University College of Science and Technology-UCST

Department of Engineering and Applied-Art

Computer Systems Engineering

Electronic circuits (1) / Lab.

Exp. # 1

Name of Exp / Characteristics of P-N Junction Diode

Student Name: Ameer Wael Talat Elfarra

Student No.: 120217022

Supervisor :

Eng. Yousef Al-Mutayeb

Date of Exp.

‫ م‬2023 / 3 / 5
 Experiment No.1
Characteristics of P-N Junction Diode

Objective:

The objective of this experiment is to observe and plot forward and reverse
V-I Characteristics of a P-N
junction diode.

Apparatus:

❖ Resistor (470Ω, 1k Ω)

❖ Bread Board

❖ Digital Multi-meter

❖ Variable DC power supply(maximum 30V)

❖ Diode

Theory:

Diodes are semiconductor devices which have conductivity

between conductors and insulators. By the
process of doping, P type and N type semiconductors are formed.
By doping with penta-valent and
trivalent element, P-N junction diode is form.
Application of voltage across a diode, transistor etc. is called
Biasing. A diode can be in three states. It
can be in an unbiased, forward biased or reverse biased
condition. In forward biased condition, positive
terminal of diode is connected to positive terminal of battery while
in reverse biased condition; they are
connected in reverse polarities as shown in the Figure 11.1 (a)
and (b).

circuit diagram

(a) (b)

Procedure:
Construct the circuit as shown in the Figure 11.1(a).
1. Do not switch on the power supply. Connect the resistor R
of value 470Ω.
2. Turn on the power supply and increase voltage from the
power supply from 0.1V to 1V in given
steps as shown in the Table 11.1.
3. Measure and record in turn, the voltage VF (V) and
current IF (mA) at each of the voltage settings
shown in the Table 11.1.
 Table 11.1: Forward Characteristics of Diode

Voltage (v) VR (v) IR (A)

1 0.1 0.13 0.2 μA
2 0.2 0.26 0.2 μA
3 0.3 0.34 1.4 μA
4 0.4 0.46 14.8 μA
5 0.5 0.51 143 μA
6 0.6 0.63 1.3 mA
7 0.7 0.72 9.15 mA
8 0.8 0.73 12.26 mA
9 0.9 0.73 14.93 mA
10 1.0 0.73 23 mA

Now construct the circuit as shown in the Figure 11.1(b).

1. Do not switch on the power supply. Connect the resistor R

of value 1kΩ.
2. Turn on the power supply and increase voltage from the
power supply from 0V to 20V in given steps
as shown in the Table 11.2.
3. Measure and record in turn, the voltage VR (V) and
current IR (μA) at each of the voltage settings
shown in the Table 11.2
 Table 11.2: Reverse Characteristics of Diode

Voltage (v) VR (v) IR (μA)

1 2 -2 0.02 μA
2 4 -4 0.04 μA
3 6 -6 0.06 μA
4 8 -8 0.08 μA
5 10 - 10 0.1 μA
6 12 - 12 0.12 μA
7 14 - 14 0.14 μA
8 16 - 16 0.16 μA
9 18 - 18 0.18 μA
10 20 - 20 0.2 μA

Comments :
1. All connections should be neat, clean and tight.
2. Forward-bias voltage beyond breakdown should not be
applied.
3. Reverse-bias voltage beyond breakdown should not be
applied.
4. Connect voltmeter and Ammeter in correct polarities as
shown in the circuit diagram.
5. Do not switch ON the power supply unless you have
checked the circuit connections as per the circuit diagram