Memristors, synapses, neurons

Juan Bisquert
INTRODUCTION
Solar cell operation

The energy delivered

We want to operate extracting

maximum power
𝑃𝑃𝑒𝑒𝑒𝑒 = 𝑗𝑗𝑗𝑗
The solar cell efficiency is a
product of:
-photocurrent
-fill factor
jxV -photovoltage
𝑗𝑗𝑚𝑚𝑚𝑚 𝑉𝑉𝑚𝑚𝑚𝑚 𝑗𝑗𝑝𝑝𝑝 × 𝐹𝐹𝐹𝐹 × 𝑉𝑉𝑜𝑜𝑜𝑜
𝜂𝜂𝑃𝑃𝑃𝑃𝑃𝑃 = 𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠 = 𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠
Φ𝐸𝐸,𝑡𝑡𝑡𝑡𝑡𝑡 Φ𝐸𝐸,𝑡𝑡𝑡𝑡𝑡𝑡

3
 Impedance spectroscopy technique
Current, voltage and FF in
the solar cell depend on a
combination of processes
like charge separation,
Dual-source
recombination, contact
quality etc. co-deposition

Sequential - CVD

small perturbation:
linear response

Guerrero, A., Bisquert, J.; Garcia-Belmonte, Chemical Reviews 2021, 121, 14430–14484 4
p–i–n tandems 27%

Aydin, E.; De Wolf, S. et al., Energy Environ. Sci. 2021, 14, 4377-4390. 5
Hybrid perovskite capacitance in the dark:
electrode and bulk polarization

In dark conditions

The bulk contribution indicates

dielectric relaxation at high
frequency

The low frequency large contribution

indicates electrode polarization
Interface Bulk
Ionic double layer Dielectric relaxation

Almora, O.; Zarazua, I.; Mas-Marza, E.; Mora-Sero, I.; Bisquert, J.; Garcia-Belmonte, G. JPCL 2015, 1645-
1652. Guerrero, A.; et al The Journal of Physical Chemistry C 2016, 120, 8023-8032. 6
Hysteresis

Tress, W.; Correa Baena, J. P.; Saliba, M.; Abate, A.; Graetzel, M. Inverted Current–Voltage Hysteresis in Mixed Perovskite Solar Cells:
Polarization, Energy Barriers, and Defect Recombination, Adv. Energy Mater. 2016, 6, 1600396.
7
Capacitive hysteresis correlates to capacitance
in PSC with different contacts

Hui-Seon Kim

Capacitance
In dark in light

Kim, H.-S.; Jang, I.-H.; Ahn, N.; Choi, M.; Guerrero, A.; Bisquert, J.; Park, N.-G.
The Journal of Physical Chemistry Letters 2015, 6, 4633–4639. 8
Inductorhalide perovskite

Zohar, A.; Kedem, N.; Levine, I.; Zohar, D.; Vilan, A.; Ehre, D.; Hodes, G.; Cahen,, J. Phys. Chem. Lett. 2016, 7, 191-197.

Fabregat-Santiago, F. et al. ACS Energy Lett. 2017, 2, 2007-2013. 9

NEUROMORPHIC COMPUTATION
Huang, H.-M., Yang, R., Tan, Z.-H., He, H.-K., Zhou, W., Xiong, J., Guo, X., Adv. Mater. 2019, 31
1803849. https://doi.org/10.1002/adma.201803849 11
Neuron models
Hodgkin-Huxley model of biological neurons that
describes in detail the initiation/temporal
response of action potentials in biological cells-
illustration of a neuronal biological membrane.

Hodgkin
12
Neuron models
Hodgkin-Huxley model of biological neurons that
describes in detail the initiation/temporal
response of action potentials in biological cells-
illustration of a neuronal biological membrane.

Hodgkin
13
 Neuron action potential

Ionic channels
Capacitor
Spiking and bifurcations

Ofer, N.; Shefi, O.; Yaari, G., Branching morphology determines signal propagation dynamics
in neurons. Sci. Rep. 2017, 7 (1), 8877.
Spiking Neural Network

Incorporating time, analog

physical elements and
dynamical complexity as
computational tools
IBM TrueNorth

Merolla et al. Science 2014 17

Despite recent advances in the memristor such as resistive random-
access memory (RRAM), there are remaining technological
challenges, such as

• poor CMOS compatibility,

• crosstalk issue between memristors in the arra

• and difficult bidirectional analog resistance modulation,

that have hindered the development of a large-area array of the

memristorfor the neuromorphic computing.[
 neuromorphic image
processing

Dynamic Vision Sensors

Yousefzadeh Stochastic STDP training algorythm

Kim at el. Adv. Mater. Technol. 2021, 2100144

Halide perovskite ionic-electronic property for analog
response

20
CHEMICAL INDUCTOR
 𝑍𝑍 𝑠𝑠 = 𝐿𝐿𝐿𝐿
𝑑𝑑𝑑𝑑
The chemical inductor is a general 𝑉𝑉 = 𝐿𝐿
𝑑𝑑𝑑𝑑
denomination for a class of chemical and
material systems that provide the exact
electrical response of an inductor.

No electromagnetic effect or induction.

Bisquert, J.; Guerrero, A.
Chemical Inductor, J. Am. Chem. Soc. 2022, 144, 5996–6009.
22
The chemical inductor is a general dynamical model
It is formed by a minimum of 2 equations
(1) A conduction equation for current pathways including the fast variable voltaje u
(2) A time dependent equation for the slow variable x

𝑑𝑑𝑑𝑑 1
𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢, 𝑥𝑥 (1)
𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼
𝑑𝑑𝑑𝑑
𝜏𝜏𝑘𝑘 = 𝑔𝑔(𝑥𝑥, 𝑢𝑢) (2)
𝑑𝑑𝑑𝑑

Bisquert, J.; Guerrero, A.

Chemical Inductor, J. Am. Chem. Soc. 2022, 144, 5996–6009. 23
 Interpretation of the chemical inductor

The slow variable x can have very different interpretation in

specific models and systems
- Concentration in chemical systems as electrocatalytic reactions, corrosión,
batteries
- Electron density or current in semiconductors
- Ion channel current in neurons
- Deffect or ion density in meixed conductors as halide perovskites

Chemical inductor is general denomination not related to the chemical capacitance

(chemical capacitance is associated to a variation of the chemical potential)

24
The chemical inductor small signal ac response
Linearized equations, and change time derivative to 𝑠𝑠 = 𝑖𝑖𝜔𝜔
1
𝐼𝐼̂ = 𝐶𝐶𝑚𝑚 𝑠𝑠𝑢𝑢� + 𝑓𝑓𝑓𝑢𝑢� + 𝑥𝑥� (1)
𝑅𝑅𝐼𝐼
𝑔𝑔𝑢𝑢
𝑥𝑥� = 𝑢𝑢� (2)
−𝑔𝑔𝑥𝑥 +𝜏𝜏𝑘𝑘 𝑠𝑠

Definition of impedance
𝑢𝑢�
𝑍𝑍 =
𝐼𝐼̂
we obtain
1 𝑔𝑔𝑢𝑢
𝐼𝐼̂ = 𝐶𝐶𝑚𝑚 𝑠𝑠 + 𝑓𝑓𝑓 + 𝑢𝑢�
𝑅𝑅𝐼𝐼 −𝑔𝑔𝑥𝑥 + 𝜏𝜏𝑘𝑘 𝑠𝑠
25
The chemical inductor small signal ac response
The circuit elements are defined as
𝑅𝑅𝐼𝐼
𝑅𝑅𝑏𝑏 = ;
𝑓𝑓𝑢𝑢
𝑔𝑔𝑢𝑢
𝑅𝑅𝑎𝑎 = − ;
𝑔𝑔𝑥𝑥
𝜏𝜏𝑘𝑘
𝐿𝐿𝑎𝑎 =
𝑔𝑔𝑢𝑢

The impedance takes the form

1 −1
−1
𝑍𝑍(𝑠𝑠) = 𝐶𝐶𝑚𝑚 𝑠𝑠 + 𝑅𝑅𝑏𝑏 +
𝑅𝑅𝑎𝑎 +𝐿𝐿𝑎𝑎 𝑠𝑠

26
 𝑑𝑑𝑑𝑑 1
Chemical inductor 𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢, 𝑥𝑥
𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼
𝑑𝑑𝑑𝑑
Short time response 𝜏𝜏𝑘𝑘 = 𝑔𝑔(𝑥𝑥, 𝑢𝑢)
𝑑𝑑𝑑𝑑
f(u)/RI

𝑑𝑑𝑑𝑑 1
𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢
𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼
𝑑𝑑𝑑𝑑
𝐼𝐼 = 𝐶𝐶𝑚𝑚
𝑑𝑑𝑑𝑑

u
27
 𝑑𝑑𝑑𝑑 1
Chemical inductor 𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢, 𝑥𝑥
𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼
𝑑𝑑𝑑𝑑
Long time response 𝜏𝜏𝑘𝑘 = 𝑔𝑔(𝑥𝑥, 𝑢𝑢)
𝑑𝑑𝑑𝑑
f(u)/RI

1
𝐼𝐼 = 𝑓𝑓 𝑢𝑢 + 𝑥𝑥
𝑅𝑅𝐼𝐼
x(u)
𝑑𝑑𝑑𝑑
𝜏𝜏𝑘𝑘 = 𝑔𝑔(𝑥𝑥, 𝑢𝑢)
𝑑𝑑𝑑𝑑

u
28
Meaning of spectra of the chemical inductor

Short time/ high frequency

𝑅𝑅𝑏𝑏

29
Meaning of spectra
Long time/ low frequency

1 1
+
𝑅𝑅𝑏𝑏 𝑅𝑅𝑎𝑎 30
Nano Lett. 2006, 6, 640-650 31
Chemical inductor in
OLED Thin film solar cell halide perovskite

Halide perovskite single cristal. App.

Phys. Lett. 2017, 111, 163504
OLED, Chem. Phys. Lett. 2006, CdTe solar cell. Nano Lett. 2006, 6, 640-
422, 184-191 650
32
CAPACITIVE AND INDUCTIVE
HYSTERESIS
p–i–n tandems 27%

Aydin, E.; De Wolf, S. et al., Energy Environ. Sci. 2021, 14, 4377-4390. 34
Tuning the hysteresis by surface layers

Normal hysteresis Inverted hysteresis

Hysteresis-normal

Capacitive hysteresis: Hysteresis-free

hysteresis index positive Hysteresis-inverted

Inverted hysteresis: hysteresis

index negative

Rong Y., Juan Bisquert. Hongwei Han et al, Energy & Environmental Science 2017,10, 2383-2391. 35
Measure the jV curve

𝑉𝑉 𝑡𝑡 = 𝑉𝑉0 + 𝑣𝑣0 𝑡𝑡
voltage

time

Chen, B.; Yang, M.; Zheng, X.; Wu, C.; Li, W.; Yan, Y.; Bisquert, J.; Garcia-Belmonte, G.; Zhu, K.; Priya, S.
J. Phys. Chem. Lett. 2015, 6, 4693-4700. 36
 Voltage scan at rate s
𝑉𝑉 𝑡𝑡 = 𝑉𝑉0 + 𝑣𝑣0 𝑡𝑡
voltage

4
Increasing scan rate Forward capacitive current (s>0) increases
time 2

J (mA·cm )
-2
0
𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑
𝑗𝑗𝐶𝐶 = = 𝐶𝐶 faster
𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑 -2

-4
-0.9 -0.6 -0.3 0.0 0.3 0.6 0.9
𝑗𝑗𝐶𝐶 = 𝑠𝑠𝑠𝑠
Voltage (V)

Constant capacitance

Dark jV curve
37
Capacitive hysteresis

38
Bisquert, J.; Guerrero, A.
Chemical Inductor, J. Am. Chem. Soc. 2022, 144, 5996–6009.

Inductive hysteresis: inverted

Forward capacitive current (s>0) decreases

faster

𝑗𝑗𝐶𝐶 = 𝑠𝑠𝑠𝑠 negative capacitance

39
Inductive hysteresis

40
Capacitive and inductive hysteresis

Juan Bisquert, Antonio Guerrero, and Cedric Gonzales

ACS Physical Chemistry Au 2021, 1, 25-44 41
MEMRISTORS FOR NEUROMORPHIC
COMPUTATION
Memristive systems

Pershin, Y. V.; Di Ventra, M. Memory effects in complex materials and nanoscale systems,
Advances in Physics 2011, 60, 145-227. 43
Memristors
•A memristor is a device that has pinched hysteresis under a bipolar
periodic perturbation
•It is simpler than a transistor in that the control occurs by 2 contacts
•Memory storage applications
•Biological intelligence: neuromorphic applications

Chua, L. Memristor-The missing circuit element, IEEE Transactions on Circuit Theory 1971, 18, 507-519.
44
Resistive switching by filament conduction

C. Gu, J.-S. Lee, ACS Nano 2016, 10, 5413-5418.

45
2D Ruddlesden−Popper Lead Halide Memristors

Solanki, A.; Guerrero, A.; Zhang, Q.; Bisquert, J.; Sum, T.C. J. Phys. Chem. Lett. 2020, 11, 463−470 46
Halide perovskite memristor hysteresis
FTO/PEDOT:PSS/RP-
Perovskite/Ag/Au

Dr. Antonio Guerrero

A perovskite memristor
contains enormous
inverted hysteresis

Cedric Gonzales
INAM

C. Gonzales, A. Guerrero, J. Bisquert, Appl. Phys. Lett. 2021, 118, 073501

Model for halide perovskite memristor
𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑
𝐼𝐼𝑡𝑡𝑡𝑡𝑡𝑡 = 𝐶𝐶𝑚𝑚 + 𝑄𝑄𝑚𝑚 + 𝑖𝑖𝑐𝑐 + 𝑅𝑅𝑢𝑢
𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑 𝑏𝑏

𝑑𝑑𝑖𝑖𝑐𝑐
𝜏𝜏𝑑𝑑 = 𝑖𝑖𝑐𝑐0𝑓𝑓 − 𝑖𝑖𝑐𝑐
𝑑𝑑𝑑𝑑

𝑢𝑢−𝑉𝑉𝑇𝑇
𝑑𝑑𝑑𝑑 −
𝜏𝜏𝑘𝑘 = (1 − 𝑓𝑓) − 𝑒𝑒 𝑉𝑉𝑚𝑚 𝑓𝑓
𝑑𝑑𝑑𝑑

Berruet, M… Guerrero, A.; Bisquert, J. Physical model for the current-voltage hysteresis and impedance of
halide perovskite memristors, ACS Energy Lett. 2022, 7, 1214–1222.
Impedance of halide perovskite memristor

Berruet, M… Guerrero, A.; Bisquert, J. Physical model for the current-voltage hysteresis and impedance of
halide perovskite memristors, ACS Energy Lett. 2022, 7, 1214–1222.
Memristor mechanisms

C. Gonzales, A. Guerrero JPCL 2023

 Fabrication of halide
perovskite memristors
Perovskite Reason
MAPI This is the formulation that we understand the most.
MAPbBr3 Stable and activated ion migration
2D y RP perovskites with large cations: Reduced ion migration as the 3D network is disrupted by the large
cations leading to low dimensional crystalline structures. They are
• Phenylethyl ammonium – PE
robust and stable.
• Butyl ammonium – BA
• Guanidinium- GA
• etc...
Caping layers with large cation Modify the operation mechanisms reducing interaction of contact with
perovskite
3D + 2D capping layer
-Bulk vs contact effects
• Phenylethyl ammonium – PE
• Butyl ammonium – BA
• Guanidinium- GA
– Neuristor (NDR)
• etc...
• Lead free A3Bi2I9
Contacts Types of contacts
Low reactivity metals:
Use
Use as volatile memory. Weak interactions between migrating
ions and contact
• Platinum - Pt
• Gold - Au
• etc...
Intermediate reactivity metals Strong interactions between migrating ions and contacts

• Copper - Cu – Neuristor (NDR) response may be found with stable properties

• Cobalt – Co
• Titanium – Ti
• etc...…
Highly reactive metals Use as non-volatile memory. Very strong interactions between
migrating ions and contacts with formation of covalent bonds.
• Silver – Ag
• Aluminum - Al – Neuristor (NDR) response may be found but response may be
• Calcium - Ca irreversible and not suitable for cycles.
Organic Buffer layers Modify the operation mechanisms reducing interaction of
contact with perovskite
• PMMA
• Spiro-OMeTAD -Bulk vs contact effects
• PCBM
• ....
Inorganic Buffer layers Modify the operation mechanisms reducing interaction of
contact with perovskite
• Silver iodide – AgI
• Lithium fluoride – LiF -Bulk vs contact effects
• ...
Bisquert, J., Guerrero, A.
Dynamic Instability and Time Domain Response of a Model Halide Perovskite Memristor for Artificial Neurons
J. Phys. Chem. Lett. 2022, 13, 3789−3795

Time transient experiments

𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑
𝐼𝐼𝑡𝑡𝑡𝑡𝑡𝑡 = 𝐶𝐶𝑚𝑚 + 𝑄𝑄𝑚𝑚 + 𝑖𝑖𝑐𝑐0 𝑓𝑓 + 𝑅𝑅𝑢𝑢
𝑑𝑑𝑑𝑑 𝑑𝑑𝑑𝑑 𝑏𝑏

𝑢𝑢−𝑉𝑉𝑇𝑇
𝑑𝑑𝑑𝑑 −
𝜏𝜏𝑘𝑘 = (1 − 𝑓𝑓) − 𝑒𝑒 𝑉𝑉𝑚𝑚 𝑓𝑓
𝑑𝑑𝑑𝑑
SYNAPSE
Synapses

Each synapse is characterized by a “synaptic strength” (or

weight) w which determines the efficacy of a pre-synaptic spike
in contributing to a cumulative action at the post-synaptic
neuron.
We interpret w as a kind of structural parameter of
the synapse (like the amount of one or more metabolic
substances) that directly controls the efficacy of this synapse per
spike.

Wang, Z. et al Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing,
Nat. Mater. 2017, 16, 101-108.
Linares-Barranco, B. On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex,
55
Frontiers Neuroscience 2011, 5, 26.
57
Xu, W.; Cho, H.; Kim, Y.-H.; Kim, Y.-T.; Wolf, C.; Park, C.-G.; Lee, T.-W. Organometal
Halide Perovskite Artificial Synapses. Adv. Mater. 2016, 28, 5916-5922. 59
Ilyas, N.; Li, D.; Li, C.; Jiang, X.; Jiang, Y.; Li, W. Analog Switching and Artificial Synaptic Behavior of
Ag/SiOx:Ag/TiOx/P++-Si Memristor Device. Nanoscale Research Letters 2020, 15 (1), 30.
60
Leaky integrate-and-fire neurons based on perovskite
memristor for spiking neural networks
Jia-Qin Yang a,b, Ruopeng Wang a,b, Zhan-Peng
Wang c, Qin-Yuan Ma c, Jing-Yu Mao c, Yi Ren c,
Xiaoyang Yang b, Ye Zhou , Su-Ting Han

61
The key for understanding synapsis
potentiation

62
 Analog compact
neurons and synapses
Make artificial neurons and synapses
 Each device is a memristor by single layer of
halide perovskite (instead of dozens of transistors
and capacitors)

 A single material provides the analog response

required.
IMPEDANCE AND BIFURCATION.
NEURON SPIKING
Self-sustained oscillations in
electrochemistry

Koper, M. T. M. Non-linear phenomena in electrochemical systems,

Journal of the Chemical Society, Faraday Transactions 1998, 94, 1369. 65
Neuron models

Kenneth Cole

A. Bou, J. Bisquert. Impedance spectroscopy dynamics of biological neural elements: from memristors to neurons and synapses,
J. Phys. Chem. B 2021, 125, 9934–9949. 66
 FitzHugh-Nagumo neuron model

Richard FitzHugh with analog computer at

NIH, ca. 1960 3
𝜏𝜏𝑚𝑚 𝑑𝑑𝑑𝑑 𝑢𝑢
𝑑𝑑𝑑𝑑 = − 3𝑢𝑢2 + 𝑢𝑢 + 𝑅𝑅𝐼𝐼 (−𝑤𝑤 + 𝐼𝐼)
1

𝑑𝑑𝑑𝑑 1
𝜏𝜏𝑘𝑘 = 𝑢𝑢 − 𝑏𝑏𝑏𝑏
𝑑𝑑𝑑𝑑 𝑅𝑅𝑤𝑤
J. Bisquert. J. Phys. Chem Lett., 12, 11005–11013 (2021).
J. Bisquert, Appl. Phys. Rev. 9, 011318 (2022)
68
2-dimensional FitzHugh Nagumo
with negative resistance
3
𝜏𝜏𝑚𝑚 𝑑𝑑𝑑𝑑 𝑢𝑢
𝑑𝑑𝑑𝑑 = − 3𝑢𝑢2 + 𝑢𝑢 + 𝑅𝑅𝐼𝐼 (−𝑤𝑤 + 𝐼𝐼)
1

𝑑𝑑𝑑𝑑 1
𝜏𝜏𝑘𝑘 = 𝑢𝑢 − 𝑏𝑏𝑏𝑏
𝑑𝑑𝑑𝑑 𝑅𝑅𝑤𝑤

1 �3
𝑢𝑢
𝐼𝐼̅ = − 𝑢𝑢
� + 𝑤𝑤
𝑅𝑅𝐼𝐼 3𝑢𝑢12

J. Bisquert. J. Phys. Chem Lett. 2021, 12, 11005–11013. 69

70
 Impedance of neurons
Impedance of neurons

1. Minimal two-dimensional neuron model contains a capacitor and inductor and negative

resistance

2. The Hopf bifurcation is recognized by a transition of the resistance to negative values

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

Advanced Intelligent Systems, 2, 2020, DOI: 10.1002/aisy.201900189

Conclusions
Nonlinear models in the neuron style allow us to make análisis of different techniques

Calculate the small signal versión and picture an equivalent circuit.

The equivalent circuit gives a key for understanding the time domain response

73
Acknowledgments
Juan Bisquert
Follow @physolcell

Antonio Guerrero
Agustín Bou
Cedric Gonzales
Enrique Hernández-Balaguera

Visit www.nanoge.org
for videos on scientific publishing

74
 Learning the basics of solar energy conversion?

Visit https://www.nanoge.org

75
Juan Bisquert, Antonio Guerrero, and Cedric Gonzales
ACS Physical Chemistry Au 2021, 1, 25-44 76
Capacitive hysteresis correlates to capacitance
in PSC with different contacts

Hui-Seon Kim

Capacitance
In dark in light

Kim, H.-S.; Jang, I.-H.; Ahn, N.; Choi, M.; Guerrero, A.; Bisquert, J.; Park, N.-G.
The Journal of Physical Chemistry Letters 2015, 6, 4633–4639. 77
Francisco Fabregat-Santiago
INAM

78
Chemical inductor in halide perovskites

Short time response

f(u)/RI

𝑑𝑑𝑑𝑑 1
𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢
+ 𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼
+
𝑑𝑑𝑑𝑑
𝐼𝐼 = 𝐶𝐶𝑚𝑚
𝑑𝑑𝑑𝑑

u
79
Chemical inductor in halide perovskites

Short time response

𝑑𝑑𝑑𝑑 1
𝐼𝐼 = 𝐶𝐶𝑚𝑚 + 𝑓𝑓 𝑢𝑢
f(u)/RI 𝑑𝑑𝑑𝑑 𝑅𝑅𝐼𝐼

𝑑𝑑𝑑𝑑
𝜏𝜏𝑘𝑘 = 𝑔𝑔(𝑥𝑥, 𝑢𝑢)
+
𝑑𝑑𝑑𝑑
Additional
+
recombination
current +

u
80
Ghahremanirad, E.; Bou, A.; Olyaee, S.; Bisquert, J. ,
The Journal of Physical Chemistry Letters, 2017, 8, 1402
Surface polarization model

Agustin Bou

𝑑𝑑𝑉𝑉𝑠𝑠 𝑉𝑉𝑠𝑠 ⁄𝛾𝛾+𝑉𝑉⁄𝛽𝛽+𝑉𝑉𝑏𝑏𝑏𝑏 ⁄𝛾𝛾 ⁄𝑘𝑘𝐵𝐵 𝑇𝑇

𝑗𝑗 = 𝐶𝐶𝑎𝑎𝑎𝑎𝑎𝑎 + 𝑗𝑗𝑝𝑝𝑝 − 𝑗𝑗𝑟𝑟𝑟𝑟𝑟𝑟0 𝑒𝑒 𝑞𝑞
𝑑𝑑𝑑𝑑
𝑑𝑑𝑉𝑉𝑠𝑠 𝑉𝑉𝑠𝑠 − (𝑉𝑉 − 𝑉𝑉𝑏𝑏𝑏𝑏 )
=− Elnaz Ghahremanirad
𝑑𝑑𝑑𝑑 𝜏𝜏𝑘𝑘𝑘𝑘𝑘𝑘

81
Ghahremanirad, E.; Bou, A.; Olyaee, S.; Bisquert, J. ,
The Journal of Physical Chemistry Letters, 2017, 8, 1402
Surface polarization model

Chemical inductor. The slow variable is the voltage

𝑑𝑑𝑉𝑉𝑠𝑠 𝑉𝑉𝑠𝑠 − (𝑉𝑉 − 𝑉𝑉𝑏𝑏𝑏𝑏 )

=−
𝑑𝑑𝑑𝑑 𝜏𝜏𝑘𝑘𝑘𝑘𝑘𝑘

82
TRANSITION FROM CAPACITOR TO
INDUCTOR IN PEROVSKITES
Transition from capacitor to inductor effect in
MABrPb perovskite solar cell

Gonzales, C.; Guerrero, A.; Bisquert, J. Transition from capacitive to inductive hysteresis: A neuron-style model to correlate I-V curves to
impedances of metal halide perovskites,
J. Phys. Chem. C 2022, 126, 13560–13578. 84
 𝑑𝑑𝑑𝑑
𝐼𝐼𝑡𝑡𝑡𝑡𝑡𝑡 = 𝐶𝐶𝑔𝑔 + 𝐼𝐼𝑣𝑣 (𝑣𝑣)
𝑑𝑑𝑑𝑑
𝑑𝑑𝑄𝑄𝑠𝑠 (𝑤𝑤)
𝐼𝐼𝑣𝑣 𝑣𝑣 = + 𝐼𝐼𝑐𝑐 𝑤𝑤 + 𝑖𝑖𝑑𝑑
𝑑𝑑𝑑𝑑
𝑑𝑑𝑖𝑖𝑑𝑑
𝜏𝜏𝑑𝑑 = 𝐼𝐼𝑑𝑑 𝑤𝑤 − 𝑖𝑖𝑑𝑑
𝑑𝑑𝑑𝑑

Gonzales, C.; Guerrero, A.; Bisquert, J. Transition from capacitive to inductive hysteresis: A neuron-style model to correlate I-V
curves to impedances of metal halide perovskites,
J. Phys. Chem. C 2022, 126, 13560–13578. 85
Gonzales, C.; Guerrero, A.; Bisquert, J. Transition from capacitive to inductive hysteresis: A neuron-style model to correlate I-V curves to
impedances of metal halide perovskites,
J. Phys. Chem. C 2022, 126, 13560–13578. 86
Gonzales, C.; Guerrero, A.; Bisquert, J. Transition from capacitive to inductive hysteresis: A neuron-style model to correlate I-V curves to
impedances of metal halide perovskites,
J. Phys. Chem. C 2022, 126, 13560–13578. 87
Time domain and frequency domain
Large signal time domain Small signal frequency domain

Gonzales, C.; Guerrero, A.; Bisquert, J. Transition from capacitive to inductive hysteresis: A neuron-style model to correlate I-V curves to
impedances of metal halide perovskites, J. Phys. Chem. C 2022, 126, 13560–13578. 88
Enrique Hernández-Balaguera, Juan Bisquert
Negative Transient Spikes in Halide Perovskites, ACS Energy Lett. 2022, 2602-2610. 89