NTE104

Germanium PNP Transistor

Audio Frequency Power Amplifier

Description:
The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage (RBE = 68Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (TC ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CER IC(peak) = –0.6A, RBE = 68Ω 35 – – V
Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 1.0 mA
DC Current Gain hFE VCE = 2V, IC = 20mA 50 90 165
Base–Emitter Input Voltage VBE VCE = 2V, IC = 1A – 0.38 – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.4A – 0.29 – V
Transition Frequency fT VCB = 2V, IE = 1A – 300 – kHz
 .135 (3.45) Max

.350 (8.89) .875 (22.2)

Dia Max
Seating
Plane

.312 (7.93) Min .040 (1.02)

Emitter 1.187 (30.16)

.215 (5.45) .665

(16.9)

.156 (3.96) Dia

(2 Holes)
.430
(10.92)
.188 (4.8) R Max

.525 (13.35) R Max

Base Collector/Case