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Datasheet
Features
• Very small conduction losses
• Negligible switching losses
• Low forward voltage drop
• Surface mount miniature packages
• Avalanche capability specified
• ECOPACK2 compliant
Applications
• Lighting
• Battery charger
• DC / DC converter
• Notebook adapter
• Switching diode
Description
Single Schottky rectifiers designed for high frequency miniature switched mode
power supplies such as adaptors and on board DC/DC converters.
Packaged in SMA, SMA Flat Notch or SMB, the STPS160 is ideal for use in parallel
with MOSFETs in synchronous and low voltage secondary rectification.
Product status
STPS160
Product summary
Symbol Value
IF(AV) 1A
VRRM 60 V
T j(max.) 150 °C
VF(typ.) 0.49 V
1 Characteristics
SMA TL = 130 °C
IF(AV) Average forward current, δ = 0.5, square wave 1 A
SMA Flat Notch, SMB TL = 135 °C
SMA, SMB 75
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal A
SMA Flat Notch 100
PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 180 W
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
SMA 30
Rth(j-l) Junction to lead SMA Flat Notch 20 °C/W
SMB 23
Tj = 25 °C - 4 µA
IR(1) Reverse leakage current VR = VRRM
Tj = 125 °C - 1.1 4 mA
Tj = 25 °C - 0.67
IF = 1 A
Tj = 125 °C - 0.49 0.57
VF(2) Forward voltage drop V
Tj = 25 °C - 0.8
IF = 2 A
Tj = 125 °C - 0.58 0.65
Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current temperature (δ = 0.5)
0.5
δ= 1 SM A
Rth(j-a) =100°C/W
0.8 S(CU)=1.5cm2
0.4
SM B
0.6 Rth(j-a) = 80 °C/ W
0.3 S(CU)=1.5cm2
0.4
0.2 T
T
0.1 0.2
IF(AV)(A) δ =tp/T tp Tamb (°C)
δ=tp/T tp
0.0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150
0.9
0.8
0.7
0.1
0.6
0.5
0.4
0.3
0.01
0.2
Figure 5. Relative variation of thermal impedance junction Figure 6. Reverse leakage current versus reverse voltage
to ambient versus pulse duration (SMA) applied (typical values)
0.9 Tj =100°C
0.8
1E+2
0.7 Tj =75°C
0.6
0.5 1E+1
0.4
0.3
1E+0
Tj =25°C
0.2
Figure 7. Junction capacitance versus reverse voltage Figure 8. Forward voltage drop versus forward current
applied (typical values) (maximum values)
C (pF) IFM(A)
200 1E+1
F=1MHz
Tj =25°C
Tj =125°C
100
1E+0 Tj =25°C
50
1E-1
20
Figure 9. Thermal resistance junction to ambient versus Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (SMB) copper surface under each lead (SMA)
150 150
100 100
50 50
S(Cu)(cm²) S(Cu)(cm²)
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 11. Thermal resistance junction to ambient versus copper surface under each lead (SMA Flat
Notch)
Rth(j-a) (°C/W)
200
Epoxy printed circuit board FR4, copper thickness: 35 µm
SMA Flat Notch
150
100
50
S(Cu)(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
E1
A1
C A2
L b
Dimensions
1.64
(0.065)
5.43
(0.214)
Dimensions
1.52
(0.060)
5.52
(0.217)
E1
A1
C A2
L b
Dimensions
2.18
(0.086)
5.84
(0.230)
3 Ordering Information
Revision history