52'%+(+%#6+10

&GXKEG0COG IGBT MODULE

6[RG0COG 2MBI400U4H-120

5RGE0Q MS5F 6038

Feb. 09 ¶05 S.Miyashita

Feb. 09 ¶05 T.Miyasaka Y.Seki 1
MS5F6038 13
K.Yamada
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Feb.-09 -¶05 'PCEVOGPV +UUWGF T.Miyasaka K.Yamada Y.Seki

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2
MS5F6038
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 2MBI400U4H-120

1. Outline Drawing ( Unit : mm )

2. Equivalent circuit

MS5F6038 3
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3. Absolute Maximum Ratings ( at Tc= 25o C unless otherwise specified )
Maximum
Items Symbols Conditions Units
Ratings
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Ic Continuous Tc=25oC 600
Tc=80oC 400
Collector current Icp 1ms Tc=25oC 1200
A
Tc=80oC 800
-Ic 400
-Ic pulse 1ms 800
Collector Power Dissipation Pc 1 device 2045 W
Junction temperature Tj +150 o
Tstg -40 to +125 C
Storage temperature
Isolation
between terminal and copper base (*1) Viso AC : 1min. 2500 VAC
voltage
Screw Mounting (*2) 3.5
- Nm
Torque Terminals (*3) 4.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)

4. Electrical characteristics ( at Tj= 25o C unless otherwise specified )

Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage VCE=1200V
ICES - - 4.0 mA
collector current VGE=0V
Gate-Emitter VCE=0V
IGES - - 800 nA
leakage current VGE=±20V
Gate-Emitter VCE=20V
VGE(th) 4.5 6.5 8.5 V
threshold voltage Ic=400mA
VCE(sat) Ic=400A Tj=25oC - 2.15 2.30
Collector-Emitter (terminal) VGE=15V Tj=125oC - 2.35 -
V
saturation voltage VCE(sat) Tj=25oC - 1.90 2.05
(chip) Tj=125oC - 2.10 -
Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 45 - nF
ton Vcc=600V - 0.32 1.20
Turn-on time tr Ic=400A - 0.10 0.60
tr(i) VGE=±15V - 0.03 - us
toff RG=1.5ȍ - 0.41 1.00
Turn-off time
tf - 0.07 0.30
VF IF=400A Tj=25oC - 1.90 2.05
Forward on voltage
(terminal) VGE=0V Tj=125oC - 2.00 -
V
VF Tj=25oC - 1.65 1.80
(chip) Tj=125oC - 1.75 -
Reverse recovery time trr IF=400A - - 0.35 us
Lead resistance,
R lead - 0.53 - mȍ
terminal-chip (*4)
(*4) Biggest internal terminal resistance among arm.

MS5F6038 4
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5. Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.061
Thermal resistance(1device) Rth(j-c)
FWD - - 0.11 o
Contact Thermal resistance C/W
Rth(c-f) with Thermal Compound - 0.0125 -
(1 device) (*5)
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.

6. Indication on module

Logo of production

2MBI400U4H-120
400A 1200V

Lot.No. Place of manufacturing (code)

7. Applicable category
This specification is applied to IGBT-Module named 2MBI400U4H-120.

8. Storage and transportation notes

‡ The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .

‡ Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.

‡ Avoid exposure to corrosive gases and dust.

‡ Avoid excessive external force on the module.

‡ Store modules with unprocessed terminals.

‡ Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

㨪
㨪



8 8
8 )'
. VT T

8%' +T T +E
㨪
㨪

8 EE  

+E   8%' 

8
㨪
㨪

4) #
8 %'
8 )'
VT
K  VH
+E VT VQ H H
VQ P

10. Packing and Labeling

Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box

MS5F6038 5
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11. Reliability test results

Reliability Test Items

Reference
Test Number Accept-
norms
cate- Test items Test methods and conditions of ance
EIAJ ED-4701
gories sample number
(Aug.-2001 edition)
1 Terminal Strength Pull force : 40N Test Method 401 5 (0:1)
(Pull test) Test time : 10±1 sec. Method㸇
2 Mounting Strength Screw torque : 2.5 ~ 3.5 N䍃m (M5) Test Method 402 5 (0:1)
3.5 ~ 4.5 N䍃m (M6) method㸈
Mechanical Tests

Test time : 10±1 sec.

3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 (0:1)
Sweeping time : 15 min. Reference 1
Acceleration : 100m/s2 Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration : 5000m/s2 Test Method 404 5 (0:1)
Pulse width : 1.0msec. Condition code B
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 㷄 Test Method 201 5 (0:1)
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 㷄 Test Method 202 5 (0:1)
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 㷄 Test Method 103 5 (0:1)
Humidity Relative humidity : 85±5% Test code C
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 120㫧2 㷄 Test Method 103 5 (0:1)
Pressurized Vapor Test humidity : 85±5% Test code E
Test duration : 96hr.
Environment Tests

5 Temperature Test Method 105 5 (0:1)

Cycle Test temp. : Low temp. -40㫧5 㷄

High temp. 125 㫧5 㷄

RT 5 ~ 35 㷄
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
6 Thermal Shock +0 Test Method 307 5 (0:1)
-5
Test temp. : High temp. 100 㷄 method 㸇
+5 Condition code A
-0
Low temp. 0 㷄
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles

MS5F6038 6
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 Reliability Test Items
Reference
Test Number Accept-
norms
cate- Test items Test methods and conditions of ance
EIAJ ED-4701
gories sample number
(Aug.-2001 edition)
1 High temperature Test Method 101 5 (0:1)
Reverse Bias Test temp. : Ta = 125㫧5 㷄
(Tj 㻡150 㷄)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
Tests

2 High temperature Test Method 101 5 (0:1)

Bias (for gate) Test temp. : Ta = 125㫧5 㷄
Endurance

(Tj 㻡150 㷄)
Tests

Bias Voltage : VC = VGE = +20V or -20V

Bias Method : Applied DC voltage to G-E
Endurance

VCE = 0V
Test duration : 1000hr.
3 Temperature Test Method 102 5 (0:1)
Humidity Bias Test temp. : 85㫧2 oC Condition code C
Relative humidity : 85㫧5%
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
4 Intermitted ON time : 2 sec. Test Method 106 5 (0:1)
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : 'Tj=100±5 deg
( for IGBT ) Tj 㻡150 㷄, Ta=25±5 㷄
Number of cycles : 15000 cycles

Failure Criteria

Item Characteristic Symbol Failure criteria Unit Note

Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 PA
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT 'VGE - USL×1.2 mV
resistance or 'VCE
FWD 'VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.

Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.

MS5F6038 7
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 Reliability Test Results

Test Reference Number

Number
cate- norms of
Test items of test
gorie EIAJ ED-4701 failure
sample
s (Aug.-2001 edition) sample
1 Terminal Strength Test Method 401 5 0
Mechanical Tests

(Pull test) Method㸇

2 Mounting Strength Test Method 402 5 0
method㸈
3 Vibration Test Method 403 5 0
Condition code B
4 Shock Test Method 404 5 0
Condition code B
1 High Temperature Storage Test Method 201 5 0

2 Low Temperature Storage Test Method 202 5 0

Environment Tests

3 Temperature Humidity Test Method 103 5 *

Storage Test code C
4 Unsaturated Test Method 103 5 0
Pressurized Vapor Test code E
5 Temperature Cycle Test Method 105 5 0

6 Thermal Shock Test Method 307 5 0

method 㸇
Condition code A
1 High temperature Reverse Bias Test Method 101 5 *
Endurance Tests

2 High temperature Bias Test Method 101 5 0

( for gate )
3 Temperature Humidity Bias Test Method 102 5 *
Condition code C
4 Intermitted Operating Life Test Method 106 5 0
(Power cycling)
( for IGBT )
* under confirmation

MS5F6038 8
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 Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip Tj=125oC / chip
1000 1000

VGE=20V 15V 12V VGE=20V 15V

800 800 12V
Collector current : Ic [ A ]

Collector current : Ic [A ]
600 600

10V 10V
400 400

200 200
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25oC / chip

1000 10

Tj=25oC
Collector-Emitter voltage : VCE [ V ]
800 8
Collector current : Ic [ A ]

Tj=125oC
600 6

400 4

200 Ic=800A
2
Ic=400A
Ic=200A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector-Emitter voltage : VCE [ V ] Gate-Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

o
VGE=0V, f=1MHz, Tj=25 C Vcc=600V, Ic=400A, Tj=25oC

100.0

Cies
Collector- Emitter voltage : VCE[ 200V/div ]

VGE
Capacitance : Cies, Coes, Cres [ nF ]

Gate-Emitter voltage : VGE [ 5V/div ]

10.0

Cres

Coes
VCE

1.0 0
0 10 20 30 0 500 1000 1500 2000 2500
Collector-Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]

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 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.5ȍ, Tj=25oC Vcc=600V, VGE=±15V, RG=1.5ȍ, Tj=125oC
10000 10000

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff ton
toff

ton tr
tr
100 100
tf
tf

10 10
0 200 400 600 800 0 200 400 600 800
Collector current : Ic [ A ] Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=400A, VGE=±15V, Tj=25oC Vcc=600V, VGE=±15V, RG=1.5ȍ

10000 70
Eoff(125oC)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

60

ton
toff 50
1000 Eoff(25oC)
40 Err(125oC)
Eon(125oC)
tr
30 Eon(25oC)
100
20 Err(25oC)
tf

10

10 0
0.1 1.0 10.0 100.0 0 100 200 300 400 500 600 700 800
Gate resistance : RG [ ȍ ] Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=400A, VGE=±15V, Tj=125oC +VGE=15V, -VGE <= 15V, RG >= 1.5ȍ, Tj <= 125oC

80 1000
Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

70
Eoff 800
60
Collector current : Ic [ A ]

50
600

40

30 400

20
Err 200
10

0 0
0.1 1.0 10.0 100.0 0 400 800 1200 1600
Gate resistance : RG [ ȍ ] Collector-Emitter voltage : VCE [ V ]

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 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, RG=1.5ȍ
1000 1000

Irr(125oC)
Tj=25oC Irr(25oC)

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
800
Forward current : IF [ A ]

Tj=125oC
600 trr(125oC)
trr(25oC)
100
400

200

0 10
0 1 2 3 4 0 200 400 600 800
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Transient thermal resistance (max.)

1.000
Thermal resistance : Rth(j-c) [ oC/W ]

FWD
0.100
IGBT

0.010

0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]

MS5F6038 11
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 Warnings

- This product shall be used within its absolute maximum rating (voltage, current, and temperature).䇭This product
may be broken in case of using beyond the ratings.
⵾ຠ䈱⛘ኻᦨᄢቯᩰ䋨㔚࿶䋬㔚ᵹ䋬᷷ᐲ╬䋩䈱▸࿐ౝ䈪ᓮ૶↪ਅ䈘䈇䇯⛘ኻᦨᄢቯᩰ䉕⿥䈋䈩૶↪䈜䉎䈫䇮⚛ሶ䈏⎕უ䈜䉎
႐ว䈏䈅䉍䉁䈜䇯
- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
ਁ৻䈱ਇᘦ䈱੐᡿䈪⚛ሶ䈏⎕უ䈚䈢႐ว䉕⠨ᘦ䈚䇮໡↪㔚Ḯ䈫ᧄ⵾ຠ䈱㑆䈮ㆡಾ䈭ኈ㊂䈱䊍䊠䊷䉵෶䈲䊑䊧䊷䉦䊷䉕ᔅ䈝
ઃ䈔䈩Ἣἴ䋬῜⊒䋬ᑧ὾╬䈱䋲ᰴ⎕უ䉕㒐䈇䈪䈒䈣䈘䈇䇯

- Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
⵾ຠ䈱૶↪ⅣႺ䉕චಽ䈮ᛠី䈚䇮⵾ຠ䈱ା㗬ᕈኼ๮䈏ḩ⿷䈪䈐䉎䈎ᬌ⸛䈱਄䇮ᧄ⵾ຠ䉕ㆡ↪䈚䈩ਅ䈘䈇䇯⵾ຠ䈱ା㗬ᕈኼ๮
䉕⿥䈋䈩૶↪䈚䈢႐ว䇮ⵝ⟎䈱⋡ᮡኼ๮䉋䉍೨䈮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯

- If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
㉄䊶᦭ᯏ‛䊶⣣㘩ᕈ䉧䉴䋨⎫ൻ᳓⚛䋬੝⎫㉄䉧䉴╬䋩䉕฽䉃ⅣႺਅ䈪૶↪䈘䉏䈢႐ว䇮⵾ຠᯏ⢻䊶ᄖⷰ╬䈱଻⸽䈲䈪䈐䉁䈞䉖䇯

- Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.
ᧄ⵾ຠ䈲䇮䊌䊪䊷䉰䉟䉪䊦ኼ๮䉦䊷䊑એਅ䈪૶↪ਅ䈘䈇㩿ᛛⴚ⾗ᢱ㪥㫆㪅㪑㩷㪤㪫㪌㪝㪈㪉㪐㪌㪐㪀䇯䊌䊪䊷䉰䉟䉪䊦⠴㊂䈮䈲䈖䈱㰱㪫㫁䈮䉋䉎
႐ว䈱ઁ䈮䇮㰱㪫㪺䈮䉋䉎႐ว䈏䈅䉍䉁䈜䇯䈖䉏䈲䉬䊷䉴᷷ᐲ㩿㪫㪺㪀䈱਄᣹ਅ㒠䈮䉋䉎ᾲ䉴䊃䊧䉴䈪䈅䉍䇮ᧄ⵾ຠ䉕䈗૶↪䈜䉎㓙
䈱᡼ᾲ⸳⸘䈮ଐሽ䈚䉁䈜䇯䉬䊷䉴᷷ᐲ䈱਄᣹ਅ㒠䈏㗫❥䈮⿠䈖䉎႐ว䈲䇮⵾ຠኼ๮䈮චಽ⇐ᗧ䈚䈩䈗૶↪ਅ䈘䈇䇯
- Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
ਥ┵ሶ෸䈶೙ᓮ┵ሶ䈮ᔕജ䉕ਈ䈋䈩ᄌᒻ䈘䈞䈭䈇䈪ਅ䈘䈇䇯䇭┵ሶ䈱ᄌᒻ䈮䉋䉍䇮ធ⸅ਇ⦟䈭䈬䉕ᒁ䈐⿠䈖䈜႐ว䈏䈅䉍䉁䈜䇯

- Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
಄ළ䊐䉞䊮䈲䊈䉳ข䉍ઃ䈔૏⟎㑆䈪ᐔမᐲ䉕100mm䈪100umએਅ䇮⴫㕙䈱☻䈘䈲10umએਅ䈮䈚䈩ਅ䈘䈇䇯䇭ㆊᄢ䈭ಲ෻䉍
䈏䈅䈦䈢䉍䈜䉎䈫ᧄ⵾ຠ䈏⛘✼⎕უ䉕⿠䈖䈚䇮㊀ᄢ੐᡿䈮⊒ዷ䈜䉎႐ว䈏䈅䉍䉁䈜䇯䉁䈢䇮ㆊᄢ䈭ಳ෻䉍䉇䉉䈏䉂╬䈏䈅䉎䈫䇮
ᧄ⵾ຠ䈫಄ළ䊐䉞䊮䈱㑆䈮ⓨ㓗䈏↢䈛䈩᡼ᾲ䈏ᖡ䈒䈭䉍䇮ᾲ⎕უ䈮❬䈏䉎䈖䈫䈏䈅䉍䉁䈜䇯

- In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
⚛ሶ䉕಄ළ䊐䉞䊮䈮ข䉍ઃ䈔䉎㓙䈮䈲䇮ᾲવዉ䉕⏕଻䈜䉎䈢䉄䈱䉮䊮䊌䉡䊮䊄╬䉕䈗૶↪䈒䈣䈘䈇䇯෶䇮ႣᏓ㊂䈏ਇ⿷䈚䈢䉍䇮
ႣᏓᣇᴺ䈏ਇㆡ䈣䈦䈢䉍䈜䉎䈫䇮䉮䊮䊌䉡䊮䊄䈏චಽ䈮⚛ሶో૕䈮ᐢ䈏䉌䈝䇮᡼ᾲᖡൻ䈮䉋䉎ᾲ⎕უ䈮❬䈏䉎੐䈏䈅䉍䉁䈜䇯
䉮䊮䊌䉡䊮䊄䉕ႣᏓ䈜䉎㓙䈮䈲䇮⵾ຠో㕙䈮䉮䊮䊌䉡䊮䊄䈏ᐢ䈏䈦䈩䈇䉎੐䉕⏕⹺䈚䈩䈒䈣䈘䈇䇯
㩿ታⵝ䈚䈢ᓟ䈮⚛ሶ䉕ข䉍䈲䈝䈜䈫䉮䊮䊌䉡䊮䊄䈱ᐢ䈏䉍ౕว䉕⏕⹺䈜䉎੐䈏಴᧪䉁䈜䇯㪀
- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
䉺䊷䊮䉥䊐㔚࿶䊶㔚ᵹ䈱േ૞゠〔䈏㪩㪙㪪㪦㪘઀᭽ౝ䈮䈅䉎䈖䈫䉕⏕⹺䈚䈩ਅ䈘䈇䇯㪩㪙㪪㪦㪘䈱▸࿐䉕⿥䈋䈩૶↪䈜䉎䈫⚛ሶ䈏⎕უ
䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯

- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
೙ᓮ┵ሶ䈮ㆊᄢ䈭㕒㔚᳇䈏ශട䈘䉏䈢႐ว䇮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯ข䉍ᛒ䈇ᤨ䈲㕒㔚᳇ኻ╷䉕ታᣉ䈚䈩ਅ䈘䈇䇯

MS5F6038 12
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 Warnings

- Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
⚛ሶ䉕ⵝ⟎䈮ታⵝ䈜䉎㓙䈮䇮ਥ┵ሶ䉇೙ᓮ┵ሶ䈮ㆊᄢ䈭ᔕജ䉕ਈ䈋䈭䈇䈪ਅ䈘䈇䇯┵ሶ᭴ㅧ䈏⎕უ䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯

- In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
ㅒ䊋䉟䉝䉴䉭䊷䊃㔚࿶㪄㪭㪞㪜䈏ਇ⿷䈚䉁䈜䈫⺋ὐᒐ䉕⿠䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕⿠䈖䈘䈭䈇ὑ䈮㪄㪭㪞㪜䈲චಽ䈭୯䈪
⸳ቯ䈚䈩ਅ䈘䈇䇯䇭䋨ផᅑ୯㩷㪑㩷㪄㪭㪞㪜㩷㪔㩷㪄㪈㪌㪭㪀
- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
䉺䊷䊮䉥䊮㩷㪻㫍㪆㪻㫋㩷䈏㜞䈇䈫ኻ᛫䉝䊷䊛䈱䌉䌇䌂䌔䈏⺋ὐᒐ䉕⿠䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕⿠䈖䈘䈭䈇ὑ䈱ᦨㆡ䈭䊄䊤䉟䊑
᧦ઙ䋨㪂㪭㪞㪜㪃㩷㪄㪭㪞㪜㪃㩷㪩㪞╬䋩䈪䈗૶↪ਅ䈘䈇䇯

- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
㪭㪚㪜㪪䉕⿥䈋䈢㔚࿶䈏ශട䈘䉏䈢႐ว䇮䉝䊋䊤䊮䉲䉢䉕⿠䈖䈚䈩⚛ሶ⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯㪭㪚㪜䈲ᔅ䈝⛘ኻቯᩰ䈱▸࿐ౝ
䈪䈗૶↪ਅ䈘䈇䇯

㪚㪸㫌㫋㫀㫆㫅㫊

- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷䈲⛘䈋䈝⵾ຠ䈱ຠ⾰䈫ା㗬ᕈ䈱ะ਄䈮ദ䉄䈩䈇䉁䈜䇯䈚䈎䈚䇮ඨዉ૕⵾ຠ䈲᡿㓚䈏⊒↢䈚䈢䉍䇮
⺋േ૞䈜䉎႐ว䈏䈅䉍䉁䈜䇯ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷⵾ඨዉ૕⵾ຠ䈱᡿㓚䉁䈢䈲⺋േ૞䈏䇮⚿ᨐ䈫䈚䈩ੱり੐᡿䊶Ἣἴ
╬䈮䉋䉎⽷↥䈮ኻ䈜䉎៊ኂ䉇␠ળ⊛䈭៊ኂ䉕⿠䈖䈘䈭䈇䉋䈉䈮౬㐳⸳⸘䊶ᑧ὾㒐ᱛ⸳⸘䊶⺋േ૞㒐ᱛ⸳⸘䈭䈬቟ో⏕଻
䈱䈢䉄䈱ᚻᲑ䉕⻠䈛䈩ਅ䈘䈇䇯
- The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
ᧄ઀᭽ᦠ䈮⸥タ䈚䈩䈅䉎ᔕ↪଀䈲䇮ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷⵾ຠ䉕૶↪䈚䈢ઍ⴫⊛䈭ᔕ↪଀䉕⺑᣿䈜䉎䉅䈱䈪䈅䉍䇮
ᧄ઀᭽ᦠ䈮䉋䈦䈩Ꮏᬺᚲ᦭ᮭ䇮䈠䈱ઁᮭ೑䈱ታᣉ䈮ኻ䈜䉎଻㓚䉁䈢䈲ታᣉᮭ䈱⸵⻌䉕ⴕ䈉䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯
- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,䇭please apply after confirmation
of this product to be satisfied about system construction and required reliability.
ᧄ઀᭽ᦠ䈮⸥タ䈘䉏䈢⵾ຠ䈲䇮ੱ๮䈮䈎䈎䉒䉎䉋䈉䈭⁁ᴫਅ䈪૶↪䈘䉏䉎ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈮↪䈇䉌䉏䉎䈖䈫䉕
⋡⊛䈫䈚䈩⸳⸘䊶⵾ㅧ䈘䉏䈢䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯ᧄ઀᭽ᦠ䈱⵾ຠ䉕ゞਔᯏེ䇮⦁⥾䇮⥶ⓨቝቮ䇮ක≮ᯏེ䇮ේሶജ
೙ᓮ䇮ᶏᐩਛ⛮ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈭䈬䇮․ᱶ↪ㅜ䈻䈱䈗೑↪䉕䈗ᬌ⸛䈱㓙䈲䇮䉲䉴䊁䊛᭴ᚑ෸䈶ⷐ᳞ຠ⾰䈮
ḩ⿷䈜䉎䈖䈫䉕䈗⏕⹺䈱਄䇮䈗೑↪ਅ䈘䈇䇯

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.

MS5F6038 13
13
*C