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15-4 040) IEEE Asian Solid-State Circuits Conference November 5-7, 2018/Taman, Taiwan A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani and Koji Nii Design Platform Business Dep., Renesas Electronics Corporation, Tokyo, Japan Milsuhiko.igarashi.xw@renesas.com Tn autonomous driving era, itis inevitable to pursue higher performance for automotive LSIs such as advanced driver- assistance systems (ADAS) and so on. This should be achieved under limited power budget at high temperature condition of the car. Therefore, requirement of higher performance and higher ‘energy efficiency are one of the key challenges and motivations to apply cutting-edge process technologies such as 7 nm Fine FET process [1] and so on, On the other band, as process technology is scaled down, device reliability such as bias temperature instability (BTD) and hot cartier injection (HCD) are becoming more important because of decreasing design margin with supply voltage (Vdd) scaling [2]. Moreover, an annual mileage of the car is expected to be increased in autonomous

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