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  • 5 - FET Biasing (UNIT-3)

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    Dugasani Ushasree
    3 views4 pages
    1) The document discusses field-effect transistors (FETs), specifically tunneling FETs (TFETs). 2) TFETs have the potential for low-power digital logic applications due to their subthreshold swing being less than the thermal limit of 60 mV/decade. 3) The document provides details on the operation and characteristics of TFETs, such as how they use band-to-band tunneling instead of thermal emission of carriers over a barrier for current flow.

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    5_FET Biasing (UNIT-3)

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    1) The document discusses field-effect transistors (FETs), specifically tunneling FETs (TFETs). 2) TFETs have the potential for low-power digital logic applications due to their subthreshold swing being less than the thermal limit of 60 mV/decade. 3) The document provides details on the operation and characteristics of TFETs, such as how they use band-to-band tunneling instead of thermal emission of carriers over a barrier for current flow.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    3 views4 pages

    5 - FET Biasing (UNIT-3)

    Uploaded by

    Dugasani Ushasree
    1) The document discusses field-effect transistors (FETs), specifically tunneling FETs (TFETs). 2) TFETs have the potential for low-power digital logic applications due to their subthreshold swing being less than the thermal limit of 60 mV/decade. 3) The document provides details on the operation and characteristics of TFETs, such as how they use band-to-band tunneling instead of thermal emission of carriers over a barrier for current flow.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 4

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