15-4 040)
IEEE Asian Solid-State Circuits Conference
November 5-7, 2018/Taman, Taiwan
A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x
BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process
Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani and Koji Nii
Design Platform Business Dep., Renesas Electronics Corporation, Tokyo, Japan
Milsuhiko.igarashi.xw@renesas.com
Tn autonomous driving era, itis inevitable to pursue higher
performance for automotive LSIs such as advanced driver-
assistance systems (ADAS) and so on. This should be achieved
under limited power budget at high temperature condition of the
car. Therefore, requirement of higher performance and higher
‘energy efficiency are one of the key challenges and motivations
to apply cutting-edge process technologies such as 7 nm Fine
FET process [1] and so on, On the other band, as process
technology is scaled down, device reliability such as bias
temperature instability (BTD) and hot cartier injection (HCD) are
becoming more important because of decreasing design margin
with supply voltage (Vdd) scaling [2]. Moreover, an annual
mileage of the car is expected to be increased in autonomous