SHINDENGEN

VX-2 Series Power MOSFET N-Channel Enhancement type

2SK2185 OUTLINE DIMENSIONS

Case : FTO-220
(F5F50VX2) (Unit : mm)

500V5A

FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.

APPLICATION
Switching power supply of AC 100V input
High voltage power supply
Inverter

RATINGS
œAbsolute Maximum Ratings iTc = 25Žj
Item Symbol Conditions Ratings Unit
Storage Temperature T stg -55`150 Ž
Channel Temperature T ch 150
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCj ID 5
Continuous Drain CurrentiPeak) I DP 15 A
Continuous Source CurrentiDCj IS 5
Total Power Dissipation PT 30 W
Single Pulse Avalanche Current I AS T ch = 25Ž 5 A
Dielectric Strength u„‰“ Terminals to case, AC 1 minute 2 ‹u
Mounting Torque snq i Recommended torque : 0.3N¥m j 0.5 mE
VX-2 Series Power MOSFET 2SK2185 ( F5F50VX2 )

œElectrical Characteristics Tc = 25Ž

Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS I D = 1mA, VGS = 0V 500 V
Zero Gate Voltage Drain Current I DSS VDS = 500V, VGS = 0V 250 ÊA
Gate-Source Leakage Current I GSS VGS = }30V, VDS = 0V }0. 1
Forward Tran]conductance gfs I D = 2.5A, VDS = 10V 1. 5 3. 8 S
Static Drain-Source On-]tate Resistance RDS(ON) I D = 2.5A, VGS = 10V 1. 1 1. 5 ¶
Gate Threshold Voltage VTH I D = 1mA, VDS = 10V 2. 5 3. 0 3. 5 V
Source-Drain Diode Forwade Voltage VSD I S = 2.5A, VGS = 0V 1. 5
The\mal Resistance Æjc junction to case 4. 17 Ž/L
Total Gate Charge Qg VDD = 400V, VGS = 10V, I D = 5A 21 nC
Input Capacitance Ciss 580
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 45 pF
Output Capacitance C oss 140
Turn-On Time ton I D = 2.5A, VGS = 10V, RL = 60¶ 55 90 ns
Turn-Off Time toff 110 170
 2SK2185 Transfer Characteristics
10
Tc = −55°C 25°C

8
100°C
Drain Current ID [A]

150°C
6

2
VDS = 25V
pulse test
TYP
0
0 5 10 15 20

Gate-Source Voltage VGS [V]

 2SK2185 Static Drain-Source On-state Resistance
10
Static Drain-Source On-state Resistance RDS(ON) [Ω]

ID = 2.5A

VGS = 10V
pulse test
TYP
0.1
-50 0 50 100 150
Case Temperature Tc [°C]
 2SK2185 Gate Threshold Voltage
5

4
Gate Threshold Voltage VTH [V]

VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150

Case Temperature Tc [°C]

 2SK2185 Safe Operating Area
100

10

100µs
Drain Current ID [A]

200µs

1
R DS(ON) 1ms
limit

10ms

0.1

DC

Tc = 25°C
Single Pulse

0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
 2SK2185 Transient Thermal Impedance

100

10

0.1

Transient Thermal Impedance θjc(t) [°C/W]

0.01
10-5 10-4 10-3 10-2 10-1 100 101 102

Time t [s]
 2SK2185 Capacitance

1000

Ciss
Capacitance Ciss Coss Crss [pF]

100
Coss

Crss

Tc=25°C
TYP
10
0 20 40 60 80 100

Drain-Source Voltage VDS [V]

 2SK2185 Power Derating
100

80
Power Derating [%]

60

40

20

0
0 50 100 150
Case Temperature Tc [°C]
 2SK2185 Gate Charge Characteristics
500 20

400
Drain-Source Voltage VDS [V]

Gate-Source Voltage VGS [V]

15
VDD = 400V
200V
300
100V

VDS 10

200 VGS

5
100

ID = 5A
0 0
0 10 20 30 40 50

Gate Charge Qg [nC]