MITSUBISHI IGBT MODULES

CM200DY-24NF
HIGH POWER SWITCHING USE

CM200DY-24NF

¡IC ................................................................... 200A

¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack

APPLICATION
General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Tc measured point (Base plate)

108
93±0.25 4

3-M6 NUTS

G2
6
48 ±0.25

E2
62

30
15

E1
6

C2E1 E2 C1
G1

21.5 25 25 24

4-φ6.5 MOUNTING HOLES

18 7 18 7 18 TAB #110 t=0.5
14 14 14
E2 G2
8.5

C2E1 E2 C1
–0.5
30 +1.0

22.2

LABEL
G1 E1

CIRCUIT DIAGRAM

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM200DY-24NF
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short ±20 V
IC DC, TC’ = 112°C*3 200 A
Collector current
ICM Pulse (Note 2) 400 A
IE (Note 1) 200 A
Emitter current
IEM (Note 1) Pulse (Note 2) 400 A
PC (Note 3) Maximum collector dissipation TC = 25°C 1130 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Main terminals M6 screw 3.5 ~ 4.5 N•m
Torque strength
— Mounting M6 screw 3.5 ~ 4.5 N•m
— Weight Typical value 400 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 6 7 8 V

IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 µA

Tj = 25°C — 1.8 2.5
VCE(sat) Collector-emitter saturation voltage IC = 200A, VGE = 15V V
Tj = 125°C — 2.0 —
Cies Input capacitance — — 47 nF
VCE = 10V
Coes Output capacitance — — 4 nF
VGE = 0V
Cres Reverse transfer capacitance — — 0.9 nF
QG Total gate charge VCC = 600V, IC = 200A, VGE = 15V — 1350 — nC
td(on) Turn-on delay time — — 500 ns
tr Turn-on rise time VCC = 600V, IC = 200A — — 150 ns
td(off) Turn-off delay time VGE = ±15V — — 600 ns
tf Turn-off fall time RG = 1.6Ω, Inductive load — — 350 ns
trr (Note 1) Reverse recovery time IE = 200A — — 250 ns
Qrr (Note 1) Reverse recovery charge — 7.5 — µC
VEC(Note 1) Emitter-collector voltage IE = 200A, VGE = 0V — — 3.2 V
Rth(j-c)Q IGBT part (1/2 module) — — 0.11 K/W
Thermal resistance*1
Rth(j-c)R FWDi part (1/2 module) — — 0.19 K/W
Rth(c-f) Contact thermal resistance Case to heat sink, Thermal compound Applied*2 (1/2 module) — 0.04 — K/W
Rth(j-c’)Q Thermal resistance Case temperature measured point is just under the chips — — 0.066*3 K/W
RG External gate resistance 1.6 — 16 Ω
*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM200DY-24NF
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
400 4

SATURATION VOLTAGE VCE (sat) (V)

VGE = 15 Tj = 25°C VGE = 15V
20V
COLLECTOR CURRENT IC (A)

350
13

COLLECTOR-EMITTER
300 12 3

250 11

200 2

150

100 10 1

50 Tj = 25°C
9 Tj = 125°C
0 0
0 2 4 6 8 10 0 50 100 150 200 250 300 350 400

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7
5
EMITTER CURRENT IE (A)

8
COLLECTOR-EMITTER

3
2
6
102
7
4
IC = 200A 5
IC = 400A
3
2
2 Tj = 25°C
IC = 80A Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 1 2 3 4 5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7 7 tf
CAPACITANCE Cies, Coes, Cres (nF)

5 5 td(on)
Cies
3 3
td(off)
SWITCHING TIME (ns)

2 2

101 102
7 7
5 5 tr
3 Coes 3
2 2
Conditions:
100 101 VCC = 600V
7 7
5 Cres 5 VGE = ±15V
3 3 RG = 1.6Ω
2 2 Tj = 125°C
VGE = 0V Inductive load
10–1 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM200DY-24NF
HIGH POWER SWITCHING USE

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part & FWDi part)
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 100
REVERSE RECOVERY TIME trr (ns)

7 7

THERMAL IMPEDANCE Zth (j–c)

5 Single Pulse

NORMALIZED TRANSIENT
5
3 TC = 25°C
2
3
2 10–1 10–1
7 7
5 5
102 3 3
trr
7 2 2
Irr Conditions: IGBT part:
5 10–2 Per unit base = 10–2
VCC = 600V
7 7
3 VGE = ±15V 5 Rth(j–c) = 0.11K/W 5
RG = 1.6Ω FWDi part:
2 3 3
Tj = 25°C 2
Per unit base = 2
Inductive load Rth(j–c) = 0.19K/W
101 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TIME (s)

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 200A
GATE-EMITTER VOLTAGE VGE (V)

VCC = 400V
16

VCC = 600V
12

0
0 400 800 1200 1600 2000
200 600 1000 1400 1800
GATE CHARGE QG (nC)

Feb. 2009