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N-channel MOSFET
Order Codes
Item Sales Type Marking Package Packaging
1 SW P 7N65 SW7N65 TO-220 TUBE
2 SW F 7N65 SW7N65 TO-220F TUBE
Thermal characteristics
Value
Symbol Parameter Unit
TO-220 TO-220F
Rthjc Thermal resistance, Junction to case 0.85 2.52 oC/W
Mar. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7
Free Datasheet http://www.datasheet4u.com/
SAMWIN SW7N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off characteristics
BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 650 - - V
VDS=650V, VGS=0V - - 1 uA
IDSS Drain to source leakage current
VDS=520V, TC=125oC - - 20 uA
Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA
IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA
On characteristics
VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V
RDS(ON) Drain to source on state resistance VGS=10V, ID = 3.5A 1.1 1.32 Ω
Dynamic characteristics
Ciss Input capacitance 1200 1500
Coss Output capacitance VGS=0V, VDS=25V, f=1MHz 110 145 pF
Crss Reverse transfer capacitance 30 40
td(on) Turn on delay time 24 60
tr Rising time 60 130
VDS=325V, ID=7.0A, RG=25Ω ns
td(off) Turn off delay time 100 210
tf Fall time 64 140
Qg Total gate charge 35 46
Qgs Gate-source charge VDS=520V, VGS=10V, ID=7.0A 5.5 - nC
Qgd Gate-drain charge 15 -
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SAMWIN SW7N65
Fig. 1. On-state characteristics Fig. 2. Transfer characteristics
Top : VGS
15.0V
10.0V
1 1
10 9.0V 10
8.0V
6.0V
Bottom :
o
150 C
0
10 0
10
o
25 C
o
-55 C
*. Notes : *. Notes :
1. 250¥ىs Pulse Test 1. VDS = 50V
o
10
-1 2. TC = 25 C
2. 250us Pulse Test
-1
10
-1 0 1 2 3 4 5 6 7 8 9 10
10 10 10
3.0
2.5
Drain-Source On-Resistance[¥]ط
1
10
VGS = 10V
2.0
VGS = 20V
1.5
RDS(ON),
0
10
1.0
O
150 C
O
25 C
0.5 *. Notes :
1. VGS = 0V
O
*. Note : TJ = 25 C 2. 250us Pulse Test
0.0 -1
10
0 2 4 6 8 10 12 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, Drain Current [A] VSD, Source-Drain voltage[V]
3000 12
Ciss=Cgs+Cgd(Cds=shorted)
2750
Coss=Cds+Cgd
2500 Crss=Cgd VDS = 520V
10
VGS, Gate-Source Voltage [V]
*. Notes :
2000 1. VGS = 0V 8
Ciss 2. f=1MHz
1750
1500 6
1250
Coss
1000
4
750
Crss
500
2
250
*. Note : ID = 7 A
0
5 10 15 20 25 30 35 40 0
0 5 10 15 20 25 30 35 40
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]
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SAMWIN SW7N65
Fig 7. Breakdown Voltage Variation Fig. 8. On resistance variation
vs. Junction Temperature vs. junction temperature
1.2 3.0
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
BVDSS, (Normalized)
1.1
RDS(on), (Normalized)
2.0
1.0 1.5
1.0
0.9 *. Notes : *. Notes :
1. VGS = 0 V 1. VGS = 10 V
2. ID = 250 uA
0.5 2. ID = 3.5 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
Fig. 9. Maximum drain current vs. Fig. 10. Maximum safe operating area
case temperature.
2
8
10
Operation in This Area
is Limited by R DS(on)
1
100 s
6 10
ID, Drain Current [A]
1 ms
ID' Drain Current [A]
10 ms
4 10
0
DC
2 10
-1
*. Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
0 -2
3. Single Pulse
25 50 75 100 125 150 10
0 1 2 3
10 10 10 10
o
TC' Case Temperature [ C]
VDS, Drain-Source Voltage [V]
0
10
Z¥èJC (t), Thermal Response
D=0.5
*. Notes :
0.2 o
1. Z¥èJC(t) = 0.85 C/W Max.
-1 2. Duty Factor, D=t1/t2
10 0.1
3. TJM - TC = PDM * Z¥èJC(t)
0.05
t1
0.02
0.01 t2
single pulse
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
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SAMWIN SW7N65
VDS
QGS QGD
DUT
VGS
1mA
Charge
VDS 90%
RL
RG VDS
VDD
VIN 10% 10%
tON tOFF
1 BVDSS
EAS = L X IAS2 X
L 2 BVDSS - VDD
BVDSS
IAS
IAS
VDS
RG VDD
ID(t)
DUT
10VIN VDS(t)
tp time
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SAMWIN SW7N65
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
-
IS L di/dt
IS (DUT)
VDS IRM
*. dv/dt controlled by RG
*. Is controlled by pulse period Body diode forward voltage drop
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SAMWIN SW7N65
REVISION HISTORY
REV 2.0 Updated the format of datasheet and added Alice Nie 2011.03.24 XZQ
Order Codes.
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