DATA SHEET

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TRANSISTOR

2SK3480
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION ORDERING INFORMATION

The 2SK3480 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE
designed for high current switching applications.
2SK3480 TO-220AB
2SK3480-S TO-262
FEATURES
2SK3480-ZJ TO-263
• Super low on-state resistance:
2SK3480-Z TO-220SMDNote
RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A)
Note TO-220SMD package is produced only
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A)
in Japan.
• Low Ciss: Ciss = 3600 pF TYP.
(TO-220AB)
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±50 A
Note1
Drain Current (pulse) ID(pulse) ±100 A
Total Power Dissipation (TC = 25°C) PT1 84 W (TO-262)
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note2
Single Avalanche Current IAS 34 A
Note2
Single Avalanche Energy EAS 116 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
(TO-263, TO-220SMD)
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V

THERMAL RESISTANCE
Channel to Case Rth(ch-C) 1.48 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15078EJ1V0DS00 (1st edition) © 2001

Date Published December 2001 NS CP(K)
Printed in Japan
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 25 A 17 34 S

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 25 A 25 31 mΩ

RDS(on)2 VGS = 4.5 V, ID = 25 A 27 36 mΩ

Input Capacitance Ciss VDS = 10 V 3600 pF

Output Capacitance Coss VGS = 0 V 360 pF

Reverse Transfer Capacitance Crss f = 1 MHz 190 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 25 A 15 ns

Rise Time tr VGS = 10 V 11 ns

Turn-off Delay Time td(off) RG = 0 Ω 68 ns

Fall Time tf 6.0 ns

Total Gate Charge QG VDD = 80 V 74 nC

Gate to Source Charge QGS VGS = 10 V 10 nC

Gate to Drain Charge QGD ID = 50 A 20 nC

Body Diode Forward Voltage VF(S-D) IF = 50 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 50 A, VGS = 0 V 70 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 180 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T. VGS

RG = 25 Ω L RL
VGS 90%
10% VGS
Wave Form
RG 0
PG. 50 Ω VDD PG.
VDD
VGS = 20 → 0 V VDS
90% 90%
VGS VDS
BVDSS 10% 10%
0 VDS 0
IAS Wave Form

ID VDS τ td(on) tr td(off) tf

VDD
τ = 1 µs ton toff
Duty Cycle ≤ 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D15078EJ1V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
120 140
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 120

100
80
80
60
60
40
40
20
20

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

1000

ID(pulse) PW
100
ID - Drain Current - A

10 =
0 10
1 µs µs
ID(DC) m
10 s
d
ite V) P D m
s
10 L im 10 Limowe C
o n) S = i t
rD
ed is
( G
S s
RDat V ipa
tio
( n

TC = 25˚C
Single Pulse
0.1
0.1 1 10 100 1000
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - ˚C/W

100 Rth(ch-A) = 83.3˚C/W

10

1 Rth(ch-C) = 1.48˚C/W

0.1

TC = 25˚C
Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D15078EJ1V0DS 3

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DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
1000 100
Pulsed

80
ID - Drain Current - A

100

ID - Drain Current - A
VGS =10 V

4.5 V
60
TA = −40˚C
10 25˚C
75˚C
150˚C 40

1
20

VDS = 10 V Pulsed
0.1 0
1 2 3 4 5 3 4
0 1 2 5
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
50
| yfs | - Forward Transfer Admittance - S

100 VDS = 10 V
Pulsed
Pulsed
40
10
TA = 150˚C
75˚C 30 ID = 50 A
25˚C
1 −40˚C
25 A
20

0.1
10

0.01 0
0.01 0.1 1 10 100 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE CUT-OFF VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

100 4.0
Pulsed VDS = 10 V
ID = 1 mA
VGS(off) - Gate Cut-off Voltage - V

80
3.0

60
2.0
40
VGS = 4.5 V
1.0
20 10 V

0 0
0.1 1 10 100 −50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet D15078EJ1V0DS

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DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE FORWARD VOLTAGE
70 1000
Pulsed Pulsed

ISD - Diode Forward Current - A

60

50 100
VGS = 10 V
40 VGS = 4.5 V
0V
10 V 10
30

20
1
10
ID = 25 A
0 0.1
−50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. SWITCHING CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE
10000 1000

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

Ciss

1000 100 td(off)

Coss
td(on)
Crss 10
100
tr
tf
VDD = 50 V
VGS = 0 V VGS = 10 V
10
f = 1 MHz RG = 0 Ω
1
0.01 0.1 1 10 100 0.1 1 10 100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
1000 100 10
di/dt = 100 A/ns
VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

trr - Reverse Recovery Time - ns

VGS = 0 V
80 8
VDD = 80 V VGS
50 V
100 20 V
60 6

40 4
10
20 2
VDS

0 ID = 83 A 0
1
0.1 1 10 100 0 20 40 60 80
QG - Gate Charge - nC
IF - Drain Current - A

Data Sheet D15078EJ1V0DS 5

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SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
1000 160
VDD = 50 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = 20 → 0 V

Energy Derating Factor - %

IAS ≤ 34 A
120
100 100
IAS = 34 A
80
EAS
=1 60
16
mJ
10
40
VDD = 50 V
VGS = 20 → 0 V 20
RG = 25 Ω
1 Starting Tch = 25˚C 0
0.01 0.1 1 10 25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - mH

6 Data Sheet D15078EJ1V0DS

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PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut)

4.8 MAX.

1.0±0.5
10.6 MAX. 4.8 MAX.
3.0±0.3

φ 3.6±0.2 10 TYP. 1.3±0.2

1.3±0.2
10.0 TYP.

5.9 MIN.

8.5±0.2
15.5 MAX.
4
1 2 3
4

12.7 MIN.
1 2 3
1.3±0.2
6.0 MAX.

12.7 MIN.

1.3±0.2
0.75±0.3 0.5±0.2 2.8±0.2
2.54 TYP. 2.54 TYP.
0.75±0.1 0.5±0.2 2.8±0.2
1.Gate
2.54 TYP. 2.54 TYP.
2.Drain
1.Gate 3.Source
2.Drain 4.Fin (Drain)
3.Source
4.Fin (Drain)

Note
3) TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z)

10 TYP. 4.8 MAX. 10 TYP. 4.8 MAX.

1.3±0.2 1.3±0.2
4 4
1.0±0.5

1.0±0.5
8.5±0.2

8.5±0.2

1 2 3 1 2 3
5.7±0.4

3.0±0.5
1.1±0.4

1.4±0.2 P. 1.4±0.2 P.
TY . TY .
R P R TYP
0.7±0.2 0.5 TY 0.5±0.2 0.75±0.3 0 . 5
R
R .8 0.5±0.2
2.54 TYP. 2.54 TYP. 0.8 2.54 TYP. 2.54 TYP. 0

1.Gate 1.Gate
2.Drain 2.Drain
3.Source 3.Source
2.8±0.2

2.8±0.2

4.Fin (Drain) 4.Fin (Drain)

EQUIVALENT CIRCUIT Note This package is produced only in Japan.

Drain Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
Body an additional protection circuit is externally required if a voltage
Gate Diode exceeding the rated voltage may be applied to this device.

Gate
Protection Source
Diode

Data Sheet D15078EJ1V0DS 7

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• The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest p ublications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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