Table of Contents

Semi Conductor

 Theory .......................................................................................................................................... 2

 Solved Examples .......................................................................................................................... 9

 Exercise - 1 : Basic Objective Questions .................................................................................... 12

 Exercise - 2 : Previous Year JEE Mains Questions ...................................................................... 20

 Exercise - 3 : Advanced Objective Questions ............................................................................ 31

 Exercise - 4 : Previous Year JEE Advanced Questions ............................................................... 39

 Answer Key .................................................................................................................................. 41

SEMI CONDUCTOR
Semi Conductor
1. ENERGY BANDS IN SOLIDS
In case of a single isolated atom, there are single energy levels in
case of solids, the atoms is arranged in a systematic space lattice
and hence the atom is greatly influenced by neighbouring atoms.
The closeness of atoms results in the intermixing of electrons of
neighbouring atoms of course, for the valence electrons in the
outermost shells which are not strongly bounded by nucleus.
Due to intermixing the number of permissible energy levels
increases or there are significant changes in the energy levels.
Hence in case of a solid, instead of single energy levels associated
with the single atom, there will be bands of energy levels.
1.1 Valence Band, Conduction Band & Forbidden Energy Gap
The band formed by a series of energy levels containing the
valence electrons is known as valence band. The valency band
may be defined as a band which is occupied by the valence
electrons or a band having highest occupied band energy.
The conduction band may also be defined as the lowest unfilled
energy band. The separation between conduction band and
valence band is known as forbidden energy gap. There is no
allowed energy state in this gap and hence no electron can stay
in the forbidden energy gap.
1.2 Insulators, Semiconductors and Conductors
On the basis of forbidden band, the insulators, semiconductors
and conductors are described as follows:
1.2.1 Insulators
In case of insulators, the forbidden energy band is very wide.
Due to this fact electrons cannot jump from valence band to
conduction band. In insulators the valence electrons are bond
very tightly to their parent atoms. Increase in temperature enables
some electrons to go to the conduction band.
Conduction Band
E E gap
Valence Band
1.2.2 Semiconductors
In semiconductors, the forbidden band is very small. Germanium
and silicon are the examples of semiconductors. A semiconductor
material is one whose electrical properties lies between insulators
and good conductors. When a small amount of energy is
2
supplied, the electrons can easily jump from valence band to
conduction band. For example when the temperature is increased
the forbidden band is decreased so that some electrons are
liberated into the conduction band.
12..3 Conductors
In case of conductors, there is no forbidden band and the valence
band and conduction band overlap each other. Here plenty of free
electrons are available for electric conduction. A slight potential
difference across the conductor cause the free electrons to constitute
electric current. The most important point in conductors is that due
to the absence of forbidden band, there is no structure to establish
holes. The total current in conductors is simply a flow of electrons.
2. SEMICONDUCTORS
Thus a substance which has resistively in between conductors
and insulators is known as semiconductor.
Semiconductors have the following properties.
(i) They have resistively less than insulators and more than
conductors.
(ii) The resistance of semiconductor decreases with the
increase in temperature and vice versa.
(iii) When suitable metallic impurity like arsenic, gallium etc.
is added to a semiconductors, its current conducting
properties change appreciably.
2.1 Effect of temperatue of Semiconductors
At very low temperature (say 0 K) the semiconductor crystal
behaves as a perfect insulator since the covalent bonds are very
strong and no free electrons are available. At room temperature some
of the covalent bonds are broken due to the thermal energy supplied
to the crystal. Due to the breaking of the bonds, some electrons
become free which were engaged in the formation of these bonds.
The absence of the electron in the covalent bond is represented
by a small circle. This empty place or vacancy left behind in the
crystal structure is called a hole. Since an electron unit negative
charge, the hole carries a unit positive charge.
2.2 Mechanism of conduction of Electrons and Holes
When the electrons are liberated on breaking the covalent bonds,
they move randomly through the crystal lattice.
When an electric field is applied, these free electrons have a
steady drift opposite to the direction of applied field. This
constitute the electric current. When a covalent bond is broken,
a hole is created. For one electron set free, one hole is created.
This thermal energy creates electron-hole pairs-there being as
SEMI CONDUCTOR
many holes as free electrons. These holes move through the
crystal lattice in a random fashion like liberated electrons. When
an external electric field is applied, the holes drift in the direction
of applied field. Thus they constitute electric current.
There is a strong tendency of semiconductor crystal to form a
covalent bonds. Therefore, a hole attracts an electron from the
neighbouring atom. Now a valence electron from nearby covalent
bond comes to fill in the hole at A. This results in a creation of
hole at B. The hole has thus effectively shift from A to B. This
hole move from B to C from C to D and so on.
This movement of the hole in the absence of an applied field is
random. But when an electric field is applied, the hole drifts
along the applied field.
2.3 Carrier Generation and Recombination
The electrons and holes are generated in pairs. The free electrons
and holes move randomly within the crystal lattice. In such a
random motion, there is always a possibility that a free electron
may have an encounter with a hole. When a free electron meets
a hole, they recombine to re-establish the covalent bond. In the
process of recombination, both the free electron and hole are
destroyed and results in the release of energy in the form of heat.
The energy so released, may in turn be re-absorbed by another
electron to break its covalent bond. In this way a new electrol-
hole pair is created.
Thus the process of breaking of covalent bonds and
recombination of electrons and holes take place simultaneously.
When the temperature is increased, the rate of generation of
electrons and holes increases. This is turn increases, the densities
of electrons and hole increases. As a result, the conductivity of
semiconductor increases or resistivity decreases. This is the
reason that semiconductors have negative temperature coefficient
of resistance.
2.4 Pure or Intrinsic Semiconductor and
Impurity or Extrinsic Semiconductors
A semiconductor in an extremely pure from is known as intrinsic
semiconductor or a semiconductor in which electrons and holes
are solely created by thermal excitation is called a pure or intrinsic
semiconductor. In intrinsic semiconductor the number of free
electrons is always equal to the number of holes.
2.4.1 Extrinsic Semiconductors
The electrical conductivity of intrinsic semiconductor can be
increased by adding some impurity in the process of
crystallization. The added impurity is very small of the order of
one atom per million atoms of the pure semiconductor. Such
semiconductor is called impurity or extrinsic semiconductor. The
process of adding impurity to a semiconductor is known as doping.
3
The doping material is either pentavalent atoms (bismuth,
antimony, arsenic, phosphorus which have five valence
electrons) or trivalent atoms (gallium, indium, aluminium, boron
which have three valence electrons). The pentavalent doping
atom is known as donor atom because it donates one electron to
the conduction band of pure semiconductor.
The doping materials are called impurities because they alter the
structure of pure semiconductor crystals.
2.4.2 N–Type Extrinsic Semiconductor
When a small amount of pentavalent impurity is added to a pure
semiconductor crystal during the crystal growth, the resulting
crystal is called as N-type extrinsic semiconductor.
In case of N-type semiconductor, the following points should be
remembered
(i) In N-type semiconductor, the electrons are the majority
carriers while positive holes are minority carriers.
(ii) Although N-type semiconductor has excess of electrons
but it is electrically neutral. This is due to the fact that
electrons are created by the addition of neutral pentavalent
impurity atoms to the semiconductor i.e., there is no
addition of either negative changes or positive charges.
2.4.3 P–Type Extrinsic Semiconductor
When a small amount of trivalent impurity is added to a pure
crystal during the crystal growth, the resulting crystal is called a
P-type extrinsic semiconductor.
In case of P-type semiconductor, the following points should be
remembered
(i) In P-type semiconductor materials, the majority carriers
are positive holes while minority carriers are the electrons.
(ii) The P–type semiconductor remains electrically neutral
as the number of mobile holes under all conditions remains
equal to the number of acceptors.
2.5 P–N Junction Diode
When a P-type material is intimately joined to N-type, a P-N
junction is formed. In fact, merely-joining the two pieces a P-N
junction cannot be formed because the surface films and other
irregularities produce major discontinuity in the crystal structure.
Therefore a P-N junction is formed from a piece of semiconductor
(say germanium) by diffusing P-type material to one half side
and N-type material to other half side.When P-type crystal is
placed in contact with N-type crystal so as to form one piece, the
assembly so obtained is called P-N junction diode.
2.5.1 Forward Bias
When external d.c. source is connected to the diode with p–section
connected to +ve pole and n–section connected to –e pole, the
 SEMI CONDUCTOR
junction diode is said to be reverse biased.
2.5.2 Reverse Bias
When an external d.c. battery is connected to junction diode with
P–section connected to –ve pole and n–section connected to
+ve pole, the junction diode is said to be reverse biased.
P–N JUNCTION is such a device (any way) which offers
low resistance when forward biased and behaves like an
insulator when reverse biased.
Symbol :
P N
2.6 Junction Diode as Rectifier
An electronic device which converts a.c. power into d.c. power
is called a rectifier.
2.6.1 Principle
Junction diode offers low resistive path when forward biased
and high resistance when reverse biased.
2.6.2 Arrangement
The a.c. supply is fed across the primary coil (P) of step down
transformer. The secondary coil ‘S’ of transformer is connected
to the junction diode and load resistance RL. The output d.c.
voltage is obtained across RL.
2.6.3 Theory
Suppose that during first half of a.c. input cycle the junction
diode get forward biased. The conventional current will flow in
the direction of arrow heats.
P N
~ through load resistance RL, the output during both the half cycles
4
The upper end of RL will be at +ve potential w.r.t. the lower end.
The magnitude of output across RL during first half at any instant
will be proportional to magnitude of current through RL, which in
turn is proportional to magnitude of forward bias and which
ultimately depends upon the value of a.c. input at that time.
A.C.
input
D.C.
input
Thus output across RL will vary in accordance with a.c. input.
During second half, junction diode get reverse biased and hence
no–output will be obtained. Thus a discontinuous supply is
obtained.
2.7 Full Wave Rectifier
A rectifier which rectifies both halves of a.c. input is called full
wave rectifier.
2.7.1 Principle
Junction Diode offers low resistive path when forward biased
and high resistive path when reverse biased.
2.7.2 Arrangement
The a.c. supply is fed across the primary coil (P) of step down
transformer. The two ends of S–coil (secondary) of transformer
are connected to P-section of junction diodes D1 and D2. A load
resistance RL is connected across the n–sections of two diodes
and central tapping of secondary coil. The d.c. output is obtained
across secondary.
2.7.3 Theory
Suppose that during first half of input cycle upper end of s-coil is
at +ve potential. The junction diode D1 gets forward biased,
while D2 gets reverse biased. The conventional current due to
D1 will flow along path of full arrows.
When second half of input cycle comes, the conditions will be
exactly reversed. Now the junction diode D2 will conduct and
the convensional current will flow along path of dotted arrows.
Since current during both the half cycles flows from right to left
will be of same nature.
The right end of RL is at +ve potential w.r.t. left end. Thus in full
wave rectifier, the output is continuous.
SEMI CONDUCTOR 5

The majority carriers (e–) in emitter are repelled towards base due
D1
to forward biase. The base contains holes as majority carriers
but their number density is small as it is doper very lightly (5%)
as compared to emitter and collector. Due to the probability of e–
and hole combination in base is small. Most of e– (95%) cross
P into collector region where they are swept away by +ve terminal
of battery VCB.

Corresponding to each electron that is swept by collector, an

electron enters the emitter from -ve pole of collector – base battery.
D2
If Ie, Ib, Ic be emitter, base and collector current respectively then
using Kirchoff first law
A.C.
input

Ie  I b  Ic

D.C. 2.8.2 Action p–n–p Transistor

input

The p–type emitter is forward biased by connecting it to +ve

2.8 Transistor
It is three section semiconductor, in which three sections are
combined so that the two at extreme ends have the same type of
majority carriers, while the section that separates them has the
majority carriers in opposite nature. The three sections of
transistor are called emitter (E), Base (B), collector (C).
pole of emitter – base battery and p–type collector is reverse
biased by connected it to –ve pole of collection - base battery. In
this case, majority carriers in emitter i.e. holes are repelled towards
base due to forward biase. As base is lightly doped, it has low
number density of e–. When hole enters base region, then only
5% of e– and hole combination take place. Most of the holes
reach the collector and are swept away by –ve pole of VCB battery.

Symbol :
p–n–p
Ie E C Ic
E n–p–n C E p–n–p C

VEB VCB
– B Ib
+ – + –
B B

2.8.1 Action of n-p-n Transistor 2.9 Common base Amplifier

In this base of the transistor is common to both emitter and

n–p–n collector.
Ie E C Ic
(a) Amplifier ckt. using n-p-n transistor : The emitter is
forward biased using emitter bias battery (Vcc) & due to
this, the resistance of input circuit bias battery (Vcc), due
VEB VCB to this, resistance of output circuit is large.
B Ib
– + – + n-p-n
forward bias reverse bias Input E C Input
Ie Ic
voltage IcRc voltage
Rc
Fig. shows that, the n-type emitter is forward biased by connecting ~ Vcb
it to -ve pole of VEB (emmitter-base battery) and n-type collector +
VEB
Ib Vcc
is reverse biased by connected it to +ve pole of VCB (collector- B –
base battery). – +
SEMI CONDUCTOR 6

Low input voltage is applied across emitter – base ckt. and and Ic be the emitter current, base current and collector
amplified circuit is obtained across collector - base circuit. If Ie, current respectively. Then according to Kirchhoff’s first
Ib, Ic be the emitter, base and collector current than law
Ie = I b + I c
Ie  I b  I c …(i)

When current Ic flows in collector circuit, a potential drop IcRc IC C2

C1 C
occurs across the resistance connected in collector - base circuit RB B
npn
and base collector voltage will be Ib RC
E
VC
Vcb  Vcc  Ic R c …(ii) VBB Ie
VCC
Input Ic Output
(b) Amplifier circuit using p–n–p Transistor Ib
A.C. signal A.C. signal

C1 pnp C2 3. When the positive half cycle of input a.c. signal voltage
E C IC
comes, it supports the forward biasing of the emitter-base
Ie
circuit. Due to this, the emitter current increases and
RE B
Ib consequently the collector current increases. As a result
VEE VC IC of which, the collector voltage Vc decreases.
VCC 4. Since the collector is connected to the positive terminal of
Input Ie IC Output
A.C. signal A.C. signal VCE battery, therefore decreases in collector voltage means
the collector will become less positive, which means
1. When the positive half cycle of input a.c. signal voltage negative w.r. to initial value. This indicates that during
comes, it supports the forward biasing of the emitter–base positive half cycle of input a.c. signal voltage, the output
circuit. Due to this, the emitter current increases and signal voltage at the collector varies through a negative
consequently the collector current increases. half cycle.
2. As Ic increases, the collector voltage Vc decreases. 5. When negative half cycle of input a.c. signal voltage
3. Since the collector is connected to the negative terminal comes, it opposes the forward biasing of emitter-base
of VCC battery of voltage VCB, therefore, the decrease in circuit, due to this the emitter current decreases and hence
collector voltage means the collector will become less collector current decreases; consequently the collector
negative. This indicates that during positive half cycle of voltage Vc increases i.e., the collector becomes more
input a.c. signal voltage, the output signal voltage at the positive. This indicate that during the negative half cycle
collector also varies through the positive half cycle. of input a.c. signal voltage, the output signal voltage varies
through positive half cycle.
4. During negative half cycle of input a.c. signal voltage,
the output signal voltage at the collector also varies 2.11 Common base Amplifier
through the negative half cycle. Thus in common base
a.c. current gain : It is defined as the ratio of change in collector
transitor amplifier circuit the input signal voltage and the
current as constant collector voltage. It is denoted by ac
output collector voltage are in the same phase.

2.10 Common Emitter Amplifier  I 

 ac   c  [VCB = const.]
Amplifier circuit using n–p-n transitor  I e 

1. The input (emitter base) circuit is forward biased with Voltage gain : It is defined as the ratio of change in output voltage
battery VBB of voltage VEB, and the output (collector- to the change in input voltage. It is denoted by A.
emitter) circuit is reversed biased with battery VCC of
voltage VCE. Due to this, the resistance of input circuit is I c  R out 
I c R out

Av =
low and that of output circuit is high. Rc is a load resistance I e  R in I e R in
connected in collector circuit.
Or Av = AC × resistance gain,
2. When no a.c. signal voltage is applied to the input circuit
where Rout/Rin is called resistance gain.
but emitter base circuit is closed let us consider, that Ie, Ib
SEMI CONDUCTOR 7

Power gain : It is defined as the ratio of change in output power

V
to the change in input power. Therefore,
0 t
change in output power

I c  R out
a.c. power gain =
change in input power I e  R in
V
2
I c R out 0 t
 
I 2 e R in

Or a.c. power gain = 2ac × resistance gain.

4. DIGITAL SIGNALS
2.12 Common Emitter Amplifier
Signals having either of the two levels, 0 or 1, are called digital
a.c. current gain : It is defined as the ratio of the change in signals.
collector to the change in base current. It is denoted by ac.
V
 Ic 
Therefore, ac =  I  [Vce = const.] 5V
 b v 1
0V
0 t
Its value is quite large as compared to 1 and lies between 15 to 50.
Voltage gain : It is the ratio of the change in output voltage to the V
change in input voltage. It is denoted by A.

I c  R out 
I c R out
 0 t
Av = 0V
I b  R in I b R in

Or Av = ac × resistance gain. 1 (–5V)

a.c. power gain : It is the ratio of the change in output power to

the change in input power. 5. LOGIC GATES
A digital circuit which either stops a signal or allows it to pass
change in output power I c  R out
2
through it is called a gate. A logic gate is an electronic circuit
a.c. power gain = =
change in input power I b 2 R in which makes logical decisions. Logic gate has one or more inputs
but one output. Logic gates are the basic building blocks for
Or a.c. power pain = 2ac × resistance gain. most of the digital systems. Variables used at the input and output
are 1’s and 0’s. These are three basic logic gates:
2.13 Relation between  and 
(i) OR gate (ii) AND gate
For both the types of amplifier, we have
(iii) NOT gate.
ie = ib + ic
5.1 OR Gate
Dividing both sides of the above equation by Ic, we get
OR gate is an electronic device that combines A and B to give Y
ie ib as output. In this figure two inputs are A and B and output is Y.
 1
ic ic In Boolean algebra OR is represented by +.
 1/ = (1/) + 1 or 1/ = (1/) 1 = (1)/
A
or  = / (1) Y=A+B
B
3. ANALOG SIGNALS
Truth Table: A truth table may be defined as the table which
Signals which varies continuously with time is called analog gives the output state for all possible input combinations.
signal. A typical analog signal is shown in figure. Circuit used
Logic operations of OR gate are given in its truth table for all
for generating analog signal is called analog electronic circuit.
possible input combinations.
 SEMI CONDUCTOR 8

Input Output
A Y' = A+B Y
A B Y
0 0 0 B Y = A+B
0 1 1
1 0 1 Truth Table :

1 1 1 A B Y’ Y
0 0 0 1
5.2 AND Gate
0 1 1 0
In an AND gate there are two or more inputs and one output. In
1 0 1 0
Boolean algebra AND is represented by a dot (.).
1 1 1 0

A Boolean expression for NOT gate is and it is read as Y = A  B

Y=A. B
B and it is read as Y equals A OR B negated. A NOR function is the
reverse of OR function.
Truth Table

In put Output A
Y = A+B
A B Y B
0 0 0
0 1 0 Truth Table :
1 0 0
In put Output
1 1 1
A B Y
5.3 NOT Gate 0 0 1
NOT gate is an electronic circuit which has one input and one 0 1 0
output. This circuit is so called because output is NOT the same 1 0 0
as input. 1 1 0

5.5 NAND Gate

–
A Y=A
A NAND gate has two or more inputs and one output. Actually
a NAND gate is a NOT–AND gate. If a NOT gate is connected at
the output of a AND gate, we get NAND gate as shown in figure
Boolean expression for NOT gate is Y = A .
and its truth table is given in table.
Truth Table:

In put Output A Y' = A . B Y

B Y = A+B
A Y
0 1
1 0 A B Y’ Y

0 0 0 1
5.4 NOR Gate
0 1 0 1
A NOR gate has two or more inputs and one output. Actually 1 0 0 1
NOR gate is a NOT-OR gate. If a NOT gate is connected at the 1 1 1 0
output of an OR gate, we get NOR gate as shown in figure and its
truth table in table.
SEMI CONDUCTOR 9

Truth Table :
Boolean expression for NAND gate, is Y = A . B and is read as Y
In put Output
equals A and B negated.
Logical symbol of NAND gate is shown in figure and its truth A B Y
table in table. 0 0 1
0 1 1
1 0 1
A
Y=A. B 1 1 0
B
Like NOR gate, NAND gate can also be used to realize all basic
gates : OR, AND and NOT. Hence it is also known as universal
Gate.

SOLVED EXAMPLES
Example - 1
Sol. (a) Ge diode will start conducting before the silicon diode
Find current passing through 2 and 4 resistance in the does so. The effective forward voltage across Ge diode is
circuit shown in figure. (12 – 0.3) V = 11.7 V. This will appear as the output voltage
across the load, i.e.,
V0 = 11.7 volt
The current through RL ,

11.7
i A
5  103
Sol. In the given circuit diode D1 is forward biased and D2 reverse
biased. Hence, D1 will conduct but D2 not. Therefore, current = 2.34 mA
through 4  resistance will be zero while through 2 
Example - 3
10
resistance wil be  5 A. The current gain of a transistor in a common base
2
arrangement in 0.98. Find the change in collector current
Example - 2 corresponding to a change of 5.0 mA in emitter current.
What would be the change in base current ?
(a) Calculate the value of V0 and i if the silicon and
germanium diode start conducting at 0.7 V and 0.3 respectively.
Sol. Given,  = 0.98 and ie = 5.0 mA
From the definition of ,

ic

ie

Change in collector current,

ic = () (ie) = (0.98) (5.0) mA = 4.9 mA

(b) If the Ge diode connection is now reversed, what will Futher, change in base current,
be the new values of v0 and i ? ib = ie – ic = 0.1 mA
 SEMI CONDUCTOR 10

Example - 4 The corresponding truth table is as under.

A transistor is connected in common emitter configuration. A B X= AOR B D = (A ORB) AND B
The collector supply is 8 V and the voltage drop across a
1 0 1 0
resistor of 800  in the collector circuit is 0.5 V. If the
current gain factor () is 0.96, find the base current. 0 1 1 1
0 0 0 0
 0.96 1 1 1 1
Sol.     24
1   1  0.96
Example - 7
The collector current is,
Convert the decimal number 10.625 into its binary
Voltage drop across collector resistor equivalent.
ic 
resistance

Sol. Integral part is 10. It can be converted into its binary part by
0.5
   0.625  103 A using divide by 2 rule.
800
Example - 8
ic How many AM broadcast stations can be accomodated in
From the definition of  = i
b a 100 kHz bandwidth if the highest frequency modultating
Example - 5 a carriage is 5 kHz ?

In a common emitter amplifier, the load resistance of the Sol. Any station being modulated by a 5 kHz signal will produce
output circuit is 500 times the resistance of the input circuit. and upper side frequency 5 kHz above its carries and a
If  = 0.98, then find the voltage gain and power gain. lower side frequency 5 kHz below its carriaer, thereby
requiring a bandwidth of 10 kHz. Thus,
R out Number of stations accomodated
Sol. Given  = 0.98 and  500
R in
Total bandwidth

 0.98 Bandwidth per station
   49
1   1  0.98
100
 = 10
 R out  10
(i) Voltage gain = ()  R  = (49) (500) = 24500
 in  Example - 9

How many 500 kHz waves can be on a 10 km transmission

2 R out  line simultaneously ?
Power gain =     R  = (49) (500) = 1200500
2
(ii)
 in 
Example - 6 Sol. Let  be the wavelength of 500 kHz signal. Then,
Write the truth table for the logical function D = (A OR B)
AND B. c 3.0  108
  m  600 m
f 5.0 106

Sol. A OR B is a logical function, say it is equal to X, i.e., The number of cycle on the line can be found from,

X = A OR B
d 10 103
n   16.67
Now D = X AND B y 600
SEMI CONDUCTOR 11

Example - 10 (b) Population covered = (population density) × (area

covered)
A two wire transmission line has a capcitance of 20 pF/m
2
and a characteristic impedance of 50. = (1200) × (d )
3
(a) What is the inductance per metre of this cable ? = 2400 × 3.14 × 6.4 × 10 × 0.16
(b) Determine the impedence of an infinitely long section = 77.17 lac
of such cable.
(c) Coverage range  h
Sol. (a) The characteristic impedance, Therefore coverage range can be doubled by making height
of the tower four times of 640 m. So, height of the tower
Z  L/C
should be increased by 480 m.
2
 L = (Z ) (C)
Example - 12
2 –12
= (50) (20 × 10 ) H
The core of an optical fibre is made of glass with refractive
= 0.05 H index equal to 1.55 and clad has refractive index 1.51.
(b) The characteristic impedence of a transmission line is Calculate :
the impedence that an infinite length of line would present (a) the critical angle for total internal reflection.
to a power supply at the input end of the line. Thus,
(b) maximum acceptance angle at the air-core interface.
Z  Z0  50 

Example - 11 n 
Sol. (a) c  sin 1  2 
T.V. transmission tower at a paticular station has a height  n1 
of 160 m.
Here, n1 = refractive index of core = 1.55
(a) What is the coverage range ?
and n2 = refractive index of clad = 1.51
(b) How much population is covered by transmission, if
the average population density around the tower is 1200  1.51 
2
per km ?  c  sin 1    55.8
 1.55 
(c) By how much the height of tower be increased to double
(b) Maximum acceptance angle at the air-core interface
its coverage range. Given, radius, radius of earth = 6400 km ?

= sin
1
 n12  n 22 
Sol. (a) Coverage range d = 2 Rh

 sin 1  1.55   1.51 

2 2
3
 2  6400  10  160 m  

= 42.254 km = 20.4°
 SEMI CONDUCTOR 12

EXERCISE - 1 BASIC OBJECTIVE QUESTIONS

1. Major parts of a communication system are : 10. The principal used for the transmission of light signals
(a) transmitter and receiver through the optical fibre is :
(b) receiver and communication channel (a) reflection (b) refraction
(c) transmitter and communication channel (c) interference (d) total internal relfection
(d) transmitter, receiver and communication channel 11. Modulation is the process of superposing :
2. Communication channel consists of : (a) low frequency audio signal on high frequency waves
(a) transmission line (b) optical fibre (b) low frequency radio signal on low frequency audio waves
(c) free space (d) all of these (c) high frequency radio signal on low frequency audio signal.
(d) high frequency audio signal on low frequency radio waves
3. Audio frequency range is from :
12. What happens inside optical fibres ?
(a) 20 Hz to 20 kHz (b) 200 Hz to 2000 Hz
(a) Diffraction (b) Polarization
(c) 2k Hz to 20 kHz (d) 20 kHz to 200 kHz
(c) Interference (d) Total internal reflection
4. Basic components of a transmitter are :
13. In frequency modulated wave
(a) message signal generator and antenna
(a) frequency varies with time
(b) modulator and antenna
(b) amplitude varies with time
(c) signal generator and modulator
(c) both frequency and amplitude varies with time.
(d) message signal generator, modulator and antenna
(d) both frequency and amlitude are time.
5. Range of frequencies allotted for commerical FM radio
14. An oscillator is producing FM waves of frequency 2 kHz
broadcast is : with a variation of 10 kHz. What is the modulating index ?
(a) 88 to 108 MHz (b) 88 to 108 kHz (a) 0.02 (b) 5.0
(c) 8 to 88 MHz (d) 8 to 88 kHz (c) 0.67 (d) 1.5
6. The most commonly used two wire lines are : 15. For effective modulation and transmission of message
(a) parallel wire lines (b) twisted pair wire lines signal, which one of the following condition is true ?
(c) co-axial wire lines (d) all of these (a) Frequency of message signal < frequency of carrier wave
7. A digital signal possesses : (b) Frequency of message signal > frequency of carrier wave
(a) continously varying values (c) Amplitude of message signal > amplitude of carrier wave
(b) only two discrete values (d) Amplitude of message signal < amplitude of carrier wave
(c) only four discrete values 16. The time variations of signals are given as in A, B and C.
(d) none of the above Point out the true statement from the following.
8. Modern communication systems are :
(a) analog circuits (b) digital circuits
(c) combination of analog and digital
(d) none of the above
9. In frequency modulation :
(a) the amplitude of modulated wave varies as frequency
of carrier wave
(b) the frequency of modulated wave varies as amplitude
of modulating wave
(c) the amplitude of modulated wave varies as amplitude (a) A, B and C are analogue signals
of carrier wave (b) A and B are analogue, but C is digital signal.
(d) the frequency of modulated wave varies as frequency (c) A and C are digital but B is analogue signal.
of modulating wave
(d) A and C are analogue but C is digital signal.
SEMI CONDUCTOR 13

17. Which of the following device is full duplex ? 26. Demodulation is the :
(a) Mobile phone (b) Walky-talky (a) process of decoupling of modulating wave from the
(c) Loud speaker (d) Radio carrier wave
18. Modulation is the phenomenon of : (b) process of coupling modulated wave with modulating
(a) superimposing the audio frequency signal over a carrier (c) process of separating carrier wave from the modulated wave
wave (d) process of combining the message signal with the
(b) separating the audio frequency signal from the carrier wave carrier wave
(c) separating carrier wave from the modulated wave 27. For transmitting audio signal properly :
(d) any of (a), (b), or (c) (a) it is first superimposed on high frequency carrier wave
19. The modulating frequency is 5 kHz and the carrier (b) it is first superimposed on low frequency carrier wave
frequency is 100 kHz. What is the band width of AM (c) it is sent directly without superimposing on any wave
transmission ?
(d) none of the above
(a) 105 KHz (b) 95 kHz
28. If a carrier wave of 1000 kHz is used to carry the signal, the
(c) 2.5 kHz (d) 10 kHz length of transmitting antenna will be equal to :
20. Why is it difficult to transmit audio signals directly ? (a) 3 m (b) 30 m
(a) A very high antenna is needed for their propagation (c) 300 m (d) 3000 m
(b) Audio signals have a very high frequency 29. The types of modulation which are possible, are :
(c) Audio signals can’t propagate independently (a) one only (b) two only
(d) Audio signals can’t propagate through air (c) three only (d) none of these
21. Degree of modulation : 30. The AM wave contains three frequencies viz :
(a) can take any value
fc fc  fs f c  fs
(b) should be less than 100% (a) , ,
2 2 2
(c) should exceed 100%
(b) 2 fc, 2( fc + fs), 2(fc – fs)
(d) none of the above
22. If the maximum and minimum voltage of an AM wave are (c) fc, ( fc + fs), (fc – fs)
Vmax and Vmin respectively then modulation factor : (d) fc, fc, fc
31. In AM waves, the amplitude of each side band frequency
Vmax Vmin
(a) m  V  V (b) m  V  V is :
max min max min
(a) Ec (b) mEc
Vmax  Vmin Vmax  Vmin mE c
(c) m  V  V (d) m  V  V (c) (d) 2mEc
max min max min 2
23. The AM wave is equivalent to the summation of : 32. In frequency modulation the amount of frequency
(a) two sinusoidal waves (b) three sinusoidal wave deviation depends on the :
(c) four sinsoidal waves (d) none (a) frequency of audio signal
24. The process of recovering the audio signal from the (b) amplitude of audio signal
modulated wave is known as :
(c) both the frequency and amplitude of audio signal
(a) amplification (b) rectification
(d) none of the above
(c) modulation (d) demodulation
25. In frequency modulation : 33. For a carrier frequency of 100 kHz and a modulating
frequency of 5 kHz, what is the band width of AM
(a) phase angle of the carrier wave is varied
transmission ?
(b) amplitude of the carrier wave is kept constant
(c) amplitude of carrier wave may also be varied (a) 5 kHz (b) 10 kHz
(d) phase angle of carrier wave is kept constant. (c) 20 kHz (d) 200 kHz
SEMI CONDUCTOR 14

34. Electromagnetic waves with frequencies greater than the 43. In satellite communication, the communication satellite :
critical frequency of ionosphere cannot be used for (a) acts as a reflector for a beam of modulated microwave
communication using sky wave propagation, because : from transmitter sent directly towards it
(a) the refractive index of the ionosphere becomes very (b) acts as a reflector for signal reaching there, without
high for f > fc any change in frequency
(b) the refractive index of the ionosphere becomes very (c) receives the coming modulated microwave signal,
low for f > fc amplifies it and returns it to earth at a different frequency
(c) the refractive index of the ionosphere becomes very (d) none of these
high for f < fc 44. The maximum distance upto which TV transmission from
(d) None of the above a TV tower of height h can be received is proportional to :
1/2
35. To cover a population of 20 lakh, a transmission tower (a) h (b) h
3/2 2
should have a height : (radius of the earth = 6400 km, (c) h (d) h
population per square km = 1000) 45. A silicon specimen is made into a p-type semiconductor
7
(a) 25 m (b) 50 m by doping, on an average, one Indium atom per 5×10
(c) 75 m (d) 100 m silicon atoms. If the number density of atoms in the silicon
28 3
specimen is 5×10 atoms/m , then the number of acceptor
36. The area of region covered by the TV broadcast by a TV
6 atoms in silicon per cubic centimeter is :
tower of 100m height is : (radius of the earth = 6.4 × 10 m)
30 3 13 3
8 2 3 2 (a) 2.5×10 atoms/cm (b) 1.0×10 atoms/cm
(a) 12.8  × 10 km (b) 1.28  × 10 km
15 3 36 3
3
(c) 0.64  × 10 km
2 3
(d) 12.8 × 10 km
2 (c) 1.0×10 atoms/cm (d) 2.5×10 atoms/cm

37. The sky wave propagation is suitable for radio-wave of 46. The probability of electrons to be found in the conduction
frequency : band of an intrinsic semicondutor at a finite temperature:
(a) upto 2 MHz (b) from 2 MHz to 20 MHz (a) decreases exponentially with increasing band gap.
(c) from 2 MHz to 30 MHz (d) from 2 MHz to 80 MHz (b) increases exponentially with increasing band gap.
38. An antenna is of height 500 m. What will be its range (c) decreases with increasing temperature.
(Radius of earth is 6400 km) ? (d) is independent of the temperature and the band gap.
(a) 800 km (b) 100 km 47. In the given circuit, if the forward voltage drop for the
(c) 50 km (d) 80 km dipole is 0.5 V, the current is
39. Refractive index of ionosphere is :
(a) zero (b) more than one
(c) less than one (d) one
40. The optical fibres have in an inner core of refractive index
n1 and a cladding of refractive index n2, such that :
(a) n1 = n2 (b) n1 < n2
(c) n1 < n2 (d) n1 > n2 (a) 3.4 mA (b) 2 mA
41. The ground wave propagation is suitable for radio waves (c) 2.5 mA (b) 3 mA
of frequency : 48. Current in the circuit shown here is :
(a) upto 2 MHz (b) from 2 MHz to 20 MHz
(c) from 2 MHz to 30 Hz (d) none of these
42. The electromagnetic waves of frequency 80 MHz to
200 MHz :
(a) can be reflected by troposphere
(b) can be reflected by ionosphere
(c) can be reflected by mesophere (a) (5/40) A (b) (5/50)A
(d) can not be reflected by any layer of earths atmosphere (c) (5/10) A (d) (5/20) A
SEMI CONDUCTOR 15

49. A sinusoidal voltage of peak value 200 V is connected to 53. In a negative logic, voltage reprentation the following
a diode and resistor R in the cirucuit shown so that half- waveform corresponds to :
wave rectification occurs. If the forward resistance of the
diode is negligible compared to R, the rms voltage (in volt)
across R is approximately :

(a) 0000000000 (b) 0101101000

(c) 1111111111 (d) 1010010111
54. A pure semiconductor at room temperature has
(a) 200 (b) 100
3
(a) more electrons/m in its conduction band than holes/
(c) 200 / 2 (d) 280 3
m in its valence band.
50. The circuit shown in the figure contains two diodes D1 3
(b) more electrons/m in its conduction band than a typical
and D2, each with a forward resistance of 50 and with metal.
infinite backward resistance. If the battery voltage is 6V, 3
the current through the 100 resistance (in amperes) is : (c) more electrons/m in its valence band than at T = 0 K.
(d) Noneof the above.
55. The emitter of transistor is doped the heaviest because it:
(I) acts as a supplier of charges carriers.
(II) dissipates maximum powder.
(III) has a large resistance.
(IV) has small resistance.
(a) zero (b) 0.02 Which of the above statements are correct ?
(c) 0.03 (d) 0.036 (a) I and IV (b) I, II and III
51. Find VAB for the following circuit :
(c) I and III (d) None of these
56. Acceptor atoms introduced into a pure semiconductor at
room temperature :
(a) increase the number of electrons in the conduction
band
(b) increase the number of holes in the valence band
(a) 10 V (b) 20 V (c) lower the Fermi level.
(c) 30 V (d) None of these (d) increase the electrical resistivity.
52. The following configuration of gate is equivalent to :
57. Which of the following is NOT true when a reverse bias is
applied to a p-n junction ?
(a) Electrons flow from the p to the n side.
(b) Holes flow from the p to the n side.
(c) the electric field in the depletion zone increases
(d) The potential difference across the depletion zone
(a) NAND (b) XOR
increases
(c) OR (d) None of these
SEMI CONDUCTOR 16

58. The gap between the valence and conduction bands of a 62. The following circuit represents :
certain semiconductor is 0.85 eV. When this semiconductor
is used to form a light emitting diode, the wavelength of
the light emitted.
–6
(a) is in a range above 1.5×10 m
–6
(b) is in a range below 1.5×10 m (a) OR gate (b) XOR gate
–6
(c) is always 1.5×10 m (c) AND gate (d) NAND gate
–6
(d) is in a range centered on 1.5×10 m. 63. The circuit in the below figure represents which of the
logic operations?
59. The forward characteristic of p-n junction is shown in the
figure. What is the dynamical resistance of p-n junction at
0.9 V ?

(a) OR (b) AND

(c) NOT (d) NOR
64. In forward biasing of the p-n junction,
(a) the positive terminal of the battery in connected to p-
side and the depletion region becomes thin.
(b) the positive terminal of the battery is connected to p -
side and the depletion region becomes thick.
(c) the positive terminal of the battery is connected to n-
(a) 130 (b) 100 side and the depletion region becomes thin.
(c) 50 (d) 30 (d) the positive terminal of the battery is connected to n-
60. Two ideal p-n junction diodes are connected in an side and the depletion region becomes thick.
electrical circuit with resistances to a battery of 12V as 65. A p-n photodiode is fabricated from a semiconductor with
shown in the figure. What will be the current flowing in a band gap of 2.5 eV. It can detect a signal of wavelength:
the circuit? (a) 4000 nm (b) 6000 nm
(c) 4000 Å (d) 6000 Å
66. When germanium is doped with phosphorus, the doped
material has :
(a) excess positive charge
(b) excess negative charge
(c) more negative current carriers
(a) 0.2A (b) 1.7A (d) more positive current carriers
(c) 2A (d) 2.4A 67. In the reverse-biased p-n junction, the current is of the
order of :
61. An n-type and p-type silicon semiconductor can be
obtained by doping pure silicon with : (a) ampere (b) milliampere

(a) sodium and magnesium, respectively (c) microampere (d) nanoampere

68.
(b) phosphorus and boron, respectively
(c) boron and phosphorus, respectively
(d) indium and sodium, respectively
Reverse bias applied to a junction diode
(a) raises the potential barrier
(b) increasing the minority carriers of current
(c) increases the minority carriers of current
(d) lowers the potential barrier
SEMI CONDUCTOR 17

69. At absolute zero, Si acts as : 77. An n-type and p-type silicon can be obtained by doping
(a) non-metal (b) metal pure silicon with :
(c) insulator (d) None of these (a) arsenic and phosphorous, respectively
70. The current gain for a transistor working as common base (b) indium and aluminium, respectively
amplifier is 0.96. If the emitter current is 7.2 mA, then the (c) phosphorous and indium, respectively
base current is :
(d) aluminium and boron, respectively
(a) 0.29 mA (b) 0.35 mA
78. Which of the following statement is correct for an n-type
(c) 0.39 mA (d) 0.43 mA
semiconductor?
71. When the emitter current of a transistor is changed by 1
(a) The donor level lies below the bottom of the conduction
mA, its collector current changes by 0.990 mA. The
band
common base short current gain  for the transistor is:
(a) 0.099 (b) 1.01 (b) The donor level lies closely above the top of the valence
band
(c) 1.001 (d) 0.990
(c) The donor level lies at the halfway mark of the forbidden
72. At elevated temperature, few of covalent bonds of Si or
energy gap
Ge are broken and a vacancy in the bond is created.
Effective charge of vacancy or hole is : (d) None of the above
(a) positive 79. In a p-type semiconductor, the majority and minority charge
(b) negative carriers are respectively,
(c) neutral (a) protons and electrons
(d) sometimes positive and sometimes negative (b) electrons and protons
73. In pure form, Ge or Si, a semiconductor is called: (c) electrons and holes
(a) instrinsic semiconductor, ne = nh = ni (d) holes and electrons
(b) extrinsic semiconductor, ne = nh = ni 80. Which statement is correct ?
(c) doped semiconductor (a) n-type germanium is negatively charged and p-type
(d) None of the above germanium is positively charged
74. If I is total current through an intrinsic semiconductor and (b) both n-type and p-type germanium are neutrals
Ie is electron current and Ih is hole current, then : (c) n-type germanium is positively charged and p-type
germanium is negatively charged
Ih Ie
(a) Ie  (b) I  I (d) both n-type and p-type germanium are negatively
I h
charged
(c) Ie – Ih = I (d) Ie + Ih = I
81. If ne is number density of electrons in conduction band
75. In equilibrium condition, the rate of generation of electron- and nh is number density of holes in valence band, then
hole pairs: for an extrinsic semiconductor at room temperature, (ni =
(a) is more than rate of recombination of electron and hole number density of intrinsic pairs)
pairs
ne 2 nh 2
(b) is less than rate of recombination of electron and hole (a) n  n i (b) n  n i
pairs h e

(c) equals to rate of recombination of electron and hole

pairs (c) n e n h  ni2 (d) n e  n h  n i2

(d) is always zero 82. Carbon is more resistive than germanium and silicon. Then,
76. A pure semicondutor behaves as a good conductor at : order of energy gap is :

(a) room remperature (b) low temperature (a) C > Ge > Si (b) C > Si > Ge
(c) Si > Ge > C (d) C = Si = Ge
(c) high temperature (d) Both (b) and (c)
SEMI CONDUCTOR 18

83. The forbidden energy gap in the energy bands of 89. A zener diode differs from a p-n junction that
germanium at room temperature is about : (a) zener diode is made from very lightly doped p-n
(a) 1.1 eV (b) 0.1 eV junction
(c) 0.67 eV (d) 6.7 eV (b) zener diode is made from a heavily doped p-n junction
84. The depletion layer in the p-n junction region is caused (c) zener diode is made from a metal piece
by: (d) zener diode is made from a heavily doped p-type
(a) drift of holes semiconductor
(b) diffusion of charge carriers 90. When a transistor is biased as follows:
(c) migration of impurity ions
(d) drift of electrons
85. Symbol of a p-n junction diode is an arrow, its direction
indicates :
Then, it is said to be in :
(a) solid state (b) active state
(a) nothing its just a symbol (c) inactive state (d) passive state
(b) direction of flow of electrons
(c) direction of conventional current when it is forward
biased
(d) direction of electric field
86. In forward bias, forward current obtained from the p-n 91.
junction diode is :
(a) due to injection of electrons in p-side
(b) due to injection of holes in n-side
In above transfer characteristics of an n-p-n transistor in
(c) both (a) and (b) CE configuration; cut-off region, active region, saturation
(d) due to flow of electrons from negative terminal of supply region respectively, are :
to its positive terminal (a) II, III and I (b) III, I and II
87. Dynamic resistance of a diode is given by : (c) III, II and I (d) I, II and III
V V 92. In an n-p-n circuit transitor, the collector current is 10 mA.
(a) rd  (b) rd   If 80% electrons emitted reach the collector, then :
I I
(a) the emitter current will be 7.5 mA
Threshold voltage Breakdown voltage
(c) rd  (d) rd  (b) the base current will be 2.5 mA
Current Current
(c) the base current will be 3.5 mA
88. For the given circuit of p-n junction diode, which of the (d) the emitter current will be 15 mA
following statement is correct ?
93. Due to diffusion of electrons from n to p-side,
I. electron-hole combination across p-n junction occurs.
II. an ionised acceptor is left in the p-region.
III. an ionised donor is left in the n-region.
IV. electrons of n-side comes to p-side and electron-hole
(a) in forward biasing, the voltagte across R is V combination takes palce in p-side
(b) In forward biasing, the voltatge across R is 2V Correct options are :
(c) In reverse biasing, the voltage across R is V (a) I and II (b) II and III
(d) In reverse biasing, the voltage across R is 2V (c) II and IV (d) II, III and IV
SEMI CONDUCTOR 19

94. Which of the given statements are correct regarding 97. Assetion : The electrical conductivity of n-type
unbiased p-n junction ? semiconductor is higher than that of p-type
I. Drift and diffusion currents occur p to n-side. semiconductor at a given temperature and voltage applied.
II. Initially, diffusion current is large and drift current is Reason : The mobility of electron is higher than that of
small. hole.
III. Finally, diffusion and drift current grow to be equal in (a) A (b) B
magnitude (c) C (d) D
IV. Under equilibrium there is no net current across p-n 98. Assertion : NAND or NOR gates are called digital building
junction plane. blocks.
(a) I and IV (b) I, II and III Reason : The repeated use of NAND (or NOR) gates can
(c) II, III and IV (d) All of these produce all the basic or complicated gates.
95. Which of these are correct ? (a) A (b) B
I. In forward biasing, holes from p-side crosses junction (c) C (d) D
and reach n-side.
99. Assertion : The color of light emitted by a LED depends
II. In forward biasing, electrons from n-side crosses on its forward biasing.
junction and reach p-side.
Reason : The reverse biasing of p-n junction will increase
III. In n-side, holes are minority charge carriers. the width of depletion layer.
IV. In p-side, electrons are minority charge carriers.
(a) A (b) B
(a) I, II and III (b) I, III and IV
(c) C (d) D
(c) II, III and IV (d) I, II, III and IV
100. Assertion : The resistance of an intrinsic semiconductor
Assertion/Reason decreases with the increase in temperature.
(A) Assertion and Reason are true and the Reason is the correct Reason : The concentration of electrons becomes more
explanation of the Assertion. than the concentration of holes in an intrinsic
(B) Assertion and Reason are true but the Reason is not a semiconductor when heated.
correct explanation of the Assertion.
(a) A (b) B
(C) Assertion is true but the Reason is false.
(c) C (d) D
(D) Assertion is false but the Reason is true.
96. Assertion : The temperature coefficient of resistance is
positive for metals and negative for p-type semiconductor.
Reason : The effective charge carriers in metals are
negatively charged whereas in p-type semiconductor, they
are positively charged.
(a) A (b) B
(c) C (d) D
 SEMI CONDUCTOR 20

EXERCISE - 2 PREVIOUS YEAR JEE MAINS QUESTIONS

1. By increasing the temperature, the specific resistance of a
conductor and a semiconductor (2002)
(c)
(a) increases for both (b) decreases for both
(c) increases, decreases (d) decreases, increases
2. In the middle of the depletion layer of a reverse- biased
p-n junction, the (2003)
(a) electric field is zero (b) potential is maximum
(c) electric field is maximum (d) potential is zero
3. When npn transistor is used as an amplifier. (2004)
(d)
(a) electrons move from collector to base
(b) holes move from emitter to base
(c) electrons move from the base to collector
(d) holes move from base to emitter 8. If the lattice constant of this semiconductor is decreased,
4. A piece of copper and another of germanium are cooled then which of the following is correct ? (2006)
from room temperature to 77K, the resistance of (2004)
(a) copper increases and germanium decreases
(b) each of them decreases
(c) each of them increases
(d) copper decreases and germanium increases
5. In a common base amplifer, the phase difference between
the input signal voltage and output voltage is (2005) (a) All Ec, Eg, Ev increase
(a)  (b)  (b) Ec and Ev, increase, but Eg decreases
(c)  (d) 0 (c) Ec and Ev, decrease, but Eg increases
6. In a common base mode of a transistor, the collector current (d) All Ec, Eg, Ev decrease
is 5.488 mA for an emitter current of 5.60 mA. The value of 9. If in a p-n junction diode, a square input signal of 10V is
the base current amplification factor () will be (2006) applied as shown (2007)
(a) 49 (b) 50
(c) 51 (d) 48
7. In the following, which one of the diodes reverse biased ?

The the output signal across RL will be

(a) (2006)

(a) (b)

(b)

(c) (d)
SEMI CONDUCTOR 21

10. Carbon, silicon and germanium have four valence electrons (a)
each. At room temperature which one of the following
statements is most appropriate ? (2007)
(a) The number of free electrons for conduction is
significant only in Si and Ge but small in C. (b)
(b) The number of free conduction electrons is significant
(c)
in C but small in Si and Ge.
(c) The number of free conduction electrons is negligibly
small in all the three. (d)
(d) The number of free electrons for conduction is
significant in all the three. 14. The combination of gates shown below yields (2010)
11. A working transistor with its three legs marked P, Q and R
is tested using a multimeter. No conduction is found
between P and Q. By connecting the common (negative)
terminal of the multimeter to R and the other (positive)
terminal to P or Q, some resistance is seen on the multimeter.
Which of the following is true for the transistor ? (2008)
(a) It is an npn transistor with R as base
(b) It is a pnp transistor with R as collector (a) OR gate (b) NOT gate
(c) It is a pnp transistor with R as emitter (c) XOR gate (d) NAND gate
(d) None of these 15. The circuit has two oppositely connected ideal diodes
12. In the circuit below, A and B represent two inputs and C in parallel. What is the current flowing in the circuit ?
represents the output. (2008) (2006)

(a) 1.33 A (b) 2.00 A

(c) 1.71 A (d) 2.31 A
The circuit represents 16. If the ratio of the concentration of electrons to that of
(a) NOR gate (b) AND gate 7
holes in a semiconductor is and the ratio of currents is
(c) NAND gate (d) OR gate 5
13. The logic circuit shown below has the input waveforms 7
‘A’ and ‘B’ as shown. Pick out the correct output waveform. , then what is the ratio of their drift velocities ?(2006)
4
(2009)
4 4
(a) (b)
5 7

5 5
(c) (d)
8 4
17. The minimum potential difference between the base and
emitter required to switch a silicon transistor ‘ON’ is
approximately (2008)
(a) 1 V (b) 3 V
Output is
(c) 5 V (d) 4.2 V
SEMI CONDUCTOR 22

18. Output Y is given by (2006) (a) 2 V (b) 1.4 V

(c) 1.3 V (d) 0.7 V
25. A potential barrier of 0.50 V exists across a p-n junction. If
–7
the depletion region is 5.0 × 10 m wide, the intensity of
the electric field in this region is (2002)
6 5
(a) 1.0 × 10 V/m (b) 1.0 × 10 V/m
5 6
(c) 2.0 × 10 V/m (d) 2.0 × 10 V/m
(a) (X + Y) Z (b)  X . Y  Z 26. Which of the following statements is true for an n-type
semiconductor ? (2004)
(c) X . Y  Z (d)  X . Y  . Z (a) The donor level lies closely below the bottom of the
19. An oscillator is nothing but an amplifier with (2007) conduction band.

(a) positive feedback (b) negative feedback (b) The donor level lies closely above the top of the
valence band.
(c) large gain (d) no feedback
(c) The donor level lies at the halfway mark of the
20. The current gain  for a transistor is 49 and the emitter
forbidden energy gap
current is 1 mA. The base current in A is : (2003)
(a) 20 (b) 40 (d) None of above

(c) 10 (d) 5 27. A 2 V battery is connected across the points A and B as

shown in the figure given below. Assuming that the
21. What is the conductivity of a semiconductor, if electron
12 3 13 3 resistance of each diode is zero in forward bias, and infinity
density = 5 × 10 /cm and hole density = 8 × 10 /cm ?
2 –1 –1 2 –1 –1
in reverse bias, the current supplied by the battery when
(e = 2.3 m V s , h = 0.01 m V s ) (2007)
its positive terminal is connected to A, is (both R = 10)
(a) 5.634 (b) 1.968 (2002)
(c) 3.421 (d) 8.964
22. The oupt of NAND gate is 0, (2004)
(a) if both inputs are 0
(b) if one input is 0 and the other input is 1
(c) if both inputs are 1
(d) either if both inputs are 1 or if one of the inputs is 1 and
other 0. (a) 0.2 A (b) 0.4 A

23. The correct option for getting X = 1 from the given circuit (c) zero (d) 0.1 A
is (2003) 28. In a forward biased p-n junction diode, the potential barrier
in the depletion region is of the form (2006)

(a) (b)

(a) A = B = C = 1 (b) A = B = 1 and C = 0

(c) A = C = 1 and B = 0 (d) A = 0 and B = C = 1
24. A silicon diode has a threshold voltage of 0.7 V. If an input
voltage given by 2sin(t) is supplied to a half wave rectifier
circuit using this diode, the rectified output has a peak (c) (d)
value of (2004)
SEMI CONDUCTOR 23

29. A transistor connected in common emitter configuration 35. A light emitting diode (LED) has a voltage drop of 2 volt
has input resistance RCE = 2 and load resistance of 5 k. across it and passes a current of 10 mA. When it operates
If  = 60 and an input signal 12 mV is applied, calculate the with 6 volt battery through a limiting resistor R, the value
voltage gain, the power gain and the value of output of R is. (2008)
voltage. (2002)
(a) 40 k  (b) 4 k 
(c) 200  (d) 400 
36. In an n type semiconductor, the fermi level lies (2007)
(a) in the forbidden energy gap nearer to the conduction band
(b) in the forbidden energy gap near to the valence band
(c) in the middle of the forbidden energy gap
(d) outside the forbidden energy gap.
(a) AV = 150, Vout = 1.8 V, and power gain = 9000
37. Determine the binary equivalent of 6.25 (2002)
(b) AV = 20, Vout = 1 V, and power gain = 2000
(a) 110.01 (b) 1100.01
(c) AV = 150, Vout = 1.5 V, and power gain = 8500
(c) 11.001 (d) 11.01
(d) AV = 20, Vout = 1.5 V, and power gain = 2000
38. A Si and a Ge diode has identical physical dimensions.
30. To get an output 1 from the circuit shown in the figure, the The band gap is large than that in Ge. An identical reverse
input must be (2002) bias is applied across the diodes. (2008)
(a) The reverse current in Ge is larger than that in Si
(b) The reverse current in Si is larger than that in Ge
(c) The reverse current is identical in the two diodes
(d) The relative magnitude of the reverse currents cannot
(a) A = 0, B = 1, C = 0 (b) A = 1, B = 0, C = 0
be determined from the given data only.
(c) A = 1, B = 0, C = 1 (d) A = 1, B = 1, C = 0
39. When a semiconductor is heated, its resistance : (2006)
31. The current gain a of  transistor in common base mode is
(a) decreases
0.995. It gain  in the common emitter mode is (2003)
(b) increases
(a) 200 (b) 99
(c) remains the same
(c) 0.995 (d) None of these
32. Consider a p-n junction as a capacitor formed with p and n (d) may increase or decrease depending upon semiconductor
materials acting as thin metal electrons and depletion layer 40. When the temperature of a semiconductor is increased,
width acting as separation between them. Basing, on this its electrical conductivity : (1993)
assumpe that n-p-n transistor is working as an amplifier in (a) increases
CE configuration. If C1 and C2 are the base emitter and
(b) decreases
collector emitter junction capacitance, then (2006)
(c) remains the same
(a) C1 > C2 (b) C1 < C2
(d) increases at first and then decreases
(c) C1 = C2 (d) C1 = C2 = 0
41. A piece of copper and another of germanium are cooled
33. A n-p-n transistor power amplifier in CE configuration gives
from room temperature to 80 K. The resistance of : (2003)
(a) voltage amplification only (2005)
(a) each of them increases
(b) currents amplification only
(b) each of them decreases
(c) both current and voltage amplification
(c) cooper increases and germanium decreases
(d) only
(d) cooper decreases and germanium increases
34. In a full wave rectifier, the rms value of AC component of
the waves (2002) 42. Zener diode is used for : (1993)
(a) equal to DC value (b) more than DC value (a) rectification (b) amplification
(c) less than DC value (d) zero (c) stabilization (d) modulation
SEMI CONDUCTOR 24

43. For a transistor, in a common-emitter arrangement, the AC 50. What is the voltage gain in a common-emitter amplifier,
current gain  is given by : (2004) where input resistance is 3 and load resistance 24 ?
(Take  = 0.6) (1998)
(a)    Ic / IB vc  constant (b)    IB / Ic vc  constant
(a) 8.4 (b) 4.8
(c) 2.4 (d) 1.2
(c)    Ic / Ie  vc  constant (d)    Ie / Ic  vc  constant
51. The diode used in the circuit shown in the figure has a
44. n-p-n transistors are preferred to p-n-p transistors because : constant voltage drop of 0.5 V at all current and a maximum
(a) they have low cost (2007) power rating of 100 milliwatts. What should be the value
(b) they have low dissipation energy of the resistor R, connected in series with the diode, for
obtaining maximum current ? (1997)
(c) they are capable of handling large power
(d) electrons have high mobility than holes and hence
high mobility of energy.
45. An n-p-n transistor circuit is arranged as shown in figure.
It is : (1994)

(a) 1.5  (b) 5 

(c) 6.67  (d) 200 
52. A transistor having a  equal to 80 has a change in base
current of 250  amp, then the change in collector current
is : (2007)
(a) a common-base amplifier circuit
(a) (280/80)  amp (b) (250 + 80)  amp
(b) a common-emitter amplifier circuit
(c) (250 – 80)  amp (d) 250 × 80  amp
(c) a common-collector amplifier circuit
53. In an n-p-n transistor circuit, the collector current is 9 mA.
(d) none of the above If 90% of the electrons emitted reach the collector, then
46. The correct relationship between the two current gains  the emitter current is : (2006)
and  in a transistor is : (2006) (a) 10 mA (b) 9 mA
  (c) 8 mA (d) 8.1 mA
(a)   (b)  
   54. A transistor is used in common-emitter mode as an amplifer.
Then : (1998)
  
(c)   (d)   (a) the base-collector junction is forward biased
  
(b) the base-emitter junction is reverse biased
47. The current gain of the common base n-p-n transistor is
0.96. What is the curent gain if it is used as common- (c) the input signal is connected in series with the voltage
emitter amplifier ? (2002) applied to the base-emitter junction
(a) 16 (b) 24 (d) the input signal is connected in series with the voltage
applied to the base-collector junction
(c) 20 (d) 32
55. How many NAND gates are used to form AND gate ?
48. For a transistor, the current amplification factor is 0.8. The
transistor is connected in common-emitter configuration. (a) 1 (b) 2 (1997)
The change in the collector current when the base current (c) 3 (d) 4
changes by 6 mA is : (1991) 56. Which of the following gates will have an output of 1 ?
(a) 6 mA (b) 4.8 mA
(c) 24 mA (d) 8 mA
49. The transfer ratio  of a transistor is 50. The input
resistance of the transistor when used in common- emitter
configuration is 1 k. The peak value of the collector AC
current for an AC input voltage of 0.01 V peak is :(1998)
(a) 100 A (b) 250 A (a) (4) (b) (1) (1998)
(c) 500 A (d) 800 A (c) (2) (d) (3)
SEMI CONDUCTOR 25

57. To get an OR gate from a NAND gate, we need : (1993) 66. In the circuit shown, the current through the ideal diode
(a) only 3 NAND gates is: (2004)
(b) two NOT gates obtained from NAND gates and one
NAND gate
(c) 4 NAND gates and 2 AND gates obtained from NAND gate
(d) 3 NAND gates and 3 NOT gates obtained from NAND gate
58. If a p-n diode is reverse biased, then the resistance
(a) 75 mA (b) 20 mA
measured by an ohm-meter, will be : (2002)
(a) zero (b) low (c) 100 mA (d) 25 mA

(c) high (d) infinite 67. Which is the correct diagram of a half-wave rectifier ?
59. Find the current through 1 resistance : (2006) (2004)

(a) (b)

(c) (d)

(a) 2 Amp (b) 1 Amp 68. Identify the property of which is not the characteristic for
(c) 3 Amp (d) None of these a semiconductor ? (2006)
60. If A = 100101 and B = 110110 are applied to X-NOR gate, (a) At a very low temperature, it behave like an insulator
then the output will be : (2002)
(b) At higher temperature two types of charge carrier will
(a) 101100 (b) 011011 cause conductivity.
(c) 110111 (d) 010011 (c) The charge carriers are electrons and holes in the
61. One serious drawback of semiconductor devices is, that : valence band at higher temperatures.
(a) they are costly (1999) (d) The semiconductor is electrically neutral.
(b) they pollute the environment 69. In the given circuit, the output Y becomes zero for the
(c) they do not last for long time inputs : (2005)
(d) they cannot be used to withstand high voltage.
62. The difference in the variation of resistance with
temperature in a metal and a semiconductor arises
essentially due to the difference in : (2003)
(a) type of bonding (a) A = 1, B = 0, C = 0 (b) A = 0, B = 1, C = 1
(b) crystal structure (c) A = 0, B = 0, C = 0 (d) A = 1, B = 1, C = 0
(c) scattering mechanism with temperature 70. A transistor- oscillator using a resonant circuit with an
(d) number of charge carriers with temperature inductor L (of negligible resistance) and a capacitor C in
series produce oscillations of frequency f. If L is doubled
63. Barrier potential of a p-n junction diode does not depend
upon : (2003) and C is changed to 4 C, the frequency will be : (2006)

(a) temperature (b) forward bias (a) f / 2 (b) f / 4

(c) doping density (d) diode design (c) 8 f (d) f / 2 2
64. The electrical circuit used to get smooth DC output from a 71. A transistor is operated in common emitter configuration
rectifier circuit is called : (2003) at constant collector voltage Vc = 1.5 V, such that a change
(a) oscillator (b) filter in the base current from 100 A to 150 A produces a
(c) amplifier (d) logic gates change in the collector current from 5 mA to 10 mA. The
65. In the case of constant  and  of transistor : (2003) current gain  is : (2006)
(a)  (b)  (a) 50 (b) 67
(c)  (d)  (c) 75 (d) 100
SEMI CONDUCTOR 26

72. The following figure shows a logic gate circuit with two 78. In common emitter amplifier, the current gain is 62. The
inputs A and B and output C. The voltage waveforms of collector resistance and input resistance are 5 k and 500
A, B and C are as shown in second figure given below : respectively. If the input voltage is 0.01 V, the output
voltage. (2007)
(a) 0.62 V (b) 6.2 V
(c) 62 V (d) 620 V
79. The current gain of a transistor in common base mode is
0.995. The current gain of the same transistor in common
emitter mode is : (2007)
(a) 197 (b) 201
The logic circuit gate is : (2006) (c) 198 (d) 199
(a) OR gate (b) AND gate 82. The I-V characteristic of an LED is : (2013)
(c) NAND gate (d) NOR gate
73. Identify the operation performed by the circuit given below:

(a) (b)

(a) NOT (b) AND (2006)

(c) OR (d) NAND (c) (d)
74. In common base mode of a transistor, the collector current
in 5.488 mA, for an emitter current of 5.60 mA. The value of
the base current amplification factor () will be : (2006) 83. The forward biased diode connection is : (2014)
(a) 48 (b) 49 (a) –3V –3V
(c) 50 (d) 51
75. If  and  are the current gain in the CB and CE (b) 2V 4V

configurations respectively of the transistor circuit, then

 .... (2006) (c) –2V +2V

(a)  (b) 1
(d) +2V –2V
(c) 2 (d) 0.5
84. The current voltage relation of diode is given by
76. Output Y is given by : (2006)
I = (e1000V/T–1) mA, where the applied voltage V is in volts
and the temperature T is in degree Kelvin. If a student
makes an error mesuring ± 0.01 V while measuring the
current of 5mA at 300 K, what will be the error in the value
of current in mA ? (2014)
(a) (X + Y) Z (b) (X – Y) Z (a) 0.02 mA (b) 0.5 mA
(c) X . Y  Z (d)  X . Y  . Z (c) 0.05 mA (d) 0.2 mA

77. When the forward bias voltage of a diode is changed from 85. A red LED emits light at 0.1 watt uniformly around it. The
0.6 V to 0.7 V the current changes from 5 mA to 15 mA. amplitude of the electric field of the light at a distance of 1
Then its forward bias resistance is : (2007) m from the diode is : (2015)
(a) 0.01  (b) 0.1  (a) 5.48 V/m (b) 7.75 V/m
(c) 10  (d) 100  (c) 1.73 V/m (d) 2.45 V/m
SEMI CONDUCTOR 27

86. Identify the semiconductor devices whose characteristics 89. In a common emitter amplifier circuit using an n-p-n
are given below, in the order (a), (b), (c), (d) : (2016) transistor, the phase difference between the input and the
output voltages will be : (2017)
(a) 45° (b) 90°
(c) 135° (d) 180°
90. A particle is executing simple harmonic motion with a time
period T. At time t = 0, it is at its position of equilibrium.
The kinetic energy-time graph of the particle will look like:
(2017)

(a) (b)

(a) Zener diode, Simple diode, Light dependent resistance,

(c) (d)
Solar cell
(b) Solar cell, Light dependent resistance, Zener diode,
91. A signal of frequency 20 kHz and peak voltage of 5 Volt is
Simple diode
used to modulate a carrier wave of frequency 1.2 MHz and
(c) Zener diode, Solar cell, Simple diode, Light dependent
peak voltage 25 Volts. Choose the correct statement.
resistance
(2017 Online Set-1)
(d) Simple diode, Zener diode, Solar cell, Light dependent
resistance (a) Modulation index = 5, side frequency bands are at
1400 kHz and 1000 kHz
87. If a, b, c d are inputs to a gate and x is its output, then, as
per the following time graph, the gate is : (2016) (b) Modulation index = 5, side frequency bands are at 21.2
kHz and 18.8 kHz
(c) Modulation index = 0.8, side frequency bands are at
1180 kHz and 1220 kHz
(d) Modulation index = 0.2, side frequency bands are at
1220 kHz and 1180 kHz
92. In amplitude modulation, sinusoidal carrier frequency used
is denoted by c and the signal frequency is denoted by
m. The bandwidth (Dm) of the signal is such that
Dm<<c. Which of the following frequencies is not
contained in the modulated wave ? (2017)
(a) AND (b) OR
(a) c – m (b) m
(c) NAND (d) NOT
(c) c (d) m + c
88. For a common emitter configuration, if  and  have their
93. What is the conductivity of a semiconductor sample
usual meanings, the incorrect relationship between  and
having electron concentration of 5 × 10 18 m–3, hole
 is : (2016)
concentration of 5 × 1019 m–3, electron mobility of 2.0 m2 V–
1 –1
  s and hole mobility of 0.01 m2 V–1 s–1 ?
(a)   (b)  
1 1  (Take charge of electron as 1.6 × 10–19 C) (2017)

2 1 1 (a) 1.68 (W-m)–1 (b) 1.83 (W-m)–1

(c)   (d)   1
1  2   (c) 0.59 (W-m)–1 (d) 1.20 (W-m)–1
SEMI CONDUCTOR 28

94. The reading of the ammeter for a silicon diode in the given (a) 12.5 mA, 7.5 mA, 5 mA (b) 15 mA, 7.5 mA, 7.5 mA
circuit is : (2018) (c) 12.5 mA, 5 mA, 7.5 mA (d) 15 mA, 5 mA, 10 mA
99. A 2V battery is connected across AB as shown is the
figure. The value of the current supplied by the battery
when in one case battery’s positive terminal is connected
to A and in other case when positive terminal of battery is
connected to B will respectively be : (2015 Online)

(a) 11.5 mA (b) 13.5 mA

(c) 0 (d) 15 mA
95. Identify the gate and match A, B, Y in bracket to check.
(2014 Online Set-1)
(a) 0.4 A and 0.2 A (b) 0.2 A and 0.4 A
(c) 0.1 A and 0.2 A (d) 0.2 A and 0.1 A
100. The value of the resistor, Rs, needed in the dc voltage
regulator circuit shown here, equals : (2015 Online)
(a) AND (A = 1, B = 1, Y = 1)
(b) OR (A = 1, B = 1, Y = 0)
(c) NOT (A = 1, B = 1, Y = 1)
(d) XOR (A = 0, B = 0, Y = 0)
96. A transmitting antenna at the top of a tower has a height
32 m and the height of the receiving antenna is 50 m. What
is the maximum distance between them for satisfactory
communication in line of sight (LOS) mode?
 Vi  VL   Vi  VL 
(a) n 1 I (b) n  1 I
(2014 Online Set-1)
 L  L
(a) 55.4 km (b) 45.5 km
 Vi  VL   Vi  VL 
(c) 54.5 km (d) 455 km (c) (d)
nIL nIL
97. An n-p-n transistor has three leads A, B and C. Connecting
101. The truth table given in figure represents :
B and C by moist fingers, A to the positive lead of an
ammeter, and C to the negative lead of the ammeter, one A B Y
finds large deflection. Then, A, B and C refer respectively: 0 0 0
(2014 Online Set-1) 0 1 1
(a) Emitter, base and collector 1 0 1
(b) Base, emitter and collector 1 1 1
(c) Base, collector and emitter (2016 Online Set-1)
(d) Collector, emitter and base. (a) AND – Gate (b) OR – Gate
98. A Zener diode is connected to a battery and a load as (c) NAND – Gate (d) NOR – Gate
shown below: 102. An audio signal consists of two distinct sounds : one a
The currents I, IZ and IL are respectively human speech signal in the frequency band of 200 Hz to
(2014 Online Set-3) 2700 Hz, while the other is a high frequency music signal
in the frequency band of 10200 Hz to 15200 Hz. The ratio
of the AM signal bandwidth required to send both the
signals together to the AM signal bandwidth required to
send just the human speech is : (2016 Online Set-1)
(a) 3 (b) 5
(c) 6 (d) 2
SEMI CONDUCTOR 29

103. An experiment is performed to determine the I–V 107. The V-I characteristic of a diode is shown in the figure.
characteristics of a Zener diode, which has a protective The ratio of forward to reverse bias resistance is :
resistance of R=100 &!, and a maximum power of dissipation (2017 Online Set-1)
rating of 1 W. The minimum voltage range of the DC source
in the circuit is : (2016 Online Set-1)
(a) 0 – 5 V (b) 0 – 8 V
(c) 0 – 12 V (d) 0 – 24 V
104. An unknown transistor needs to be identified as a npn or
pnp type. A multimeter, with +ve and “ve terminals, is used
to measure resistance between different terminals of
transistor. If terminal 2 is the base of the transistor then (a) 10 (b) 10–6
which of the following is correct for a pnp transistor? (c) 106 (d) 100
(2016 Online Set-1) 108. A signal is to be transmitted through a wave of wavelength
(a) +ve terminal 1, “ve terminal 2, resistance high , using a linear antenna. The length 1 of the antenna
(b) +ve terminal 2, “ve terminal 1,resistance high and effectivepower radiated Peff will be given respectively
as : (2017 Online Set-2)
(c) +ve terminal 3, “ve terminal 2, resistance high
(K is a constant of proportionality)
(d) +ve terminal 2, “ve terminal 3, resistance low
2
105. To get an output of 1 from the circuit shown in figure the 1
(a) , Peff  K  
input must be : (2016 Online Set-2) 

 1
(b) , Peff  K  
8 

3
(a) a  0, b  1, c  0  1
(c) , Peff  K  
(b) a = 1, b = 0, c = 0 16 
(c) a = 1, b = 0, c = 1 1

(d) a = 0, b = 0, c = 1   1 2
(d) , Peff  K  
5 
106. A modulated signal Cm(t) has the form Cm (t) = 30sin (300
t) + 10cos (200t) – 10cos (400t). The carrier frequency 109. The current gain of a common emitter amplifier is 69. If the
fc the modulating frequency (message frequency) f and emitter current is 7.0 mA, collector current is :
the modulation index are respectively given by : (2017 Online Set-2)
(2016 Online Set-2) (a) 9.6 mA (b) 6.9 mA
(c) 0.69 mA (d) 69 Ma
1
(a) f c  200 Hz; f   50Hz;   110. In a common emitter configuration with suitable bias, it is
2
given that RL is the load resistance and RBE is small signal
dynamic resistance (input side). Then, voltage gain,
2 current gain and power gain are given, respectively, by :
(b) f c  150 Hz; f  50Hz;  
3
 is current gain, IB, IC and IE are respectively base,
1 collector and emitter currents. (2018 Online Set-1)
(c) f c  150 Hz; f   30Hz;  
3 R L I C 2 R L R L I E 2 R L
(a)  R , I ,  R (b)  R , I ,  R
BE B BE BE B BE
1
(d) f c  200 Hz; f   30Hz;  
2 2 R L I C 2 RL 2 R L I C RL
(c)  R , I ,  R (d)  R , I ,  R
BE E BE BE B BE
 SEMI CONDUCTOR 30

111. The number of amplitude modulated broadcast stations 113. The carrier frequency of a transmitter is provided by a
that can be accomodated in a 300 kHz band width for the tank circuit of a coil of inductance 49 H and a capacitance
highest modulating frequency 15 kHz will be : of 2.5 nF. It is modulated by an audio signal of 12 kHz. The
(2018 Online Set-1) frequency range occupied by the side bands is :
(a) 20 (b) 15 (2018 Online Set-2)
(c) 10 (d) 8 (a) 13482 kHz - 13494 kHz
112. Truth table for the following digital circuit will be : (b) 442 kHz - 466 kHz
(c) 63 kHz - 75 kHz
(d) 18 kHz - 30 kHz
114. In the given circuit, the current through zener diode is :

(2018 Online Set-2)

(a) (b) (2018 Online Set-3)

(a) 5.5 mA (b) 6.7 mA
(c) 2.5 mA (d) 3.3 mA
115. A carrier wave of peak voltage 14 V is used for transmitting
a message signal. The peak voltage of modulating signal
given to achieve a modulation index of 80% will be :
(2018 Online Set-3)
(c) (d)
(a) 7 V (b) 28 V
(c) 11.2 V (d) 22.4 V
SEMI CONDUCTOR 31

EXERCISE - 3 : ADVANCED OBJECTIVE QUESTIONS

1. The nature of binding for a crystal with alternate and evenly 10. To obtain P–type Si semiconductor, we need to dope pure
spaced positive and negative ions is with
(a) Covalent (b) Metallic (a) Aluminium (b) Phosphorous
(c) Dipolar (d) Ionic (c) Oxygen (d) Germanium
2. The temperature coefficient of resistance of a conductor is 11. In an insulator, the forbidden energy gap between the
(a) Positive always (b) Negative always valence band and conduction band is of the order of

(c) Zero (d) Infinite (a) 1 MeV (b) 0.1 MeV

3. Which one of the following is the weakest kind of bonding (c) 1eV (d) 5eV
in solids 12. A N-type semiconductor is
(a) Ionic (b) Metallic (a) Negatively charged (b) Positively charged
(c) Vander Waals (d) Covalent (c) Neutral (d) None of these
4. Atomic radius of fcc is 13. When Ge crystals are doped with phosphorus atom, then
a it becomes
a
(a) (b) (a) Insulator (b) P-type
2 2 2
(c) N-type (d) Superconductor
3 3
(c) a (d) a 14. Let np and ne be the number of holes and conduction
4 2
electrons respectively in a semiconductor. Then
5. Bonding in a germanium crystal (semi- conductor) is
(a) np > ne in an intrinsic semiconductor
(a) Metallic (b) Ionic
(b) np = ne in an extrinsic semiconductor
(c) Vander Waal’s type (d) Covalent
(c) np = ne in an intrinsic semiconductor
6. The majority charge carriers in P-type semiconductor are
(d) ne > np in an intrinsic semiconductor
(a) Electrons (b) Protons
15. Holes are charge carriers in
(c) Holes (d) Neutrons
(a) Intrinsic semiconductors (b) Ionic solids
7. In a semiconductor, the concentration of electrons is
(c) P-type semiconductors (d) Metals
8 × 1014/cm3 and that of the holes is 5 × 1012 cm3. The
semiconductor is 16. In a P-type semiconductor
(a) Current is mainly carried by holes
(a) P–type (b) N–type
(b) Current is mainly carried by electrons
(c) Intrinsic (d) PNP-type
(c) The material is always positively charged
8. In P–type semiconductor, there is
(d) Doping is done by pentavalent material
(a) An excess of one electron (b) Absence of one electron
17. When the temperature of silicon sample is increased from
(c) A missing atom (d) A donar level
27°C to 100°C, the conductivity of silicon will be
9. A piece of copper and the other of germanium are cooled (a) Increased (b) Decreased
from the room temperature to 80 K, then which of the
(c) Remain same (d) Zero
following would be a correct statement
18. Which is the correct relation for forbidden energy gap in
(a) Resistance of each increases
conductor, semi conductor and insulator
(b) Resistance of each decreases
(a) Egc > Egsc > Eginsulator
(c) Resistance of copper increases while that of germanium
(b) Eginsulator > Egsc > Egconductor
decreases
(c) Egconductor > Eginsulator > Egsc
(d) Resistance of copper decreases while that of germanium
increases (d) Egsc > Egconductor > Eginsulator
SEMI CONDUCTOR 32

19. Which impurity is doped in Si to form N-type semi- 25. In a semiconducting material the mobilities of electrons
conductor? and holes are e and h respectively. Which of the following
(a) Al (b) B is true
(c) As (d) None of these (a) e >h (b) e <h
20. A Ge specimen is doped with Al. The concentration of (c) e = h (d) e < 0; h > 0
acceptor atoms is ~1021 atoms/m3. Given that the intrinsic
SEMICONDUCTOR DIODE
concentration of electron hole pairs is ~ 10 19 / m 3 , the
concentration of electrons in the specimen is 26. In a PN-junction diode
(a) 1017/m3 (b) 1015/m3 (a) The current in the reverse biased condition is generally
very small
(c) 104/m3 (d) 102/m3
(b) The current in the reverse biased condition is small but
21. In extrinsic semiconductors
the forward biased current is independent of the bias
(a) The conduction band and valence band overlap voltage
(b) The gap between conduction band and valence band (c) The reverse biased current is strongly dependent on
is more than 16 eV
the applied bias voltage
(c) The gap between conduction band and valence band
(d) The forward biased current is very small in comparison
is near about 1 eV
to reverse biased current
(d) The gap between conduction band and valence band
27. In the circuit given below, the value of the current is
will be 100 eV and more
PN 300 + 1V
22. Which of the following energy band diagram shows the N- + 4V
type semiconductor
(a) 0 amp (b) 10–2 amp
Conduction Conduction
(a) band (CB) (b) (c) 102 amp (d) 10–3 amp
band (CB)
28. In the case of forward biasing of PN-junction, which one
Impurity of the following figures correctly depicts the direction of
Eg 1eV 1eV level flow of carriers
Valance Valance – + N – + N
P –
– + P –
– +
band (VB) band (VB) –
– + –
– +
–
– + –
– +
– + – +
Valance Valance (a) (b)
(c) (d)
band (VB) band (VB)
Vp Vp
1eV Impurity – –
1eV P – + N P – + N
level –
– + –
– +
–
– + –
– +
– + – +
– + – +
Conduction Conduction
band (CB) (c) (d)
band (CB)
Vp Vp
23. Carbon, silicon and Germanium atoms have four valence
electrons each. Their valence and conduction band are 29. Which of the following statements concerning the depletion
separated by energy band gaps represented by (Eg)C. (Eg)Si zone of an unbiased PN junction is (are) true
and (E g)Ge respectively. Which one of the following (a) The width of the zone is independent of the densities of
relationship is true in their case the dopants (impurities)
(a) (Eg)C > (Eg)Si (b) (Eg)C = (Eg)Si (b) The width of the zone is dependent on the densities of
(c) (Eg)C < (Eg)Ge (d) (Eg)C < (Eg)Si the dopants
(c) The electric field in the zone is produced by the ionized
24. A semiconductor dopped with a donor impurity is
dopant atoms
(a) P–type (b) N–type
(d) The electric field in the zone is provided by the electrons
(c) NPN type (d) PNP type
in the conduction band and the holes in the valence band
SEMI CONDUCTOR 33

30. In forward bias, the width of potential barrier in a P-N (a) 1, 2, 3 (b) 2, 4, 5
junction diode
(c) 1, 3, 4 (d) 2, 3, 4
(a) Increases (b) Decreases
35. A silicon speciman is made into a P-type semi-conductor
(c) Remains constant (d) First increases then decreases
by dopping, on an average, one Indium atom per 5 × 107
31. Which of the following statements is not true
silicon atoms. If the number density of atoms in the silicon
(a) The resistance of intrinsic semiconductors decrease specimen is 5 × 1028 atoms /m3 then the number of acceptor
with increase of temperature
atoms in silicon per cubic centimetre will be
(b) Doping pure Si with trivalent impurities give P–type
semiconductors (a) 2.5 × 1030 atoms /cm3 (b) 1.0 × 1013 atoms /cm3

(c) The majority carriers in N–type semiconductors are holes
(d) A PN–junction can act as a semiconductor diode
32. The dominant mechanisms for motion of charge carriers in
forward and reverse biased silicon P-N junctions are
(a) Drift in forward bias, diffusion in reverse bias
(b) Diffusion in forward bias, drift in reverse bias
(c) Diffusion in both forward and reverse bias
(d) Drift in both forward and reverse bias
33. Which one is reverse-biased
10V
–5V
(a) 15V (b)
–10V
(c) 1.0 × 1015 atoms /cm3 (d) 2.5 × 1036 atoms /cm3
36. The probability of electrons to be found in the conduction
band of an intrinsic semiconductor at a finite temperature
(a) Decreases exponentially with increasing band gap
(b) Increases exponentially with increasing band gap
(c) Decreases with increasing temperature
(d) Is independent of the temperature and the band gap
37. A 2V battery is connected across the points A and B as
shown in the figure given below. Assuming that the
resistance of each diode is zero in forward bias and infinity
in reverse bias, the current supplied by the battery when
its positive terminal is connected to A is

–5V
–10V
(c) (d)
10V

34. In the given figure, which of the diodes are forward biased?

+5V A B
+10V
R
(a) 0.2 A (b) 0.4 A
1. 2.
+5V
(c) Zero (d) 0.1 A
38. In the circuit, if the forward voltage drop for the diode is
0.5V, the current will be

–12V 0.5V
–10V
3. 4. R

–5V
8V

5. R (a) 3.4 mA (b) 2 mA

(c) 2.5 mA (d) 3 mA
–10V
SEMI CONDUCTOR 34

39. Current in the circuit will be 43. Find VAB

30V

VAB
i

5V
(a) 10 V (b) 20 V
(c) 30 V (d) None of these
5 5
(a) A (b) A 44. A potential difference of 2V is applied between the opposite
40 50
faces of a Ge crystal plate of area 1 cm2 and thickness 0.5 mm.
5 5 If the concentration of electrons in Ge is 2  1019/m3 and
(c) A (d) A
10 20
m2
40. In semiconductor the concentrations of electrons and holes mobilities of electrons and holes are 0.36 and
volt  sec
are 8  1018/m3 and 5  1018/m3 respectively. If the mobilities
of electrons and hole are 2.3 m2/volt-sec and 0.01 m2/volt- m2
0.14 respectively, then the current flowing
sec respectively, then semiconductor is volt  sec
(a) N-type and its resistivity is 0.34 ohm-metre through the plate will be
(b) P-type and its resistivity is 0.034 ohm-metre (a) 0.25 A (b) 0.45 A
(c) N-type and its resistivity is 0.034 ohm-metre (c) 0.56 A (d) 0.64 A
(d) P-type and its resistivity is 3.40 ohm-metre 45. Different voltages are applied across a P-N junction and
41. In the circuit given below, V(t) is the sinusoidal voltage the currents are measured for each value. Which of the
source, voltage drop VAB(t) across the resistance R is following graphs is obtained between voltage and current
I I
D1 D2

R VAB (a) (b)

–V +V –V +V
~ V(t) I
I

(a) Is half wave rectified (b) Is full wave rectified (c) (d)
(c) Has the same peak value in the positive and negative –V +V
–V +V
half cycles
(d) Has different peak values during positive and negative 46. If the following input signal is sent through a PN-junction
half cycle diode, then the output signal across RL will be
42. The circuit shown in following figure contains two diode
D1 and D2 each with a forward resistance of 50 ohms and 10V
P N
with infinite backward resistance. If the battery voltage is 0V
6 V, the current through the 100 ohm resistance (in amperes) is RL

–10V
D1
20V
(a) (b)
D2 –10V

6V
10V
(a) Zero (b) 0.02 (c) (d)
(c) 0.03 (d) 0.036 –20V
SEMI CONDUCTOR 35

47. The resistance of a germanium junction diode whose V– I (a) 12 (b) 24

is shown in figure is (Vk = 0.3V) (c) 6 (d) 5

I
53. If l1, l2, l3 are the lengths of the emitter, base and collector
10mA of a transistor then
(a) l1 = l2 = l3 (b) l3< l2> l1
(c) l3< l1< l2 (d) l3> l1> l2

V
54. In an NPN transistor circuit, the collector current is 10 mA.
Vk 2.3V
If 90% of the electrons emitted reach the collector, the
(a) 5 k (b) 0.2 k emitter current (iE) and base current (iB) are given by
 10  (a) iE = – 1 mA, iB = 9 mA (b) iE = 9 mA, iB = – 1 mA
(c) 2.3 k (d)   k
 2 .3  (c) iE = 1 mA, iB = 11 mA (d) iE = 11 mA, iB = 1 mA
Assertion and Reason 55. In a common emitter transistor, the current gain is 80. What
(A) If both assertion and reason are true and the reason is the is the change in collector current, when the change in base
correct explanation of the assertion. current is 250 A
(B) If both assertion and reason are true but reason is not the (a) 80  250 A (b) (250 – 80) A
correct explanation of the assertion.
(c) (250 + 80) A (d) 250/80 A
(C) If assertion is true but reason is false.
(D) If the assertion and reason both are false. 56. The transfer ratio of a transistor is 50. The input resistance
of the transistor when used in the common-emitter
(E) If assertion is false but reason is true.
configuration is 1 K. The peak value for an A.C input
48. Assertion : The number of electrons in a P-type silicon
voltage of 0.01 V peak is
semiconductor is less than the number of electrons in a
pure silicon semiconductor at room temperature. (a) 100 A (b) 0.01 mA
Reason : It is due to law of mass action. (c) 0.25 mA (d) 500 A
(a) A (b) B (c) C 57. For a transistor the parameter  = 99. The value of the
(d) D (e) E parameter  is
49. Assertion : If the temperature of a semiconductor is (a) 0.9 (b) 0.99
increased then it’s resistance decreases. (c) 1 (d) 9
Reason : The energy gap between conduction band & 58. A common emitter amplifier is designed with NPN
valence band is very small
transistor ( = 0.99). The input impedance is 1 K and
(a) A (b) B (c) C load is 10 K. The voltage gain will be
(d) D (e) E
(a) 9.9 (b) 99
JUNCTION TRANSISTOR (c) 990 (d) 9900
50. When NPN transistor is used as an amplifier 59. An NPN-transistor circuit is arranged as shown in figure.
(a) Electrons move from base to collector It is
(b) Holes move from emitter to base
(c) Electrons move from collector to base N
RL
P
(d) Holes move from base to emitter N V out
V in
51. If  = 0.98 and current through emitter ie = 20 mA, the value
of  is
(a) 4.9 (b) 49
(c) 96 (d) 9.6 (a) A common base amplifier circuit
52. For a common base configuration of PNP transistor (b) A common emitter amplifier circuit
C
 0.98 then maximum current gain in common emitter (c) A common collector amplifier circuit
E
configuration will be (d) Neither of the above
SEMI CONDUCTOR 36

60. For a transistor, in a common emitter arrangement, the 66. A truth table is given below. Which of the following has
alternating current gain  is given by this type of truth table
A 0 1 0 1
 I   I B 
(a)    C  (b)    
 B 0 0 1 1
 I B  VC  I C  VC
y 1 0 0 0
(a) XOR gate (b) NOR gate
 I   I 
(c)    C  (d)    E 
 (c) AND gate (d) OR gate
 I E  VC  I C  VC
67. For the given combination of gates, if the logic states of
61. In the CB mode of a transistor, when the collector voltage inputs A, B, C are as follows A = B = C = 0 and A = B = 1,
is changed by 0.5 volt. The collector current changes by C = 0 then the logic states of output D are
0.05 mA. The output resistance will be
(a) 10 k (b) 20 k A y

(c) 5 k (d) 2.5 k B G2

G1
D
62. Consider an NPN transistor amplifier in common-emitter C
configuration. The current gain of the transistor is 100. If the
collector current changes by 1 mA, what will be the change (a) 0, 0 (b) 0, 1
in emitter current
(c) 1, 0 (d) 1, 1
(a) 1.1 mA (b) 1.01 mA
68. The logic behind ‘NOR’ gate is that it gives
(c) 0.01 mA (d) 10 mA
(a) High output when both the inputs are low
63. In NPN transistor the collector current is 10 mA. If 90% of
(b) Low output when both the inputs are low
electrons emitted reach the collector, then
(c) High output when both the inputs are high
(a) Emitter current will be 9 mA
(d) None of these
(b) Emitter current will be 11.1 mA
69. A gate has the following truth table
(c) Base current will be 0.1 mA
P 1 1 0 0
(d) Base current will be 0.01 mA
Q 1 0 1 0
64. In the study of transistor as an amplifier, if =Ic/Ie and
=Ic/Ib, where Ic, Ib and Ie are the collector, base and emitter R 1 0 0 0
currents, then The gate is
(a) NOR (b) OR
1  
(a)   (b)   (c) NAND (d) AND
 1 
70. Which of the following gates will have an output of 1
 1 
(c)   (d)  
1   1 0
(a) (b)
0 1
DIGITAL ELECTRONICS
0 0
65. Given below are four logic gate symbol (figure). Those for (c) (d)
1 1
OR, NOR and NAND are respectively
y
71. The given truth table is of
A y A
B B
(1) (2) A X

A y A y 0 1
B B 1 0
(3) (4)
(a) 1, 4, 3 (b) 4, 1, 2 (a) OR gate (b) AND gate
(c) 1, 3, 4 (d) 4, 2, 1 (c) NOT gate (d) None of above
SEMI CONDUCTOR 37

72. This symbol represents 78. The truth-table given below is for which gate
A 0 0 1 1
A
Y B 0 1 0 1
B
C 1 1 1 0

(a) NOT gate (b) OR gate (a) XOR (b) OR

(c) AND gate (d) NOR gate (c) AND (d) NAND

73. The combination of the gates shown in the figure below 79. Which of the following logic gate is an universal gate
produces (a) OR (b) NOT
(c) AND (d) NOR
A 80. In the following common emitter configuration an NPN
A
transistor with current gain  = 100 is used. The output
Y
voltage of the amplifier will be
B
B

Vout
(a) NOR gate (b) OR gate 1mV ~
(c) AND gate (d) XOR gate
74. The output of a NAND gate is 0
(a) 10 mV (b) 0.1 V
(a) If both inputs are 0
(c) 1.0 V (d) 10 V
(b) If one input is 0 and the other input is 1
81. For the transistor circuit shown below, if  = 100, voltage drop
(c) If both inputs are 1 between emitter and base is 0.7 V then value of VCE will be
(d) Either if both inputs are 1 or if one of the inputs is 1 and
the other 0
75. Which logic gate is represented by the following
combination of logic gates C
18V
VCE
B
A E
Y
5V
B
(a) 10 V (b) 5 V
(a) OR (b) NAND (c) 13 V (d) 0 V
(c) AND (d) NOR 82. Figure gives a system of logic gates. From the study of
76. Which gates is represented by this figure truth table it can be found that to produce a high output (1)
at R, we must have
A
y
B X
P
Y R
(a) NAND gate (b) AND gate
(c) NOT gate (d) OR gate
O
77. Sum of the two binary numbers (100010)2 and (11011)2 is
(a) (111101)2 (b) (111111)2 (a) X = 0, Y = 1 (b) X = 1, Y = 1
(c) (101111)2 (d) (111001)2 (c) X = 1, Y = 0 (d) X = 0, Y =
SEMI CONDUCTOR 38

83. The output current versus time curve of a rectifier is shown 86. Assertion : The following circuit represents ‘OR’ gate
in the figure. The average value of the output current in
this case is A
Y
B X
Current

Reason : For the above circuit Y  X  A  B  A  B

Is (a) A (b) B (c) C
Time (d) D (e) E
87. Assertion : When PN–junction is forward biased then
(a) 0 (b) i0/
(c) 2i0/ (d) i0 motion of charge carriers at junction is due to diffusion. In
reverse biasing. The cause of motion of charge is drifting.
Assertion and Reason Reason : In the following circuit emitter is reverse biased
(A) If both assertion and reason are true and the reason is and collector is forward biased.
the correct explanation of the assertion.
+1V
(B) If both assertion and reason are true but reason is not
the correct explanation of the assertion. C
B
(C) If assertion is true but reason is false.
0V
(D) If the assertion and reason both are false. E

(E) If assertion is false but reason is true. –2V

84. Assertion : The dominant mechanism for motion of charge

(a) A (b) B (c) C
carriers in forward and reverse biased silicon P-N junction
(d) D (e) E
are drift in both forward and reverse bias.
88. Assertion : In the following circuit the potential drop across
Reason : In reverse biasing, no current flow through the
the resistance is zero.
junction.
(a) A (b) B (c) C – 2V
(d) D (e) E
85. Assertion : Zener diode works on a principle of breakdown
voltage. – 5V
Reason :Current increases suddenly after breakdown
voltage. Reason :The given resistance has low value.
(a) A (b) B (c) C (a) A (b) B (c) C
(d) D (e) E (d) D (e) E
SEMI CONDUCTOR 39

EXERCISE - 4 : PREVIOUS YEAR JEE ADVANCED QUESTIONS

Fill in the Blanks (a) increases exponentially with increasing band gap
1. For the given circuit shown in figure to act as full wave (b) decreases exponentially with increasing band gap
rectifier, the a.c. input should be connected across ......... (c) decreases with increasing temperature
and ......... the d.c. output would appear across ......... and (d) is independent of the temperature and the band gap
........ (1991)
7. The electrical conductivity of a semiconductor increases
when em radiation of wavelength shorter than 2480 nm is
incident on it. The band gap (in eV) for the semiconductor
is (1997)
(a) 0.9 (b) 0.7
(c) 0.5 (d) 1.1
8. A full-wise rectifier circuit along with the out-put is shown
in figure. The contribution(s) from the diode 1 is (are)
2. In a ............. biased p-n junction, the net flow of holes is (1996)
from the n region to the p region. (1993)
True/False
3. For a diode the variation of its anode current Ia with the
anode voltage Va at two different cathode temperature T1
and T2 is shown in the figure. The temperature T2 is greater
than T1. (1986)

(a) C (b) A,C

(c) B, D (d) A, B, C, D
Objective Questions
3
9. The circuit shown in the figure contains two diodes each
4. The plate resistance of a triode is 3 × 10  and its mutual with a forward resistance of 50 ohms and with infinite
–3
conductance is 1.5 × 10 A/V. The amplification factor of backward resistance. If the battery voltage is 6V, the current
the triode is : (1981) through the 100 ohm resistance (in amperes) is (1997)
–5
(a) 5 × 10 (b) 4.5
5
(c) 45 (d) 2 × 10
5. For a given plate voltage, the plate current in a triode
valve is maximum when the potential of : (1985)
(a) the grid is positive and plate is negative
(b) the grid is zero and plate is positive
(c) the grid is negative and plate is positive
(d) the grid is positive and plate is positive
6. The probability of electrons to be found in the conduction
band of an intrinsic semiconductor at a finite temperature. (a) zero (b) 0.02
(1995) (c) 0.03 (d) 0.036
 SEMI CONDUCTOR 40

10. In a p-n junction diode not connected to any circuit, 13. In an n-p-n transistor circuit, the collector current is 10 mA.
(1998) If 90% of the electrons emitted reach the collector (1992)
(a) the potential is the same everywhere (a) the emitter current will be 9 mA
(b) the p-type side is at a higher potential than the n-type (b) the base current will be 1 mA
side (c) the emitter current will be 11 mA
(c) there is an electric field at the junction directed from (d) the base current will be –1 mA
the n-type side to the p-type side. 14. Holes are charge carriers in (1996)
(d) there is an electric field at the junction directed from (a) intrinsic semiconductors
the p-type side to the n-type side.
(b) ionic solids
Multiple Question Answers
(c) p-type semiconductors
11. Two identical p-n junctions may be connected in series
(d) metals
with a battery in three ways, figure. The potential drops
across the two p-n junctions are equal in (1982) 15. A transistor is used in common emitter mode as an amplifier
then (1998)
(a) the base emitter junction is forward biased
(b) the base emitter junction is reverse biased
(c) the input signal is connected in series with the voltage
aplied to bias the base emitter junction
(d) the input signal is connected in series with the voltage
applied to bias the base collector junction
Subjective Question
16. A triode has plate characteristics in the form of parallel
lines in the region of our interest. At a grid voltage of –1 V
the anode current I (in mA) is given in terms of plate
(a) circuit 1 and circuit 2 (b) circuit 2 and circuit 3
voltage V by the algebraic relation :
(c) circuit 3 and circuit 1 (d) circuit 1 only
I = 0.125 V – 7.5
12. The impurity atoms with which pure silicon should be
For grid voltage of –3 V, the current at anode voltage of
dopedd to make a p-type semiconductor are those of
300 V is 5 mA. Determine the plate resistance (rp)
(a) phosphorus (b) boron (1988) transconductance (gm) and the amplification factor () for
(c) antimony (d) aluminium the triode. (1987)

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SEMI CONDUCTOR 41

ANSWER KEY
EXERCISE - 1 : BASIC OBJECTIVE QUESTIONS
1. (d) 2. (d) 3. (a) 4. (d) 5. (a) 6. (d) 7. (b) 8. (b) 9. (b) 10. (d)
11. (a) 12. (d) 13. (a) 14. (b) 15. (a) 16. (d) 17. (a) 18. (a) 19. (d) 20. (a)
21. (b) 22. (d) 23. (a) 24. (d) 25. (a,b) 26. (a,c) 27. (a) 28. (c) 29. (c) 30. (c)
31. (c) 32. (b) 33. (b) 34. (a) 35. (b) 36. (b) 37. (c) 38. (d) 39. (c) 40. (d)
41. (a) 42. (d) 43. (c) 44. (a) 45. (c) 46. (a) 47. (a) 48. (b) 49. (b) 50. (b)
51. (a) 52. (b) 53. (d) 54. (d) 55. (a) 56. (b) 57. (b) 58. (b) 59. (c) 60. (c)
61. (b) 62. (b) 63. (b) 64. (a) 65. (b) 66. (c) 67. (c) 68. (a) 69. (c) 70. (a)
71. (d) 72. (a) 73. (a) 74. (d) 75. (c) 76. (c) 77. (c) 78. (a) 79. (d) 80. (b)
81. (c) 82. (b) 83. (c) 84. (b) 85. (c) 86. (c) 87. (a) 88. (a) 89. (b) 90. (b)
91. (d) 92. (b) 93. (d) 94. (c) 95. (d) 96. (a) 97. (a) 98. (a) 99. (d) 100. (a)

EXERCISE - 2 : PREVIOUS YEAR JEE MAINS QUESTIONS

1. (c) 2. (c) 3. (d) 4. (d) 5. (d) 6. (a) 7. (d) 8. (c) 9. (a) 10. (a)
11. (a) 12. (d) 13. (d) 14. (a) 15. (b) 16. (d) 17. (a) 18. (d) 19. (a) 20. (a)
21. (b) 22. (c) 23. (b) 24. (c) 25. (a) 26. (a) 27. (a) 28. (d) 29. (a) 30. (c)
31. (a) 32. (a) 33. (c) 34. (b) 35. (d) 36. (a) 37. (a) 38. (a) 39. (a) 40. (a)
41. (d) 42. (c) 43. (a) 44. (d) 45. (b) 46. (c) 47. (b) 48. (c) 49. (c) 50. (b)
51. (b) 52. (d) 53. (a) 54. (c) 55. (b) 56. (a, d) 57. (b) 58. (c) 59. (a) 60. (a)
61. (d) 62. (d) 63. (d) 64. (b) 65. (c) 66. (b) 67. (b) 68. (c) 69. (d) 70. (d)
71. (d) 72. (b) 73. (b) 74. (b) 75. (b) 76. (d) 77. (c) 78. (b) 79. (d) 82. (a)
83. (d) 84. (d) 85 (d) 86. (d) 87. (b) 88. (a,c) 89. (d) 90. (c) 91. (d) 92. (b)
93. (a) 94. (a) 95. (a) 96. (b) 97. (a) 98. (a) 99. (a) 100. (a) 101. (b) 102. (c)
103. (d) 104. (b) 105. (c) 106. (b) 107. (b) 108. (a) 109. (b) 110. (a) 111. (c) 112. (c)
113. (b) 114. (d) 115. (c)

EXERCISE - 3 : ADVANCED OBJECTIVE QUESTIONS

1. (d) 2. (a) 3. (c) 4. (b) 5. (d) 6. (c) 7. (b) 8. (b) 9. (d) 10. (a)
11. (d) 12. (c) 13. (c) 14. (c) 15. (a, c) 16. (a) 17. (a) 18. (b) 19. (c) 20. (a)
21. (c) 22. (b) 23. (a) 24. (b) 25. (a) 26. (a) 27. (b) 28. (c) 29. (b,c) 30. (b)
31. (c) 32. (b) 33. (c) 34. (b) 35. (c) 36. (a) 37. (a) 38. (a) 39. (b) 40. (a)
41. (d) 42. (b) 43. (a) 44. (d) 45. (c) 46. (c) 47. (b) 48. (a) 49. (a) 50. (a)
51. (b) 52. (b) 53. (d) 54. (d) 55. (a) 56. (d) 57. (b) 58. (c) 59. (b) 60. (a)
61. (a) 62. (b) 63. (b) 64. (b) 65. (c) 66. (b) 67. (d) 68. (a) 69. (d) 70. (c)
71. (c) 72. (a) 73. (b) 74. (c) 75. (c) 76. (a) 77. (a) 78. (d) 79. (d) 80. (c)
81. (c) 82. (c) 83. (c) 84. (d) 85. (a) 86. (a) 87. (b) 88. (b)

EXERCISE - 4 : PREVIOUS YEAR JEE ADVANCED QUESTIONS

1. B and D, A and C 2. Reverse 3. True 4. (b) 5. (d) 6. (b) 7. (c) 8. (b) 9. (b)
–3
10. (c) 11. (b) 12. (b, d) 13. (b,c) 14. (a, c) 15. (a, d) 16. 8 k, 12.5 × 10 A/V, 100

Dream on !!
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