THYRISTOR MODULE

PK(PD,PE)90FG （M）
UL;E76102
Power Thyristor/Diode Module PK90FG series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy. 92．
０
2０．
０ 2０．
０ 2０．
０ １７．
５
２-φ6．
０

５ 3．5
● IT(AV) 90A, IT(RMS) 140A, ITSM 2300A

K２G２
０
０
２５．
１２．

5 ７．
K G
● di/dt100A/μs Internal Configurations

３．
● dv/dt 1000V/μs
M５×1０
２．
８ 4-＃１１０TAB
（Applications） K2

０
４．
G2 K2
3 2 1 G2

０
MAX ２９．
Various rectifiers A1K2 （K2） K1 G1
（A2） 3 2 1

０
５
１．
．
A1K2 （K2） K1
（A2）

３０±０
５
１９．

５
６．
NAME PLATE
AC/DC motor drives PK PE
Heater controls ８０．
０±０．
２
K2
Light dimmers 3 2 1
（K2） K1 G1
（A2）
Static switches A1K2

PD Unit：A

■Maximum Ratings （Tj＝25℃ unless otherwise specified）

Ratings
Symbol Item PK90FG40 PK90FG80 PK90FG120 PK90FG160 Unit
PD90FG40 PD90FG80 PD90FG120 PD90FG160
PE90FG40 PE90FG80 PE90FG120 PE90FG160
VRRM ＊Repetitive Peak Reverse Voltage 400 800 1200 1600 V
VRSM ＊Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V
VDRM ＊Repetitive Peak off-state Voltage 400 800 1200 1600 V

Symbol Item Conditions Ratings Unit

IT（AV） ＊Average On-state Current Single phase, half wave, 180°conduction, Tc＝82℃ 90 A
IT（RMS） ＊R.M.S. On-state Current Single phase, half wave, 180°conduction, Tc＝82℃ 140 A
ITSM ＊Surge On-state Current 1
／2 Cycle, 50/60HZ, Peak Value, non-repetitive 2100/2300 A
It
2
＊I t2
Value for one cycle surge current 22040 A2S
PGM Peak Gate Power Dissipation 10 W
PG（AV） Average Gate Power Dissipation 1 W
IFGM Peak Gate Current 3 A
VFGM Peak Gate Voltage (Forward) 10 V
VRGM Peak Gate Voltage (Reverse) 5 V
di/dt Critical Rate of Rise of On-state Current di G /dt＝0.1A/μs
VD＝1／2VDRM，
IG＝100mA， 100 A/μs
VISO ＊Isolation Breakdown Voltage（R.M.S.） A.C. 1minute 2500 V
Tj ＊Operating Junction Temperature −40 to ＋125 ℃
Tstg ＊Storage Temperature −40 to ＋125 ℃
Mounting Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･m
Torque Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） （㎏f･B）
Mass Typical Value 170 g

■Electrical Characteristics （Tj＝25℃ unless otherwise specified）

Symbol Item Conditions Ratings Unit
IDRM Repetitive Peak off-state Current,max Tj＝125℃，VD＝VDRM 25 mA
IRRM ＊Repetitive Peak Reverse Current,max Tj＝125℃，VD＝VDRM 25 mA
VTM ＊On-state Voltage,max IT＝270A 1.6 V
IGT Gate Trigger Current,max VD＝6V，IT＝1A 50 mA
VGT Gate Trigger Voltage,max VD＝6V，IT＝1A 3 V
VGD Gate Non-Trigger Voltage,min Tj＝125℃，VD＝1／2VDRM 0.25 V
dv/dt Critical Rate of Rise of off-state Voltage,min Tj＝125℃，VD＝2／3VDRM 1000 V/μs
Rth（j-c）＊Thermal Impedance,max Junction to case 0.30 ℃/W
＊mark：Thyristor and Diode part. No mark：Thyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
 PK(PD,PE)90FG

Gate Characteristics On-State Voltage max

１００ １０００
５０
５００

On-State Current（A）
２０
Gate Voltage（V）

VFGM（10V）
１０ PG
（
M
10 ２００
W
５ ）
１００
PG（

IFGM（３A）
２ AV
Ｔｊ=２５℃
２５℃ ）
（１
１ W ５０ Maximum
）

０．
５
２０
０．
２ VGD

０．
１ １０
１０ ２０ ５０ １００ ２００ ５００ １０００ ２０００ ５０００１００００ ０．
５ 1．
０ １．
５ ２．
０ ２．
５
Gate Current（mA） On-State Voltage（V）

Surge On-State Current Rating

Transient Thermal Impedance θj-c（℃/W）

（Non-Repetitive） Transient Thermal Impedance
２５００ ０.３５
Surge On-State Current（A）

０.３
２０００
Per One Element
０.２５

１５００ ０.２

６０HZ
０.１５
１０００
５０HZ ０.１ Junction to Case
Per One Element
５００
Ｔ
ｊ=２５℃ start ０.０５

０ ０
１ ２ ５ １０ ２０ ５０ １００ ０．
００１０．
００２ ０．
００５０．
０１０．
０２ ０．
０５０．
１ ０．
２ ０．
５ １ ２ ５ １０
Time（cycles） Time t（sec）