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MITSUBISHI THYRISTOR MODULES

TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE

TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H

• IT (AV) Average on-state current .......... 400A


• VRRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
• VDRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
• DOUBLE ARMS
• Insulated Type

(DZ Type)

APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

(DZ)
K2
CR1 G2
A1 A2
A1 K1 K2 A2 K1 K2
CR2 K1
G1
G2 K2
60
50
36
16

26
36

(CZ)
G1 K1

K2
CR1 G2
3–φ6.5
A1 A2
24 24 24 24 K1 K2
4–M8 CR2 K1
23 35 44 35 26 G1
80±0.2 80±0.2
180 (PZ)
K2
CR1 G2
K1 K2
Tab#110, t=0.5 A1 A2
CR2 K1
9

G1
50
36

LABEL
(UZ)
9

K2
CR1 G2
A1 A2
(DZ Type) K1 K2
CR2 K1
G1

(Bold line is connective bar.)

Feb.1999
MITSUBISHI THYRISTOR MODULES

TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS


Voltage class
Symbol Parameter Unit
M H 24 2H
VRRM Repetitive peak reverse voltage 400 800 1200 1600 V
VRSM Non-repetitive peak reverse voltage 480 960 1350 1700 V
VR (DC) DC reverse voltage 320 640 960 1280 V
VDRM Repetitive peak off-state voltage 400 800 1200 1600 V
VDSM Non-repetitive peak off-state voltage 480 960 1350 1700 V
VD (DC) DC off-state voltage 320 640 960 1280 V

Symbol Parameter Conditions Ratings Unit


IT (RMS) RMS on-state current 620 A
IT (AV) Average on-state current Single-phase, half-wave 180° conduction, TC=66°C 400 A
ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 8000 A
I2t I2t for fusing Value for one cycle of surge current 2.7 × 105 A2s
di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 200 A/µs
PGM Peak gate power dissipation 10 W
PG (AV) Average gate power dissipation 3.0 W
VFGM Peak gate forward voltage 10 V
VRGM Peak gate reverse voltage 5.0 V
IFGM Peak gate forward current 4.0 A
Tj Junction temperature –40~+125 °C
Tstg Storage temperature –40~+125 °C
Viso Isolation voltage Charged part to case 2500 V
8.83~10.8 N·m
Main terminal screw M8
90~110 kg·cm
— Mounting torque
1.96~3.92 N·m
Mounting screw M6
20~40 kg·cm
— Weight Typical value 1100 g

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 60 mA
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 60 mA
VTM On-state voltage Tj=125°C, ITM=1200A, instantaneous meas. — — 1.4 V
dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs
VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 3.0 V
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V
IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA
Rth (j-c) Thermal resistance Junction to case, per 1/2 module — — 0.1 °C/ W
Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied, per 1/2 module — — 0.05 °C/ W

Measured with a 500V megohmmeter between main terminal 10 — —


— Insulation resistance MΩ
and case

Feb.1999
MITSUBISHI THYRISTOR MODULES

TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE

PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
10 4 10000
7 Tj=125°C
5
3

SURGE (NON-REPETITIVE)
8000
ON-STATE CURRENT (A)

ON-STATE CURRENT (A)


2
10 3
7 6000
5
3
2
4000
10 2
7
5 2000
3
2
10 1 0
0.6 1.0 1.4 1.8 2.2 2.6 1 2 3 5 7 10 20 30 50 70100

ON-STATE VOLTAGE (V) CONDUCTION TIME


(CYCLES AT 60Hz)

GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL


IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
4 0.10
3
TRANSIENT THERMAL IMPEDANCE

2 VFGM=10V
PGM=10W
10 1 0.08
7 VGT=3.0V
GATE VOLTAGE (V)

5
3 0.06
2 PG(AV)=
(°C/W)

Tj=25°C 3.0W
10 0
7 0.04
5 IGT=
100mA
3
2
0.02
10 –1 VGD=0.25V IFGM=4.0A
7
5 0
410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0
GATE CURRENT (mA) TIME (s)

MAXIMUM AVERAGE ON-STATE LIMITING VALUE OF THE AVERAGE


POWER DISSIPATION ON-STATE CURRENT
(SINGLE PHASE HALFWAVE) (SINGLE PHASE HALFWAVE)
500 130
120°
θ 120
θ
AVERAGE ON-STATE POWER

90°
CASE TEMPERATURE (°C)

400 180°
360° 110 360°
60°
DISSIPATION (W)

RESISTIVE, RESISTIVE,
300 INDUCTIVE 100 INDUCTIVE
LOAD θ=30° LOAD
90
200 80 PER SINGLE
ELEMENT
70
100 PER SINGLE
ELEMENT θ=30° 60° 90° 120° 180°
60

0 50
0 50 100 150 200 250 300 350 400 0 100 200 300 400
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

Feb.1999
MITSUBISHI THYRISTOR MODULES

TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE

MAXIMUM AVERAGE ON-STATE LIMITING VALUE OF THE AVERAGE


POWER DISSIPATION ON-STATE CURRENT
(RECTANGULAR WAVE) (RECTANGULAR WAVE)
800 130
270° DC PER SINGLE
180° 120 ELEMENT
AVERAGE ON-STATE POWER

120° θ

CASE TEMPERATURE (°C)


60° 90°
600 θ=30° 110 360°
DISSIPATION (W)

RESISTIVE,
100 INDUCTIVE
LOAD
400 90

θ 80

200 360° 70
RESISTIVE, DC
PER SINGLE INDUCTIVE 60
ELEMENT LOAD θ=30° 60° 90° 120° 180°
270°
0 50
0 200 400 600 0 200 400 600
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

Feb.1999

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