APT30M70BVFR(G)

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

300V 48A 0.070Ω

POWER MOS V ® FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested D

FREDFET

• Lower Leakage • Popular TO-247 Package

G
• Faster Switching
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT30M70BVFR(G) UNIT

VDSS Drain-Source Voltage 300 Volts
ID Continuous Drain Current @ TC = 25°C 48
Amps
IDM 1
Pulsed Drain Current 192
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 370 Watts
PD
Linear Derating Factor 2.96 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 48 Amps
EAR 1 30
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
48
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.070 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5548 Rev A

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT30M70BVFR(G)
APT30M70BVFR
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V 4890 5870
Coss Output Capacitance VDS = 25V 882 1235 pF
Crss Reverse Transfer Capacitance f = 1 MHz 277 415
Qg Total Gate Charge 3 VGS = 10V 152 225
Qgs Gate-Source Charge VDD = 0.5 VDSS 35 52 nC
Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 66 99
t d(on) Turn-on Delay Time VGS = 15V 14 28
tr Rise Time VDD = 0.5 VDSS 21 42
ns
t d(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 57 85
tf Fall Time RG = 1.6Ω 10 20

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 48
Amps
ISM Pulsed Source Current 1 (Body Diode) 192
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts
dv/
dt Peak Diode Recovery dv/dt 5 5 V/ns
Reverse Recovery Time Tj = 25°C 225
t rr ns
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 400
Reverse Recovery Charge Tj = 25°C 1.0
Q rr µC
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 4.2
Peak Recovery Current Tj = 25°C 10
IRRM Amps
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 20

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.34
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I ≤ -I [Cont.], di/ = 100A/µs, V
S D dt DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.4

D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.1 0.2
0.05 0.1

0.05
Note:
0.01 0.02
PDM

t1
0.01
0.005
t2

SINGLE PULSE Duty Factor D = t1/t2

050-5548 Rev A

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT30M70BVFR(G)
100 100
VGS=7V, 10V & 15V VGS=15V

ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

6V VGS=10V 6V
80 80
VGS=7V

5.5V 5.5V
60 60

40 5V 40 5V

20 4.5V 20 4.5V

4V 4V
0 0
0 30 60 90 120 150 0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

100 1.3
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
ID, DRAIN CURRENT (AMPERES)

TJ = +25°C
80
TJ = +125°C 1.2
VDS> ID (ON) x RDS (ON)MAX.
60 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.1
VGS=10V
40
VGS=20V
TJ = +125°C 1.0
20
TJ = +25°C TJ = -55°C

0 0.9
0 2 4 6 8 0 20 40 60 80 100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50 1.20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

1.15
40
VOLTAGE (NORMALIZED)

1.10
30

1.05

20
1.00

10
0.95

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

1.1
2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9

1.0
0.8

0.5
0.7
050-5548 Rev A

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT30M70BVFR(G)
200 10µS 15,000
OPERATION HERE
100 10,000
LIMITED BY RDS (ON) 100µS
ID, DRAIN CURRENT (AMPERES) 50 Ciss
5,000

C, CAPACITANCE (pF)
1mS
10 Coss
5 10mS
1,000
100mS Crss

1 DC 500
TC =+25°C
.5 TJ =+150°C
SINGLE PULSE

.1 100
1 5 10 50 100 300 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D
100
VDS=60V
16 50 TJ =+150°C TJ =+25°C
VDS=150V

12 10
VDS=240V
5

8
1

4 .5

0 .1
50 100 0
150 200 250 300 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247 Package Outline

e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Drain

20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800)
1.01 (.040) Gate
1.40 (.055)
Drain
Source

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
050-5548 Rev A

Dimensions in Millimeters and (Inches)