Basic Electronic Devices and Circuits

EEE 2201

Md. Sahabuddin
Assistant professor
Dept. of Biomedical Engineering (BME)
Jashore University of Science and Technology (JUST)
References:
 Electronic Devices and Circuit Theory
Robert L. Boylestad
Louis Nashelsky
 Principles of Electronics
V.K. Mehta
Rohit Mehta
 A Text Book of Electrical Technology Volume IV
B.L Theraja
A.K Theraja
 Microelectronic Circuts
Sedra and Smith
 Op – Amps and Linear Integrated Circuits
Ramakant A. Gayakward
P-N Junction Diode
• It is a two-terminal device consisting of a P-N junction formed either
in Ge or Si crystal.
• The semiconductor diode is formed by simply bringing the n- and p-type materials together
(constructed from the same base—Ge or Si).
• At the instant the two materials are “joined” the electrons and holes in the region of the junction
will combine, resulting in a lack of carriers in the region near the junction.
• This region of uncovered positive and negative ions is called the depletion region due to the
depletion of carriers in this region.
Biasing:
• Since the diode is a two-terminal device, the application of a voltage across its terminals leaves
three possibilities: no bias (VD = 0 V), forward bias (VD > 0 V), and reverse bias (VD < 0 V).

No Applied Bias (VD = 0 V):

 In the absence of an applied bias voltage, the net flow of charge in any one direction for a
semiconductor diode is zero.

For details see the reference books

Reverse-Bias Condition (VD <0 V):
 External potential of V volts is applied across the p-n junction such that the positive terminal is connected to
the n-type material and the negative terminal is connected to the p-type material.

 Widening of the depletion region.

 This widening of the depletion region will establish too great a barrier for the majority carriers to overcome,
effectively reducing the majority carrier flow to zero.

 The current that exists under reverse-bias conditions is called the reverse saturation current and is represented
by Is.
Forward-Bias Condition (VD >0 V):

 A semiconductor diode is forward-biased when the association p-type and positive and n-type and negative
has been established.
Applications
The main applications of semiconductor diodes in modern electronic circuitry are as under :
1. As power or rectifier diodes. They convert ac current into dc current for dc power supplies of electronic
circuits.

2. As signal diodes in communication circuits for modulation and demodulation of small signals.

3. As Zener diodes in voltage stabilizing circuits.

4. As varactor diodes–for use in voltage-controlled tuning circuits as may be found in radio and TV receivers.
For this purpose, the diode is deliberately made to have a certain range of junction capacitance. The
capacitance of the reverse-biased diode is given by C = K/√ VR
where VR is the reverse voltage.

5. In logic circuits used in computers.

Zener Region

 There is a point where the application of too negative a voltage will result in a sharp change in the
characteristics. The current increases at a very rapid rate in a direction opposite to that of the positive
voltage region. The reverse-bias potential that results in this dramatic change in characteristics is called
the Zener potential and is given the symbol VZ.
 The maximum reverse-bias potential that can be applied before entering the Zener region is
called the peak inverse voltage (referred to simply as the PIV rating) or the peak reverse voltage
(denoted by PRV rating).

DIODE EQUIVALENT CIRCUITS:

 An equivalent circuit is a combination of elements properly chosen to best represent the actual terminal
characteristics of a device, system, or such in a particular operating region.
The Ideal Diode:
 The ideal diode, therefore, is a short circuit for the region of conduction.
 The ideal diode, therefore, is an open circuit in the region of non-conduction.
SERIES DIODE CONFIGURATIONS WITH DC INPUTS
PARALLEL AND SERIES–PARALLEL CONFIGURATIONS
Fixed Vi, Variable RL
• To determine the minimum load resistance that will turn the Zener diode on, simply calculate the value of RL
that will result in a load voltage VL = VZ.That is,
Fixed Vi, Variable RL
Assignment