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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 3
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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 5
where I2 p and I2d are the current flows through the sub-coils
L 2 p and L 2d , respectively, given by
ωM12 p I1
I 2 p = 2 2 (5)
r L2 p + R L + ωL 2 p
ωM12d I1
I2d (6)
(r L2d + RC W M )2 + (ωL 2d )2
where M12 p and M12d are the mutual inductances between the
primary coil and the sub-coils L 2 p and L 2d , respectively.
By substituting (5) and (6) into (4), neglecting r L2 p and
ω2 M 2
= k12 p 2 Q 1 Q 2 p and ωr L1Mr12d
2 2
r L2d , and since r L1 r12 p
L2 p L2d
=
2
k12d Q 1 Q 2d , the efficiency can be expressed as:
r L2 p R L
PT E = 1 +
k12 p 2 Q 1
2
2 r R R 2 + ωL −1
k12d Q 2d L2d C W M L 2 p
+ (7)
k12 p 2 Q 2 p r L2 p R L RC W M 2 + (ωL 2d )2
During CWM data communication, the efficiency of the
CWM modulated system will be equal to the efficiency of
the system being activated, i.e., when the modulated signal
is high. If the transient process is neglected and considering
that ‘1’ and ‘0’ bits will be equiprobable, the power transfer
efficiency PT E C W M can be expressed as:
3
PT E C W M = pi × PT E = 0.5(2 − ) × PT E (8)
n
Simulation analysis of PT E C W M according to the varia-
tions in k, Q 1 , Q 2 p and R L are shown in Fig. 8(a), 8(b),8(c),
and 8(d), respectively, for different values of n (3, 6 and 100)
and for k= k12 p = k12d and Q 2d = 502. Since the powering index
Fig. 8. Simulated P T E as a function of (a) k, (b) Q 1 ,(c) Q 2 and (d) R L ,
pi increases with n, it makes sense that a higher n increases for different n.
PT E C W M , as shown in all the reported results.
Figure 8(a) shows that PT E C W M increases almost linearly
with a high slope according to the coupling factor k. The Fig. 8(b) and Fig. 8(c). However, it is noticeable that the slope
primary and secondary quality factors of coils Q 1 and Q 2 p is larger at quality factors below 100. Hence, quality factors
also contribute to the increase of PT E C W M , as shown in greater than 100 are recommended for higher PT E C W M .
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Fig. 9. Block diagram of the implemented system for power and data transfer.
Figure 8(d) shows that PT E C W M depends as well on R L output capacitance of the transistor is mainly used as an
and a maximum PT E C W M occurs at an optimal load condi- alternative current pathway when the switch is off in order to
tion. For a complete power recovery system, the PT E C W M reduce power dissipation in the transistor. The L 1 -C1 resonant
curve may change due to the non-linear behaviour of the circuit is tuned to the first harmonic of the carrier frequency
rectifier and the DC regulator. and acts as a filter that allows only a clean sinusoidal current
Even though our preferred solution is to use a non-resonant to pass across it.
secondary, in order to characterise the impact of that design When S2 is off, it acts as an open circuit that allows I R F C
decision, we also simulated the case where the secondary to charge up Cshunt and increase V D S . The rising voltage will
would be resonant. The result of that possible design choice excite the series resonant LC tank circuit causing AC current
is also reported in Fig.8(d). For this case, only R L values to flow in L 1 at the operating frequency. Due to this resonant
that can ensure both power transfer and data communication circuit, V D S eventually drops before the transistor is switched
have been considered (i.e. for low R L ). In this condition, on again. When S2 is On, the transistor channel has a low-
the proposed non-resonant secondary circuit shows 33% less resistance and any charge stored on Cshunt will be discharged
power efficiency in the worst case. On the other hand, our to the ground, so the voltage V D S is pulled near zero and a
non-resonant circuit is much more robust to load variations large current flows through S2 .
while ensuring simultaneous power and data transfer. In theory, if the transition times between the On and
Off states and the Drain-Source On-resistance RDS(on) are
III. S YSTEM I MPLEMENTATION neglible, the efficiency of a class E PA is 100%. However,
Figure 9 illustrates a simplified schematic of the proposed in practice, these parameters are not negligible and the ampli-
wireless power and data transfer system consisting of a fier’s efficiency depends on the ability of the transistor to hold
transmitter (TX) and a receiver (RX). The transmitter can zero charge across its terminals while it is switching, and to
be divided into four main parts: the traditional inductive perform On/Off switching transitions as fast as feasible. The
power transmission circuit based on a class E PA, the CWM time required to switch On a MOSFET depends on the time
modulation circuit, the current zero-crossing detector, and the it takes to inject the Gate-to-Source charge Q gs and the Gate-
signal processing unit. On the other side, the receiver includes to-Drain charge Q gd into the gate.
power and data recovery circuits. All these system blocks will Due to its ultra-low Q gs and Q gd parameters,
be discussed in the following subsections. Also, the challenges the EPC2038 transistor, from Efficient Power Conversion
faced during experimentation and the proposed solutions will Corporation’s (EPC), was selected to build the prototype
be presented. reported later. It is a Gallium nitride (GaN) power
transistor that behaves similarly to a silicon (Si) transistor,
but it has superior performance. Indeed, compared to
A. Class E Power Amplifier conventional Si technologies, GaN transistors are much
The class E PA consists of a transistor S2 , an RF choke faster while having lower on-resistance, higher Drain-Source
R FC, a shunt capacitor Cshunt and an LC series tank matching breakdown voltage, less parasitic capacitance and zero
network formed by a primary coil L 1 and a series capacitor C1 . reverse recovery charge. Thus, they yield less conductance
The transistor S2 acts as a switch (i.e. operating between triode losses, switching losses and gate drive losses. Since
and cut off regions) and it is turned On and Off periodically their first introduction in 2010, GaN devices attracted
at the carrier frequency f c . Cshunt that includes the intrinsic attention in scientific communities over the past 10 years
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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 7
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Fig. 11. Circuit diagram for the current zero-crossing detection and CWM synchronized data generation.
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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 9
TABLE I
PARAMETERS OF THE I NDUCTIVE L INK
Fig. 13. (a) Block diagram of the proposed CWM demodulator, and (b) chip
micrograph.
Fig. 15. Measured waveforms for CWM data modulation in the transmitter
with n=6.
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TABLE II
P ERFORMANCE C OMPARISON OF I NDUCTIVE P OWER AND D OWNLINK D ATA T RANSFER S YSTEMS
Fig. 16. Measured waveforms for data transmission and reception for
(a) n=6 with a repeating “010011” bit sequence, (b) n=3 with repeating “01” is found very close to the edge of the region beyond which
pattern sequence. The output digital bit-streams are delayed by t + Td [18]. communication stops working.
Figure 17(b) shows the maximal achievable recovered
of 3.33 Mb/s. These screenshot captures validate that the data power PD L max as a function of data rates at da = 1 cm.
transmission is robust for recurring pattern in the bit stream As expected, PD L max increases with n. However, the best
as well as for high data rates. tradeoff is represented by a Figure of Merit value (FoM)
Figure 17(a) illustrates the effect of the load (R L ) variation defined as FoM = Data rates×PD L max . The best FoM (49.23)
on recovered power PD L at axial distance da between primary is reached at 1.66 Mb/s (n = 6).
and secondary coil of 1 cm for different data rates with PD L = Figure 18 shows the effect of axial distance da variation on
Vrec × Irec where Vrec and Irec are the output voltage and recovered power PD L for different data rates with R L = 1 k.
current of the rectifier, respectively. We notice that for each We can notice that PD L decreases as coil separation grows.
carrier cycle per bit n (data rate), there is an optimum load This PD L reduction is due to the reduction in mutual induc-
that maximizes the power delivery. Note that this optimum tance which is inversely proportional to da . Also, as expected,
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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 11
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[25] H. Sayed, A. Zurfi, and J. Zhang, “Effects of PCB power layouts design Sami Hached received the B.S and M.Sc.A. degrees
on switching transient performance of SiC MOSFETs,” Anal. Integr. in automation and industrial computing from the
Circuits Signal Process., vol. 99, no. 1, pp. 81–93, Apr. 2019. National Institute of Applied Sciences and Tech-
[26] H. C. P. Dymond and B. H. Stark, “Investigation of a parasitic- nology, Tunis, Tunisia, and the Ph.D. degree in
inductance reduction technique for through-hole packaged power electrical engineering from Polytechnique Montréal,
devices,” in Proc. IEEE Energy Convers. Congr. Expo. (ECCE), Montreal, QC, Canada.
Sep. 2018, pp. 1964–1968. His research interests include medical implants
[27] A. Trigui, S. Hached, F. Mounaim, A. C. Ammari, and M. Sawan, and aerospace systems and technologies. He received
“Inductive power transfer system with self-calibrated primary res- many prizes and distinctions for his research on
onant frequency,” IEEE Trans. Power Electron., vol. 30, no. 11, artificial sphincters.
pp. 6078–6087, Nov. 2015.
[28] A. Trigui, S. Mehri, A. C. Ammari, J. B. H. Slama, and M. Sawan,
“Prosthetic power supplies,” in Wiley Encyclopedia of Electrical and
Electronics Engineering. New York, NY, USA: Wiley, 2015.
[29] T. Liu, R. Ning, T. T. Y. Wong, and Z. John Shen, “Modeling and
analysis of SiC MOSFET switching oscillations,” IEEE J. Emerg. Sel.
Topics Power Electron., vol. 4, no. 3, pp. 747–756, Sep. 2016.
[30] Z. Zeng and X. Li, “Comparative study on multiple degrees of freedom
of gate drivers for transient behavior regulation of SiC MOSFET,” IEEE
Trans. Power Electron., vol. 33, no. 10, pp. 8754–8763, Oct. 2018.
[31] R. Severns and E. Reduce, Design of Snubbers for Power Circuits. El
Segundo, CA, USA: International Rectifier Corporation, 2006.
[32] Y. Lee, “RFID coil design,” Microchip Technol. Inc., Chandler, AZ,
USA, Appl. Note AN678, 1998.
[33] N. Desai, C. Juvekar, S. Chandak, and A. P. Chandrakasan, “An actively
detuned wireless power receiver with public key cryptographic authen-
tication and dynamic power allocation,” IEEE J. Solid-State Circuits,
vol. 53, no. 1, pp. 236–246, Jan. 2018.
[34] D. Ye, Y. Wang, Y. Xiang, L. Lyu, H. Min, and C.-J.-R. Shi,
“A wireless power and data transfer receiver achieving 75.4% effective
power conversion efficiency and supporting 0.1% modulation depth
for ASK demodulation,” IEEE J. Solid-State Circuits, vol. 55, no. 5, Jean-Pierre David (Member, IEEE) received the
pp. 1386–1400, May 2020. Ph.D. degree from the Université Catholique de Lou-
vain, Louvain-la-Neuve, Belgium, in 2002. He has
been an Assistant Professor with the Université de
Montréal, Montreal, QC, Canada, for three years,
and moved to Polytechnique Montréal, Montreal,
in 2006, where he has been an Associate Professor,
since 2013. His research interests include digital
system design, reconfigurable computing, high-level
Aref Trigui (Member, IEEE) received the synthesis, and their applications.
degree from the Faculty of Sciences of Bizerta,
Bizerta, Tunisia, in 2010, and the M.Sc.A. degree
from the Electrical Engineering Department,
Polytechnique Montréal, Montreal, QC, Canada,
in 2014, where he is currently pursuing the Ph.D.
degree in microelectronics with the Polystim
Neurotechnologies Laboratory. His current research
interests include wireless power and data transfer
for biomedical and aerospace applications. He was
a recipient of the several awards, such as the
Tunisian Scholarship for Excellence for Graduate Studies, the National
Research Council of Canada (NSERC), and the Fonds de Recherche du
Québec-Nature et Technologie (FRQNT) Ph.D. Scholarships.
Mohamed Ali (Member, IEEE) received the B.Sc. Ahmed Chiheb Ammari (Senior Member, IEEE)
degree from the Faculty of Electronics Engineering, received the B.S. degree from the Ecole Nationale
Menoufia University, Egypt, in 2005, and the M.Sc. des Ingénieurs de Monastir, Tunisia, in 1993, and the
and Ph.D. degrees in electronics and communica- M.Sc. and Ph.D. degrees from the Institut National
tion engineering from Ain Shams University, Egypt, Polytechnique de Grenoble, France, in 1993 and
in 2011 and 2017, respectively. He joined Poly- 1996, respectively, all in electrical engineering.
technique Montréal, Quebec, Canada, as a Research Since 1997, he has been a Faculty Member with the
Intern, from 2015 to 2017, as a part of his Ph.D. pro- Institut National des Sciences Appliques et de Tech-
gram. Since 2007, he has been with the Microelec- nologies, Carthage University, Tunisia. He is cur-
tronics Department, Electronics Research Institute, rently an Associate Professor with the Department
Giza, Egypt. He is currently a Postdoctoral Fellow of Electrical and Computer Engineering, College of
with the Department of Electrical Engineering, Polytechnique Montréal, QC, Engineering, Sultan Qaboos University, Oman. His current research inter-
Canada. His current research interests include analog, RF, and mixed-signal ests include multicore and multiprocessor system-on-chip, energy-efficient
design. He is an Active Reviewer for many IEEE journals and conferences, computing of battery-operated portable devices, inductive data and power
including the IEEE T RANSACTIONS ON C IRCUITS AND S YSTEMS I: R EG - transfer for implantable medical devices, hybrid electric energy storage for
ULAR PAPERS and the IEEE T RANSACTIONS ON C IRCUITS AND S YSTEMS electric vehicles and renewable energy systems, and system-level modeling
II: E XPRESS B RIEFS . and optimization for smart grid and data centers.
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TRIGUI et al.: GENERIC WIRELESS POWER TRANSFER AND DATA COMMUNICATION SYSTEM 13
Yvon Savaria (Fellow, IEEE) received the B.Ing. Mohamad Sawan (Fellow, IEEE) received the
and M.Sc.A. degrees from Polytechnique Montréal Ph.D. degree in electrical engineering from the
in 1980 and 1982, respectively, and the Ph.D. Université de Sherbrooke, QC, Canada, in 1990.
degree from McGill University in 1985, all in elec- He was a Professor of microelectronics and bio-
trical engineering. Since 1985, he has been with medical engineering with Polytechnique Montréal,
Polytechnique Montréal, where he is currently a Canada, from 1991 to 2018. He was awarded the
Professor with the Department of Electrical Engi- Canada Research Chair in Smart Medical Devices
neering. He is also affiliated with the Hangzhou from 2001 to 2015 and was leading the Microsys-
Innovation Institute, Beihang University. His current tems Strategic Alliance of Quebec—ReSMiQ from
research interests include microelectronic circuits 1999 to 2018. He founded and chaired the IEEE-
and microsystems, such as testing, verification, val- Solid State Circuits Society Montreal Chapter from
idation, clocking methods, defect and fault tolerance, the effects of radiation 1999 to 2018 and founded the Polystim Neurotech Laboratory, Polytechnique
on electronics, high-speed interconnects and circuit design techniques, CAD Montréal, in 1994, including two major research infrastructures intended to
methods, reconfigurable computing and the applications of microelectronics build advanced medical devices. He is currently an Emeritus Professor with
to telecommunications, aerospace, image processing, video processing, radar Polytechnique Montréal. He joined Westlake University, Hangzhou, China,
signal processing, and digital signal processing acceleration. He is currently in 2019, where he is a Chair Professor, the Founder, and the Director of
involved in several projects that relate to aircraft embedded systems, radiation the Cutting-Edge Net of Biomedical Research And INnovation (CenBRAIN).
effects on electronics, asynchronous circuits design and test, green IT, wireless He has published more than 800 peer-reviewed articles, two books, and
sensor networks, virtual networks, software-defined networks, machine learn- ten book chapters and holds 12 patents. He served as a member of the
ing, computational efficiency, and application-specific architecture design. Board of Governors from 2014 to 2018. He has been the Vice-President
He holds 16 patents and has published 170 journal articles and 450 con- Publications of the IEEE CAS Society since 2019. He received several awards,
ference papers. He was the Thesis Advisor of 160 graduate students who among them the Queen Elizabeth II Golden Jubilee Medal, the Barbara
completed their studies. He is a member of the Regroupement Stratégique Turnbull 2003 Award for spinal-cord research, the Bombardier and Jacques-
en Microélectronique du Québec (RESMIQ), the Ordre des Ingénieurs du Rousseau Awards for academic achievements, the Shanghai International
Québec (OIQ), and the CMC Microsystems Board. In 2001, he was awarded Collaboration Award, and the Medal of Merit from the President of Lebanon
a Tier 1 Canada Research Chair on design and the architectures of advanced for his outstanding contributions. He is a fellow of the Canadian Academy
microelectronic systems that he held until June 2015. He was a recipient of the of Engineering and the Engineering Institutes of Canada. He is the Founder
Synergy Award of the Natural Sciences and Engineering Research Council of of the Interregional IEEE-NEWCAS Conference and the Co-Founder of the
Canada. He was the Program Co-Chairman of NEWCAS’2018. He has been International IEEE-BioCAS, ICECS, and LSC conferences. He hosted in
a Consultant or was sponsored for carrying research by Bombardier, CNRC, Montreal, as the General Chair, the 2016 IEEE International Symposium on
DesignWorkshop, DREO, Ericsson, Genesis, Gennum, Huawei, Hyperchip, Circuits and Systems (ISCAS), and the 2020 IEEE International Engineering,
Intel, ISR, Kaloom, LTRIM, Medvalgo, Miranda, MiroTech, Nortel, Octasic, Medicine and Biology Conference (EMBC). He was the Editor-in-Chief of
PMC-Sierra, Technocap, Thales, Tundra, and Wavelite. the IEEE T RANSACTIONS ON B IOMEDICAL C IRCUITS AND S YSTEMS from
2016 to 2019. He is an Associate Editor of the IEEE T RANSACTIONS ON
B IOMEDICAL E NGINEERING. He is also the “Officer” of the National Order
of Quebec.
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