AMERICAN INTERNATIONAL UNIVERSITY–BANGLADESH (AIUB)

FACULTY OF ENGINEERING
ELECTRONIC DEVICES LAB

Spring 2021-2022

Section: R

Group: 01

LAB REPORT ON

Study of Study of Zener Diode

Supervised By
S. M. IMRAT RAHMAN

Submitted By:

Name ID
1. Md. Hamid Uddin 19-40250-1
2. Md. Jisun Abedin Aurnob 19-40318-1
3. Wathin Marma 19-40379-1
4. Rifat Al Mamun Rudro 19-39909-1
5. Jahnnabi Mazumder 19-40294-1

Date of Submission: February 22, 2022

Introduction:
A diode is a two terminal electronic component that conducts the primarily on one direction.
It blocks the current opposite direction. A Zener diode is a special type of diode that allows current
to flow not only from its anode to cathode, but also in the reverse direction, when the so-called
Zener voltage is reached. The arrowhead on a Zener diode symbol points in the direction of
forward current when the diode is forward biased. The Zener diode is normally operated in reverse
breakdown and the current direction is then from anode to cathode.

Theory and Methodology:

There A Zener diode, also known as a breakdown diode, is a severely doped semiconductor
device that operates in reverse. When the voltage between a Zener diode's terminals is reversed
and the potential approaches the Zener voltage (knee voltage), the junction breaks down and
current flows in the other direction.
Here, N and P substrate are diffused together. The junction region is covered with a layer of
silicon dioxide (SiO2). At the same time during construction, the whole assembly is metallized in
order to generate anode and cathode connection. The layer of SiO2 helps to prevent contamination
of the junctions. Thus, is used in the construction of Zener diode. The Zener diode’s operation
depends on the heavy doping of its P-N junction. The junction region is covered with a layer of
silicon dioxide (SiO2). A Zener Diode may be broken down into two types:
• Avalanche Breakdown
• Zener Breakdown

The operation of a Zener diode is like a normal diode in forward biased mode. That means a
large majority current flows through the device when the forward potential is applied to it.
However, a Zener shows variation from a normal diode in the aspect of its doping concentration.
Zener diode is highly doped thus its depletion width is very thin. Due to this, more current flows
through a Zener diode as compared to a normal junction diode. It specifically acts in the breakdown
region in the reverse biased condition. A Zener diode shows two breakdown approach, Zener
breakdown, and avalanche breakdown.
 In the graph we can see that there are 4 regions label in the graph. Where-
• Avalanche region
• Zener Region
• Reverse region
• Forward region
In the avalanche region the Zener diode became ruined due to the heat generation. Not for the
reversed region. So that’s why that region called avalanched region. This breakdown mechanism
is noticed in diodes that are heavily doped. Due to the high concentration of impurities, the width
of the depletion width is narrow. With the increase in reverse potential, a strong electric field is
generated by the depletion region. When a Zener diode operates in the breakdown region, it does
not burn rapidly. However, the reason for this is some external circuit is required in order to protect
the device from the excess current.

Simulation Model:

Fig 01: Zener circuit

Fig 02: Zener circuit

Fig 03: Zener circuit

Result analysis:
Table – 1: Data for V – I characteristics
V VR1 VZ I = (VR1/R1)
(Ampere)
0v 0V 0 0
2 2.012e-6 2 0
4 4.04e-6 4 4.041e-9
6 6.063e-6 6 6.04e-9
8 8.028*10-6 8 8*10-9
10 0.131657 9.868 0.000131657
12 2.061 9.939 0.002061
14 4.043 9.957 0.004043
18 8.025 9.975 0.008025
24 14 9.989 0.014011
30 20.375 9.998 0.020002
36 25.995 10.005 0.026
42 32 10.01 0.032
50 40 10.02 0.040
60 50 10.022 0.049978

Table – 2: Data for Regulation due to load variation

VR (mV) 100 300 500 700
VL 9.846 9.678 9.379 9.170
IL= (VR/R) 98.362 uA 321.541 uA 621.118 uA 721.001 uA

Table – 3: Data for regulation due to supply voltage variation

V 16 12 9 6
VR 10 v 7.5 v 5.625 v 3.75 v
VL 6v 4.5 v 3.375 v 2.25 v

IV Characteristics Curve
Conclusion:
In this experiment we have studied about transistor characteristics in common emitter amplifier
and determine the input and output characteristics of a BJT circuit with a shared emitter. We have
identified the transistor's terminals and write down the value of Beta. Then we design the circuit
connections as shown in the manual figure. For input characteristics, we set the voltage VCE and
then change the voltage VBB to determine the Base current IB using the manual formula below.
We begin by opening the input circuit for output characteristics. Calculate the Collector current IC
by varying the collector voltage VCC in steps of 4V by applying the given formula. Then, by
changing VBB, set the base current IB to 50A and close the input circuit. Calculate IC in each step
by varying the voltage VCC according to the table. After that, we repeat the process for different
IB values. Finally, we plot the input and output characteristics graph and locate a Q point