APT106N60B2C6

600V 106A 0.035Ω

COOLMOS
Power Semiconductors Super Junction MOSFET
• Ultra Low RDS(ON)

• Low Miller Capacitance

• Ultra Low Gate Charge, Qg

• Avalanche Energy Rated

D
• Extreme dv/dt Rated

• Dual die (parallel) G

• Popular T-MAX Package
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specified.
Symbol Parameter APT106N60B2C6 UNIT

VDSS Drain-Source Voltage 600 Volts

1 106
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C 68 Amps
2 318
IDM Pulsed Drain Current

VGS Gate-Source Voltage Continuous ±20 Volts

PD Total Power Dissipation @ TC = 25°C 833 Watts

TJ,TSTG Operating and Storage Junction Temperature Range -55 - to 150

°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 260
2 18.6 Amps
IAR Avalanche Current
3 3.4
EAR Repetitive Avalanche Energy ( Id = 18.6A, Vdd = 50V )

EAS Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V ) 2200 mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) 600 Volts

4 0.035 Ohms
RDS(on) Drain-Source On-State Resistance (VGS = 10V, ID = 53A)

Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 50

IDSS μA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 500
6-2010

IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±200 nA

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3.4mA) 2.5 3 3.5 Volts
050-7208 Rev A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
 DYNAMIC CHARACTERISTICS APT106N60B2C6
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance 8390
VGS = 0V
Coss Output Capacitance VDS = 25V 7115 pF
Crss Reverse Transfer Capacitance f = 1 MHz 229
Qg Total Gate Charge 5 308
VGS = 10V
Qgs Gate-Source Charge VDD = 300V 50 nC
Qgd ID = 106A @ 25°C 160
Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time INDUCTIVE SWITCHING 25
tr Rise Time VGS = 15V 79
VDD = 400V ns
td(off) Turn-off Delay Time ID = 106A @ 25°C 277
tf Fall Time RG = 4.3Ω 164
Eon Turn-on Switching Energy 6 INDUCTIVE SWITCHING @ 25°C 2995
VDD = 400V, VGS = 15V
Eoff Turn-off Switching Energy ID = 106A, RG = 4.3Ω 3775
μJ
Eon Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 125°C 4055
VDD = 400V, VGS = 15V
Eoff Turn-off Switching Energy 4200
ID =106A, RG = 4.3Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 92
Amps
ISM Pulsed Source Current 2
(Body Diode) 318
VSD Diode Forward Voltage 4 (VGS = 0V, IS = -106A) 0.9 1.2 Volts
dv
/dt Peak Diode Recovery dv/dt 7
15 V/ns
Reverse Recovery Time Tj = 25°C 1400
t rr ns
(IS = -106A, di/dt = 100A/μs)

Reverse Recovery Charge Tj = 25°C 45

Q rr μC
(IS = -106A, di/dt = 100A/μs)

Peak Recovery Current Tj = 25°C 47

IRRM Amps
(IS = -106A, di/dt = 100A/μs)
THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.15 °C/W
RθJA Junction to Ambient 40
1 Continuous current limited by package lead temperature. 4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471
3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max. 7 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16

0.14 D = 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.12
0.7
0.10
0.5
0.08
Note:

0.06
PDM

t1
6-2010

0.3
0.04 t2

t
050-7208 Rev A

0.1 Duty Factor D = 1/t2

0.02
SINGLE PULSE Peak TJ = PDM x ZθJC + TC
0.05
0
10 -5
10 -4
10-3 10-2 0.1 1 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Typical Performance Curves APT106N60B2C6
225 140
15V VDS> ID (ON) x RDS (ON)MAX.
10V 250μSEC. PULSE TEST
200
120 @ <0.5 % DUTY CYCLE

175 7.0V

ID, DRAIN CURRENT (A)

100
IC, DRAIN CURRENT (A)
150
6.5V 80
125
6.0V
100 60

75
5.5V 40
50
5V TJ= 25°C
20
25 4.5V TJ= 125°C TJ= -55°C
0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8
VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics FIGURE 3, Transfer Characteristics
2.00 120
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE

NORMALIZED TO

V = 10V @ 106A
GS
100
1.60

ID, DRAIN CURRENT (A)

80
VGS = 10V
1.20
VGS = 20V
60

0.80
40

0.40 20

0 0
0 50 100 150 200 250 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TC, CASE TEMPERATURE (C°)
FIGURE 4, RDS(ON) vs Drain Current FIGURE 5, Maximum Drain Current vs Case Temperature
1.20 3.00
BVDSS, DRAIN-TO-SOURCE BREAKDOWN

RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)

.15 2.50
VOLTAGE (NORMALIZED)

1.10
2.00
.05
1.50
.00

1.00
0.95

0.50
.90

.85 0
-50 0 50 100 150 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C) TJ, JUNCTION TEMPERATURE (C°)
FIGURE 6, Breakdown Voltage vs Temperature FIGURE 7, On-Resistance vs Temperature

1.20 1000
VGS(TH), THRESHOLD VOLTAGE

1.10
100
ID, DRAIN CURRENT (A)

1.00
(NORMALIZED)

0.90 10
1ms 100µs
6-2010

0.80 10ms
100ms
1
050-7208 Rev A

0.70

0.60 0.1
-50 0 50 100 150 1 10 100 1000
TC, Case Temperature (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 8, Threshold Voltage vs Temperature FIGURE 9, Maximum Safe Operating Area
 Typical Performance Curves APT106N60B2C6
30,000 14
I = 106A

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

D

12
20,000
VDS= 120V
Ciss 10
C, CAPACITANCE (pF)
10,000 VDS= 300V
8
VDS=480V
1000
Coss 6

100
4
Crss

10 2

0 0
0 100 200 300 400 500 0 100 200 300 400
VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
FIGURE 10, Capacitance vs Drain-To-Source Voltage FIGURE 11, Gate Charges vs Gate-To-Source Voltage
200 400
IDR, REVERSE DRAIN CURRENT (A)

100 350
TJ= +150°C
td(off)
300

td(on) and td(off) (ns)

TJ = =25°C 250
V = 400V
DD
R = 4.3 Ω
200 G
T = 125°C
10 J
L = 100μH
150

100

50 td(on)

1 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
ID (A)
FIGURE 12, Source-Drain Diode Forward Voltage
FIGURE 13, Delay Times vs Current
50 8000
V = 400V V = 400V
DD DD
R = 4.3Ω
G
tf 7000 R
G
= 4.3Ω
T = 125°C T = 125°C Eoff
00
SWITCHING ENERGY (μJ)

J J
L = 100μH L = 100μH
6000
EON includes Eon
diode reverse recovery.
50 5000
tr, and tf (ns)

4000
00
3000
tr
2000
50
1000

0 0
0 50
100 150 200 0 50
100 150 200
ID (A) ID (A)
FIGURE 14 , Rise and Fall Times vs Current FIGURE 15, Switching Energy vs Current

14000
V = 400V
DD
I = 106A
D
12000
T = 125°C
J
Eoff
SWITCHING ENERGY (uJ)

L = 100μH
10000 EON includes
diode reverse recovery.

8000

6000
Eon
6-2010

4000
050-7208 Rev A

2000

0
0 10 20 30 40 50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
Typical Performance Curves APT106N60B2C6

Gate Voltage
10% 90%
Gate Voltage
TJ = 125°C td(off) TJ = 125°C
td(on)

tf
90% Collector Current Collector Voltage
tr

10%
5% 10% 5%
Collector Voltage Collector Current 0

Switching Energy Switching Energy

Figure 17, Turn-on Switching Waveforms and Definitions Figure 18, Turn-off Switching Waveforms and Definitions

APT60DQ60
APT30DF60

V DD IC V CE

D.U.T.

Figure 19,20,
Figure Inductive Switching
Inductive Test
Switching Circuit
Test Circuit

T-MAX™ (B2) Package Outline

100% Sn Plated

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.20 (.244)

20.80 (.819)
Drain

21.46 (.845)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) Gate
1.01 (.040)
1.40 (.055) Drain
Source
6-2010

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
050-7208 Rev A

These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.