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BTS7970B InfineonTechnologies
BTS7970B InfineonTechnologies
kr
D a t a S h e e t , R e v . 2 . 0 , Ma y 2 0 0 6
B T S 79 7 0 B
H ig h C u r r e n t P N H a lf B r i d g e
TM
N o v a l it h I C
68 A, 7 mΩ + 9 mΩ typ.
Automotive Power
N e v e r s t o p t h i n k i n g .
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Basic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Maximum Single Pulse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
1 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
1.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
1.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
1.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 12
1.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
1.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
1.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 17
1.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
1.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 18
1.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
1.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 21
2 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
3 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
3.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
3.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
5 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Product Summary
BTS 7970B
The BTS 7970B is a fully integrated high current half
bridge for motor drive applications. It is part of the P-TO-263-7
NovalithICTM family containing one p-channel highside
MOSFET and one n-channel lowside MOSFET with an
integrated driver IC in one package. Due to the p-channel
highside switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is
made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit.
The BTS 7970B provides a cost optimized solution for protected high current PWM
motor drives with very low board space consumption.
Basic Features
• Path resistance of typ. 16 mΩ @ 25 °C
• Low quiescent current of typ. 7 µA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 68 A typ. / 50 A min.
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
Type Package
BTS 7970B P-TO-263-7
1 Overview
The BTS 7970B is part of the NovalithIC family containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS 7970B can be
combined with other BTS 7970B to form H-bridge and 3-phase drive configurations.
Top-chip
1.2 Terms
Following figure shows the terms used in this data sheet.
I GN D , I D (L S)
Figure 2 Terms
2 Pin Configuration
BTS 7970B
P-TO-263-7
12 3 4 56 7
3 Maximum Ratings
-40 °C < Tj < 150 °C (unless otherwise specified)
Pos Parameter Symbol Limits Unit Test Condition
min max
Electrical Maximum Ratings
3.0.1 Supply voltage VVS -0.3 45 V
3.0.2 Logic Input Voltage VIN -0.3 5.3 V
VINH
3.0.3 HS/LS continuous drain ID(HS) -44 441) A TC < 85°C
current ID(LS) switch active
3.0.4 HS pulsed drain current ID(HS) -90 901) A TC < 85°C
tpulse = 10ms
3.0.5 LS pulsed drain current ID(LS) -90 901) A single pulse
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the device. Exposure to maximum rating conditions
for extended periods of time may affect device reliability
100
90
80
70
60
I max [A]
50
40
30
20
10
0
1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01
t pulse[s]
This diagram shows the maximum single pulse current that can be driven for a given
pulse time tpulse. The maximum reachable current may be smaller depending on the
current limitation level. Pulse time may be limited due to thermal protection of the device.
25
I V S ( o f f ) [A]
20
15
10
0
- 40 0 40 80 120 160
T [°C]
25 25
mΩ mΩ
20 20
RON(HS) RON(LS)
15 15 Tj = 150°C
Tj = 150°C
10 10 Tj = 25°C
Tj = 25°C
T j = -40°C
Tj = -40°C
5 5
4 8 12 16 20 24 V 28 4 8 12 16 20 24 V 28
VS VS
IN
t
tdr(HS) tr(HS) tdf (HS) tf (HS)
VOUT
90% 90%
∆V OUT ∆VOUT
10% 10%
IN
t
t df (LS) tf (LS) t dr(LS) tr(LS)
VOUT
90% 90%
∆VOUT ∆V OUT
10% 10%
-40 °C < Tj < 150 °C, VS = 13.5 V, Rload = 2Ω (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Low Side Switch Dynamic Characteristics
4.2.13 Rise-time of LS tr(LS) µs
0.5 1 1.5 RSR = 0 Ω
– 2 – RSR = 5.1 kΩ
2 6 11 RSR = 51 kΩ
4.2.14 Slew rate LS switch off ∆VOUT/ V/µs
tr(LS) – 11 – RSR = 0 Ω
– 6 – RSR = 5.1 kΩ
– 1.6 – RSR = 51 kΩ
4.2.15 Switch off delay time tdr(LS) µs
LS 0.6 1.3 1.9 RSR = 0 Ω
– 2.2 – RSR = 5.1 kΩ
2.6 7 11 RSR = 51 kΩ
4.2.16 Fall-time of LS tf(LS) µs
0.5 1 1.5 RSR = 0 Ω
– 2 – RSR = 5.1 kΩ
2 6 11 RSR = 51 kΩ
4.2.17 Slew rate LS switch on -∆VOUT/ V/µs
tf(LS) – 11 – RSR = 0 Ω
– 6 – RSR = 5.1 kΩ
– 1.6 – RSR = 51 kΩ
4.2.18 Switch on delay time tdf(LS) µs
LS 2.3 3.6 5.0 RSR = 0 Ω
– 5.6 – RSR = 5.1 kΩ
6.4 16 25.4 RSR = 51 kΩ
IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off.
After tCLS the switches return to their initial setting. The error signal at the IS pin is reset
after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes
(e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due
to thresholds and reaction delay times of the filter circuitry the effective current limitation
level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10
IL
tCLS
ICLx
ICLx 0
90 90
85
I C L L [A]
I C L H [A]
80 ICLH0 T j = -40°C 80
Tj = 25°C ICLL0
75
Tj = 150°C Tj = -40°C
70 70 Tj = 25°C
Tj = 150°C
65
60 60
55
50 50
0 500 1000 1500 2000 0 500 1000 1500 2000
dIL/dt [A/ms] dIL/dt [A/ms]
75 75
Tj = 25°C
I CLH I CLL
T j = -40°C
T j = 150°C
70 70
Tj = 25°C
Tj = 150°C
65 65
60 60
6 8 10 12 14 16 18 V 20 6 8 10 12 14 16 18 V 20
VS VS
In combination with a typical inductive load, such as a motor, this results in a switched
mode current limitation. That way of limiting the current has the advantage that the power
dissipation in the BTS 7970B is much smaller than by driving the MOSFETs in linear
mode. Therefore it is possible to use the current limitation for a short time without
exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current
during motor start up). However, the regular use of the current limitation is allowed only
as long as the specified maximum junction temperature is not exceeded. Exceeding this
temperature can reduce the lifetime of the device.
IIS [mA]
IIS(lim)
lue
s va
ki li
er
l ow e
val u
lis
r ki
h ighe
5 Thermal Characteristics
Note: Thermal characteristics are not subject to production test - specified by design.
6 Application
IN
OUT
M OUT
IN
IS IS
SR SR
GND GND
4.4
0.05
4.7 ±0.5
9.2 ±0.2
10.2 ±0.15
1)
2.7 ±0.5
6.5
(14.9)
0.1
17
0...0.1 5 2.4
7x 0.6 +0.1 0.5 ±0.15
-0.03
8° M
AX.
6 x 1.27 0.1 B
0.25 M AB
Footprint 10.8
9.4
16.15
4.6
0.47
0.8
8.42
HLGF1019
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8 Revision History
Edition 2006-05-09
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 5/8/06.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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