Date of Experiment: 27/09/2022 Lab_Report

Date of Submission: 02/10/2022

INDIAN INSTITUTE OF TECHNOLOGY

ROORKEE

ECN-242(SEMICONDUCTOR DEVICES)

FET+BJT Terminal Characteristics Measurement

Submitted By:
Yawalkar Ajinkya Ganpati 21116108
Vrinda Garg 21116107

Submitted To: Profs.

Tanmoy Pramanik
Avirup Dasgupta
Department of Elect. Comm. Engineering

Aim : To study Drain Characteristics and Transfer Characteristics of a Field Effect

Transistor (FET) and to determine the parameters like threshold voltage, subthreshold slope
and mutual transconductance.

Apparatus : B2900A SMU with an intuitive GUI and free PC based application software,
comprises two DC Regulated Power Supplies 0-15 VDC/150 mA & 0- 3V DC/150 mA, three
round metres for voltage & current measurement, FET BFW10 mounted behind the panel.

Formulae Used : For n channel(NMOS) mosfet (with p-type substrate)

𝑉𝑑 = 𝑉 𝑝 + 𝑉 𝑔 (𝑉𝑝 is the pinch off voltage)
𝑉𝑑,𝑠𝑎𝑡 = 𝑉𝑔 − 𝑉𝑡 (𝑉𝑡 is the threshold voltage)
Date of Experiment: 27/09/2022 Lab_Report
Date of Submission: 02/10/2022

In non saturation region,

𝜕𝐼𝐷 𝑊𝜇𝑛𝐶𝑜𝑥
𝑔𝑚 = 𝜕𝑉𝑑
= 2𝐿
𝑉𝑑 (where, 𝑔𝑚 is the mutual transconductance)
In saturation region,
𝜕𝐼𝐷 𝑊𝜇𝑛𝐶𝑜𝑥
𝑔𝑚 = 𝜕𝑉𝑑
= 2𝐿
(𝑉𝑔 − 𝑉𝑡)

Drain current in non saturation(ohmic / linear ) region

(where 𝑉𝑑 < 𝑉𝑔 − 𝑉 ) is given by,
𝑡
𝑊𝜇𝑛𝐶𝑜𝑥 2
𝐼𝑑 = 2𝐿
[2(𝑉𝑔 − 𝑉𝑡)𝑉𝑑 − 𝑉𝑑 ] (w, L is the channel width and length respectively;
𝜇𝑛is the electron mobility; 𝐶𝑜𝑥 is the oxide capacitance)

Drain current in saturation region(where 𝑉𝑑 >= 𝑉𝑔 − 𝑉 ) is given by,

𝑡
𝑊𝜇𝑛𝐶𝑜𝑥 2
𝐼𝑑 = 2𝐿
[(𝑉𝑔 − 𝑉𝑡) ]
𝑑(𝑙𝑜𝑔10𝐼𝑑𝑠) −1
Subthreshold slope(SS) is given by, 𝑆𝑆 = [ 𝑑𝑉𝑔𝑠
]

Assumptions :
1. The current in the channel is due to drift rather than diffusion.
2. There is no current through the gate oxide.
3. A gradual channel approximation is used in which
This approximation means that Ex is essentially a constant.
4. Any fixed oxide charge is an equivalent charge density at the oxide–
semiconductor interface.
5. The carrier mobility in the channel is constant

Theory :
1. FETs are unipolar transistors as they involve single-carrier-type operation. In FET the
input impedance is very high compared to BJT. This very high input impedance
makes them very sensitive to input voltage signals.
2. FET is a three-terminal device with the important feature that the current through two
terminals can be controlled by small changes we make in the current or voltage at the
third terminal. This control feature allows us to amplify small a-c signals or to switch
the device from an on state to an off state and back. These two operations,
amplification and switching.
3. Transconductance is an expression of the performance of a bipolar transistor or
field-effect transistor (FET). In general, the larger the transconductance figure for a
device, the greater the gain(amplification) it is capable of delivering, when all other
factors are held constant.
Date of Experiment: 27/09/2022 Lab_Report
Date of Submission: 02/10/2022

4. The steeper subthreshold slope permits a lower Vt for the same off-current, which in
turn allows the devices to be used at lower supply voltages thereby attracting attention
for low power operation. However, the nearly ideal subthreshold slope (60
mV/decade) occurs only in long-channel devices.
5. The transconductance is a function of the geometry of the device as well as of carrier
mobility and threshold voltage. The transconductance increases as the width of the
device increases, and it also increases as the channel length and oxide thick-ness
decrease.

Subthreshold Characteristics :

The drain current, which exists for VGS VT, is known as the subthreshold current.
𝑉 −𝑉𝑑
𝐼𝑑(𝑠𝑢𝑏) ∝ 𝑒𝑥𝑝( 𝑉 𝑔 ) . [1 − 𝑒𝑥𝑝( 𝑉𝑡ℎ
)]
𝑡ℎ

When drain voltage is more than a few 𝑘𝑇/𝑞 then drain current is independent
of 𝑉𝑑.
The subthreshold current may add significantly to power dissipation in a large-scale
integrated circuit.

Graphs :

1. Transfer characteristics are obtained between the drain current (𝐼𝑑) and gate to source
voltage (𝑉𝑔𝑠) ,taking drain to source voltage (𝑉𝑑𝑠) as the constant parameter.
Date of Experiment: 27/09/2022 Lab_Report
Date of Submission: 02/10/2022

2. Drain(output) characteristics are obtained between the drain current (𝐼𝑑) and drain to
source voltage (𝑉𝑑𝑠) ,taking gate to source voltage (𝑉𝑔𝑠) as the constant parameter.

3. Subthreshold characteristics are obtained between the drain current(𝐼𝑑) in log10 scale
and gate to source voltage (𝑉𝑔𝑠).
Date of Experiment: 27/09/2022 Lab_Report
Date of Submission: 02/10/2022

Calculations :
1. Threshold Voltage, 𝑉𝑡 = 3. 86 𝑉 (from graph 1, extension of curve in linear
region cuts the x-axis which gives 𝑉𝑡ℎ𝑟𝑒𝑠ℎ𝑜𝑙𝑑)
−3
2. Mutual transconductance, 𝑔𝑚 = 0. 468 * 10 𝑆𝑖𝑒𝑚𝑒𝑛𝑠 (in linear region)
−5
and in saturation region, 𝑔𝑚 = 2 * 10 𝑆𝑖𝑒𝑚𝑒𝑛𝑠
3. Subthreshold slope, 𝑆𝑆 = 𝑇ℎ𝑟𝑒𝑠ℎ𝑜𝑙𝑑 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 * 𝐷𝐼𝐵𝐿 𝑐𝑜𝑒𝑓𝑓𝑖𝑐𝑖𝑒𝑛𝑡 * 𝑙𝑛(10)
= 0. 888
−1
(DIBL coefficient is generally of the order of 10 )

Precautions:
1. While performing the experiment do not exceed the ratings of the FET. This may lead
to damage of FET.
2. Connect voltmeter and ammeter with correct polarities as shown in the circuit
diagram.
3. Do not switch ON the power supply unless the circuit connections are checked as per
the circuit diagram.
4. Properly identify the Source, Drain and Gate terminals of the transistor.