pubs.acs.

org/NanoLett Letter

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-

Based Nano-Ferroelectric Devices
Zhenhai Li,§ Jinchen Wei,§ Jialin Meng, Yongkai Liu, Jiajie Yu, Tianyu Wang,* Kangli Xu, Pei Liu,
Hao Zhu, Shiyou Chen,* Qing-Qing Sun, David Wei Zhang, and Lin Chen*
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ABSTRACT: Hafnium oxide (HfO2)-based ferroelectric tunnel

junctions (FTJs) have been extensively evaluated for high-speed
and low-power memory applications. Herein, we investigated the
influence of Al content in HfAlO thin films on the ferroelectric
characteristics of HfAlO-based FTJs. Among HfAlO devices with
different Hf/Al ratios (20:1, 34:1, and 50:1), the HfAlO device
with Hf/Al ratio of 34:1 exhibited the highest remanent
polarization and excellent memory characteristics and, thereby,
the best ferroelectricity among the investigated devices. Fur-
thermore, first-principal analyses verified that HfAlO thin films
with Hf/Al ratio of 34:1 promoted the formation of the
orthorhombic phase against the paraelectric phase as well as
alumina impurities and, thus, enhanced the ferroelectricity of the
device, providing theoretical support for supporting experimental results. The findings of this study provide insights for developing
HfAlO-based FTJs for next-generation in-memory computing applications.
KEYWORDS: Aluminum-doped Hafnium oxide, ferroelectric tunnel junctions, o-phase, first-principle calculations

F erroelectric materials and nanoscale ferroelectric films

have been extensively investigated for applications in next-
generation semiconductor technology nodes.1−4 Hafnium
oxide (HfO2) thin films have attracted considerable attention
since Boscke et al. revealed the ferroelectric properties of Si-
doped HfO2 thin films in 2011.5 Ferroelectricity has also been
reported in Al-, Zr-, or Si-doped HfO2-based thin films because
they facilitate the formation of the orthorhombic (o-) phase in
HfO2 thin films.6−8 Zr-Doped HfO2 thin films have been
widely explored because of their excellent ferroelectric
performance.9 However, they require capping layer stress to
stabilize the o-phase, which leads to high manufacturing cost
and complicated processes.10 In Al-doped HfO2 (HfAlO) thin
films, the small atomic radius of Al exerts mechanical stress in
HfO2 unit cells, which stabilizes the o-phase.11,12 Lee et al.
demonstrated that the ferroelectric phase of HfO2 films was
stabilized by doping aluminum, which has limited solubility,
and the aluminum doping concentration significantly influ-
enced the ferroelectricity of the HfO2 thin films.13 Celano et al.
used the flexoelectric effect in HfAlO for inducing polar
rotations in HfO2 thin films by applying an external stress.14
Thus, it is crucial to investigate the influence of aluminum
content on the ferroelectricity of HfO2 devices.
Contemporary studies have shown that aluminum content
significantly impacts the ferroelectric characteristics of HfAlO
thin films. Ryu et al. showed that, at a specific annealing
temperature, the optimal Hf/Al cycle ratio corresponding to
the highest remanent polarization (∼20 μC cm−2) was
approximately 23:1.15 Chen et al. fabricated TiN/HfAlO/Pt/
Ti devices with Hf/Al cycle ratio of 34:1, i.e., Al content = 2%,
and these exhibited a competitive residual polarization of 2Pr =
20−30 μC cm−2.16 The optimum aluminum content of HfAlO
thin films remains to be determined, and the influence of
aluminum content on the ferroelectric properties of thin films
remains to be understood.
In this study, we investigate the effect of aluminum content
on the ferroelectric characteristic of HfO2 thin films and the
related mechanism. The aluminum content of HfAlO thin films
was controlled by alternating atomic layer deposition (ALD)
subcycles of HfO2 and Al2O3. First-principal analyses were
used to explore the mechanism of the influence of Al content
on the enhancement of the ferroelectric phase.
The 80 × 80 μm2 HfAlO devices were fabricated on Si
substrates. First, Si substrates were cleaned using absolute ethyl
alcohol and deionized water. Then, Ti and Pt bottom
Received: January 17, 2023
Revised: March 9, 2023
Published: March 13, 2023

© 2023 American Chemical Society https://doi.org/10.1021/acs.nanolett.3c00085

4675 Nano Lett. 2023, 23, 4675−4682
Nano Letters
Figure 1. (a) Schematic structure and fabrication flow of Au/Ti/HfAlO/Pt/Ti/Si, (b) cross-sectional images of the device, (c, d) interfaces 1 and 2
of Ti/HfAlO and Pt/HfAlO interfaces, respectively, (e) GIXRD pattern of the HfAlO. (inset) The PFM phase of HfAlO films. (f) XPS survey
profile of the initial form of HfAlO and core-level spectra assigned to (g) Al 2p, (h) Hf 4f, and (i) O 1s, respectively.
electrodes were deposited on the Si substrates using physical
vapor deposition (PVD). Subsequently, HfAlO thin films (10
nm) were deposited using ALD. The aluminum content of
HfAlO thin films was controlled by alternating ALD subcycles
of HfO2 and Al2O3 at a substrate temperature of 300 °C.
Thereafter, 70 nm TiN capping layers were deposited using
PVD, and the samples were annealed at 500 °C for 30 s. The
TiN layers were then fully removed by wet etching.17 Finally,
the top electrodes were patterned by the lift-off process.
To explore the mechanism of the influence of aluminum
content on the ferroelectric properties of the HfAlO, density
functional theory (DFT) calculations were carried out to
calculate the defect formation energies18 (Figure S1) with an
energy cutoff of 520 eV for plane-wave basis and projector
augmented wave pseudopotentials. A 2 × 2 × 2 supercell with
96 atoms was built for the Brillouin zone integration, and a
single Γ point was used in defect calculations.19,20 Al atoms
were introduced in HfO2 as impurity defects, and the
formation energy ΔHf and defect density N of each type of
defect were calculated21
Hf ( , q , E F) = E( , q) E host + ni(Ei + i)
+ q(E F + E VBM + V)
N ( , q , E F) = Nsitesgq e Hf ( , q , E F)/ kBT
where Hf ( , q , E F) represents the formation energy of defect
α with the charge state of q, and N ( , q , E F) is the defect
density of α at q state and with a self-consistent Fermi
energy.22 All calculations were performed using the hybrid
functional with the Heyd-Scuseria-Ernzerhof (HSE) form to
acquire suitable bandgaps.23
pubs.acs.org/NanoLett Letter
The steps for fabrication of Au/Ti/HfAlO/Pt/Ti/Si devices
are presented in Figure 1a. Figure 1b shows a cross-sectional
image of the HfAlO ferroelectric tunnel junctions (FTJs) with
about 10 nm HfAlO films. Figure S2 shows interfaces 1 and 2
between the HfAlO thin films and electrodes. The interfacial
transition zones were attributed to the reaction between the
HfAlO layer and the electrode layers.24,25 To clarify the origins
of ferroelectricity in HfAlO thin films, high-resolution
transmission emission microscopy (TEM) was performed to
determine the HfAlO phase structure, as shown in Figure 1c,d.
At the lattice fringes of the HfAlO films, the monoclinic phase
(m-phase) and the metastable o-phase coexisted. Compared
with interface 2, interface 1 showed a high proportion of the o-
phase. The capping layer TiN considerably improved the
proportion of the o-phase near the top electrode. Furthermore,
the Al atoms entered the crystal lattice of the HfAlO thin films,
which further enhanced the ferroelectricity. However, they
belonged to the same o-phase, as observed from the
asymmetric nature of the phase structure.26
To better explore the influence of Al content on the
ferroelectric properties of the HfAlO thin films, the crystal
structures of the thin films were physically characterized using
X-ray diffraction (XRD) profiles. The acquired XRD profiles
were used to identify the crystalline phases, including o- and
m-phases, which influenced the HfAlO thin films. As shown in
Figure 1e, the (101) and (111) d-spacing values were 2.95 and
2.82 Å, respectively. Meanwhile, the inset shows that the
piezoresponse force microscopy (PFM) response was equal for
+P and −P poled regions with 180° phase change, which
display excellent ferroelectricity (see Figure 3S).
Figure 1f shows the X-ray photoelectron spectroscopy
(XPS) profiles of the HfAlO thin films (Hf (16.5%), Al
(1.7%), and O) with Hf/Al cycle ratio of 34:1. Figure 1g shows
the characteristic peak located at approximately 74.05 eV
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Figure 2. Under low, intermediate, and high Al content, (a−c) neutral formation energy of Al defects (solid line) and O-defects (dashed line)
varying with oxygen chemical potential and (d−f) the formation energies of the aforementioned defects with screened Fermi levels under slightly
O-poor conditions, respectively.

Figure 3. (a) Charge transition energy levels of dominant defects, (b) formation energies of VO at different Al contents, (c) calculated defect
densities of dominant defects and carrier densities in HfAlO films; (d) VO content as a function of doping concentration; (e) extracted 2Pr and 2Ec
values as a function of Al concentration, (f) P-E curves of the HfAlO FTJs with different Al contents, (g) fatigue characteristics of the samples’
remanent polarization values; (h) retention properties.

corresponding to Al 2p, which comprised Al3+.27 Hf 4f showed
two peaks at 16.93 and 18.58 eV, which corresponded to Hf
4f7/2 and Hf 4f5/2, as shown in Figure 1h. The O 1s spectra
with three chemical compositions are shown in Figure 1i. The
main peaks at 530.22 and 531.10 eV were attributed to the
Hf−O and Al−O bonding peaks, respectively. The other peaks
corresponded to the existence of oxygen vacancies (VO).28−30
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To reveal the correlation between surface morphology and Al
content in HfAlO thin films, atomic force microscopy (AFM)
images were obtained at different Al contents (Figure S4).
Surface morphology was influenced by the lattice structure.
First-principle analyses are performed on the dominant
defects in the HfAlO thin films to further explore the influence
of Al content on their ferroelectric performance. The five types
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Figure 4. Schematic plot of influence of Al doping on the density of defects and thus o-HfO2 fractions in HfAlO films.
of defects are the oxygen vacancy (VO), interstitial oxygen
(Oi), interstitial aluminum (Ali), one hafnium replaced by one
aluminum atom (AlHf), and one hafnium replaced by two
aluminum atoms (2AlHf). Figure 2a−c shows the formation
energies of neutral Al defects under low, intermediate, and high
Al contents. The formation energies of all Al defects decreased
at high Al content; under intermediate and low Al contents, Al
defects had lower neutral formation energies than O-defects
under O-intermediate conditions.
Figure 2d−f depicts the formation energies under slightly O-
poor chemical potentials corresponding to the experimental
condition, and Figure 3a shows the transition energy level of
each type of defect. This growth condition is more realistic in
the synthesis process, and under this condition, VO is neither
too small to reduce ferroelectricity nor too high to damage the
lattice. More importantly, the formation energies of Al-related
defects were as low as those of the O-defects, illustrating the
easy doping of Al in HfO2.
The introduction of Al considerably changed the Fermi
level, which is determined by both positively and negatively
charged defects to satisfy the neutral condition. As displayed in
Figure 2d−f, with increase in Al content, the Fermi level
shifted toward the valence band maximum (VBM) because of
the decreased formation energies of the Al defects. In an Al-
free condition, the Fermi level is pinned by charged VO and Oi
at approximately 3.84 eV (dashed gray line). At low Al content,
the new Fermi level (dashed blue line) was determined by V2+ O cause lattice distortion to o-HfO2 and did not influence its
and Al−Hf at approximately 3.34 eV (Figure 2d). With more Al
doped in, the formation energy of Al3+ i decreased, and the
Fermi level further moved leftward and was stabilized by Al3+ i
and Al−Hf at 3.18 eV, as shown in Figure 2e. At high Al content,
2Al2+
Hf became more dominant and maintained the Fermi level
along with Al−Hf. However, as shown in Figure 2f, the Fermi
level shifted slightly rightward (3.28 eV) because of 2Al2+Hf.
Furthermore, the shifted Fermi level can affect the formation
of VO, which significantly promoted o-HfO2 and enhanced the
ferroelectricity. We plotted the formation energies of two
nonequivalent oxygen vacancies induced by different Al
contents in Figure 3b. VOs are positively charged under O-
intermediate or slightly O-poor conditions; therefore, with
lower Fermi levels, decreased formation energy of VO was
realized. As shown in Figure 3b, the formation energies of V2+ O1
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and V2+ O2 decreased from 2.59 and 2.63 to 1.86 and 1.65 eV,
respectively. The decreased formation energies of the defects
illustrated easier defect formation and higher defect density,
which resulted in larger o-phase content and stronger
ferroelectricity. Excessive doping can, however, increase the
Fermi level and higher formation energy of VO because of
2Al2+Hf. Therefore, to achieve low formation energy of VO,
intermediate Al content is desirable.
To further quantify the influence of Al doping on the
ferroelectric properties of the films, we calculated the self-
consistent Fermi levels, carrier densities, and defect densities
under slightly O-poor conditions from Al-poor chemical
potential, indicating that few Al atoms were added, to Al-rich
chemical potential, corresponding to heavily doped conditions
(Figure S6).31 From the perspective of change of VO density,
previous works have simulated that its density in intrinsic HfO2
is approximately 106 cm−3 under slightly O-poor conditions.32
With low Al content, the density of V2+ O increased up to 10
10
−3
cm under the same O bias, as displayed in Figure 3c in light-
blue background. An increase of 4 orders of magnitude in VO
density demonstrated that Al doping significantly influenced it,
contributing to the formation of o-HfO2 and large grain size.
Meanwhile, the impurity defect densities of Al−Hf were of the
same magnitude as V2+ O , thus confirming the feasibility of
effective doping. Al and Hf atoms have similar volumes and
ionic properties; therefore, these defects did not significantly
structural and ferroelectric characteristic (Figure S7).33
Under intermediate Al content (Figure 3c, dark-blue
background), the density of V2+ O increased to 10
12
cm−3,
which was consistent with the qualitative analysis in Figure 2e
and indicated larger o-phase fraction. Al−Hf and Al3+ i were
dominant defects, and their densities increased to approx-
imately 1016 cm−3. Higher Al content induced greater
mechanical force to stabilize the o-phase and adjusted the
Fermi energy level, which contributed to the formation of V2+ O.
Thus, larger grain size and higher o-HfO2 content can be
achieved.34
However, with further increase in Al content, the density of
−3
V2+ 11
O decreased to 10 cm instead of continuously increasing
because the formation of a large amount of 2Al2+ Hf increased the
Fermi energy level and resulted in higher formation energy of
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Nano Lett. 2023, 23, 4675−4682
Nano Letters pubs.acs.org/NanoLett
Figure 5. (a−c) Unpolarized and up and down polarization states of HfAlO, respectively, (d) P-E curves of devices under different voltages and
HfO2-based ferroelectric I−V, (e) P-E curves of devices under different frequencies, (f) dependence of conductance ratio on pulse width under
various write amplitude, (g) change of device conductance ratio with write amplitude, (h) electrical resistance switching loop of HfAlO, (i)
endurance properties of devices.
−
V2+ 2+
O . Meanwhile, the density of 2AlHf and AlHf increased to 10
22
−3
cm , which was too high for doping. More importantly, a large
amount of 2Al2+ Hf indicated that the ratio of cations and anions
in the film was greater than 1:2, which led to severe lattice
distortion and nonstoichiometry. Since the cation−anion ratio
in Al2O3 was 2:3, which was also greater than 1:2, if Al content
was too high, a large amount of paraelectric Al2O3 was formed
in the film. That is, large dopant concentration is ineffective
and remains as Al2O3 precursor in the film, which leads to low
o-HfO2 ratio and weak ferroelectricity.
To experimentally explore the role of Al in HfAlO thin films,
in Figure 3d, the peak intensities of VO in the O 1s spectrum
are extracted with different Hf/Al cycle ratios (Figure S8). The
proportion of VO increased at Al doping concentration of
4.04%, which destroyed the stable o-phase in the HfAlO thin
films; i.e., the ferroelectricity of HfAlO degraded. At Al content
of 1.7%, the proportion of VO was 14.9%, which resulted in a
stable o-phase. Figure 3e compares the 2Pr (remanent
polarization) and Ec (coercive field) of the devices with
different Al contents under 3 MV/cm. At Al content of 1.7%,
i.e., Hf/Al cycle ratio of 34:1, the optimal ferroelectricity of the
HfAlO thin films was obtained (Figure S8).
As shown in Figure 3f, the device with Hf/Al cycle ratio of
34:1 showed saturated ferroelectric responses. When the Al
content changed, the HfO2 ferroelectricity seems to deteriorate
(Figure S9). The fatigue characteristics of the devices were
tested at a sweeping voltage of 3.5 V. With increase Al content,
device fatigue was optimized, as shown in Figure 3g. The
device with Hf/Al cycle ratio of 20:1 showed excellent
endurance with 107 cycles but poor remanent polarization (∼3
μC cm−2). As shown in Figure 3h, the devices with different Al
contents exhibited long retention characteristics up to 104 s;
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Letter
thus, our devices are promising candidates for further
nonvolatile memory applications.35
Our results indicated that Al doping plays a crucial role in
the growth of o-HfO2 and thus the ferroelectricity of HfAlO
thin films. The function of Al in HfO2 is schematically
presented in Figure 4. Under ideal conditions, a global single-
crystal o-HfO2 will have no defects and impurities on the
substrate, which, theoretically, indicates extremely large
polarization, as shown in Figure 4a. However, the synthesized
o-phase usually coexists with a large amount of paraelectric
phase in the form of polycrystals, decreasing considerably
compared to the observed polarization. With increase in Al
content, even at low content (Figure 4b), the formation of Al
defects resulted in much higher density of V2+ O , which was
beneficial to the formation of o-HfO2. Under intermediate Al
content, the density of V2+ O continued to increase. Hence, the
o-HfO2 grains became larger, and the o-phase fraction became
higher, as shown in Figure 4c. For high Al content (Figure 4d),
because the density of V2+ O continues to be high, the grain size
of o-HfO2 is still larger with a small ratio of paraelectric HfO2.
However, Al2O3 can form in large quantities due to the large
density of 2AlHf 2+
, which decreased the overall ratio of
ferroelectric HfO2.
To further clarify the storage mechanism of HfAlO FTJ, the
schematic energy bands of Pt/HfAlO/Ti were plotted. As
shown in Figure 5a, the work functions of Pt, HfAlO, and Ti
were 5.65, 3.6, and 4.3 eV, respectively. When an external
electric field was applied to the devices, the ferroelectricity was
maintained by domain switching. The polarized state was
maintained even after removing the external electric field.36
Figure 5b shows the up-polarized state of the HfAlO thin films
under an applied electric field. When the external electric field
was gradually increased, the electrons in the Pt electrode were
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Nano Letters pubs.acs.org/NanoLett
able to overcome the Pt/HfAlO barrier (Δφup) in the HfAlO
thin films. When the voltage was reversed, the polarization
shifted from up to down polarization, and the electrons were
able to overcome the potential barrier (Δφdown) into the
HfAlO thin films (Figure 5c). Figure 5d shows the P-E
hysteresis curves of the HfAlO FTJs with 1.7% Al content at
different voltage sweeping ranges. With increase in voltage
sweep, larger hysteresis was observed. Figure 5e shows the P-E
hysteresis curve of the HfAlO FTJs at different frequency
voltages. With increase in the frequency, the P-E curves of the
devices deteriorated, which laid the foundation for good
storage features. With increase in write voltages, Figure 5f
shows that the conductance ratio did not change considerably
for 500 and 200 ns. For pulse width of 1000 ns, the
conductance ratio did not change until the write voltage
increased to approximately 1.5 V. When the voltage was further
increased to 3.2 V, the conductance ratio increased by 1 order
of magnitude. Figure 5g shows that the on/off conductance
ratio increased considerably when voltages of 2.5, 3, and 3.5 V
were applied. When the voltage was set to 3.5 V, the largest
on/off conductance of ∼12 was observed. The nonvolatile
resistance switching (R-V loop) of the devices was also tested
with pulse sequences of 0.5 V steps, as shown in Figure 5h. An
inverse pulse was applied for 1000 ns to get the R-V loop with
on/off conductance ratio of ∼10. The resistance states of the
devices were reliable after endurance test of 10 000 cycles
(Figure 5i).
In this study, we investigated the influence of Al content on
the ferroelectric properties of HfAlO FTJs. The P-E curves
showed that the sample with Hf/Al cycle ratio of 34:1 had
excellent ferroelectricity. With increase in Al content in the
HfAlO, the devices exhibited enhanced endurance character-
istics. The device with Hf/Al cycle ratio of 20:1 showed slight
fluctuations in ferroelectricity up to 106 cycles. Furthermore, a
first-principle analysis was used to verify that the addition of Al
contributed to the formation of the ferroelectric phase. With
increase in Al doping content, larger grain size of ferroelectric
HfO2 and lower fraction of paraelectric HfO2 was observed.
However, high Al content in the HfAlO thin films disrupted
the stabilization of the o-phase due to the formation of Al2O3.
Thus, the Al content influences the ferroelectric properties of
HfAlO thin films by influencing the crystal structure of HfO2.
To achieve excellent ferroelectricity, intermediate Al content is
recommended.
■ ASSOCIATED CONTENT
Data Availability Statement
The data that support the findings of this study are available
from the corresponding author upon reasonable request.
*
sı Supporting Information
The Supporting Information is available free of charge at
https://pubs.acs.org/doi/10.1021/acs.nanolett.3c00085.
DFT calculation process, element variety of devices with
the position, PFM and AFM phases, Al defect structure,
dominate defect density, supercell internal force analysis,
the core-level spectra assigned to O 1s and P-E curves of
the HfAlO with the different Al content (PDF)
■ AUTHOR INFORMATION
Corresponding Authors
Tianyu Wang − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
4680
Letter
International Innovation Center, Shanghai 201203, P. R.
China; orcid.org/0000-0001-8114-3481;
Email: tywang@fudan.edu.cn
Shiyou Chen − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; orcid.org/0000-0002-
4039-8549; Email: chensy@fudan.edu.cn
Lin Chen − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China; orcid.org/0000-0002-7145-7564;
Email: linchen@fudan.edu.cn
Authors
Zhenhai Li − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China
Jinchen Wei − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China
Jialin Meng − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China; orcid.org/0000-0002-2166-3220
Yongkai Liu − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China
Jiajie Yu − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China
Kangli Xu − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China
Pei Liu − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China
Hao Zhu − School of Microelectronics, Fudan University,
Shanghai 200433, P. R. China; Zhangjiang Fudan
International Innovation Center, Shanghai 201203, P. R.
China; orcid.org/0000-0003-3890-6871
Qing-Qing Sun − School of Microelectronics, Fudan
University, Shanghai 200433, P. R. China; Zhangjiang
Fudan International Innovation Center, Shanghai 201203, P.
R. China; orcid.org/0000-0002-6533-1834
David Wei Zhang − School of Microelectronics, Fudan
University, Shanghai 200433, P. R. China; Zhangjiang
Fudan International Innovation Center, Shanghai 201203, P.
R. China
Complete contact information is available at:
https://pubs.acs.org/10.1021/acs.nanolett.3c00085
Author Contributions
§
These authors contributed equally to this work.
Notes
The authors declare no competing financial interest.
■ ACKNOWLEDGMENTS
This study was supported by the National Key R&D Program
of China (2021YFA1202600), NSFC (92064009, 22175042),
https://doi.org/10.1021/acs.nanolett.3c00085
Nano Lett. 2023, 23, 4675−4682
Nano Letters pubs.acs.org/NanoLett
Science and Technology Commission of Shanghai Municipal-
ity (22501100900), Shanghai Sailing Program (23YF1402200,
23YF1402400), China Postdoctoral Science Foundation
(Grant 2022TQ0068, BX2021070, 2021M700026), and the
Zhejiang Lab’s International Talent Fund for Young
Professionals. The authors acknowledge Jiashan Fudan
lnstitute.
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