TO-220F 8A Triac

TM841S-L, TM861S-L
■ Features External Dimensions 4.2±
0.2
(Unit: mm) φ 3.3±0.2 10.0±
0.2
●Repetitive peak off-state voltage: VDRM=400, 600V 2.8 C 0.5

4.0±0.2
8.4±0.2
●RMS on-state current: IT(RMS)=8A

16.9±0.3
●Gate trigger current: IGT=30mA max (MODE , , )

3.9±0.2 0.8±0.2
a
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) b
1.35±
0.15

●UL approved type available 1.35±0.15

13.0 min
+0.2
0.85 – 0.1

2.4±
+0.2 0.2
2.54 2.54 0.45 – 0.1

2.2±0.2
(1). Terminal 1 (T1) a. Part Number
(2). Terminal 2 (T2) b. Lot Number
(3). Gate (G)
(1) (2) (3) Weight: Approx. 2.1g

■Absolute Maximum Ratings

Ratings
Parameter Symbol Unit Conditions
TM841S-L TM861S-L
Repetitive peak off-state voltage VDRM 400 600 V
RMS on-state current IT(RMS) 8.0 A Conduction angle 360°, Tc=90°C
Surge on-state current ITSM 80 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Peak gate power loss PGM 5 W
Average gate power loss PG(AV) 0.5 W
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Isolation voltage VISO 1500 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min.

■Electrical Characteristics (Tj=25°C, unless otherwise specified)

Ratings
Parameter Symbol Unit Conditions
min typ max
0.3 2.0 VD=VDRM, RGK=∞, Tj=125°C
Off-state current IDRM mA
0.1 VD=VDRM, RGK=∞, Tj=25°C
On-state voltage VTM 1.6 V Pulse test, ITM=10A
+ +
0.8 2.0 T2 , G
+ –
0.7 2.0 T2 , G
Gate trigger voltage VGT V VD=6V, RL=10Ω, TC=25°C – –
0.8 2.0 T2 , G
– +
0.9 T2 , G
+ +
8 30 T2 , G
+ –
10 30 T2 , G
Gate trigger current IGT mA VD=6V, RL=10Ω, TC=25°C – –
12 30 T2 , G
– +
30 T2 , G
Gate non-trigger voltage VGD 0.2 V VD=1/2×VDRM, Tj=125°C
Holding current IH 12 mA VD=6V
Thermal resistance Rth 3.6 °C/W Junction to case

38
 TM841S-L, TM861S-L

vT – iT Characteristics (max) ITSM Ratings Gate Characteristics

100 100 12

Gate trigger voltage VGT (V)

Initial junction temperature
50 Tj=125°C 3

Tj= –40°C
Tj= –20°C
ITSM

Surge on-state current ITSM (A)

10 2

Tj=25°C
80 10 ms
iT (A)

1cycle 1

vGF (V)
10 8 0
0 20 40 60 80 100
On-state current

60 50Hz Gate trigger current

5 Tj=125°C IGT (mA)

Gate voltage
6

PG
M
Tj=25°C

=5
40

W
1 4

0.5 20
2 See graph at the upper right

0.1 0 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 0 1 2 3
On-state voltage vT ( V ) Number of cycle Gate current iGF (A)

IT(RMS) – PT(AV) Characteristics IH temperature Characteristics

IT(RMS) – Tc Ratings IT(RMS) – Ta Ratings (Typical) (VD =30V)
12 150 150 10
Full-cycle sinewave Full-cycle sinewave Full-cycle sinewave
Conduction angle :360°
Average on-state power PT(AV) (W)

Conduction angle :360° Conduction angle : 360°

10 125 125
Ambient temperature Ta (°C)
Self-supporting
8
Case temperature TC (°C)

Natural cooling

Holding current IH (mA)

No wind
8 100 100
6 +
(T2 – T1 )
–

6 75 75

4 – +
( T2 – T1 )
4 50 50

2
2 25 25

0 0 0 0
0 2 4 6 8 10 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 –40 0 25 50 75 100 125
RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C)

Pulse trigger temperature Characteristics vgt (Typical)

(MODE – ) (MODE – ) (MODE – )
30 30 30
vgt vgt
)

)
vgt
voltage at 25°C

voltage at 25°C

voltage at 25°C
gate trigger

gate trigger

gate trigger

50% 50% 50%

tw tw tw
10 10 10
Tj= – 40°C Tj= – 40°C Tj= – 40°C
– 20°C – 20°C – 20°C
5
VGT DC

VGT DC

VGT DC

5 25°C 5 25°C 25°C

(

75°C 75°C 75°C

125°C 125°C 125°C
)

)
gt Gate trigger voltage

trigger voltage

trigger voltage

1 1 1
at Tj and tw

at Tj and tw

at Tj and tw

0.5 0.5 0.5

vgt ( Gate

vgt ( Gate
(
v

0.1 0.1 0.1

0.5 1 10 10 2 103 10 4 0.5 1 10 10 2 103 10 4 0.5 1 10 10 2 103 10 4
Pulse width tw (µs) Pulse width tw (µs) Pulse width tw (µs)

Pulse trigger temperature Characteristics igt (Typical)

(MODE – ) (MODE – ) (MODE – )
30 30 30
igt
)

igt igt
gate trigger

gate trigger

gate trigger
current at 25°C

current at 25°C

current at 25°C

50% 50% 50%

tw tw Tj= – 40°C tw
10 Tj= – 40°C Tj= – 40°C 10
10 – 20°C
– 20°C – 20°C 25°C
25°C 25°C
5 5 5 75°C
IGT DC

IGT DC

IGT DC

75°C 75°C 125°C

125°C
(

125°C
)

)
gt Gate trigger current

trigger current

trigger current

1 1 1
at Tj and tw

at Tj and tw

at Tj and tw

0.5 0.5 0.5

igt (Gate

igt (Gate
(
i

0.1 0.1 0.1

0.5 1 10 10 2 103 10 4 0.5 1 10 10 2 103 10 4 0.5 1 10 10 2 103 10 4
Pulse width t w (µs) Pulse width t w (µs) Pulse width t w (µs)

VGT temperature characteristics IGT temperature characteristics Transient thermal resistance

(Typical) (VD=6V, RL=10Ω) (Typical) (VD=6V, RL=10Ω) Characteristics
1.2 50 100
rth (°C/W)

MODE (T2–,G– )
MODE (T2+,G+ ) Junction to
1.0 operating
(T2+,G– ) 40
Gate trigger voltage VGT (V)

MODE
Gate trigger current IGT (mA)

environment
Transient thermal resistance

0.8 10
30
– –
0.6 MODE (T2 , G )
MODE (T2+, G– )
Junction to
20
case
MODE (T2+, G+ )
0.4 1

10
0.2

0 0 0.1
–40 0 25 50 75 100 125 – 40 0 25 50 75 100 125 0.1 1 10 10 2 10 3 10 4 10 5
Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms)

39