Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 2

2.1 2.6
Sketch h 6.625 10 34
_______________________________________ (a) p  
 550 10 9
2.2  1.205 10 27 kg-m/s
Sketch p 1.2045 10 27
_______________________________________    31
 1.32 10 3 m/s
m 9.1110
2.3 or   1.32 10 5 cm/s
Sketch h 6.625 10 34
(b) p  
_______________________________________  440 10 9
 1.506 10 27 kg-m/s
2.4
2 x p 1.5057 10 27
From Problem 2.2, phase   t    31
 1.65 10 3 m/s
 m 9.1110
= constant or   1.65 10 5 cm/s
Then (c) Yes
2 dx dx    _______________________________________
    0,    p   
 dt dt  2  2.7
2 x (a) (i)
From Problem 2.3, phase   t
 
p  2mE  2 9.1110 31 1.2 1.6 10 19  
= constant 25
Then  5.915 10 kg-m/s
2 dx dx    h 6.625 10 34
    0,    p       1.12 10 9 m
 dt dt  2  p 5.915 10  25
o
_______________________________________ or   11.2 A
2.5   
(ii) p  2 9.1110 31 12 1.6 10 19 
hc hc 24
E  h     1.87 10 kg-m/s
 E
6.625 10 34

Gold: E  4.90 eV  4.90 1.6 10 19 J  
1.8704 10  24
 3.54 10 10 m
So, o


 
6.625 10 34 3 1010 
 2.54 10 5 cm
or   3.54 A
 
4.90 1.6 10 19  
(iii) p  2 9.1110 31 120  1.6 10 19  
or  5.915 10 kg-m/s 24
  0.254  m
6.625 10 34

Cesium: E  1.90 eV  1.90 1.6 10 19 J  
5.915 10  24
 1.12 10 10 m
So, o


 
6.625 10 34 3 1010 
 6.54 10 5 cm
or   1.12 A

1.90 1.6 10 19 
or
  0.654  m
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) 2.10

p  2 1.67 10 27
1.21.6 10  19
(a) p
h6.625 10 34

 85 10 10
 2.532 10 23 kg-m/s
 7.794 10 26 kg-m/s
6.625 10 34
  23
 2.62 10 11 m p 7.794 10 26
2.532 10    8.56 10 4 m/s
o m 9.1110 31
or   0.262 A
or   8.56 10 6 cm/s
_______________________________________ 1 1

E  m 2  9.1110 31 8.56 10 4
2 2
 
2

2.8
21
3  3.33 10 J
kT   0.0259  0.03885 eV
3
E avg  3.334 10 21
2 2 or E   2.08 10  2 eV
Now 1.6 10 19
p avg  2mE avg
1

(b) E  9.1110 31 8 10 3
2
2
 
 
 2 9.1110 31 0.03885 1.6 10 19    2.915 10 23 J
or 2.915 10 23
or E   1.82 10  4 eV
p avg  1.064  10 25 kg-m/s 1.6 10 19
Now 
p  m  9.1110 31 8 10 3  
h 6.625 10 34  7.288 10 kg-m/s 27
   6.225 10 9 m
p 1.064 10  25 h 6.625 10 35
or    9.09 10 8 m
o
p 7.288 10  27
  62.25 A o

_______________________________________ or   909 A
_______________________________________
2.9
hc 2.11
E p  h p 
p (a) E  h 
hc

6.625 10 3 10 
34 8

Now  110 10

15
2  1.99  10 J
p2 h 1  h 
E e  e and p e   Ee    Now
2m e 2m   e 
 E 1.99 10 15
Set E p  Ee and  p  10e E  e V  V  
e 1.6 10 19
Then V  1.24 10 V  12.4 kV
4

  
2
1  10h 
2
hc 1  h  (b) p  2mE  2 9.1110 31 1.99 10 15
   
 p 2m   e 
 2m   p  23
 6.02 10 kg-m/s
which yields Then
p 
100h h 6.625 10 34
2mc    1.10 10 11 m
p 6.02 10  23
hc hc 2mc 2 or
Ep  E    2mc 
p 100h 100 o
  0.11 A

2 9.1110 31 3 10 8

 2
_______________________________________
100
15
 1.64  10 J  10.25 keV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2.12 2.15
 1.054 10 34 (a) Et  
p  
x 10  6 1.054 10 34
t   8.23 10 16 s
 1.054 10 28 kg-m/s 
0.8 1.6 10 19 
_______________________________________  1.054 10 34
(b) p  
x 1.5 10 10
2.13
(a) (i) px    7.03 10 25 kg-m/s
_______________________________________
1.054 10 34
p   8.783 10  26 kg-m/s
12 10 10 2.16
dE d  p2  (a) If 1 x, t  and 2 x, t  are solutions to
(ii) E   p     p
dp dp  2m  Schrodinger's wave equation, then
pp
  2  2 1 x, t   x, t 
2p
  p 
2m m   V x 1 x, t   j 1
2m x 2
t
Now p  2mE and
  
 2 9  10 31 16  1.6  10 19    2  2  2  x, t  2 x, t 
  V x 2 x, t   j
24 2m x 2
t
 2.147 10 kg-m/s
  
Adding the two equations, we obtain
2.1466 10 24 8.783 10 26 2 2
so E  1 x, t   2 x, t 
9 10 31 
2m x 2
 V x 1 x, t   2 x, t 
19
 2.095 10 J
2.095 10 19 
or E 
1.6 10 19
 1.31 eV  j 1 x, t   2 x, t 
t
(b) (i) p  8.783 10 26 kg-m/s which is Schrodinger's wave equation. So
1 x, t   2 x, t  is also a solution.
  
(ii) p  2 5 10 28 16 1.6 10 19 
 5.06 10 23 kg-m/s (b) If 1 x, t   2 x, t  were a solution to
E 
 
5.06 10 23 8.783 10 26  Schrodinger's wave equation, then we
5 10  28 could write
 8.888 10 21 J  2 2
 1  2   V x 1  2 
8.888 10 21 2m x 2
or E   5.55 10  2 eV

1.6 10 19  j 1  2 
_______________________________________ t
which can be written as
2.14   2   2 2  2 1   
 1.054 10 34 1  2 2 1  2 
p    1.054 10 32 kg-m/s 2m  x 2
x 2
x x 
x 10  2
 2 1 
p 1.054 10 32  V x 1  2   j 1  2
p  m      t t 
m 1500
Dividing by 1  2 , we find
  7 10 m/s
36

_______________________________________  2  1  2 2 1  2 1 2 1 2 

     
 2 x 1 x 1 2 x x 
2 2
2m
 1 2 1 1 
 V x   j   

 2 t  1 t 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Since 1 is a solution, then 2.19


 2
1  1 2
1 1
 V x   j      dx  1
*
   Note that
2m 1 x 2
1 t 0
Subtracting these last two equations, we have Function has been normalized.
  2  1  2 2 2 1 2  (a) Now
    2
2m  2 x 1 2 x x 
2 ao
4
 2   x 
 j 
1 2

P  
 a o
exp  dx

 a o 
2 t
0
ao
Since 2 is also a solution, we have
4
  2x 
 exp
2
  dx
 2
1  2 2
1 2 ao a o 
   V x   j   0
2m 2 x 2
2 t 2   ao    2 x  ao 4
Subtracting these last two equations, we obtain    exp 

ao  2   ao  0
 2  
 1  2  V x   0
2
 or
2m 1 2 x x    2a o   1
P   1exp   1  1  exp 
This equation is not necessarily valid, which   2 
means that 1 2 is, in general, not a solution   4a o  
to Schrodinger's wave equation. which yields
_______________________________________ P  0.393
(b)
2
2.17 ao
2
 2   x 

3
 x  P  exp  dx
A cos 2  dx  1 
2

 2  ao  a o  a o 
1 4

 x sin x   3
ao

A2   1
2
  2x 
 exp
2
2 2  1   dx
ao ao
a o 
 3   1  4
A      1
2
2   ao    2 x  ao 2
 2  2     exp 

1 ao  2   a o  ao 4
so A 2  or
2
   1 
P   1exp 1  exp 
1
or A 
2   2 
_______________________________________ which yields
P  0.239
2.18 (c)
1 / 2 2
 2   x 
ao

 A 2 cos 2 nx dx  1

1 / 2
P 
 ao
0 

exp  dx

 a o 
 x sin 2nx   1 / 2 ao
A2   1   2x 
 exp
2
2 4n  1 / 2   dx
ao 0
a o 
 1  1  1
A       1  A 2  
2
  ao 
2   2 x  ao
 4  4  2   exp 

 2  ao  ao  0
or A  2
  1exp 2  1
_______________________________________ which yields
P  0.865
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2.20 2.21
P   x  dx

2 a/4
2  2x 
(a) P    a  sin  dx
2

 a 
2 x 
a/4 0
2
(a)    cos 
 
a  2 
dx 

 4x   a / 4
sin  
0
2 x  a 
  2x   a / 4    
 sin    a  2  2  
2 x  4   0
 a 
      a  
 a  2   
 4   0  
 a   
 2  a sin   
 a       
   sin     a   8  8  
2 4  2    
      a 
 a  2  4   or P  0.25
   
  a   a/2
2  2x 
 2  a 1a  (b) P    a  sin  dx
2

     a 
4 
a/4
 a  8
  4x   a / 2
or P  0.409  sin  
 2  x  a 
  
a/2
2  x 
(b) P    a  cos  a dx  a  2  2  
2

 4   a/4
a/4
  a  
  2x   a / 2  
 sin  
 2  x  a   
    2  a sin 2   a  sin   
 a  2         
 4   a / 4  a   4  8   8   8  
 a      
  a   a 
   or P  0.25
 sin   
 2  a sin   a  2  a / 2
 2  2  2x 
     
 a   4  4  8  4  
     
(c) P  
a / 2
  sin 
a  a 
dx
  a   a  
  4x    a / 2
1 1 1   sin  
 2  0    2  x  a 
 4 8 4    
 a  2  2  
or P  0.0908  4   a / 2
a / 2   a  
2 2  x 
(c) P     cos  dx
a  a 




a / 2
 
2
   
a sin 2  

 a  sin  2  

  2x    a / 2  a   4  8   4   8  
 sin       
 2  x  a  
     a   a  
 a  2  4   or P  1
    a / 2
  a   _______________________________________
 
  2.22
 2   a sin     a  sin      8 1012
    
 a   4  4   4   4   (a) (i)  p    10 4 m/s
      k 8 10 8
  a   a   or  p  10 6 cm/s
or P  1
2 2
_______________________________________    7.854  10 9 m
k 8  10 8
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

o
2 2
or   78.54 A k   4.32  10 8 m 1
 1.454  10 8


(ii) p  m  9.1110 31 10 4     k  4.32 10 8 5 10 4 
 9.1110 27 kg-m/s
 2.16 1013 rad/s
1
2
1
E  m 2  9.1110 31 10 4
2
 2
  
(b) p  9.1110 31 10 6  
25
 4.555 10 23 J  9.11 10 kg-m/s
4.555 10 23 6.625 10 34
or E   2.85 10  4 eV   7.27 10 10 m
1.6 10 19 9.1110  25
 1.5 1013 2
(b) (i)  p    10 4 m/s k  8.64  10 9 m 1
k  1.5 10 9 7.272  10 10
or  p  10 6 cm/s   
  8.64 10 9 10 6  8.64 1015 rad/s
_______________________________________
2 2
   4.19 10 9 m
k 1.5 10 9
2.25
or   41.9 A
o
En 
 2 n 2 2


n 2 1.054  10 34  2 
2

(ii) p  9.1110 27 kg-m/s

2ma 2

2 9.11 10 31 75  10 10 
2

E  2.85 10 4 eV 
E n  n 2 1.0698 10 21 J 
_______________________________________ or

n 2 1.0698 10 21
En 

2.23 1.6 10 19
(a) x, t   Ae  j kx t  
or E n  n 2 6.686 10 3 eV 
(b) E  0.025 1.6 10  19
 1
 m 2 Then
2 E1  6.69 10 3 eV
1
2
9.11 10 31  2
   E 2  2.67 10 2 eV
E3  6.02 10 2 eV
so   9.37  10 4 m/s  9.37  10 6 cm/s
_______________________________________
For electron traveling in  x direction,
  9.37 10 6 cm/s 2.26

p  m  9.1110 31  9.37 10 4    2 n 2 2 
n 2 1.054  10 34  2 
2

(a) E n  
 8.537 10 26 kg-m/s 2ma 2 
2 9.11 10 31 10  10 10 
2


h 6.625  10 34
  7.76  10 9 m  
 n 2 6.018 10 20 J
n 6.018 10 
p 8.537  10  26 2 20

2 2 or En   n 0.3761 eV 2

k   8.097  10 8 m 1 1.6 10 19

 7.76  10 9 Then
  k    8.097 10 8 9.37  10 4  E1  0.376 eV
or   7.586 10 rad/s 13 E 2  1.504 eV
_______________________________________ E 3  3.385 eV
hc
2.24 (b)  
E
(a) 
p  m  9.1110 31 5 10 4   E  3.385  1.504 1.6 10 19  
26
 4.555 10 kg-m/s 19
 3.0110 J
h 6.625 10 34
   1.454 10 8 m
p 4.555 10  26
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________


6.625 10 3 10 34 8 so in this region
 2 x  2mE
 2  x   0
19
3.0110
 6.604 10 7 m x 2 
or   660.4 nm The solution is of the form
_______________________________________  x   A cos kx  B sin kx
where
2.27 2mE
 2 n 2 2 k
(a) E n  2
2ma 2 Boundary conditions:

15  10 3 

n 2 1.054  10 34  2 
2
 x   0 at x 
a
, x
a

2 15  10 3 1.2  10  2  2 2 2

 
First mode solution:
15 10 3  n 2 2.538 10 62  1 x   A1 cos k1 x
or n  7.688 10 29
where
(b) E n 1  15 mJ   2 2
k1   E1 
(c) No a 2ma 2
_______________________________________ Second mode solution:
 2 x   B2 sin k 2 x
2.28 where
For a neutron and n  1 :
2 4 2  2
E1 
 2 2


1.054  10 34  2 
2
k2 
a
 E2 
2ma 2
2ma 2

2 1.66  10  27 10 14  
2
Third mode solution:
 3.3025 10 13 J  3 x   A3 cos k 3 x
or where
3.3025 10 13 3 9 2  2
E1   2.06 10 6 eV k3   E3 
1.6 10 19 a 2ma 2
For an electron in the same potential well: Fourth mode solution:
1.054 10   34 2 2  4 x   B4 sin k 4 x
E1 
29.11 10 10 
 31 14 2
where
4 16 2  2
 6.0177 10 10 J k4   E4 
a 2ma 2
or _______________________________________
6.0177 10 10
E1   3.76 10 9 eV
1.6 10 19 2.30
_______________________________________ The 3-D time-independent wave equation in
cartesian coordinates for V x, y, z   0 is:
2.29  2 x, y, z   2 x, y, z   2 x, y, z 
Schrodinger's time-independent wave  
equation x 2 y 2 z 2
 2 x  2m  2   x, y , z   0
2mE
 2 E  V x  x   0 
x 2 
We know that Use separation of variables, so let
a  x, y, z   X x Y  y Z z 
 x   0 for x  and x 
a
2 2 Substituting into the wave equation, we
We have obtain
a a
V x   0 for x
2 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2 X  2Y 2Z  x, y 
YZ  XZ  XY  Ak y sin k x x  cos k y y
x 2 y 2 z 2 y
2mE  2 x, y 
 2 XYZ  0   Ak y2 sin k x x  sin k y y
 y 2

2mE Substituting into the original equation, we

Dividing by XYZ and letting k 2  2 , we
 find:
find 2mE
(1)  k x2  k y2  2  0
1  2 X 1  2Y 1  2 Z 
(1)      k2 0 From the boundary conditions,
X x 2 Y y 2 Z z 2
o
We may set A sin k x a  0 , where a  40 A
1 2 X 2 X n 
 2  k x2   k x2 X  0 So k x  x , n x  1, 2, 3, ...
X x x 2 a
Solution is of the form o
X x   A sin k x x   B cosk x x  Also A sin k y b  0 , where b  20 A
Boundary conditions: X 0  0  B  0 n y
So k y  , n y  1, 2, 3, ...
n  b
and X x  a   0  k x  x Substituting into Eq. (1) above
a
where n x  1, 2, 3....  2  n x  n 2y  2 
2 2
E nx n y   
Similarly, let 2m  a 2 b 2 
1  2Y 1 2Z
 2  k y2 and   k z2 (b)Energy is quantized - similar to 1-D result.
Y y Z z 2 There can be more than one quantum state
Applying the boundary conditions, we find per given energy - different than 1-D result.
n y _______________________________________
ky  , n y  1, 2, 3....
a 2.32
n (a) Derivation of energy levels exactly the
k z  z , n z  1, 2, 3...
a same as in the text
 2 2 2
From Equation (1) above, we have
 k x2  k y2  k z2  k 2  0
(b) E  
n 2  n12 
2ma 2
or For n 2  2, n1  1
2mE Then
k x2  k y2  k z2  k 2 
2 3 2  2
E 
so that 2ma 2
 2 2 2
 
o
E  E nx n y nz n x  n 2y  n z2 (i) For a  4 A
2ma 2
_______________________________________ E 
 
2
3 1.054  10 34  2
 
2 1.67  10  27 4  10 10 
2

2.31
 6.155 10 22 J
 2 x, y   2 x, y  2mE
(a)   2  x, y   0 6.155 10 22
x 2 y 2  or E   3.85 10 3 eV
1.6 10 19
Solution is of the form:
 x, y   A sin k x x  sin k y y
We find
 x, y 
 Ak x cos k x x  sin k y y
x
 2 x, y 
  Ak x2 sin k x x  sin k y y
x 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(ii) For a  0.5 cm Combining these two equations, we find

E 

3 1.054  10  34

2 2  k  k1 
A2   2   B2

2 1.67  10  27
0.5  10  2 2  k 2  k1 
 3.939 10 36 J  2k 2 
B1     B2
or  k 2  k1 
3.939 10 36 The reflection coefficient is
E   2.46 10 17 eV
1.6 10 19
2
A2 A2* k  k1 
R   2 
_______________________________________ B 2 B 2  k 2  k 1 
*

2.33 The transmission coefficient is

(a) For region II, x  0 T  1 R  T 
4k 1 k 2
 2 2 x  2m k1  k 2 2
 2 E  VO  2 x   0
x 2  _______________________________________
General form of the solution is
 2 x   A2 exp jk 2 x   B2 exp jk 2 x  2.34
 2 x   A2 exp k 2 x 
where
 x 
2

E  VO   exp 2k 2 x 
2m
k2  P
2 A2 A2*
Term with B 2 represents incident wave and 2mVo  E 
term with A2 represents reflected wave. where k 2 
2
Region I, x  0
 2 1 x  2mE 
 
2 9.1110 31 3.5  2.8 1.6 10 19  
 2  1 x   0 1.054 10 34
x 2 
General form of the solution is k 2  4.286 10 9 m 1
 1 x   A1 exp jk1 x   B1 exp jk1 x  o
(a) For x  5 A  5 10 10 m
P  exp 2k 2 x 
where

k1 
2mE
2
 
 exp  2 4.2859 10 9 5 10 10  
 0.0138
Term involving B1 represents the o
transmitted wave and the term involving A1 (b) For x  15 A  15 10 10 m
represents reflected wave: but if a particle is  
P  exp  2 4.2859 10 9 15 10 10  
transmitted into region I, it will not be 6
 2.6110
reflected so that A1  0 . o
Then (c) For x  40 A  40 10 10 m
 1 x   B1 exp jk1 x   
P  exp  2 4.2859 10 9 40 10 10  
 2 x   A2 exp jk 2 x   B2 exp jk 2 x  15
 1.29  10
(b) _______________________________________
Boundary conditions:
(1)  1 x  0   2 x  0 2.35
 1  2 E  
 exp 2k 2 a 
 E
(2) T  16 1 
 V 
x x 0 x x 0
 Vo  o 
Applying the boundary conditions to the
solutions, we find 2mVo  E 
where k 2 
B1  A2  B 2 2
k 2 A2  k 2 B2  k1 B1

 
2 9.1110 31 1.0  0.1 1.6 10 19  
34
1.054 10
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

or k 2  4.860  10 9 m 1 k2 =

   
1/ 2
 21.08 9.1110 0.8  0.2 1.6 10
10
(a) For a  4 10 m   31 19


T  16
 0.1  0.1 
1   
 exp  2 4.85976 10 4 10
9 10
  
 
1.054 10 34
2
 

 1.0  1.0  or
 0.0295 k 2  4.124 10 9 m 1
(b) For a  12 10 10 m Then
T  16
 0.1  0.1 
1   
 exp  2 4.85976 10 12 10
9 10
  T  16
 0.2  0.2 
1  
 1.0  1.0   0.8  0.8 
 1.24 10 5  
 exp  2 4.124 10 9 15 10 10  
(c) J  N t e , where N t is the density of or
transmitted electrons. T  1.27 10 5
E  0.1 eV  1.6 10 20 J _______________________________________
1 1
 m 2  9.1110 31  2
2 2
  2.37
   1.874 10 m/s 1.874 10 7 cm/s
 E  
 exp 2k 2 a 
5 E
T  16 1 
1.2 10 3

 N t 1.6 10 19
1.874 10 
7
 Vo
 V
 o


N t  4.002 10 electrons/cm 3
8
2mVo  E 
where k 2 
Density of incident electrons, 2
Ni 
4.002 10 8
 1.357 1010 cm 3

 
2 1.67 10 27 12  110 6  1.6 10 19  
0.0295 34
1.054 10
_______________________________________
 7.274 1014 m 1
2.36 (a)
 E 
T  16 1 
 V
E 
 exp 2k 2 a 

 1  1
T  16 1   exp  2 7.274 1014 10 14    
 O 
V   12  12 
 1.222 exp 14.548
O

(a) For m  0.067 mo

 5.875 10 7
2mVO  E 
k2  (b)
2

T  10 5.875 10 7 
      
1/ 2
 20.067  9.1110 0.8  0.2 1.6 10
 
 31 19
  1.222 exp  2 7.274 1014 a
 
 
1.054 10 34
2
 
 
  1.222
2 7.274 1014 a  ln  6


 5.875  10 
or
or a  0.842 10 14 m
k 2  1.027 10 9 m 1
_______________________________________
Then
 0.2  0.2  2.38
T  16 1  
 0.8  0.8  Region I x  0 , V  0 ;
 
 exp  2 1.027 10 9 15 10 10   Region II 0  x  a  , V  VO
or Region III x  a  , V  0
T  0.138 (a) Region I:
(b) For m  1.08m o  1 x   A1 exp jk1 x   B1 exp jk1 x 
(incident) (reflected)
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

k 
where A3 A3*
A1 A1*  2
 k12 expk 2 a 
k1 
2mE 4k1 k 2 2 2

2
 exp k 2 a 
2


Region II:
 2 x   A2 expk 2 x   B2 exp k 2 x   4k12 k 22 expk 2 a   exp k 2 a 
2

where We have
2mVO  E  2mVO  E 
k2  k2 
 2 2
Region III: If we assume that VO  E , then k 2 a will
 3 x   A3 exp jk1 x   B3 exp jk1 x  be large so that
(b) expk 2 a   exp k 2 a 
In Region III, the B3 term represents a We can then write
reflected wave. However, once a particle
A1 A1* 
A3 A3*

k 2  k 2 expk 2 a 
2

is transmitted into Region III, there will
not be a reflected wave so that B3  0 .
4k1 k 2 2 2 1
(c) Boundary conditions:  4k12 k 22 expk 2 a 
2

At x  0 :  1   2  which becomes
A1  B1  A2  B2 A1 A1* 
A3 A3*

k 22  k12 exp2k 2 a  
d  1 d 2 4k1 k 2  2

 
dx dx Substituting the expressions for k1 and
jk1 A1  jk1 B1  k 2 A2  k 2 B2 k 2 , we find
At x  a :  2   3  2mV O
k 12  k 22 
A2 expk 2 a   B2 exp k 2 a  2
 A3 exp jk1 a  and
d 2 d 3  2mVO  E   2mE 
  k12 k 22    2 
dx dx  2   
k 2 A2 expk 2 a   k 2 B2 exp k 2 a   2m 
2

  2  VO  E E 
 jk1 A3 exp jk1 a   
The transmission coefficient is defined as 2
 
 2m 
  2  VO 1  E 
E
A A*
  
T  3 3*   V O 
A1 A1 Then
so from the boundary conditions, we want 2
 2mV O 
A3 A   exp2k 2 a 
*
to solve for A3 in terms of A1 . Solving 3
  
2
for A1 in terms of A3 , we find A1 A1* 
 2m  2  E  
A1 
 jA3
 
k 22  k12 expk 2 a   exp k 2 a  16  2  VO 1  E 

4k 1 k 2     VO  
 2 jk1 k 2 expk 2 a   exp k 2 a   A3 A3*

 exp jk1 a   E  
 exp 2k 2 a 
E
16 1 
 V 
We then find
 VO  O 
Finally,
A A*  E  E 
T  3 3*  16 1   exp 2k 2 a 
 
A1 A1  VO  VO 
_____________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2.39  2  3
Region I: V  0  
x x
 2 1 x  2mE k 2 A2 exp jk 2 a   k 2 B2 exp jk 2 a 
 2  1 x   0 
x 2   k 3 A3 exp jk 3 a 
 1 x   A1 exp jk1 x   B1 exp jk1 x  But k 2 a  2n 
exp jk 2 a   exp jk 2 a   1
incident reflected
where
Then, eliminating B1 , A2 , B 2 from the
2mE
k1  boundary condition equations, we find
2
k 4k12 4k 1 k 3
Region II: V  V1 T 3 
k1 k1  k 3 2 k1  k 3 2
 2 2 x  2mE  V1 
  2 x   0  _______________________________________
x 2
2
 2 x   A2 exp jk 2 x   B2 exp jk 2 x  2.40
transmitted reflected (a) Region I: Since VO  E , we can write
 2 1 x  2mVO  E 
where
2mE  V1    1 x   0
k2  x 2
2
2
 Region II: V  0 , so
Region III: V  V2  2 2 x  2mE
 2  2 x   0
 2 3 x  2 m E  V 2  x 2 
  3 x   0 
x 2
2 Region III: V     3  0
 3 x   A3 exp jk 3 x  The general solutions can be written,
transmitted keeping in mind that  1 must remain
where finite for x  0 , as
2 m E  V 2   1 x   B1 expk1 x 
k3 
2  2 x   A2 sin k 2 x   B2 cosk 2 x 
There is no reflected wave in Region III.  3 x   0
The transmission coefficient is defined as: where
2mVO  E  2mE
 3 A3 A3* k 3 A3 A3* k1  and k 2 
T     2
2
1 A1 A1* k1 A1 A1*
(b) Boundary conditions
From the boundary conditions, solve for A3 At x  0 :  1   2  B1  B2
in terms of A1 . The boundary conditions are:  1  2
  k 1 B1  k 2 A2
At x  0 :  1   2  x x
A1  B1  A2  B2 At x  a :  2   3 
 1  2 A2 sin k 2 a   B2 cosk 2 a   0
 
x x or
k1 A1  k1 B1  k 2 A2  k 2 B2 B2   A2 tan k 2 a 
At x  a :  2   3  (c)
A2 exp jk 2 a   B2 exp jk 2 a  k 
k1 B1  k 2 A2  A2   1  B1
 A3 exp jk 3 a   k2 
and since B1  B2 , then
k 
A2   1  B2
 k2 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

From B2   A2 tan k 2 a  , we can write 4   2r 

P  r 2 exp 

k 
B2   1  B2 tank 2 a 
a o  3
 ao 
 k2  To find the maximum probability
or dP r 
0
k  dr
1   1  tan k 2 a 
4   2  2   2r 
 k2   
3 
 r exp
  a   

This equation can be written as a o   o 
a  o 
V E  2mE    2r 
1  O  tan   a  2r exp 
E  
2
 
 a o 
or which gives
E  2mE  r
  tan   a 0  1  r  ao
VO  E  
2
 ao
This last equation is valid only for specific or r  a o is the radius that gives the greatest
values of the total energy E . The energy probability.
levels are quantized. _______________________________________
_______________________________________
2.43
2.41  100 is independent of  and  , so the wave
 mo e 4 equation in spherical coordinates reduces to
En  (J)
4 o 2 2 2 n 2 1   2   2mo
 r E  V r   0

 mo e 3 r 2 r  r   2
 (eV)
4 o 2 2 2 n 2 where
 e2  2

 
 9.11 10 31 1.6  10 19  3
V r   
4 o r mo a o r
4 8.85 10 12
 21.054 10  n
2  34 2 2
For
or 3/ 2
1  1  r 
13.58  100    
 exp 

En  (eV)   ao   ao 
n2
n  1  E1  13.58 eV Then
3/ 2
n  2  E 2  3.395 eV  100 1  1   1  r 
   

  exp
a  a 

n  3  E 3  1.51 eV r   ao   o  o 
n  4  E 4  0.849 eV so
5/2
_______________________________________  100 1  1  r 
r 2
   r 2 exp 
r   a o 


 ao 
2.42
We then obtain
We have 5/2
 1 
3/ 2
r    2  100   1  1 
1 r    
 100    
 exp 
 r  r    ao


  ao   ao 
and   r   r2    r 
 2r exp     exp
    a 

P  4 r 2 100 100
*
  ao   ao   o 
3
1  1    2r  Substituting into the wave equation, we have
 4 r   
2
 exp
  a 

  ao   o 
or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

   r 
5/ 2
1  1   r  r2
  
2r exp 
 exp 

r2   ao   ao  ao  a o 
2m  2 
 2o  E  
  mo a o r 
3/ 2
 1   1  r 
  
 

 exp 0

    ao   ao 
where
 mo e 4
 2
E  E1  
4 o 2 2 2 2mo ao2
Then the above equation becomes
   r  
3/ 2
 1  1  r2 
 
1
  
exp
 
 r 2a  2 r  
  ao   a o  
  o 
ao 
2m    2  2 
 2o     0
  2m o a o m o a o r 
or
   r 
3/ 2
1  1 
  
 exp 

  ao    a o 
  2 1   1 2 
  2   2  0
 a o r a o  a o a o r 
which gives 0 = 0 and shows that  100 is
indeed a solution to the wave equation.
_______________________________________

2.44
All elements are from the Group I column of
the periodic table. All have one valence
electron in the outer shell.
_______________________________________