0 0
0 50 100 150 200 250 0 2 4 6 8 10 12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

250 1.3
TJ = -55°C
NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
ID, DRAIN CURRENT (AMPERES)

TJ = +125°C GS D
200
1.2

VDS> ID (ON) x RDS (ON)MAX.

150 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.1
VGS=10V
100
VGS=20V
TJ = +125°C 1.0
50
TJ = +25°C TJ = -55°C

0 0.9
0 2 4 6 8 0 50 100 150 200 250
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
80 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

1.10
VOLTAGE (NORMALIZED)

60

1.05

40

1.00

20
0.95

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

1.1
2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9
1.0
0.8

0.5
0.7
050-5534 Rev C

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT50M50JVR
400 10µS 50,000
OPERATION HERE
LIMITED BY RDS (ON)

ID, DRAIN CURRENT (AMPERES)

100 100µS
Ciss
50

C, CAPACITANCE (pF)
1mS 10,000
10
5,000 Coss
10mS
5
100mS
DC Crss
1 TC =+25°C
.5 TJ =+150°C
SINGLE PULSE 1,000

.1 500
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 400

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V
TJ =+150°C TJ =+25°C
16 100
VDS=250V

50
12
VDS=400V

8 10

5
4

0 1
200 400 0
600 800 1000 1200 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) * Source Drain
15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
38.2 (1.504) Source terminal.

* Source Gate
Dimensions in Millimeters and (Inches)
050-5534 Rev C

ISOTOP® is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
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APT50M50JVR