tsmc Taiwan Semiconductor Manufacturing Co.

, LTD

Document No. T-018-MM-SP-001 Rev. 0.4 Page 30

7. RF RESISTOR MODEL
The measurement results from the testchip are listed below:

(a) Sheet Resistance Table :

Film
P+ poly w/o silicide N+ poly w/o silicide
Parameters
Rp(Ohm/square) 311±65 292±66
Rint(Ohm-um) 66.98 14.84
Rgrain(Ohm) 39.39 37.22
For Rp -13.80E-6 -1.102E-3
TC1 For Rint -1.790E-3 -2.278E-3
For Rgrain 2.979E-3 4.235E-3
For Rp 581.1E-9 1.747E-6
TC2 For Rint -7.245E-6 -21.29E-6
For Rgrain -2.295E-6 -6.211E-6
For Rp 78.52E-9 97.71E-9
VC1 For Rint 229.9E-9 371.3E-9
For Rgrain 291.0E-9 368.0E-9
For Rp -488.9E-15 -1.974E-12
VC2 For Rint -1.779E-12 9.537E-12
For Rgrain -426.7E-15 4.404E-12
dl(um) 0.04696 0.07616
dw(um) 0.06061 0.08333

Film Valid Rsh Unit TC1 TC2 VC1 VC2 deltaW

Width Mean/Range (µm)
P+ Poly w/i Silicide W≥2.0 7.8±2.5 Ω/sq 2.88E-3 5.01E-7 -7.89E-4 6.19E-3 -0.051
P+ Poly w/i Silicide 0.18≤W<2.0 6.7 ± 3.5 Ω/sq 2.88E-3 5.01E-7 -7.89E-4 6.19E-3 -0.051
N+ Poly w/i Silicide W≥2.0 7.4 ± 2 Ω/sq 2.92E-3 2.66E-7 1.35E-3 7.15E-3 -0.065
N+ Poly w/i Silicide 0.18≤W<2.0 5.7 ± 4.2 Ω/sq 2.92E-3 2.66E-7 1.35E-3 7.15E-3 -0.065
N+ diff. w/o Silicide - 59±5.8 Ω/sq 1.47E-3 8.32E-7 7.55E-4 1.97E-4 -
P+ diff. w/o Silicide - 133±19 Ω/sq 1.43E-3 7.82E-7 -1.19E-3 -1.80E-4 -

* RSH values for N+ and P+ diff. w/i silicide are geometry dependent.
* Rint and Rgrain of N+/P+ poly w/o silicide are described in the section “Resistor Equivalent Circuit Model”.
* The resistor values can be written as follows for the resistors: N+/P+ poly w/i silicide, N+ diff, P+ diff:
R= R0*[1+ VC1 * dV + VC2 * (dV)2]*[1+ TC1 * dT + TC2 * (dT)2]; where dT = T - Tnominal (25 °C).
The resistors are function of temperature and the valid range is -40 °C ~ 125 °C.
Also, the resistors are function of voltage and the valid range: N+/P+ poly w/i silicide : -3.3 ~ 3.3V
N+ diff : 0 ~ 3.3V
P+ diff : -3.3 ~ 0 V
The resistance is measured with one node of resistor grounded, whereas the other node is applied by V and dV is the
voltage across the resistor.
R0 is layout-dependent and calculated from sheet resistance. The equation is:
R0 = Rsh * (L –deltaL)/ ( W – deltaW ) ; L is the drawn Length and W is the drawn width.
* The resistor values can be written as follows for the resistors: N+/P+ poly w/o silicide:
R= 2*Rc+2*Rint+2*Rgrain+Rp;
where Rint=R2*[1+ VCX1 * |dV| + VCX2 * (dV)2]*[1+ TCX1 * dT + TCX2 * (dT)2]
Rgrain=R3*[1+VCG1 * |dv|+VCG2* (dV)2]*[1+ TCG1 * dT + TCG2 * (dT)2]
Rp=R0*[1+ VCP1 * |dV| + VCP2 * (dV)2]*[1+ TCP1 * dT + TCP2 * (dT)2]
where dT = T - Tnominal (25 °C).
The resistors are function of temperature and the valid range is -40 °C ~ 125 °C.
Also, the resistors are function of voltage and the valid biasing range: N+/P+ poly w/o silicide : 0~0.5mA/um

The information contained herein is the exclusive property of TSMC and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of TSMC.
tsmc Taiwan Semiconductor Manufacturing Co., LTD

Document No. T-018-MM-SP-001 Rev. 0.4 Page 34

(2) Circuit Model for Rs of N+ and P+ Poly w/o Silicide Resistor

This section is to explain the interface resistor between RPO and Silicide. There is an
additional resistor Rend due to the depletion of dopant near the interface between RPO and
Silicide. The following figure describes the circuit model of P+ Poly w/o Silicide Resistor.

n1 n2 n1 Rcon Rend Rp Rend Rcon n2

CoSi2 CoSi2

P+ or N+ Poly w/o Silicide Circuit model

Resistor Size(drawn):L,W
Cross section of P+ or N+ Poly w/o Silicide Resistor R=2*Rcon+2*Rend+Rp
Rcon=Rc/nc (note 1)
Rend=Rint/(W-DeltaW)+Rgrain
Rp=Rsh*(L-DeltaL)/(W-DeltaW)

Note1:nc is Number of Contact, and its

default value is 2.

The information contained herein is the exclusive property of TSMC and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of TSMC.