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principles in nanotechnology
Paola Vega-Castillo
Instituto Tecnológico de Costa Rica
*Corresponding author:
Instituto Tecnológico de Costa Rica, Cartago, CR30101, pvega@itcr.ac.cr
The change in the I-V characteristics of the transistor can be The dielectric can also be coated with carbon nanotubes to
caused by: form an electrode; the CNTs are contacted with metal
electrodes. A degenerate substrate serves as the second
1) carrier transfer from the analyte to the nanotubes, acting electrode. The degenerated substrate is oxidized to create a
as nanowire doping [2, 3] and therefore increasing or 250nm SiO2; CNTs are deposited by chemical vapor
decreasing the current due to modification of the threshold deposition and contacted by Pt electrodes [9]. A general
voltage. The surface potential of the nanotube is modified by schematic draw of this sensor is illustrated in figure 2. Here,
the analyte, causing causing accumulation or depletion [4, 5] adsorbate polarization is achieved by the fringing electric
fields at the CNT surface. This additional polarization
2) change in the capacitance of the nanowire [1] by increases the capacitance. These sensors are capable of
attraction or repulsion of charge by the analyte, causing a detecting even a monomolecular layer.
similar effect as a change in permittivity
Contacts to CNTs
3) modification of the energy levels at the contact due to
adsorption of the analyte at the nanowire contacts [2]
3. MEMS/NEMS sensors
6. References