JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO.
9, SEPTEMBER 2007
FDTD Analysis of Two-Photon Absorption
and Free-Carrier Absorption in
Si High-Index-Contrast Waveguides
Nobuo Suzuki
Abstract—The two-photon absorption (TPA), the free-carrier
absorption (FCA), and the carrier plasma effect play important
roles in Si-based photonic devices. These effects have been incorpo-
rated directly into a finite-difference time-domain (FDTD) simula-
tor for the first time. To check the validity of the FDTD simulator,
it has been applied to the simulation of nonlinear transmission
of an ultrashort optical pulse in a short Si high-index-contrast
waveguide. The results are consistent with those shown in the
literature. The cause of the slight negative slope transmission has
been explained as follows. Since the TPA-induced FCA makes
the pulse-shape asymmetric, a pulse with a higher optical input
intensity tends to have a longer tail. Therefore, a stronger optical
pulse is subject to FCA for a longer period, resulting in the
negative differential transmission.
Index Terms—Finite-difference time-domain (FDTD) methods,
nonlinear optics, optical pulses, optical waveguides, silicon.
I. I NTRODUCTION
I N RECENT years, Si photonics has attracted a great deal
of attention as a CMOS-compatible platform technology
for optical communication and optical interconnection [1]–[6].
Strong light confinement in a submicrometer-size Si high-
index-contrast (HIC) waveguide (or photonic-wire waveguide)
allows small radius bending without loss and high-density
integration of photonic devices. Many types of compact passive
components, such as arrayed-waveguide gratings, multimode-
interference (MMI) couplers, lattice filters, and microring res-
onators have been demonstrated. New kinds of Si-based lasers,
optical amplifiers, optical modulators, optical switches, and
photodiodes have been investigated extensively.
A small cross section of Si HIC waveguides leads to a high
optical intensity, which causes optical nonlinearities such as
the two-photon absorption (TPA), Kerr effect, the TPA-induced
free-carrier absorption (FCA), and the carrier plasma effect.
For example, optical-limiter behavior with spectral broadening
[7]–[11] was reported for ultrashort optical pulses in Si-based
waveguides. Rieger et al. [7] and Cowan et al. [8] observed even
a slight negative differential transmittance. The nonlinearity can
be applied to all-optical switches and wavelength converters
[12]–[18]. On the other hand, the nonlinear absorption and
the wavelength mixing limit the maximum input optical power
Manuscript received January 11, 2007; revised May 9, 2007.
The author is with the Corporate R&D Center, Toshiba Corporation,
Kawasaki 212-8582, Japan (e-mail: nob.suzuki@toshiba.co.jp).
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/JLT.2007.903298
0733-8724/$25.00 © 2007 IEEE
2495
and the maximum wavelength channels in a passive optical
circuit for wavelength-division multiplexed (WDM) applica-
tions. Therefore, adequate attention should be given to these
nonlinearities in designing photonic devices utilizing Si HIC
technology.
The optical nonlinearities in Si waveguides have been an-
alyzed extensively by nonlinear equations for the pulse en-
velope or coupled-mode equations [7], [10]–[13], [15]–[22].
The optical-limiting behavior in a long (> 1 mm) Si HIC
waveguide was shown to be predominantly caused by TPA [10],
[11]. In a shorter (< 1 mm) waveguide with higher saturation
intensity, on the other hand, it was shown that both TPA and
TPA-induced FCA contribute to the saturation [7], [8]. The
negative differential transmittance has been observed only in
the latter case. Although the negative slope was reproduced
by calculation, utilizing a nonlinear equation for the pulse
envelope [7], the physical origin has not been clearly explained
[7], [8]. The effects of TPA-induced FCA on the ultrashort
optical pulses have also been discussed in [12] and [16].
Such an approach is useful for analyzing optical nonlinearity
in a single waveguide. When the optical nonlinearity in a more
complicated photonic device, such as a microring resonator and
an MMI coupler, is concerned, however, simulation utilizing the
finite-difference time-domain (FDTD) is more versatile. The
FDTD can deal with optical nonlinearities [23]–[28], such as
χ(2) , χ(3) , Kerr effect, and Raman nonlinearity, as well as the
various material models described by multilevel-rate equations
or Bloch equations [28]–[34]. TPA may be included in the
FDTD as a part of χ(3) . To the best of the author’s knowledge,
however, FCA has not yet been incorporated directly into the
FDTD simulator.
In this paper, TPA, FCA, and the carrier plasma effect have
been incorporated into the FDTD simulator for Si photonics
applications. In Section II, a simple algorithm to include the
nonlinear absorptions in FDTD is proposed. To check the
validity of the FDTD simulator, it is applied to the calculation
of nonlinear optical-pulse propagation in a Si HIC waveguide in
Section III. The results were consistent with those in the litera-
ture [7], [8]. The cause of the negative differential transmission
observed in short Si HIC waveguides has been clarified.
II. C ALCULATION M ODEL
A. Basic Procedure of Conventional FDTD
Here, we consider isotropic materials with relative perme-
ability µ = 1. In FDTD, the magnetic field H is defined at
2496 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 9, SEPTEMBER 2007

t = (n + 1/2)∆t, whereas the electric field E, the electric susceptibility can be derived as
displacement D, and the polarization P are defined at t = n∆t.
One calculation time step of the FDTD consists of the following (n+1/2) 2τKerr − ∆t (n−1/2) 2ε2 ∆t
χKerr = χKerr + |E (n) |2
two procedures. 2τKerr + ∆t 2τKerr + ∆t
1) First, H (n+1/2) is calculated from H (n−1/2) and E (n) , (8a)
and then, D (n+1) is calculated from H (n+1/2) and D (n) , (n+3/2)
χKerr
(n+1/2)
+ χKerr
(n+1)
utilizing the Maxwell equations χKerr =
2
2τKerr ε2 ∆t
∂H ∂D = χ(n+1/2) + |E (n+1) |2
−µ0 = ∇ × E, =∇×H (1) 2τKerr + ∆t 2τKerr + ∆t
∂t ∂t
(8b)
where µ0 is the permeability of the vacuum.
2) Then, E (n+1) is calculated from D (n+1) and P (n+1) , where χKerr is defined at t = (n + 1/2)∆t, whereas χKerr
utilizing the constitutive equation is defined at t = n∆t. When τKerr is sufficiently small, the
change in refractive index due to the Kerr effect is given by [26]
and [27]
D = ε0 E + P (2)
∆n = n2 |E|2 = n2 I (9)
where ε0 is the permittivity of the vacuum. Many kinds
of polarization models can be utilized depending on where the optical intensity I is expressed as
the medium. As an example, we consider, here, the c0 ε0 n0
nondispersive polarization ε0 χ∞ E, Lorentz dispersion I= |E|2 (10)
2
P L , Drude dispersion P D , Raman nonlinearity P R =
ε0 χR E, and Kerr effect P Kerr = ε0 χKerr E and the relation between ε2 and the Kerr coefficients n2
and n2 is
P = ε0 χ∞ E + P L + P D + P R + P Kerr . (3)
ε2 = 2n0 n2 = c0 ε0 n20 n2 . (11)

(n+1) The electric field and the Kerr susceptibility can be easily
In the time domain, the Lorentz polarization PL , the
(n+1) calculated from the known variables by iteration, utilizing the
Drude polarization PD , and the Raman susceptibility following equation [23], [25]–[27]:
(n+1)
χR can be calculated from the known variables utilizing
[27], [28]  (n+1)
D
E (n+1)
=

(n+1) (n+1)
∂ 2 PL ∂PL ε 0 1 + χ∞ + χ R + χKerr (E (n+1) )
2
+ γL + ωL2 PL = ε0 χL ωL2 E (4) (12)
∂t ∂t
where
∂ 2 PD ∂PD
− γD 2
= ε0 ω P E (5)  (n+1)
(n+1) (n+1)
∂t2 ∂t D = D(n+1) − PL − PD . (13)

∂ 2 χR ∂χR
+ γR 2
+ ωR 2
χR = ε R ω R |E|2 (6)
∂t2 ∂t B. Polarizations Due to Carrier Effects in Si

where χL , γL , and ωL are the susceptibility, the damping rate, Here, we add the polarizations due to the carrier plasma
and the resonant angular frequency, respectively, of the Lorentz effect, the background absorption, FCA, and TPA to (3) for
model; γD and ωp are the damping rate and the plasma angular Si photonics applications
frequency, respectively, of the Drude model; and εR , γR , and
ωR are the permittivity, the damping factor, and the resonant P = ε0 χ∞ E + P L + P D + P R + P Kerr
angular frequency, respectively, of the Raman model. + P plsm + P bg + P FCA + P TPA . (14)
The Kerr susceptibility χKerr satisfies [24], [28]
Change in the optical intensity due to TPA is represented by
∂χKerr χKerr 1
+ = ε2 |E|2 (7) dI
∂t τKerr τKerr = −βTPA I 2 (15)
dz
where ε2 is the Kerr permittivity, and τKerr is the response where βTPA is the TPA coefficient. As in the case of the
time. From (7), the difference equations to update the Kerr Kerr effect, the nonlinear polarization due to TPA can be written
SUZUKI: FDTD ANALYSIS OF TPA AND FCA IN Si HIGH-INDEX-CONTRAST WAVEGUIDES 2497

as P TPA = ε0 χTPA E, where The refractive-index change due to the plasma effect in Si is
given by [35]
c0 n0 βTPA c2 ε0 n20 βTPA
χTPA = i I=− 0 |E|2 (16) 
ω 2iω ∆nPlasma = −8.8 × 10−22 Ne
is the nonlinear susceptibility due to TPA. With the substitution 
(n+1)
− 8.5 × 10−18 Nh0.8 (λ/1.55)2 (23)
of iω by −∂/∂t, the time-domain equation to update χTPA
can be derived as where the units of the carrier densities and the wavelength λ are
c20 ε0 n20 βTPA ∆t (n+1/2) 2 in inverse cubic centimeter and in micrometers, respectively.
(n+1) (n)
χTPA = χTPA − |E |
2
∼ (n) c2 ε0 n20 βTPA ∆t C. Inclusion of Carrier Effects in FDTD
= χTPA − 0
4 Now, (2) can be rewritten as


× |E (n+1) |2 + |E (n) |2 . (17)  
D= PL + PD + ε0 E ε∞ + χR + χKerr + 2n0 ∆nplsm
(n+1)
Since χTPA depends on the unknown variable |E (n+1) |2 , L

(n+1)
iteration is required to determine χTPA and E (n+1) self- c0 n0 (α0 + σFCA Nf ) c20 ε0 n20 βTPA
− − |E| .
2
(24)
consistently. iω 2iω
Change in the free carrier density Nf caused by TPA can be
expressed by the following rate equation: In mediums without absorption, the electric field can be calcu-
  lated by (12). In the absorptive medium, however, it is difficult
dNf 1 dI Nf to solve (24) directly because of iω in the denominator. To
= − −
dt 2
ω dz τr cope with this difficulty, the author proposes to utilize the time
differential form of (24). Upon multiplying iω and substituting
βTPA 2 Nf
= I − iω by −∂/∂t, (24) yields
2
ω τr
c20 ε20 n20 βTPA Nf ∂D  ∂PL ∂PD ∂E ∂(χR E)
= |E|4 − (18) = + + ε0 ε∞ + ε0
8
ω τr ∂t ∂t ∂t ∂t ∂t
L

where τr is the carrier lifetime. The difference equation corre- ∂(χKerr E) ∂ (∆nplasma (Nf )E)
+ ε0 + 2ε0 n0
sponding to (18) is ∂t ∂t
c20 ε20 n20 βTPA
2τr − ∆t (n−1/2) + c0 ε0 n0 [α0 + σFCA Nf ]E + |E|2 E.
Nf
(n+1/2)
= N 2
2τr + ∆t f (25)
τr ∆t c20 ε20 n20 βTPA (n) 4
+ |E | . (19) From (25), we can establish the resulting difference equation to
2τr + ∆t 4
ω update E (n+1) as
(n+1/2)
Note that Nf can be calculated from the known variable,  
E (n) . Here, the electron density Ne and the hole density Nh are (n+1) g2 (E (n+1) ) (n) D (n+1) − D (n)
E = E + (26)
identical to Nf , for simplicity. If necessary, however, we can g1 (E (n+1) ) ε0 g1 (E (n+1) )
deal with Ne and Nh independently. Upon replacing (18) and
(19) by a proper carrier model (injection or gate control), we where
can apply this model for the simulation of optical modulators. (n+1) (n+1)
The free carriers generated by TPA cause the FCA, which is g1 (E (n+1) ) = ε∞ + χR + χKerr (E (n+1) )
represented by + 2n0 ∆nplasma (E (n+1) )


(n+1/2)
dI c0 n0 α0 + σFCA Nf ∆t
= −[σFCAe Ne + σFCAh Nh ]I = −σFCA Nf I (20) +
dz 2 
where σFCAe and σFCAh are the cross sections for free-electron c20 ε0 n20 βTPA ∆t |E (n+1) |2 + |E (n) |2
+
absorption and for free-hole absorption, respectively. The polar- 8
ization due to FCA is expressed as (27a)
(n) (n)
g2 (E (n+1) ) = ε∞ + χR + χKerr + 2n0 ∆nplasma (E (n) )
c0 ε0 n0 σFCA Nf

PFCA = iε0 εiFCA E = − E. (21) c0 n0 α0 + σFCA Nf
(n+1/2)
∆t
iω
−
The free carriers also cause a refractive-index change, 2 
∆nplasma (Nf ). The relevant polarization is expressed as c20 ε0 n20 βTPA ∆t |E (n+1) |2 + |E (n) |2
− .
8
PPlasma = ε0 εrPlasma E = ε0 2n0 ∆nPlasma (Nf )E. (22) (27b)
2498 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 9, SEPTEMBER 2007

Fig. 1. Assumed waveguide structure and electric-field amplitude |Ey | of an

optical pulse (Iin = 56 pJ) at 400 fs after the pulse-peak incidence. Calculation
region is surrounded by PML. The vertical axis is enlarged by ten times.

Equation (26) can be easily solved by iteration, just as in the

case of (12). The maximum iteration cycle was six in the 2-D
calculation described in the next section.

III. S IMULATION OF S UBPICOSECOND O PTICAL -P ULSE

P ROPAGATION IN Si HIC W AVEGUIDE Fig. 2. Calculated output pulse energy from the waveguide as functions of
the input pulse energy. The optical-limiting behavior with a slight negative
A. Calculation differential transmission is evident.

To check the validity of the FDTD simulator, it was applied

to the simulation of the short optical-pulse propagation in a
Si HIC waveguide, which is the most straightforward appli-
cation and has been extensively analyzed, utilizing nonlinear
equations for the pulse envelope [7], [10]–[13], [15]–[22]. Here,
we consider a short waveguide, where the negative differential
transmittance was observed [7], [8]. Following Cowan et al.
[8], the Si HIC waveguide (200 nm(h) × 425 nm(w)) was
assumed to be formed on a SiO2 layer and surrounded by air.
The wavelength and the pulsewidth of the Gaussian optical
pulse (TE mode) were assumed to be λ = 1.49 µm and 200 fs
(full-width at half maximum), respectively. The refractive index
of Si was assumed to be 3.481 at λ = 1.49 µm. For 2-D
calculation, this structure was reduced to a slab waveguide
shown in Fig. 1, consisting of Si core layer (neff = 3.039)
sandwiched by the air and SiO2 (n = 1.5). The calculation
region (1.6 µm × 100.4 µm) was terminated by Gedney’s
perfectly matched layer (PML) [36]. The mesh size and the
time step of the FDTD were assumed to be 40 nm and 80 as,
respectively. The calculation was carried out with a standard
personal computer.
The Kerr coefficient and the TPA coefficient of Si were
reported to be n2 = 4.3–14.5 × 10−18 m2 /W and βTPA =
0.4–0.9 cm/GW, respectively [7], [9], [10], [14], [37], [38].
The values assumed in this calculation were n2 = 7 ×
10−18 m2 /W (ε2 = 1.72 × 10−19 m2 /V2 ), τKerr = 0, βTPA =
0.9 cm/GW, and τr = 0.8 ns. The FCA cross sections of Si are
given by [35]
σFCAe = 8.5 × 10−18 [cm2 ] × (λ/1.55)2
σFCAh = 6.0 × 10−18 [cm2 ] × (λ/1.55)2
where the unit of λ is in micrometers. The refractive-index
change due to the carrier plasma effect was calculated by
(23). Since the waveguide is rather short, dispersion can be
ignored [10].
B. Results and Discussions
Fig. 2 shows the calculated output pulse energy from the
waveguide as functions of the input pulse energy. The output
Fig. 3. Comparison of the transmittances for a 50-µm Si HIC waveguide
calculated with and without including FCA and the carrier plasma effect.
The optical-limiting characteristic appears only when FCA is taken into
consideration.
pulse energy becomes almost constant for higher input inten-
sity, and a slight negative differential transmission is evident.
In the case of the 100-µm waveguide, the output pulse energy
(Iout ) was saturated at around 5 pJ when the input pulse energy
(Iin ) surpasses 15 pJ, corresponding to the peak intensity of
about 80 GW/cm2 (∼15 pJ/200 fs/0.09 µm2 ). The saturation
intensity is smaller for a longer waveguide.
Fig. 3 compares the transmittance of a Si HIC waveguide
(L = 50 µm) when FCA and/or the carrier plasma effect were
ignored. The optical-limiter characteristic appears only when
(28a) both TPA and FCA are considered as described in [7] and [8].
(28b) The carrier plasma effect makes a minor contribution to
the transmittance. Fig. 4 shows the waveform change in the
waveguide for Iin = 29 pJ with (solid lines) and without
(dashed lines) FCA. Two characteristics of FCA are evident:
1) the pulse height decreases rapidly near the input edge of the
waveguide and 2) since the latter part of the pulse is absorbed
by FCA, the pulse-peak position is advanced. Fig. 5 shows
the input-pulse-energy dependence of the calculated power
spectra at L = 50 µm. By increasing the input pulse energy,
spectra are broadened, multipeaked, and blue-shifted due to the
plasma effect. When the plasma effect is not taken into account,
SUZUKI: FDTD ANALYSIS OF TPA AND FCA IN Si HIGH-INDEX-CONTRAST WAVEGUIDES
Fig. 4. Impact of FCA on the transmitted pulse waveform. The solid and
dotted curves show the waveforms calculated with and without including FCA.
The input pulse energy was 29 pJ. The latter part of the pulse is absorbed by
FCA, which is remarkable near the input edge of the waveguide. The pulse-peak
position is advanced due to FCA.
Fig. 5. Input-pulse-energy dependence of the calculated power spectra for
a 50-µm Si HIC waveguide. Each spectrum was normalized at the peak. By
increasing the input pulse energy, spectra are broadened, multipeaked, and
blue-shifted.
Fig. 6. Spatial distribution of carriers after the pulse has passed for Iin =
9.8, 19, 29, and 56 pJ. Near the input edge, the free carrier density is higher
for stronger optical input. The carrier density far from the input edge, however,
tends to be independent of the input pulse energy.
the spectra are single-peaked and the center wavelength does
not shift. These characteristics are consistent with the experi-
mental and calculated results reported in the literature [7]–[22].
Now, let us consider the cause of the negative differential
transmittance, which has not been explained clearly in the
previous work [7], [8]. Fig. 6 shows the input-pulse-energy
dependence of the carrier distribution along the center of the
waveguide after the pulse was passed. According to (18), the
2499
Fig. 7. Temporal changes of optical power P and carrier density Nf at L =
80 µm. The dashed lines and the solid lines denote Iin = 29 pJ and Iin =
56 pJ, respectively. Although the pulse energy and the carrier density become
independent of the input pulse energy as the pulse propagates farther, the pulse-
peak position and the rise timing of Nf are advanced for higher Iin . A pulse
with higher Iin has a longer tail and suffers from FCA for a longer period.
The pulse energy (Iout = 6.6 pJ) for Iin = 56 pJ is slightly smaller than that
(Iout = 6.7 pJ) for Iin = 29 pJ, in spite of a higher peak intensity.
carrier density generated by the TPA at the input edge is in
2
proportion to Iin , and hence, a stronger pulse is subject to
stronger absorption due to both TPA and FCA. Therefore,
the pulse energy and the carrier density that is far from the
input edge tend to be independent of the input pulse energy.
However, the pulse shape is not identical. The pulse shape and
the carrier density at L = 80 µm are compared in Fig. 7 for
Iin = 29 pJ (dashed lines) and Iin = 56 pJ (solid lines). Since
the carrier lifetime (τr ) is much longer than the pulsewidth,
the carrier density increases in proportion to the time integral
of the pulse waveform as pointed out by Boyraz et al. [12].
Since the influence of TPA that near the input edge is much
stronger for a pulse with a higher Iin , the peak shift to the
front edge is larger, and the influence of FCA begins earlier
for higher Iin . Therefore, the pulse with a higher Iin tends to
have a longer tail and is subject to FCA for a longer period
even after the traveling pulse energy and the carrier density
become almost independent of the input pulse energy. This
causes a slight negative differential transmittance. In the case
of Fig. 7, the pulse energy (Iout = 6.6 pJ) for Iin = 56 pJ is
slightly smaller than that (Iout = 6.7 pJ) for Iin = 29 pJ, in
spite of a higher peak intensity. Fig. 8(a) and (b) shows the
pulsewidth dependence of the input–output characteristics in
terms of the pulse energy and the peak pulse intensity at the
mode peak, respectively, for a 50-µm Si HIC waveguide. The
negative slope is evident only in the plot for the pulse energy.
Thus, the waveform change caused by TPA-induced FCA in the
waveguide is responsible for the negative slope. The pulsewidth
dependence in Fig. 8(b) is weaker than that in Fig. 8(a), because
TPA depends on the intensity, not on the pulse energy. A smaller
saturation intensity for a longer pulse is attributed to a longer
interaction time with FCA.
IV. C ONCLUSION
A simple approach to include nondispersive absorption in
the FDTD calculation was proposed. With this algorithm, TPA,
2500
Fig. 8. Pulsewidth dependence of the input–output characteristics for a 50-µm
Si HIC waveguide. (a) Relation between the input and output pulse energies.
(b) Relation between peak intensities of the input and output pulses at the mode
peak. The dotted, solid, and dot-dashed lines represent the input pulsewidths of
100, 200, and 400 fs, respectively. The negative slope is evident only in the plot
for the pulse energy.
FCA, and the carrier plasma effect, which are very important
for Si photonics applications, were incorporated into an FDTD
simulator. To check the validity of the simulator, it was applied
to the nonlinear propagation of ultrashort optical pulses in a
short Si HIC waveguide, which has already been extensively
studied by other groups. The calculated results were consistent
with those shown in the literature. The mechanism of the nega-
tive slope transmission reported in [7] and [8] was explained as
follows. Because of TPA and the TPA-induced FCA, pulse-peak
shift to the front edge is enhanced for higher input intensity.
Therefore, a stronger optical pulse tends to have a longer tail
and is subject to FCA for a longer period, which leads to the
negative differential transmission.
Such an analysis can be carried out also by utilizing non-
linear equations for the pulse envelope. However, it is difficult
to apply such equations to analyze 2-D photonic functional
devices, such as a microring resonator and an MMI coupler.
This FDTD simulator is applicable to such functional devices
with an arbitrary geometry. It can be extended to the simulation
of optical modulators and switches if it is combined with
an additional model to deal with the injection current or the
gate-controlled carriers. Three-dimensional simulation will be
possible if a high-performance computing system is utilized.
In order to simulate a longer waveguide, a 1-D version will be
utilized.
JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 9, SEPTEMBER 2007
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Nobuo Suzuki was born in Kanagawa Prefecture, Japan, in January 1956. He
received the B.E., M.E., and Ph.D. degrees in electronic engineering from the
University of Tokyo, Tokyo, in 1978, 1980, and 1983, respectively.
Since 1983, he has been with the Research and Development Center, Toshiba
Corporation, Kawasaki, where he has been engaged in research on semicon-
ductor optoelectronic devices (OEICs, InGaAs/InGaAsP/InP avalanche photo-
diodes, high-speed strained multiquantum-well semiconductor lasers, tunable
semiconductor lasers, electroabsorption modulators, and ultrafast all-optical
switches utilizing intersubband transition in GaN/AlN MQWs) for optical
communication systems. From 2002 to 2003, he was a Guest Professor at
the Research Center for Integrated Quantum Electronics, Hokkaido University,
Sapporo. His present interests are semiconductor-integrated optoelectronic
devices, optical interconnects, and Si photonics and their modeling.
Dr. Suzuki is a member of the Institute of Electronics, Information, and
Communication Engineers and the Japan Society of Applied Physics.