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     ASANSOL ENGINEERING COLLEGE


Name –Priyanshu ranjan
Roll no.- 10801619027
Department- Electrical Engineering (3rd semester)

Analog Electronics Lab

Experiment No : 9
Study the transfer and drain characteristics of a JFET

Title:-
Study the transfer and drain characteristics of a JFET and calculate its drain
resistance, mutual conductance and amplification factor.

Objective:
To Study the transfer and drain characteristics of a JFET and calculate its drain
resistance, mutual conductance and amplification factor.

Components required:
1. FET
2. Resistor 100 k

Equipment’s required:
1. DC power supply
2. Breadboard
Theory:-
The junction gate field effect transistor (JFET) is one of the simplest types of field-
effect transistor. JFETs are three-terminal semiconductor devices that can be used as
electronically-controlled switches, amplifiers, or voltage-controlled resistors.
Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not
need a biasing current.
JFETs can have an n-type or p-type channel. In the n-type, if the voltage applied to the gate is
negative with respect to the source, the current will be reduced (similarly in the p-type, if the
voltage applied to the gate is positive with respect to the source). A JFET has a large input
impedance (sometimes on the order of 10^10 ohms), which means that it has a negligible effect
on external components or circuits connected to its gate.

Circuit Diagram:-

Expected graph:-
Circuit Diagram:-
U1
- +
0 A

DC 1e-09Ohm
Q1 V2
BFW10 12V
+ U2
0 V DC 10MOhm
V1 - U3 -
12V 0 V DC 10MOhm
+

GND

Procedure:-
Set up the connections as indicated in the figure. V1 and V2 are Voltmeters (or multi-meter)
and A is ammeter (multi-meter)
Follow the below procedure to obtain the drain characteristics:
1. Adjust the reading of V2 to
a. +0.5V by interchange the polarity VGG
b. 0V (Short the gate terminal to ground)
c. –1V, –2V and – 3V.
2. For every constant VGG values (+0.5, 0, -1, -2, -3 etc.) vary V DD voltage such that V1 is as
indicated in the table below and record the corresponding readings of ID.
Table 1:-

VGS = V2 = Constant (0.5V, 0V, - 1V, - 2V, - 3V)


V1(VDS, V) ID (mA) V1(VDS, V) ID (mA)
0.1 2.0
0.15 2.4
0.2 2.8
0.25 3.0
0.3 3.4
0.4 3.6
0.6 3.8
0.8 4.0
1.0 5.0
1.2 6.0
1.4 8.0
1.6 10
1.8 12

To obtain transfer characteristics:-


Follow the below mentioned procedure to obtain transfer characteristics:

1. Set VDS = 6V. This can be done by adjusting the reading of V1 to6V.
2. Record the readings of ID for different values of V2 as indicated in the table.
3. Repeat step one and 2 for VDS = 9V and VDS =12V
Table 2:-

V1(VGS, V) ID (mA) V1(VGS, V) ID (mA)


0 5.697966 0 6.080151
-0.2 4.859924 -0.2 5.092144
-0.4 4.015684 -0.4 4.188061
-0.6 3.230095 -0.6 3.368855
-0.8 2.527237 -0.8 2.636433
-1.0 1.908302 -1.0 1.990795
-1.2 1.374722 -1.2 1.434803
-1.4 0.926495 -1.4 0.967026
-1.6 0.565767 -1.6 0.590324
-1.8 0.292778 -1.8 0.305653
-2.0 0.108242 -2.0 0.11301

Obtained Graph:-

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