MITSUBISHI IGBT MODULES

CM200DU-12F
HIGH POWER SWITCHING USE

CM200DU-12F

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¡IC ................................................................... 200A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack

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APPLICATION
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General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

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Tc measured point
94
7 80 ±0.25 2–φ6.5
17 23 23 MOUNTING HOLES 4
R
4 11
CM

C2E1 E2 C1
E2 G2
24

18
13
48

24

24
t 27

G1E1

4
No

12 13.5
3–M5NUTS
12mm deep
E2 G2

TAB #110. t=0.5

16 2.5 25 2.5 16 RTC
7.5

C2E1 E2 C1
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RTC
G1 E1
30 –0.5
+1

21.2

LABEL CIRCUIT DIAGRAM

Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-12F
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 600 V
VGES Gate-emitter voltage C-E Short ±20 V
IC TC = 25°C 200 A

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Collector current
ICM Pulse (Note 2) 400 A
IE (Note 1) TC = 25°C 200 A
Emitter current
IEM (Note 1) Pulse (Note 2) 400 A
PC (Note 3) Maximum collector dissipation TC = 25°C 590 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Charged part to base plate, AC 1 min. 2500 V

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Main Terminal M5 2.5 ~ 3.5 N•m
— Torque strength

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Mounting holes M6 3.5 ~ 4.5 N•m
— Weight Typical value 310 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Limits
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Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V

IGES Gate leakage current VGE = VCES, VCE = 0V — — 20 µA

Tj = 25°C — 1.6 2.2
VCE(sat) Collector-emitter saturation voltage IC = 200A, VGE = 15V V
Tj = 125°C — 1.6 —
Cies Input capacitance — — 54 nF
VCE = 10V
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Coes Output capacitance — — 3.6 nF

VGE = 0V
Cres Reverse transfer capacitance — — 2.0 nF
QG Total gate charge VCC = 300V, IC = 200A, VGE = 15V — 1240 — nC
td(on) Turn-on delay time — — 120 ns
tr Turn-on rise time VCC = 300V, IC = 200A — — 100 ns
td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 350 ns
R

tf Turn-off fall time RG = 3.1Ω, Inductive load switching operation — — 250 ns

trr (Note 1) Reverse recovery time IE = 200A — — 150 ns
Qrr (Note 1) Reverse recovery charge — 3.8 — µC
VEC(Note 1) Emitter-collector voltage IE = 200A, VGE = 0V — — 2.6 V
Rth(j-c)Q IGBT part (1/2 module) — — 0.21 °C/W
Thermal resistance*1
Rth(j-c)R FWDi part (1/2 module) — — 0.35 °C/W
t

Rth(c-f) Contact thermal resistance Case to fin, Thermal compound applied *2 (1/2 module) — 0.07 — °C/W
Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.15 *3 °C/W
No

RG External gate resistance 3.1 — 31 Ω

Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
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Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-12F
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
400 3
15

SATURATION VOLTAGE VCE (sat) (V)

Tj=25°C 11 VGE = 15V

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COLLECTOR CURRENT IC (A)

350 10
VGE=20V 2.5
9.5

COLLECTOR-EMITTER
300
9 2
250

200 1.5
8.5
150

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1
100

n
8 Tj = 25°C
0.5
50 Tj = 125°C
7.5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

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COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE
VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7
5 Tj = 25°C
EMITTER CURRENT IE (A)

4 3
COLLECTOR-EMITTER

2
102
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3 7
5
3
IC = 400A 2
2
IC = 200A 101
7
5
1 IC = 80A
3
R

2
0 100
6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

t

CAPACITANCE–VCE HALF-BRIDGE
No

CHARACTERISTICS SWITCHING CHARACTERISTICS

(TYPICAL) (TYPICAL)
102 103
7 7
CAPACITANCE Cies, Coes, Cres (nF)

Cies
5 5 td(off)
3 3
SWITCHING TIMES (ns)

2 2 tf
101 102
td(on)
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7 7
5 5
3 3
2 2
Coes Conditions:
100 101 tr
7 7 VCC = 300V
5 Cres 5 VGE = ±15V
3 3 RG = 3.1Ω
2 VGE = 0V 2 Tj = 125°C
10–1 –1 100 0
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7101 2 3 5 7102 2 3 5 7103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Sep.2000
 MITSUBISHI IGBT MODULES

CM200DU-12F
HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS TRANSIENT THERMAL

OF FREE-WHEEL DIODE IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT part & FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

102 101

THERMAL IMPEDANCE Zth (j–c) (°C/W)

7 IGBT part:
REVERSE RECOVERY TIME trr (ns)

7 5 Per unit base = Rth(j–c) = 0.21°C/ W

Irr

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3 FWDi part:

NORMALIZED TRANSIENT
5
trr 2 Per unit base = Rth(j–c) = 0.35°C/ W
3 100
7
2 5
3 3
2 2
101 10–1 10–1
7 7
7 5 5
5 3 3

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Conditions: 2 2
3
VCC = 300V 10–2 10–2
VGE = ±15V 7 7

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2 5 5
RG = 3.1Ω Single Pulse
3 3
Tj = 25°C 2 TC = 25°C 2
100 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TMIE (s)

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GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE VGE (V)

18 IC = 200A
VCC = 200V
16
14
VCC = 300V
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12
10
8
6
4
R

2
0
0 200 600 1000 1400 1800

GATE CHARGE QG (nC)

t
No
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Sep.2000