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    Samuel Celin
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    DIODO ZENER

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    DIODO ZENER

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    6 views6 pages

    1N5819

    Uploaded by

    Samuel Celin
    DIODO ZENER

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 6
    MOTOROLA SEMICONDUCTOR TECHNICAL DATA (Order this document bby 1NS817/0 Axial Lead Rectifiers ‘employing the Schottky Barriar principle in a large area metal-to-slicon power diode. State-of-the-art geometry features chrome barrier metal, ‘epitaxial construction with oxide passivation and metal overlap contact. Ideally Suited for use as rectifiers in low-voltage, high-frequency inverters, free ‘wheeling diodes, and polarity protection diodes. + Extremely Low ve + Low Stored Charge, Majority Cartier Conduction + Low Powor Loss/High Eficionoy Mechanical Characteristics + Case: Epoxy, Molded ‘+ Weight: 0.4 gram (approximately) + Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Soiderable + Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16" from case + Shipped in plastic bags, 1000 per bag, + Available Tape and Resled, 5000 per reel, by adding a “RL” suffix to the part number + Polarity: Cathode Indicated by Polarity Band 1N5817 1N5818 1N5819 SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS + Marking: 1N5817, 1N5618, 1N5819 CASE 58-04 MAXIMUM RATINGS Rating Symbol] INSBIT | INSET | INSETD | Unit oak Repoive Reverse Volage Van | 2 | 3 | 0 |v \Workng Peak Reverse Votage vawn 1G Blocking vitage YR Nan-Rapoiive Peak Reverse Voliage Vasu | 2% [| | RS Reverse Vaage vee |_| | "Average Rectfed Forward Curent (2) ry To ‘Requ) $02 VatGe), TL = 90°C Raia = 60°C, PC Board Mounting, soe Note 2, Ta = §5°C) Ambient Temperature Rated Va(@0), Pray 0, Rasa = 80°C) m™ | ® [@ | Nan-Rapoiive Peak Surge Curent Trsm for one cycle) x (Surge applied at ated ioad conditions, ha-wav sinole phase 60 He, TL= 70) ‘Operating and Siomage Juncion Tenpereure Range (Reverse Valageapoted) | Ty Taig ~a5 te 195 oak Operating Junction Temperate (Forward Ourent eppled) ay 150 ‘THERMAL CHARACTERISTICS (2) Characteristic Symbot Max Unit Thermal Resstance, Junaton to AMBIent Raia oo “ow ELECTRICAL CHARACTERISTICS (7, = 25°0 unless otherwise noted) @) Characteristic Symbot_| 4NSBI7 | INBGT | INBETD | Unit Maximum Instantaneous Forward Volage (7) vA we [oz [os | om |v 108) os | oss | 06 504) a7 | 087 | 09 ‘asaiam istantaneaus Roverse Current @ Rated dé Vokeg® (I) | a0 | 10 | 10 | ma so | wo | 2 {()/ Pulse Test Pulse Wiath = 200 rs, Daly Oyele = 20% (2) Lead Temperature refronce fs cathode load 1/32" from case. Preteregcoces are tools recommends noes or hare use anaes ver vain Revd "Netra, ne 1008 @& MOTOROLA 4NS817 1N5818 1N5819 NOTE 1 — DETERMINING MAXIMUM RATINGS Reverse power esspton an the possibilty hema runaway smist be consderes wen operating ths rect t overs vologes Shove 0 Vans Proper deren may be accomolanes ty use ot Saunton TR wero Aran Taman “Taomex)—RalaPF(aV)—ReyaPRaw) (1) Hamm alowadle ambient temperate Maximum allowable juncton temperature (125°C or the lemperature at which thermal Tunaway cecurs whichever utes!) Pray) = Average forward power dssination PRuAv) = Average reverse power dsspation FRaJA = Junction-to-ambent ermal resistence Figures 1:2. and 3 permit easier use of equation (1 by taking re- verse power disioation and thermal runaway nfo consideration ‘The ‘igure solve fora reference temperature as determined by equation 2 Tre= Tuan) ~RauaPRUAV) 2 Substuting equation (2) nto equation 1) yo: Twimax)* TR FAIAPFOAY) e Inspection of equations 2) and (3) reveals that TR isthe ambient {omparature a which thermal runaway occurs or where Ty = 125°C, ‘wen forward power zero. The transition trom one Boundary cond ‘tonto the other is evident on the curves of Figures 1, 2, and 3.88 @ difference ntherateofchange ofthe slope nthe very of 15°C. The dlaot Figures 1,2, and3isbased upende conditions. For useincom- ‘mon ecifer exci, Tablo indicates suggest factors for an oguiv- ‘lon de voltage to use for conservative design, thats Vvoqui = Vinge) F o “ThefactorFis derived by considering the preparties ofthe vancusrec- ‘ther crcuts an the reverse charactenstics of Schottky doces EXAMPLE Find Ta(max)for N58 18 operatedina 12-voltdesupoly using abndgecircut wim capaciivetitersuenthatipy Tig REFERENCE TEMPERATURE ¢ ‘REFERENCE TEMPERATURE C) 8 % B — SS P= Gy eo 2 30 40 50 70 1 70 va DGREVERSE VOLTAGE VOLTS) Figure 1. Maximum Reference Temperature 1NS817 05), euayleay) = 10, Input Voriaga = 10 Vrms) Raga = 80°C "30 40 50° 70 10 5 0 284 ey) 0 on = OM Vp, OC REVERSE VOLTAGE VOLS) # 1 Find Vvaquy, Resa 285 Ta Figure 2. Maximum Reference Temperature stop 2.Find Ta MSeGlres Rous R= eee “NSBI8 Gig" 92 Vend Raya “ecw Sip 3. Find Beg em Pate reed yay) =05W EH = 50 ana gay) =08 e ai Can FAV) E as jl Stop 4. Find Tamas om eauaon (2) 8 ‘Taimen) = 109 (60) (05) = 69°C. B cc K & "Raia Pow = M0} “vats qven ae forte INSET Powers sant lowerformne A 1N5B17 because of ts lower forward voltage, and higher for the FE ao aN5e19, 3 x o 2 N) 5 a os p, OC REVERSE VOLINE (LTS) Figure 9. Maximum Reference Temperature ‘NSB1 Table 4. Values for Factor F Creut Hatt Weve Full Wave, Bdge Fu wave, Contr Topped't Load Resistive | Capacitver | Resistive Capacitive Resistive [Capacitive Sno Wave as 13 05, as 10 13 Sauro wave | _o75 15 075 075 is 7s a 2 Reciier Devoe Data Bo op 2 & |_| com tenns roreman 5 ae EQUAL LENGTH 2 fn 2 ga 8 2 stunt 7 3 20 g rca 5 Zo oo § 2 oh + £ 0 é fer Ww wae M7810 3 LL LEAD LENGTH (NCHS) Figure 4, Steady-State Thermal Resistance 3 10 Bor 5 os go 2 02 Ba 2 oo: 5 0 E ow Bow 2 om Sr ste ao 80 . we ts IFyavp AVERAGE FORWARD CURREN 1N5817 1NS5818 1NS819 6 ‘SQUARE WAVE TJs 18 08 10 20 a (aur) Figure 5. Forward Power Dissipation Za) Za - 1N5817—19 mW Te arc Oey FE pl fy Bhstan The ‘seisersnaticere 10) 200 Figure 6. Thermal Response NOTE 2— MOUNTING DATA Data shown fr thermal resistance juncton-1o-ambiont (Raya) for themountings shown s tobe used as typical guideline values forpre- liminary engineering. orn case the tie point temperature cannat be measured TYPICAL VALUES FOR Roya IN STILL AIR ‘Mounting Method 1 PC Board with TD 2" copper surface. be LY Mounting Lead Length, L (in) Method [we [ve [02 | a | Riva 1 2 |e | 2 | os z 7 [0 | s7 | 3 Ed wee Mounting Method 2 oO 10 20k Bk Ok Mounting Method 3 PC. Board with 12 x14 copper surtaco. aI BOARD GROUND PLANE Rectifier Davice Data 4NS817 1N5818 1N5819 NOTE 3— THERMAL CIRCUIT MODEL (For heat conduction through the leads) Tua Use ofthe above model permits uncon tolesdthermalresistance (Subscripts Aand K refer to anode and cathode sides, respectively for any mounting configuration to be found. For a given teal lead Values for thermal resistance companents are lenatn, lowest valuos occur won one sido oftho rectifier is brought Raq = 100°C Win typicaly and 120°C/Win maximum 28 close as possible te tho heatsink. Terms in tho moda sony. Ray = 36°C typcaly and 46°C maar Ta=Ambiont Tomperature Tc = Case Temperature Th= Lead Tempersture Ty = Junchon Temperature Rag = Thermal Resistance, Heatsink to Ambient Ray = Thoma Rosisianco, Lead to Heatsink Raj= Thermal Resistance, Junction fo Case PD = Power Dissipation a S g 10} 3 od x tre lord 3 2 ad 3 2 B [ ctmeroneta 8 od BT eossesstonass 5 Io ao 3030 100 0 0 2d NUMBER OF CYC 5 Figure 8 Maximum Non-Repetive Surge Curent 3 og g aoe Zz 0 = 2 = 2a £ ie oy 5 oar g os & oa} ANSBIT 5 od : 01 02 03 04 05 e 09 10 14 aE vp INSTANTANEOUS FORWARD VOLTAGE (VOLTS) o 40 80 12 16 MM BR HO Vie REVERSE VOLTA (CLS) Figure 7. Typical Forward Voltage Figure 9. Typical Reverse Current 4 Rectifier Device Data NOTE 4 — HIGH FREQUENCY OPERATION ‘Since curtent now in a Schotk recites eresult otmajonty car fer conduction ts no subject junction diode forward and reverse re ‘covery transients due to minority cate injection and stored charge. Stistactory Grout analysis work may oe perfomes by using a model consisting ofan ideal diode n parallelwithavariabiecapactance (See Figure 10, Rocificaton officiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform Fectiteatoneticency is approximately 7opercentat2 0MHZ,@.. Ine Fato of de power to RMS power n the load is 0.28 at hes frequency, ‘wnereas perfect rectfcation would yield 0.406 for sine wave inputs However, n contrast to ordinary junction diedes, the lossin waveform ficiency isnot ndicave of powerless: itis senply a result of reverse currentflow through ne diode capactance, which lowers the de output voltage C.CAPAGTANCE 1N5817 1NS5818 1NS819 200 e * a se ie a vitals val 08 060810 20 49 608070 7% Vi REVERSE VOLIAGE(VOKTS) Figure 10. Typical Capacitance Rectifier Device Data 3 1N5817 1N5818 1N5819 PACKAGE DIMENSIONS Pa ° i ‘ea DDAUETER NOT COMTGLED UTNE CASE 59-04 ISSUE M Vcio‘i reserves De rato rake cranges witout ther nates o any pros ere, Motorola rakes no warranty, represertaton or gurareeregarang ‘he suatity of epoca or any paren purpose nor does ore msime any ity ring of he appeaton or use ot any grade! or exciton Spusealy dsclars ay and altobiy ncdngltea tain consequartalerndentl damages. Typeal Farmers ics may be prowdedin ator

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