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Working Principles :
The diode is only made of N-type of material such as gallium arsenide and indium phosphide.
This material have one extra energy band gap instead of having only two energy bands and
that band are valence band and conduction band which is available in normal semiconductor
materials. Initially the third energy band is empty.
When the voltage applied across it, the applied voltage appears on active region. The electron
is transfer from conduction band to third band. The mobility of GaAs in third band is less than
conduction band.
We further increase forward voltage, this voltage increases field strength. The number of
electrons reaching the state at which the effective mass increases by decreasing their velocity,
and thus, the current will decrease.
If we increase the field strength, the drift velocity will decrease. This will produce negative
resistance in V-I relationship. The increment of voltage will increase negative resistance.
Advantages and Disadvantages of Gunn Diode :
The advantage of Gunn diodes include :
✓ lies in the fact that they are the cheapest source of microwaves (compared to other options
such as klystron tubes)
✓ They are compact in size.
✓ They operate over a large bandwidth and possess high frequency stability.