APT5010B2LC

APT5010LLC
500V 47A 0.100W

B2LC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage T-MAX™
TO-264
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize Ciss and
Crss. Lower gate charge coupled with Power MOS VITM optimized gate
layout, delivers exceptionally fast switching speeds. LLC
D
• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance • Easier To Drive G
• 100% Avalanche Tested • Faster switching
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT5010 UNIT

VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 47
Amps
IDM 1
Pulsed Drain Current 188
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 520 Watts
PD
Linear Derating Factor 4.16 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 47 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts
ID(on) On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Amps
47
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.100 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
050-5900 Rev A 8-2000

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT5010B2LC - LLC

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 5375 6500
Coss Output Capacitance VDS = 25V 1040 1460 pF
Crss Reverse Transfer Capacitance f = 1 MHz 185 280
Qg Total Gate Charge 3 VGS = 10V 145 220
Qgs Gate-Source Charge VDD = 0.5 VDSS 34 41 nC
Qgd Gate-Drain ("Miller") Charge ID = ID[Cont.] @ 25°C
76 120
td(on) Turn-on Delay Time VGS = 15V 12 24
tr Rise Time VDD = 0.5 VDSS 15 30
ns
td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 28 42
tf RG = 0.6W
Fall Time 4.6 10.0

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IS Continuous Source Current (Body Diode) 47
Amps
ISM Pulsed Source Current 1 (Body Diode) 188
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 590 ns
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) 13 µC

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RqJC Junction to Case 0.24
°C/W
RqJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 2.26mH, R = 25W, Peak I = 47A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.3
Z JC, THERMAL IMPEDANCE (°C/W)

D=0.5
0.1
0.2
0.05
0.1

0.05
Note:
0.01
PDM

0.02 t1
050-5900 Rev A 8-2000

0.005
0.01 t2
SINGLE PULSE
Duty Factor D = t1/t2
q

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT5010B2LC - LLC
100 100
VGS= 8V, 10V & 15V

8V
ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

VGS= 10V & 15V
80 80
7.5V
7.5V

60 60
7V
7V
40 40

6.5V 6.5V
20 20
6V 6V

5.5V 5.5V
0 0
0 50 100 150 200 250 0 2 4 6 8 10 12 14 16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

160 1.5
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
140
ID, DRAIN CURRENT (AMPERES)

TJ = +25°C 1.4
120 TJ = +125°C

VDS> ID (ON) x RDS (ON)MAX. 1.3

100
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80 1.2
VGS=10V
60 VGS=20V
TJ = +125°C 1.1
40
TJ = +25°C
1.0
20
TJ = -55°C
0 0.9
0 2 4 6 8 10 0 20 40 60 80 100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
50 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

40 1.10
VOLTAGE (NORMALIZED)

30 1.05

20 1.00

10 0.95

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

1.1
2.0

1.0
(NORMALIZED)
(NORMALIZED)

1.5

0.9
1.0
0.8
050-5900 Rev A 8-2000

0.5
0.7

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT5010B2LC - LLC
200 20,000
OPERATION HERE
LIMITED BY RDS (ON)
100 10,000
ID, DRAIN CURRENT (AMPERES)
100µS
Ciss
5,000

C, CAPACITANCE (pF)
50

1mS Coss

10 1,000

5 10mS 500
TC =+25°C Crss
TJ =+150°C
SINGLE PULSE

1 100
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V 100
16 TJ =+150°C TJ =+25°C
VDS=250V 50

12
VDS=400V

8 10

5
4

0 1
50 100 0 150 200 250 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

T-MAXTM (B2) Package Outline TO-264 (L) Package Outline

4.69 (.185) 4.60 (.181)
5.31 (.209) 15.49 (.610) 5.21 (.205) 19.51 (.768)
1.49 (.059) 16.26 (.640) 1.80 (.071) 20.50 (.807)
2.49 (.098) 2.01 (.079)
3.10 (.122)
5.38 (.212) 3.48 (.137)
6.20 (.244)
5.79 (.228)
20.80 (.819) 6.20 (.244)
Drain

21.46 (.845)
Drain

25.48 (1.003)
26.49 (1.043)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123) 2.29 (.090)
2.29 (.090) 2.69 (.106)
0.40 (.016) 1.65 (.065) 2.69 (.106)
0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) 19.81 (.780) Gate
Gate 21.39 (.842)
1.01 (.040)
1.40 (.055) Drain Drain
Source Source
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087) 2.59 (.102) 2.79 (.110)
2.59 (.102) 5.45 (.215) BSC
050-5900 Rev A 8-2000

3.00 (.118) 3.18 (.125)

2-Plcs. 5.45 (.215) BSC
These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs.
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058