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Solar Energy 218 (2021) 621–638

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Solar Energy
journal homepage: www.elsevier.com/locate/solener

Review

Recent progress in emerging 2D layered materials for organic solar cells


Yong Zhao a, Liangmin Yu b, Mingliang Sun a, c, *
a
School of Materials Science and Engineering, Ocean University of China, Qingdao 266100, China
b
Key Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, Ocean University of China, Qingdao 266100, China
c
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology,
Guangzhou 510640, China

A R T I C L E I N F O A B S T R A C T

Keywords: Currently, organic solar cells (OSCs) are one of the most cutting-edge photovoltaic technologies due to their
Organic solar cells light-weight, semitransparent, and flexible advantages, which meet the needs of commercial applications. In
2D materials order to fully develop the application potential of this novel class of photovoltaic cells, organic molecular design
Electrodes
and device construction have all been playing significant roles. Research shows that two-dimensional (2D)
Charge transport materials
Additives
layered materials with unique physical structure and excellent photoelectric properties can effectively optimize
the device performance of OSCs. Although the exploration of various emerging 2D materials for use in OSCs has
made considerable progress, there remain some crucial bottlenecks to be solved. In this review, the progress that
has been made in the application of these 2D materials for OSCs in recent years is presented, including MXenes,
black phosphorus (BP), and transition metal dichalcogenides (TMDs), etc. The merits and demerits of 2D ma­
terials in OSCs application are summarized in detail. Ultimately, it outlines the commercial development di­
rection of OSCs in the near future, and the significance of 2D materials in stable, low-cost, large-area, and flexible
devices.

1. Introduction 2019; Zhang et al., 2019). With the progress of materials (such as fused-
ring electron acceptors) (Lin et al., 2015; Lu, S. et al., 2020; Yuan et al.,
Due to the current global energy shortage and the accompanying 2019) and devices, the power conversion efficiency (PCE) of OSCs has
environmental crisis, it is urgent to seek low-cost, clean, and renewable exceeded 18% so far (Cui, Y. et al., 2020; Liu et al., 2020).
energy as alternatives (Cui et al., 2019; Li et al., 2019; Sun et al., 2020; Despite the unprecedented development, still a lot remains to be
Xing et al., 2020). The conversion of solar energy via solar cell devices is done. The significant challenges include environmental stability (water,
considered to be one of the most fascinating and promising green energy oxygen, and irradiation), scalability, and stability of device structure,
technologies. Recently, perovskite solar cells (PSCs) (Cui, D. et al., which severely limit the potential for commercialization (Brus et al.,
2020), quantum dot solar cells (QDSCs) (Wang et al., 2018), dye sensi­ 2019; Naveed et al., 2019; Yu, P. et al., 2019). It is well acknowledged
tive solar cells (DSSCs) (Chen, L. et al., 2019), and other photovoltaic that hole transport layer (HTL) and electron transport layer (ETL) of
technologies have all been intensively investigated. Among above solar OSCs have long-term instability and high cost (Ayari et al., 2007; Li, J.
cells, OSCs are currently sitting in the spotlight thanks to their advan­ et al., 2020; Ruscello et al., 2019; Schulz et al., 2014). As such, the
tages in chemical structural diversity, solution-processability and flexi­ investigation of active layer, electrode, and interlayer is one of the
bility. These strengths ensure that OSCs can manufacture low-cost and strategies to improve the performance and stability of device. Various
large-area devices on flexible substrates (Fan et al., 2019; Yan et al., materials have been in comprehensive researched as modifiable or

Abbreviations: OSCs, Organic solar cells; PSCs, Perovskite solar cells; QDSCs, Quantum dot solar cells; DSSCs, Dye sensitive solar cells; PCE, Power conversion
efficiency; JSC, Short-circuit current density; VOC, Open circuit voltage; FF, Fill factor; EQE, External quantum efficiency; SCLC, Space charge limited current; μe,
Electron mobility; μh, Hole mobility; BP, Black phosphorus; BPQDs, Black phosphorus quantum dots; PQDs, Perovskite quantum dots; GR, Grapheme; TMDs,
Transitional metal dichalcogenides; GO, Graphene oxide; R-GO, Reduced graphene oxide; MOFs, Metal organic frameworks; AgNW, Silver nanowire; ITO, Indium-
doped tin oxide; FTO, Fluorine-doped tin oxide; PI, Polyimide; HTL, Hole transport layer; ETL, Electron transport layer; HEL, Hole extraction layer; EEL, Electron
extraction layer; 2D, Two-dimensional; TCEs, Transparent conductive electrodes; CVD, Chemical vapor deposition; FOM, Figure of merit.
* Corresponding author.
E-mail address: mlsun@ouc.edu.cn (M. Sun).

https://doi.org/10.1016/j.solener.2021.02.066
Received 21 December 2020; Received in revised form 25 February 2021; Accepted 26 February 2021
Available online 23 March 2021
0038-092X/© 2021 International Solar Energy Society. Published by Elsevier Ltd. All rights reserved.
Y. Zhao et al. Solar Energy 218 (2021) 621–638

alternative materials for different components of OSCs. According to the community since the advent of GR in 2004. After that, TMDs (Shi­
literature, the work function of 2D materials is tunable through func­ vayogimath et al., 2019), BP (Eswaraiah et al., 2016; Sang et al., 2019),
tionalization or specific treatment methods. What is more, 2D materials MXenes (Lu, C. et al., 2020; Zang et al., 2020) and other 2D materials
can be fabricated easily via solution-processable techniques (Pan et al., were discovered one after another, opening a universe of applications
2019; Zhao et al., 2018). Owing to superb optoelectronic, stable me­ for 2D materials in optoelectronic devices (Table 1) (Li, F. et al., 2020).
chanical and physical properties, as well as unique morphology and Some 2D layered materials can be made into monolayer or few-layers
structure, 2D layered materials is proven to be promising candidates for nanosheets with controllable size and morphology by facile exfolia­
boosting the performance of OSCs (Batmunkh et al., 2018; Díez-Pascual tion. Therefore, 2D layered materials can be used as essential auxiliary
et al., 2018). Nowadays, with the rapid development of tandem (Ling­ factors to promote the development of OSCs devices. The recent explo­
xian Meng et al., 2018; Liu, G. et al., 2019), flexible transparent (Chen ration of emerging 2D layered materials in different components of OSCs
et al., 2020), and ternary OSCs (Jin et al., 2019), 2D layered materials will be discussed in the following sections (Fig. 1).
will definitely have more application space. Therefore, it is of great
significance to summarize the latest progresses that has been made in 3.1. Electrode
this hot field.
Herein, we briefly introduced the common structures and compo­ ITO and Fluorine-doped tin oxide (FTO) are often used as the highly
nents of OSCs. Subsequently, this review comprehensively summarized transparent and conductive electrode of OSCs. Nevertheless, the ITO is
the recent advances in applying emerging 2D materials such as BP, expensive and not resistant to high and low pH (Bonaccorso et al., 2010;
MXenes, TMDs, graphene (GR) and its derivatives to improving the Choi et al., 2011). What is more, its rigid nature makes it easily breaking
performance of OSCs by optimizing device structure. Ultimately, we or cracking on flexible substrates (Bonaccorso et al., 2010; Stotter et al.,
outlined the challenges and requirements for the future commerciali­ 2005). Such issues mean that commercial OSCs require better electrode
zation of 2D materials based efficient and low-cost OSCs. replacements with high transparency, excellent conductivity, flexibility
and stability (Table 2).
2. Overview of OSCs device structure Graphene is regarded as a potential material that could act as
transparent conductive electrodes (TCEs) for flexible optoelectronic
For decades, the growing interest in OSCs has resulted in the gradual devices due to its superb mechanical and photoelectric properties (Wan
completion of device structure, namely, conventional and inverted. In et al., 2011). It was used as TCE by Klaus Müllen et al. in 2008 (Wang
general, the device structure includes a conductive substrate, HTL, et al., 2008). Simultaneously, Peumans et al. (Wu et al., 2008) reported
active layer, ETL, and electrode. Promising component materials should the solution-processed GR as transparent electrode in OSCs. It has been
exhibit the following properties: i) suitable energy alignment to others, proved that GR and its derivatives could be used as TCEs to replace
ii) durability, iii) low-cost, iv) high carrier mobility, and v) transparency traditional ITO. Previously, the development of GR electrodes in OSCs
(Yao et al., 2019). has been systematically summarized (Mahmoudi et al., 2018).
Interface engineering is a critical factor in achieving high photo­ Lately, Park group published that flexible OSCs with polyimide (PI)-
voltaic performances for large-area, flexible, and printable OSCs. Rigid integrated GR as electrode reached 15% efficiency (Koo et al., 2020). In
indium-doped tin oxide (ITO) glass often is used as a conductive sub­ order to avoid the influence of high-temperature annealing processes on
strate, which does not meet the commercial needs of flexible substrates. the plastic substrate, this article introduced a superior thermal stable,
However, the performance of flexible OSCs still falls behind that of their mechanical durable, and flexible electrode prepared via integration of PI
rigid counterparts (Meng et al., 2019; Yan et al., 2019). Currently, the on GR (Fig. 2a-c). PI film is a flexible material with a wide range of
direct integration of polyimide (PI) on layered GR has been realized to applications and easy processing. PI is used not only as a carrier film but
obtain a highly flexible substrate with thermal stability (Tang et al., also as a substrate of GR, thereby simplifying the electrode preparation
2019). Generally, low work function materials are used as ETL, whereas process. (Koo et al., 2020). As we all know, the associated high surface
high work function materials are used as HTL (Liu et al., 2015). There roughness can deteriorate the performance of device, whereas PI@GR is
are still some deficiencies in the electron and hole transport materials ultra-clean, smooth, and high-quality surface without polymer residue
currently used. For example, metal oxides (ZnO、MoO3) (Girotto et al., (RMS only is 0.34 nm). Single layer GR (≈ 25 μm) was prepared by low-
2011; Sun et al., 2011) are fabricated from high-cost vacuum deposition, pressure chemical vapor deposition (CVD) on Cu foil, which had higher
and the hygroscopic nature and high acidity of poly (3,4-ethyl­ transparency and conductivity than those of prepared by Hummer’s.
enedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are serious
issues, greatly affecting the device performance and stability (Lin et al.,
Table 1
2019; Yun et al., 2011). Hence, the interface layer can be doped or Overview of key parameters of emerging 2D materials.
replaced with 2D layered materials to improve stability and conduc­
2D Bandgap Carrier Thermal Ref.
tivity, which has been proved by lots of research. Simultaneously,
materials [eV] Mobility Conductance [W
inserting hole or electron extraction layer between active layers and [cm2V-1s− 1] m-1K− 1]
electrodes is the effective strategies to facilitate charge collection and
Ti3C2Tx 0 – 3.4 0.70 10 – 472 Naguib et al.,
transport (Lin et al., 2016; Wijeyasinghe et al., 2017; Yu et al., 2016). 2014; Yang et al.,
Upon light absorption by the active layer, an exciton (electron-hole pair) 2019b
is generated. In order to ensure the maximum migration and separation GR 0 2 × 105 5 × 103 Wan et al., 2011
of exciton, it is necessary to build fabulous morphology of the active BP 0.3 – 2.0 1000 10 – 36 Qiao et al., 2014;
Pang et al., 2018
layer. In addition to fine molecular design, the introduction of 2D
MoS2 1.2 – 1.8 10 – 200 34.5 – 52 Bati et al., 2019;
layered materials into the active layer is also a practical means to Wang et al.,
ameliorate morphology and maintain its durability (Van Le et al., 2017). 2012; Gu et al.,
2D layered materials are attracting increasing attention as candidate 2013
WS2 1.3 – 2.1 43 – 234 32 – 53 Lin et al., 2019
materials for OSCs owing to their distinctive properties, adjustable en­
WSe2 1.2 – 1.7 140 – 500 9.7 Lin et al., 2019;
ergy level, and solution processability. yang et al.,
2019c
3. 2D layered materials in OSCs α-In2Se3 1.5 – 2.8 —— —— Wang et al.,
2019; Li et al.,
2020a,b
2D materials have drawn enormous attention from the scientific

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Fig. 1. Schematic diagram showing


the different classes of 2D materials
covered in this progress report. (Black
Phosphorus) Reprinted with permis­
sion from (Batmunkh et al., 2018)
Copyright 2018 Wiley. (Transitional
Metal Dichalcogenides) Reprinted
with permission from (Gu et al.,
2013) Copyright 2013 Wiley. (Gra­
phene) Reprinted with permission
from (Mahmoudi et al., 2018) Copy­
right 2018 Elsevier. (MXenes)
Reprinted with permission from
(Yang et al., 2019a) Copyright 2019
Royal Society of Chemistry.

Table 2
The 2D materials are used as electrodes in OSCs recently.
2D materials Transmittance [%] Sheet resistance [Ω] Work function [eV] Device structure Ref.

Ti3C2Tx 68 – 84 26 − 5.28 MX@AgNW-PUA/PEDOT:PSS/PBDB-T:ITIC:PC71BM/PDINO/Al Tang et al., 2019


GR greater than 92 83 − 4.65 PI@GR/PEDOT:PSS/PM6:Y6/PDINO/Al Koo et al., 2020
GR 89 14 —— GR@AgNW/PEDOT:PSS/PTB7:PC71BM/Ba/Al Ricciardulli et al., 2018
N-GR 97.3 305 ± 17 − 4.03 PET/GR/ZnO-NP-AF/PTB7-Th:PC71BM/MoO3/Ag Jung et al., 2018
GO 87 18 —— PET/GO@AgNW/PEDOT:PSS/PTB7:PC71BM/LiF/Al Wang et al., 2017
GR 70 520 − 4.50 GR/PEDOT:PSS/PTB7:PC71BM/Ba/Al Ricciardulli et al., 2017
ITO-glass 79 – 83 15 − 4.80 —— Tang et al., 2019

This method can improved the quality of the interface between GR and flexible devices is comparable to ITO based on control device, and
conductive substrate, which obtained a high optical transmittance demonstrates outstanding mechanical durability during up to 10,000
(92%) as well as low sheet resistance (Rs = 83 Ω/sq). It is attributed to bending cycles.
the fact that the GR prepared by Hummer’s method contains sp3- car­ In 2011, a newly class of 2D transition metal carbides and/or nitrides
bons and structural defects, which leads to a significant decrease in the discovered by Gogotsi and W. Barsoum et al. (Naguib et al., 2011), called
charge carrier mobility (Mahmoudi et al., 2018; Wang et al., 2011). PI “MXenes”, has attracted wide attention. At present, over 70 members of
also enhanced thermal stability and durability by suppressing delami­ different MAX phases have been discovered, which have shown great
nation of GR under mechanical stress. It can be seen from flat-band promise in optoelectronic devices because of metallic conductivity, high
energy level diagram that PI@GR has an appropriate work function as surface area as well as transparency in the visible range (Naguib et al.,
an electrode. The PI@GR-based OSCs with PM6:Y6 as active layer 2014; Yu, L. et al., 2019). The general formula of MXenes is Mn+1XnTx,
showed a PCE of 15.2% with a short-circuit current density (JSC) of 25.8 where M is early transition metal, X denotes carbon or nitrogen, and T
mA/cm2, an open circuit voltage (VOC) of 0.84 V, and a fill factor (FF) of represents the termination functional groups (–O, –OH, and –F). MXenes
70% (Fig. 2d-e), which was the highest efficiency reported for GR are typically synthesized by selective etching of the “A” layers of MAX
electrode based flexible OSCs so far. The performance of PI/GR based phase using a hydrofluoric acid (Alhabeb et al., 2017). High electrical

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Fig. 2. (a) Schematic describing the two-step fabrication process of PI@GR. AFM topography image of (b) PI/GR and (c) PI@GR. Height profile is obtained from the
dashed line in the corresponding image. (d) J–V characteristics and (e) EQE spectra with integrated current density of OSCs. Reprinted with permission from (Koo
et al., 2020) Copyright 2020 Elsevier.

conductivity 2D MXenes have been used as additive and electrode in comparable to ITO and the sheet resistance value only is 26 Ω/sq when
PSCs (Guo et al., 2018; Yang, L. et al., 2019) and DSSCs (Chen, Y. et al., the film thickness is 800 nm. It is reported that Ti3C2Tx/AgNW-PUA
2019). The above research results found that MXenes materials signifi­ films as TCEs of ternary flexible OSCs (Ti3C2Tx/AgNW-PUA/PEDOT:
cantly affected the growth of perovskite grains and the conductivity of PSS/PBDB-T:ITIC:PC71BM/PDINO/Al) obtained a PCE of 8.3% with a
complete solar cells devices. JSC of 14.9 mA/cm2, an VOC of 0.88 V, and a FF of 63% (Fig. 3a), which
In 2019, Ti3C2Tx MXene materials have been investigated as trans­ represented a breakthrough in flexible photovoltaic technology. Finally,
parent electrodes in flexible ternary OSCs by Chen et al. (Tang et al., bending tests indicated that the flexible ternary OSCs capable of
2019). They prepared Ti3C2Tx/silver nanowire (AgNW) hybrid films as retaining 84.6% of the original PCE after 1000 bending-unbending cy­
transparent and flexible electrode by a simple and scalable solution- cles to a 5 mm bending radius (Fig. 3c-d), which showed that the Ti3C2Tx
processed method, achieving a high figure of merit (FOM = 162.49). material had excellent mechanical stability as an electrode.
The Ti3C2Tx coating was applied via electrostatic interactions. It can be Park group reported that annealing-free ZnO nanoparticles (ZnO-
concluded from tests such as atomic force microscopy (AFM) and NPs)
transmittance that the Ti3C2Tx/AgNW hybrid films exhibits low rough­ were integrated on the GR electrode surface and applied to the
ness (Fig. 3b). Work function calculated by the ultraviolet photoelectron inverted OSCs in 2018 (Jung et al., 2018). It turns out that this method
spectroscopy (UPS) is − 5.28 eV, which matches well with corresponding can boost the applicability of GR as TCEs in flexible OSCs, because
transport layer material. The transmittance of Ti3C2Tx/AgNW-PUA is uniform ZnO-NPs coating can effectively improve the charge transfer

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Y. Zhao et al. Solar Energy 218 (2021) 621–638

Fig. 3. (a) J − V characteristics of OSCs based on PBDB-T:ITIC:PC71BM with different conductive substrate. (b) Transmittance spectra of neat PUA, MXene-PUA,
AgNW-PUA, optimized MXene/AgNW-PUA and ITO-glass. (c) R/R0 of MXene/AgNW-PUA films as a function of bending and unbending cycles to a bending
radius of 5 mm. (d) Normalized PCE of flexible OSCs with MXene/AgNW-PUA transparent electrodes at different bending radii as a function of the number of bending
cycles. Reprinted with permission from (Tang et al.,2019) Copyright 2019 American Chemical Society.

from the active layer to electrode. The PCEs of the inverted PTB7-Th: 0.24 eV after the introduction of ZnO-NPs, which was attributed to
PC71BM-based OSCs using this TCE on the solid (ITO) and flexible (PET) successfully N-doping of GR by ZnO (Fig. 4c). After the mechanical
substrates are 8.2% and 7.4%, respectively (Fig. 4a). The corresponding bending test, the flexible inverted OSCs based on GR has a PCE of 7.4%
UPS data showed that the work function of GR was reduced by about and still retains over 80% (Fig. 4b), which is attributed to the perfect

Fig. 4. (a) J − V characteristics curves of OSCs based on PET and glass substrate (insert is the schematic of graphene-ZnO NPs). (b) Normalized PCE of PET/graphene
and PET/ITO devices (PTB7-Th:PC71BM) with bending cycles at a bending radius of 3 mm. (c) Cut-off (left) and onset (right) regions of UPS spectra from pristine
graphene, and graphene/ZnO-NP. Reprinted with permission from (Jung et al., 2018) Copyright 2018 American Chemical Society. (d) J–V characteristics of the OSCs
devices (inset is flexible AgNWs/EG-based OSCs). (e) Rs response of AgNWs and AgNWs/EG films on PEN substrate to different bending cycles. (f) Cross-sectional
SEM images of EG thin layer on the top of the AgNWs network. Reprinted with permission from (Ricciardulli et al., 2018) Copyright 2018 Wiley.

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Y. Zhao et al. Solar Energy 218 (2021) 621–638

combination of GR with superior mechanical flexibility and annealing- 2D layered materials used as electrodes in OSCs are mainly designed
free ZnO-NPs (Jung et al., 2018). to meet the commercial requirements of flexibility and semitransparent.
In 2018, W. M. Blom et al. (Ricciardulli et al., 2018) reported a TCE At present, high-efficiency OSCs with 2D materials as transparent
(AgNWs/EG) with chemical stability and excellent mechanical. The conductive electrodes have been demonstrated. 2D materials have better
AgNWs coupled electrochemical exfoliated grapheme (EG) obtained a adjustability and diversity compared with rigid ITO, have excellent
high transparency electrode with low-surface roughness (RMS = 4.6 nm) electrical conductivity. The replacement of ITO with 2D materials is
and low sheet resistance (Rs = 13.7 Ω sq-1) (Ricciardulli et al., 2018). As feasible in the near future. However, a more reliable and low-cost
shown in Fig. 4d-f, EG can not only overcome the limitations of the scalable fabrication process for the uniform layer is needed to bring
AgNWs network, but also reduce the sheet resistance and roughness of 2D materials to market, which is an urgent problem in the application of
materials. The AgNWs/EG films on PEN substrate as electrode has 2D materials in OSCs.
excellent mechanical flexibility and maintains a very low Rs under
different bending cycles, which is significantly better than AgNWs alone.
3.2. Interface modification layer (EEL and HEL)
The AgNWs/EG-based OSCs had a remarkable PCE of 6.57% (JSC = 15.5
mA/cm2, VOC = 0.73 V, FF = 58%), using PTB7:PC71BM as active layer,
Here, we regard the interface layer that assists and facilitates elec­
comparable to the commercial ITO based counterparts. Madanipour
tron transport as electron extraction layer (EEL), which exists between
et al. (Fakharan et al., 2019) presented an iodine-mediated fine-tuning
active layer or ETL and electrode (Xing et al., 2018). As an effective EEL,
method to prepare RGO/iodine based electrodes for ITO-free OSCs in
the material must be of low work function and high electron mobility,
2019. They studied the effects of surface roughness and iodine (I) con­
and could lower the work function of the cathode and transfer electrons
tent on PCE, and found that low surface roughness and high I content
from the active layer to the cathode efficiently. Conversely, hole
can reduce the device resistance. In 2017, W. M. Blom et al. (Ricciardulli
extraction layer (HEL) is also defined in this way. Interface modification
et al., 2017) and Kang et al. (Wang et al., 2017) successively reported the
is one of the important means to optimize the device structure. 2D
application of solution-processable high-quality GR and graphene oxide
layered materials with fine morphology as an interface modification
(GO)/AgNW in OSCs as electrodes, reaching PCEs with PTB7:PCB71M as
layer play a significant role in promoting charge extraction and
active layer of 4.23% and 7%, respectively.
injection.

Fig. 5. (a) Zoom-in HR–TEM image of the BP as indicated (inset shows the corresponding FFT image). (b) HR–TEM image of a BP showing layered structure. (c)
Inverted OSCs with BP incorporation under different conditions. Reprinted with permission from (Lin et al., 2016) Copyright 2016 Wiley. (d) HR–TEM image of
GMo2. (e) AFM image of GMo2 deposited on a mica substrate. (f) J–V characteristics of PTB7-Th:PC71BM OSCs based on PEDOT:PSS (black), GMo1(blue), GMo2
(cyan), and GMo3(green). Reprinted with permission from (Zheng et al., 2019) Copyright 2019 Elsevier. (g) TEM and (h) AFM images of MOF nanosheets. (i) J–V
characteristics based on PBDB-T:ITIC-Th. Reprinted with permission from (Xing et al., 2018) Copyright 2018 Elsevier. (For interpretation of the references to colour
in this figure legend, the reader is referred to the web version of this article.)

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Black phosphorus (BP) is a novel class of 2D semiconducting mate­ ITIC-Th-based OSCs, and obtained a PCE of 10.39% (JSC = 17.1 mA/
rial. At present, liquid-phase exfoliated BP nanoflakes (NFs) and quan­ cm2, VOC = 0.86 V, FF = 71%). This work is one of the few attempts to
tum dots (QDs) exhibit excellent performance in electronic, energy apply 2D MOF in OSCs (Fig. 5i).
storage, sensors, solar cells, and photonic devices etc. (Qiao et al., 2014;
Ren et al., 2017). The merits of high carrier mobility (≈1000 cm2 V− 1 3.3. HTL and ETL
s− 1), tunable direct band gap, and the intrinsic anisotropy arising from
the puckered structure makes it possible for BP to be used in OSCs As we all know, the work function of 2D material is tunable by
(Batmunkh et al., 2016). Whereas, its poor stability and high-density specific treatment methods (Table 3) (Ma et al., 2017). In 2019, Ouyang
charge traps largely limit further application and engineering opera­ et al. (Yu, Z. et al., 2019) obtained Ti3C2Tx films with various work
tions in photovoltaic devices. The role of BP (QDs) in solar cells and functions by changing the duration of special treatments. As can be seen
other photovoltaic devices has been summarized in detail (Bati et al., from the AFM image, a mono-layered Ti3C2Tx is about 2 nm thick. Ac­
2019; Batmunkh et al., 2018; Lin et al., 2017; Pang et al., 2018). cording to UPS spectra, the work function of Ti3C2Tx can be adjusted in
In 2016, Lau et al. (Lin et al., 2016) firstly reported that solution the range from 4.08 eV to 4.95 eV by UV-ozone (U-MXene) or N2H4 (UH-
exfoliated layered BP can be served as an effective charge extraction MXene) treatment (Fig. 6c). Then they applied Ti3C2Tx with appropriate
layers between active layer and charge transport layer in OSCs. The work functions to PBDB-T:ITIC-based OSCs as HTL or ETL, and the OSCs
optimum thickness of BP flakes prepared by ultrasonic-exfoliation with Ti3C2Tx as ETL and HTL could show a PCE of 9.06% and 9.02%,
method was about 10 nm and the thickness of single atomic layer was respectively. Different special treatments conditions of Ti3C2Tx can
about 0.52 nm (Fig. 5a-b), which could construct cascaded band struc­ affect the VOC of the device, so UVO and N2H4 treatment can change the
ture to boost charge transport and enhance the PCE of OSCs. BPNFs work function (Fig. 6a). When the UVO-treated Ti3C2Tx is used as the
sandwich between ZnO and PTB7:PC71BM in an inverted OSCs. BPNFs ETL, the device structure is ITO/U-MXene/PBDB-T:ITIC/Ca/Al. The JSC
was decorated on PEDOT:PSS or ZnO by spin-coating, and the thickness of 15.98 mA/cm2, the VOC of 0.89 V, and the FF of 64% were obtained,
of charge extraction layer was controlled by coated times. The UPS similar to the commercial PEDOT:PSS-based hole transport material
spectra showed that different spin coating times could change the (Fig. 6b). This is the first application of MXenes in OSCs. Thus, MXenes
valence band (VB) maximum of BP. The PCE of the optimized BP- have more promising applications in organic photovoltaic field.
incorporated OSCs (PTB7:PC71BM) can be improved to 8.18% in PEDOT:PSS is the outstanding and commonly HTL material. Yet, it
average with the relative enhancement of 11%. The optimal OSCs easily corrodes ITO substrate or reacts with active layer, and its hygro­
reached a PCE of 8.25% at three times coating, with FF of 61%, VOC of scopicity is also detrimental to the stability of devices (Wang et al.,
0.72 V, and JSC of 18.8 mA/cm2 (Fig. 5c). It was reported that the 2019). In 2020, to ameliorate the poor conductivity of PEDOT:PSS, Yu
improvement of device performance was attributed to the cascaded et al. (Hou and Yu, 2020) doped solution-processable 2D layered Ti3C2Tx
energy level caused by BP. After two months, the stability of OSCs into PEDOT:PSS to prepare organic–inorganic hybrid material, and
introduced with BPNFs as a charge extraction layer has also been applied it in OSCs as HTL. The introduction of highly conductive Ti3C2Tx
improved, and PCE still remained at the initial 94%. These results nanosheets constructed additional interconnected transfer channels for
indicate that the emerging 2D material BP can be used in high perfor­ holes to enhance the efficient migration of carriers. In the other hand,
mance and stability OSCs as charge extraction layer. the electrostatic interaction between the functional groups of Ti3C2Tx
At present, van der Waals heterostructures cannot be mass-produced, and PEDOT:PSS led to a conformational transition of polymer, which in
which limit its wider application (Liu et al., 2016; Novoselov et al., turn enhanced interchain charge transport (Fig. 6f). Hence, the incor­
2016). In 2019, Wang et al. (Zheng et al., 2019) successfully fabricated poration of 2D Ti3C2Tx nanosheets obviously enhanced the conductivity
GR/MoS2 heterostructures (G-MoS2) by liquid-exfoliated method and of PEDOT:PSS/Ti3C2Tx layer. In particular, the conductivity is 0.068 S/
hydrothermal reaction, which can be proved from the HRTEM image cm when adding 0.20% Ti3C2Tx, which is much higher than that of
(Fig. 5d-e). The work function of newly G-MoS2 heterostructures con­ PEDOT:PSS (2.1 × 10-3 S/cm) alone (Fig. 6d). As expected, a PCE of 11%
taining oxygen-incorporated MoS2 was adjustable (Lopez-Sanchez et al., was obtained for the PBDB-T:ITIC-based OSCs with PEDOT:PSS/
2013), which could remarkably enhance hole extraction efficiency be­ Ti3C2Tx, which was improved by 13.5% compared to control device
tween the electrode and active layer. From the impedance spectrum of without Ti3C2Tx (9.7%). When using the PM6:Y6 blend as the active
the device, it was found that G-MoS2 hybrid film obtained a series layer, the PCE reached to 14.55%, and JSC was significantly improved.
resistance of 45 Ω and device resistance of 470 Ω. It turns out that the Finally, the results showed that PEDOT:PSS/Ti3C2Tx-based devices also
GR-MoS2 heterostructure with high vertical conductivity as HEL boosts had better long-term stability than control device without Ti3C2Tx added
charges transport at the interface, and consequently reduces carrier (Fig. 6e).
recombination. They employ G-MoS2 hybrid thin film as the HEL to Graphene and its derivatives are also widely used as the transport
improve hole transport in OSCs (ITO/G-MoS2/PEDOT:PSS/ P3HT: material in solar cells (Liu et al., 2015). Of late, Li group (Pan et al.,
PC71BM/Ca/Ag). G-MoS2-based device showed a maximum PCE of 9.5% 2019) added N-doped GR to PDINO to prepare a solution-processable
(JSC = 17.2 mA/cm2, VOC = 0.77 V, FF = 72%) (Fig. 5f), whilst retaining material (PDINO-G) as ETL in OSCs (Fig. 7a). In this work, they used
more than 93% of the initial efficiency over a storage period of 1000 h. PDINO as the dispersant for GR to solve the issue that N-doped GR
The results represent the enormous potential of 2D heterostructures as prepared by CVD method had no solution processability. The results of
hole extraction materials for photovoltaic devices. XPS and Raman showed that the source of N-doping was nitroxide
Metal organic frameworks (MOFs) nanoflakes are widely used in radical of N-oxide in PDINO. They optimized device performance by
various fields such as chemical separation and purification, optoelec­ adding different contents of GR to PDINO. From the electron spin
tronics and sensing, etc., yet the exfoliation of 2D MOF nanoflakes is a resonance (ESR) spectroscopy (Fig. 7c-d), it is concluded that the
challenge (Peng et al., 2014; Rodenas et al., 2015). Huang et al. (Xing nitroxide radical in the N-oxide intermolecularly transfer electrons to
et al., 2018) reported that a newly tellurophene-based 2D MOF (Te- graphene and N-doped GR. UPS data found that doping GR reduced the
MOF) to fabricate single or multiple layer nanoflakes by exfoliating. The highest occupied molecular orbital (HOMO) energy level of PDINO
stacked structure with a thickness of 2.7 nm and 1.3 nm thick single (Zhou et al., 2012). As mentioned above, an ideal ETL material must be
nanoflakes were observed by AFM (Fig. 5g-i). The Te-MOF hybrid of low work function and high electron mobility, and could lower the
dispersion solution is directly spin-coated onto ZnO as an EEL. work function of the cathode and transfer electrons from the active layer
Compared to the polyethylenimine ethoxylate-based, the devices exhibit to the cathode efficiently. Therefore, N doping can lower the work
enhanced PCE because of the tunable work function and high charge function of GR, along with accelerating the charge transfer. Transient
carrier mobility characteristics. They introduced 2D-MOF to PBDB-T: photocurrent and transient photovoltage measurement data showed that

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Table 3
The 2D materials are used as charge transport layers in OSCs recently.
2D material Function JSC [mA/cm2] VOC [V] FF [%] PCE [%] Device structure Ref.

BP E/HEL 18.78 0.72 61 8.25 ITO/ZnO/BP/PTB7:PC71BM/MoO3/Ag Lin et al., 2016


GR/MoS2 HEL 17.20 0.77 72 9.50 ITO/G-MoS2/PEDOT:PSS/P3HT:PC71BM/Ca/Ag Zheng et al., 2019
Te-MOF EEL 17.10 0.86 71 10.39 ITO/ZnO/MOF-PEIE/PTBD-T:ITIC-Th/MoO3/Ag Xing et al., 2018
Ti3C2Tx E/HTL 17.36 0.87 60 9.06 ITO/UH-MXene/PBDB-T:ITIC/MoO3/Al Yu et al., 2019
GR or GO E/HTL 25.65 0.85 76 16.52 ITO/PEDOT:PSS-GO/PM6:Y6/PDINO-G/Al Pan et al., 2019
GO HTL 18.07 0.92 73 13.13 ITO/ZnO/PBDB-T:IT-M/L-GO:NiOx/Ag Cheng et al., 2018
RGO ETL 18.61 0.78 65 9.49 ITO/IT-RGO/ZnO:IT-RGO/PTB7-Th:PC71BM/MoO3/Ag Zheng et al., 2017
GR HTL 13.63 0.48 68 4.52 TO/G-PEDOT:PSS/P3HT:PC61BM/Al Hilal and Han, 2019
RGO HTL 13.43 0.70 58 5.50 ITO/n-rGO/PTB7:PC71BM/PFN/FM Romero-Borja et al., 2018
F-RGO HTL 16.89 0.78 65 8.60 ITO/F-rGO/PTB7-Th:PC71BM/PFN/Al Cheng et al., 2017
GO HTL 8.14 0.80 42 2.73 ITO/GO/PCDTBT:PC71BM/Al Rafique et al., 2016
MoS2 HTL 9.02 0.67 62 3.14 ITO/PEDOT:PSS-FMoS2/P3HT:PC61BM/LiF/Al Ramasamy et al., 2019
MoS2 ETL 18.40 0.80 69 10.10 ITO/ZnO:MoS2/PTB7-Th:PC71BM/MoO3/Ag Huang et al., 2018
WS2 HTL 26.00 0.84 78 17.00 ITO/WS2/PM6:Y6:PC71BM/PFN-Br/Al Lin et al., 2019
Ti3C2Tx HTL 17.08 0.91 71 11.02 ITO/PEDOT:PSS@Ti3C2Tx/PBDB-T:ITIC/PFN-Br/Al Hou and Yu, 2020
α-In2Se3 HTL 16.69 0.88 65 9.58 ITO/α-In2Se3/PBDB-T:ITIC/Ca/Al Wang et al., 2019
WSe2 HTL 16.60 0.78 66 8.50 ITO/PEDOT:PSS-WSe2/PTB7:PC71BM/Al Koo et al., 2018
α-In2Se3 HTL 15.47 0.84 74 15.90 ITO/PEDOT:PSS@α-In2Se3/PM6:Y6/PDINO/Al Wang et al., 2020

Fig. 6. (a) Voc varies with the treatment duration. (b) J–V characteristics of PBDB-T:ITIC-based OSCs. (c) UPS spectra of bare ITO, PEDOT:PSS, and MXene thin films
untreated and treated with N2H4. Reprinted with permission from (Z. Yu et al., 2019) Copyright 2019 Royal Society of Chemistry. (d) The conductivities of the
PEDOT:PSS and PEDOT:PSS/Ti3C2TX films on bare glass (AFM image of single-layered Ti3C2TX flakes). (e) Stability of devices with different HTLs based on PBDB-T:
ITIC in a N2 glove box. (f) Schematic illustration of morphological and structural modifications in PEDOT:PSS with the incorporation of Ti3C2TX. Reprinted with
permission from (C. Hou et al., 2019) Copyright 2019 Royal Society of Chemistry.

the effective N-doping in PDINO-G resulted in enhancement of carrier For OSCs, the inverted device is more stable than the conventional.
extraction efficiency. At the same time, the charge extraction time of the C. H. Choy et al. published a self-assembled quasi-3D material as an
device based on PDINO-G and PEDOT:PSS-GO is 0.34 μs, shorter than efficient HTL for inverted OSCs in 2018 (Cheng et al., 2018). It can be
the control device. The efficient charge extraction and longer carrier divided into L-GO and H-GO according to the degree of oxidation. The
lifetime remarkable improved the JSC (19.1 mA/cm2) and FF (74.9%) of results showed that the dispersion of GO could be controlled by
OSCs after the incorporation of GR. The PTQ10:IDIC-2F-based OSCs changing the degree of oxidation to solve the shrinkage of self-
with PDINO-G and PEDOT:PSS-GO as interface material showed the best assembled material caused by highly oxidized GO. The XPS and FTIR
PCE of 13.01%, which was significantly improved in comparison with spectrum confirm the successful synthesis of GO, and Fig. 8a shows the
that of the devices without GR modification in the PDINO (12.23%). As corresponding characteristic peaks of L-GO and H-GO. In this study, they
shown in Fig. 7a, the results indicated that the device performance of developed self-assembled quasi-3D nanocomposite and introduced
OSCs was greatly improved when GR was added to PNINO as ETL. controllable hydrogen bonds between NiOx nanoparticles (NPs) and GO
Notably, the single junction bulk heterojunction OSCs (PM6:Y6) with nanosheets. GO is used as a support for NiOx NPs, and it also enhances
PDINO-G as ETL demonstrated a high PCE of 16.52% (JSC = 25.65 mA/ the conductivity and electron blocking ability of the transport layer. It is
cm2, VOC = 0.85 V, and FF = 76%). worth noting that the conductivity of quasi-3D low oxidized graphene

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Fig. 7. (a) J–V characteristics of the OSCs based on PM6:Y6 (Schematic diagram of graphene with different interfacial materials). (b) Transient photocurrent of the
devices based on PTQ10:IDIC-2F ESR spectra of (c) PDINO and PDINO-G with 5% graphene under OSCs device conditions and (d) PSO and PSO-G with 5% graphene.
Reprinted with permission from (Pan et al., 2019) Copyright 2019 Royal Society of Chemistry.

Fig. 8. (a) C1s XPS FTIR spectrum of GO. (b) PCE of inverted OSCs based on GO and L-GO:NiOx with different thicknesses (inset shows the cross-section SEM). (c)
Schematic illustration of quasi-3D GO:NiOx nanocomposite. Reprinted with permission from (Cheng et al., 2018) Copyright 2018 Wiley. (d) UV–vis spectra of various
ETL. (e) PTB7-Th:PC71BM OSCs with different ETL. (f) Schematic diagram of ITR/ITA process. Reprinted with permission from (Zheng et al., 2017) Copyright 2017
American Chemical Society.

(L-GO):NiOx was increased due to the breaking of the vertical conduc­ ambient environment, the PCE of conventional device rapidly dropped
tivity limitation of traditional 2D materials. Overall, the champion OSCs to 0 while the L-GO:NiOx-based device still remained 50% of its initial
device (ITO/ZnO/PBDB-T:IT-M/HTL/Ag) obtained a PCE of 12.13% value, so the stability of L-GO:NiOx-based device was also obviously
(JSC = 18.07 mA/cm2, VOC = 0.92 V, FF = 73%), which was a 15% improved.
improvement as compared control device (Fig. 8b-c). After 164 h in Generally, graphene and it is derivatives such as GO, reduced

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graphene oxide (R-GO) etc. have been proved as the promising additives 2016). 2D TMDs nanosheets also have been extensively studied and
with ZnO to form ETL. In 2017, Yu et al. (Zheng et al., 2017) successfully applied to a variety of photovoltaic devices thanks to their fabulous
synthesized ZnO:R-GO hybrid material by utilizing dual-nozzle spray electrical and optical properties. It is found that lone pairs of electrons
coating system and applied it in inverted OSCs (Fig. 8f). This novel on the surfaces of TMDs, the presence of non-covalent interaction and
method could precisely control the film thickness of the ETL, and dangling bonds could enhance their chemical stability (Gu et al., 2013;
reduced GO to in-situ thermal reduced graphene oxide (IT-RGO) while Voiry et al., 2013; Wang et al., 2012). Hence, 2D TMDs nanosheets are
GO is assembled on ZnO. The conductivity values of GO, R-GO, and IT- expected to solve the issue of instable OSCs. In nonfullerene-based OSCs,
RGO are calculated as 2.12 × 10− 4 S/m, 7.33 × 10− 4 S/m, and 7.85 × the application of liquid-exfoliated 2D TMDs as the charge transport
10− 4 S/m, respectively. It is obvious that hybrid ZnO:IT-RGO exhibit a layers has been reported. In 2019, Kim et al. reported oleylamine-
better conductivity than the bare ZnO, due to the incorporation of highly functionalized MoS2 (F-MoS2) nanoflakes by common solution-phase
conductive IT-RGO. In addition, the light absorption intensity of ZnO: exfoliation (Ramasamy et al., 2019). Subsequently, PEDOT:PSS/F-
GO and ZnO:IT-RGO were slightly increased in the visible region MoS2 was prepared and used as a high-efficiency HTL for P3HT:PC61BM-
compared with bare ZnO (Fig. 8d). The device based on IT-RGO/ZnO:IT- based OSCs. The results showed that the hybrid film has good compat­
RGO show higher conductivity of 7.17 × 10− 4 S/m than reference ZnO, ibility with others, and the OSCs with PEDOT:PSS/F-MoS2 obtained a
which is favorable for boosting electron transport and suppressing PCE of 3.74%.
charge recombination. The OSCs with ZnO:IT-RGO hybrid ETL and thin Xie et al. introduced four hydroxy (–OH) groups into perylene bisi­
IT-RGO baseplate exhibited the highest PCE of 9.49% (JSC = 18.4 mA/ mide (PBI) to form PBI-OH ligands, which could complex Zn (II) ions
cm2, VOC = 0.78 V, and FF = 65%) in PTB7-Th:PC71BM system (Fig. 8e), (PBI-OH:ZnO) after deprotonation (Wen et al., 2019). The PBI-OH:ZnO
which was higher than that using pristine ZnO (PCE = 8.02%). Similarly, hybrid film effectively promotes electron collection and transport.
Han et al. (Hilal and Han, 2019) doped the pristine GR with PEDOT:PSS However, the compatibility of the polymer with the inorganic transport
to prepared a conductive polymer composite. They used this material as layer is not ideal. In 2018, Wei et al. (Yi-Jiun Huang et al., 2018) pre­
the HTL of OSCs, which improved the performance of the device. pared ZnO:MoS2 hybrid material by doping MoS2 nanoflakes into ZnO
Thermally RGO implemented in air processed OSCs as HTL were sol–gel, which was used as ETL in OSCs based on PTB7-Th:PC71BM. It
reported by Pérez-Gutiérrez et al. in 2018. (Romero-Borja et al., 2018) turned out that varied amounts of MoS2 would change the energy band
RGO layers were fabricated via spin-deposition and thermal reduction of structure of the ZnO:MoS2 hybrid film. It is found that doping a small
GO after each deposition. A PCE of 5.5% was obtained with the device content of MoS2 into ZnO could optimize the morphology of transport
structure of ITO/HTL/PTB7:PC71BM/PFN/FM, which was as high as layer, and improved the FF (69%) and PCE (10.1%) of device (Fig. 9c).
that for control devices based on PEDOT:PSS (Fig. 9a). Chen et al. Simultaneously, The charge mobility calculated by the space charge
(Cheng et al., 2017) prepared a RGO film functionalized with fluorine limited current (SCLC) showed that the electron mobility (μe) increased
atoms as a HTL material for OSCs. The introduction of fluorine atoms remarkably upon increasing the MoS2 content, and the highest value
increased work function of GO due to high electronegativity. The result (1.86 × 10-4 cm2 V-1s− 1) appeared when 0.5 wt% MoS2 is added (Blom
shows C = C bonds in GO oxide after reduction enhances the conduc­ and Vissenberg, 2000). The surface defects of film decreased with the
tivity of F-rGO compare to pure GO. Hence, the OSCs with F-rGO ob­ MoS2 content increased, thereby improving the charge transfer and
tained a PCE of 8.6%, along with long-term stability, and even superior reducing the leakage current. (Yi-Jiun Huang et al., 2018). Concretely,
to the control device. In 2016, Sulaiman et al. (Rafique et al., 2016) the PTB7-Th:PC71BM-based OSCs with ZnO:MoS2 obtained a PCE of
reported the solution-processable GO with varied concentration as HTL 10.1%, which was 15% higher than the control device. Similarly, Wei
for bulk heterojunction OSCs. This paper mainly discussed the influence et al. (Xie et al., 2019) also doped MoS2 QDs into ZnO to passivate
of HTL concentration and thickness on the whole device. surface defects, aimed to promote electron extraction and suppress
Similar to GR, 2D-TMDs can be synthesized in monolayer or few charge recombination.
layer morphologies by a physical or chemical method (Balis et al., Recently, D. Anthopoulos et al. (Lin et al., 2019) published on the use

Fig. 9. (a) OSCs parameters for each content of SPFG. Reprinted with permission from (Romero-Borja et al., 2018) Copyright 2018 Elsevier. (b) Device configuration
and crystal structure of α-In2Se3. Reprinted with permission from (Wang et al., 2019) Copyright 2019 Wiley. (c) Schematic representation of doping ZnO with MoS2
nanosheets. Reprinted with permission from ( Huang et al., 2018) Copyright 2018 American Chemical Society. (d) Device configuration and schematic of PEDOT:
PSS@α-In2Se3. Reprinted with permission from (Wang et al., 2020) Copyright 2020 American Chemical Society.

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of liquid–exfoliated WS2 and MoS2 as HTL to replace PEDOT:PSS in mobility (μh) and JSC of α-In2Se3-OSCs are 3.44 × 10-4 cm2 V− 1 s− 1 and
high-efficiency OSCs. The results showed that both WS2 and MoS2 dis­ 16.69 mA/cm2, respectively. After long-term stability test in air envi­
persions had high uniformity. (Lin et al., 2019). The AFM and trans­ ronment, it showed that α-In2Se3-based device could maintain half of
mission electron microscopy (TEM) characterization showed that the initial PCE after 48 h, while the control device dramatically decreased to
exfoliated nanoflakes of MoS2 were thicker than WS2 and easily formed only 3.71% of its initial value. They concluded that the incorporation of
more multilayer flakes when spin-coated, which resulted in ITO/WS2 α-In2Se3 HTL obviously enhanced the long-term stability of OSCs. In
mainly consists of monolayer/bilayer sheets. The water/ethanol sus­ 2018, in order to improve the charge transfer efficiency, Park et al. (Koo
pensions of WS2 and MoS2 nanoflakes were dark yellow colloids, and et al., 2018) blended WSe2 and PEDOT:PSS as HTL for fullerene-based
both showed similar UV absorption spectra (Fig. 10a). Obviously, the OSCs.
HTL comprising WS2 has higher uniformity than MoS2 on ITO sub­ In 2020, Yu et al. (Wang et al., 2020) also synthesized 2D α-In2Se3
strates, hence the difference of local morphology can result in differ­ nanoflakes with outstanding conductivity. They directly blended
ences in the performance of the entire device. They studied liquid- different amounts of α-In2Se3 into PEDOT:PSS to prepare hybrid film
exfoliated WS2 and MoS2 as HTL in OSCs and comprehensively char­ with superior transmittance and matched work function. Compared with
acterized them. Device analysis showed that using WS2 as HTL in non- PEDOT:PSS, PEDOT:PSS@α-In2Se3 hybrid film as HTL has better con­
fullerene-based OSCs could improve PCE. It is turned out that ductivity and hole selective ability. The incorporation of α-In2Se3
although the work function of MoS2 was similar to WS2, the unevenness nanoflakes as physical linkers increased the interfacial contact area
of the MoS2 layer reduced the hole transport ability, resulting in carrier between polymer chains and constructed more carrier transport
recombination (Fig. 10b) (Lin et al., 2019). In Fig. 10c-d, OSCs based on pathway. Moreover, α-In2Se3 and isopropyl alcohol/deionized water
the ternary PM6:Y6:PC71BM with WS2 as the HTL showed the highest synergistically produced a screening effect on PEDOT and PSS, which
PCE of 17% (JSC = 26 mA/cm2, VOC = 0.84 V, and FF = 78%). After led to the partial removal of PSS and the benzoid-quinoid transition of
detailed characterization and analysis, it is shown that the significantly PEDOT (Fig. 9d). When the doping concentration was 0.15 wt%, the
enhanced PCE was most likely attributed to superb photonic structure, PBDB-T:ITIC-based OSCs device with PEDOT:PSS@α-In2Se3 obtained
high charge extraction efficiency and reduced bimolecular recombina­ the highest PCE (11.22%), which was mainly attributed to faster exciton
tion losses. Finally, this work highlighted the potential of 2D TMDs as generation and charge exaction, as well as less charge recombination.
low-cost HTLs for high-efficiency organic photovoltaics in the future. They fabricated PM6:Y6-based devices to explore the validity of PEDOT:
In 2019, the use of solution-processable 2D α-In2Se3 prepared by PSS@α-In2Se3 material. The optimized device reached an enhanced PCE
liquid-exfoliated method as an HTL in OSCs was reported by Yu et al. of 15.89%, with a JSC of 25.47 mA cm− 2, an VOC of 0.84 V, and a FF of
(Wang et al., 2019). α-In2Se3 layer can boost hole transport efficiency 74%. Same as 2D α-In2Se3 for HTL (Wang et al., 2019), PEDOT:PSS@α-
due to suitable work function, remarkable optoelectronic properties, In2Se3 also has better operation stability than PEDOT:PSS.
and smooth surface morphology. A high PCE of 9.58% was obtained
with the device structure of ITO/α-In2Se3/PBDB-T:ITIC/Ca/Al (Fig. 9b),
which was comparable to PEDOT:PSS-based device (9.50%). The hole

Fig. 10. (a) Absorption spectra of the as-prepared MoS2 and WS2 suspensions (inset image demonstrates the Tyndall effect in both WS2 and MoS2 dispersions). (b)
The work function of ITO and various HTLs deposited on ITO measured via the Kelvin Probe technique and calculated via the DFT method. (c) J–V and (d) EQE
characteristics of OSCs based on PBDB-T-2F:Y6 and PBDB-T-2F:Y6:PC71BM with different HTLs. Reprinted with permission from (Lin et al., 2019) Copyright
2019 Wiley.

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3.4. Additives for active layer improvement of PCE was obtained when BPQDs were added up to
0.055%, which was mainly attributed to the effect of strong light ab­
Currently, the ternary OSCs has attracted intensive attention in the sorption and scattering of the BPQDs (Liu et al., 2017; Lu et al., 2013).
OSCs filed owing to wide spectral absorption range and high charge Simultaneously, it could be seen from Fig. 11b that BPQDs of different
transfer efficiency (Duan et al., 2019; Fu et al., 2019; Gao et al., 2019; nanosize also produced different degrees of light absorption and scat­
Jin et al., 2019). The research on ternary devices has also became a hot tering effects in the active layer. As a result, when 4.5 nm BPQDs were
topic in the development of OSCs (Gasparini et al., 2019). It is reported added to the OSCs based on PBDTTT-EFT:PC71BM, the champion device
that the introduction of 2D materials as the third additive to OSCs could obtained a PCE of 10.1% with JSC of 19.3 mA/cm2, VOC of 0.76 V, and FF
effectively enhance device performance. 2D materials can broaden ab­ of 69% (Fig. 11a). Interestingly, the weight percentage of BP added to
sorption range of spectrum of the active layer, enhance the light ab­ OSCs is much lower than that of organic additives, which is mainly
sorption ability, optimize the energy level matching, as well as improve thanks to the unique 2D structural properties as well as the strong broad
the morphological stability of the devices during the aging period band light absorption and scattering in active layers.
(Zhang et al., 2016). In 2017, Kymakis et al. (Stylianakis et al., 2017) In 2017, Zhao et al. (Bai et al., 2017) successfully prepared solution
comprehensively reviewed the progress implemented by the application treated BP/PC61BM inorganic–organic hybrid heterojunction for OSCs.
of 2D materials in the field of blend BHJ ternary OSCs for the first time. It In this study, they doped BP on the surface of the organic semiconductor,
was proved that 2D materials had great potential to be used in OSC as and used the different morphologies of PC61BM to form various heter­
additives. Herein, we summarized the application of promising 2D ostructures as active layer through different synthesis routes (Fig. 11c).
materials as additives in OSCs recently. More importantly, BP/PC61BM makes the device have wider absorption
In 2017, Yan et al. successfully proposed the utilization of black range spectrum and more suitable energy level matching, along with the
phosphorus quantum dots (BPQDs) as an additive in OSCs to boost the average PCE of the solar cells reach 6.4% and 8.0% using the hybrid with
light harvesting (Liu et al., 2017). In this work, various sizes of BPQDs the layered stacking and the doping-weaving structure. In order to fully
were prepared by tuning the centrifugation rates. Assuming the expan­ evaluate the photovoltaic performanc, the long-term thermal stability of
sion of band levels of BPQDs is same, from the photoluminescence (PL) the two BP/PC61BM heterojunctions was tested in this work. The results
spectral data, it can be estimated that the valence and conduction band showed that devices with BP/PC61BM displayed excellent thermal sta­
of BPQDs are 5.32 eV and 3.32 eV, respectively, and Eg is approximately bilities, and the PCE exhibited a decreasing tendency and dropped to
2 eV. The OSCs with PTB7:PC71BM as the active layer was optimized by 7.55% at 150 ◦ C on annealing for 3 days.
changing the nanosize and the amount of BPQDs. Significant As we all know, 2D BP nanosheets are very expensive and hard to

Fig. 11. (a) J–V characteristics of the best control device and the devices with various addition levels of BPQDs. (b) UV–vis absorption of PTB7:PC71BM layer with
the introduction of BPQDs of different sizes. Reprinted with permission from (Liu et al., 2017) Copyright 2017 Wiley. (c) Schematic of a BP/PCBM-based solar cell:
atomic structure of BP in layered stacking and the chemical structure of PCBM. Reprinted with permission from (Bai et al., 2017) Copyright 2017 Royal Society
of Chemistry.

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prepare (Sun, Z. et al., 2015). However, Liu et al. produced BP from with slight improvement of VOC and FF, and stabilities were improved
inexpensive white phosphorus via a one-step solvothermal method for both BP and WSe2 devices. PTB7-Th:PC71BM-based OSCs with BP or
(Zhao et al., 2018). In this work, the 10 wt% BP prepared by the above WSe2 as additive obtained PCE of 9.20% and 9.24%, respectively.
method was added to the PTB7-Th:PC71BM active layer, and the FF and The 2D materials with different sizes would provide varied portions
PCE of the OSCs reached an impressive 74.2% and 10.5%, respectively of the basal plane, and it was expected that the nanoscale domains size of
(Fig. 12a). Compared with the binary devices without BP, PCE is the various components of the blend would significantly impact the
significantly improved by 20%, mainly due to the high charge mobility performance of the OSCs. Hence, the size distributions of 2D layered
of BP. Detailed characterization showed that despite the existence of materials affect the dispersion stability and morphological aggregation
heterogeneity, BP had little effect on the phase separation and crystal­ of the BHJ layer, yet there is no substantive evidence on the interplay
linity of the active layer (Fig. 12b) (Bai et al., 2017; Lee et al., 2019; between the size of 2D crystals and active layer. In 2019, Cho et al. (Kim
Zhao et al., 2018), yet it still enhanced carrier migration. et al., 2019) used sonication method to fabricate different sizes of GO
Morphology of bulk heterojunction blend film is of great signifi­ and added it to active layer (PTB7:PC71BM). In this work, they studied
cance. In 2019, Chen group used BP nanosheets as a morphology mod­ the mechanism of the effect of different 2D materials sizes on the per­
ifier and blended it with the active layer (PTB7-Th:IEICO-4F) (Yang, W. formance of the device. It is found that size-selected GO nanosheets
et al., 2019a). The Raman spectrum presented three characteristic could boost charge transport and reduce non-geminate recombination
peaks, confirming the successful preparation of BPNFs. The inverted (Fig. 12e). The introduction of GO also improved the morphology of the
OSCs based on PTB7-Th:IEICO-4F blends incorporating with BP reached active layer greatly, and the FF of conventional and inverted devices
a high FF (73%) and PCE (12.2%). They studied the morphological reached 70% and 69.4%, respectively (Fig. 12d). In 2018, Pérez-
thermal stability of device doped with BP by thermal treatment at 150 ◦ C Gutiérrez et al. (Romero-Borja et al., 2018) incorporated the function­
in glove box. Finally, the PCE still remained initial 73% after thermal alized graphene (SPFG) as a third component in the active layer. They
treatment for over 200 min, and the thermal stability was significantly prepared ternary active layers by blending SPFG with PTB7:PC71BM,
improved compared to the control device. Thus, they rationally varying the amounts of SPFG to optimize the device. The results showed
concluded that the embedded BP enhanced the morphological stability that the optimal doping amount was 4 wt%, the enhancement in PCE for
of the OSCs by maintaining proper phase separation during the aging a ternary system was 22% (PCE = 6.73%) compared to control device.
period. Moreover, this work also embeded BP into other non-fullerene Similarly, A. Mahmoud et al. (Aïssa et al., 2018) doped GR nanoflakes
systems for versatility testing. Applying BP to PBDB-T:ITIC system also into P3HT:PC71BM as photoactive blended layers. The above experi­
showed remarkable results, which demonstrated BP has been widely mental results showed that the additive of GR enhanced light absorption
used as morphology modifier in non-fullerene OSCs. Similarly, they also and promoted charge transfer.
used solution exfoliated few layers BP or WSe2 as third additives in 2017, Bonaccorso et al. (Kakavelakis et al., 2017) found that the
fullerene-based BHJ OSCs in 2019 (Yang, W. et al., 2019b). PL spectra performance of the device could be improved more effectively by
and EIS measurements revealed that BP and WSe2, as third additive, matching the size of 2D WSe2 crystals with that of the PC71BM domain in
obviously boosted the exciton dissociation and charge transfer. As a active layer. As shown in schematic energy levels, WSe2 exhibited well
result, the JSC of the device based on BP and WSe2 was enhanced from energy level matching and formed a cascaded band structure in ternary
16.36 mA/cm2 to 17.34 mA/cm2 (BP) and 17.54 mA/cm2 (WSe2), along OSCs (Fig. 12c). The OSCs device (ITO/PFN/PTB7:PC71BM:WSe2/

Fig. 12. (a) J–V characteristics of the OSCs based PTB7-Th:PC71BM@BP. (b) AFM height image for ternary film (inset is molecular structures of PTB7-Th, PC71BM,
and BP). Reprinted with permission from (Y. Zhao et al., 2019) Copyright 2018 Elsevier. (c) Schematic energy levels of the inverted devices. Reprinted with
permission from (Kakavelakis et al., 2017) Copyright 2017 American Chemical Society. (d) J − V characteristics of the PTB7:PC71BM inverted devices based on
photoactive layers prepared with various sized GO NSs, DIO, and NMP. (e) Hole and electron mobilities measured from SCLC devices. Reprinted with permission from
(Kim et al., 2019) Copyright 2019 American Chemical Society. (f) Energy level diagrams of hole − only and electron − only devices. Reprinted with permission from
(Ahmad et al., 2017) Copyright 2017 American Chemical Society.

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MoO3/Al) obtained PCE of 9.3%(JSC = 19.68 mA/cm2, VOC = 0.73 V, and The incorporation of 2D materials as the third additive to the active
FF = 72%), which was 15% higher than standard binary devices (PCE = layer can generate improvements and synergetic effects such as the
8.1%). The improvement is mainly due to the enhanced exciton gener­ improved crystallinity of the polymer, more effective carrier migration,
ation and dissociation at the WSe2-fullerene interface. In other work, and the enhanced light trapping ability. Besides, 2D layered materials
Srivastava et al. (Ahmad et al., 2017) incorporated the functionalized 2D produce energy cascade effect to promote charge transfer in the active
MoS2 into the ternary polymer solar cells to realize the long-range layer. However, introducing 2D materials in active layer complicates the
ordering of polymer chains induced by 2D materials on charge trans­ operational principle and increases the thickness, which increases the
port. The results showed that a synergic enhancement in JSC and FF of cost of industrialization. At the same time, it is unclear to explain how
MoS2 incorporated active layer led to an increase of about 32% in PCE 2D materials affect the crystallinity and interface morphology of the
(3.7%) compared to control device. The higher electron mobility is active layer. In conclusion, the incorporation of the unique properties of
attributed to the highly conducting 2D network of MoS2 which provides 2D layered materials inside the active layer opens up a promising
additional electron transport channels within the active layer (Fig. 12f). pathway in the design and construction of high effective and low-cost
It can be concluded from the above, both inorganic 2D materials and solar cells.
organic non-fullerene acceptors have their own advantages and limita­
tions. In 2020, in order to combine advantages of both inorganic and 4. Conclusion and outlook
non-fullerene materials, Zhan et al. (Wang, Y. et al., 2020) applied
perovskite quantum dots (PQDs) in non-fullerene-based OSCs (Fig. 13). Herein, the developments of the OSCs based on different emerging
CsPbI3 QDs was added to PTB7-Th:FOIC as the third additive, and the 2D layered materials were summarized. We explored the role of these 2D
JSC of OSCs devices significantly increased from 23.8 mA/cm2 to 25.0 materials in OSCs through their own upsides by sorting out the above
mA/cm2. From the experimental data measured by the time-resolved work. It turns out that the incorporation of 2D materials to device shows
photoluminescence (TRPL), the average decay time of the blend film enormous and efficient effect on operating stability and performance of
with PQDs was 0.707 ns, which was shorter than the blend film without OSCs. Moreover, 2D materials are used in different components of OSCs
PQDs (0.858 ns). It indicated faster charge transfer and exciton sepa­ due to excellent transport characteristics and high tunability in struc­
ration, which could be partly due to the formation of a cascade energy ture. 2D materials can be solution-processed like organic polymers to
alignment in the PQDs hybrid blend. In addition, it was found that prepare uniform thin films, so they can effectively modify and optimize
nonradiative recombination voltage loss was reduced by measuring the the interface of the device structure, which is of great significance for
external quantum efficiency (EQEEL) of solar cells with CsPbI3 QDs. The reducing future commercial manufacturing costs (Table 4) (Garg et al.,
nonradiative energy loss of OSCs with CsPbI3 was only 0.295 eV, mainly 2016; Qin et al., 2014).
due to the strong fluorescence of QDs. Finally, the PCE of PM6:Y6-based Despite the obvious upsides of 2D materials, there are still many
OSCs with CsPbI3 QDs (ITO/ZnO/PM6:Y6@PQDs/MoO3/Ag) reached challenges to be solved in the application of OSCs. It can be seen from
the highest 16.8%, similar to the record PCE of the perovskite QDCSs the currently published articles that the nanoscale and number of layers
(16.6%) (Hao et al., 2020). Perovskite materials could also be prepared of 2D materials determine their optical and electronic properties, which
into 2D structures, so it might have broad application prospects in OSCs. have different effects on photovoltaic devices. Currently, the reported

Fig. 13. (a) Energy level diagram of PTB7-Th:FOIC:PQDs. (b) TRPL spectra of PTB7-Th:FOIC blends with or without PQDs. (c) J–V and (d) EQEEL curves of PTB7-Th:
FOIC-based cells with or without PQDs (inset is HR–TEM image of PQDs). Reprinted with permission from (Wang et al., 2020) Copyright 2020 Wiley.

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Y. Zhao et al. Solar Energy 218 (2021) 621–638

Table 4 efficient and stable large-area OSCs.


The best-performing OSCs employing emerging 2D materials.
Materials JSC VOC FF PCE Device structure Declaration of Competing Interest
&Function [mA/ [V] [%] [%]
cm2] The authors declare that they have no known competing financial
BP—additive 23.44 0.71 70 12.20 ITO/ZnO/PTB7-Th: interests or personal relationships that could have appeared to influence
IEICO-4F@BPNFs/ the work reported in this paper.
MoO3/Ag
Ti3C2Tx—E/HTL 17.36 0.87 60 9.06 ITO/UH-MXene/
PBDB-T:ITIC/MoO3/ Acknowledgements
Al
Ti3C2Tx—electrode 14.84 0.88 63 8.30 MX@AgNW-PUA/ The authors are deeply grateful to the National Key Research and
PEDOT:PSS/PBDB-T: Development Program of China (2019YFC0312101), Natural Science
ITIC:PC71BM/PDINO/
Al
Foundation of Shandong Province (ZR2018MEM023), the Fundamental
Te-MOF—EEL 17.10 0.86 71 10.39 ITO/ZnO/MOF-PEIE/ Research Funds for Central Universities (201822002), State Key Labo­
PTBD-T:ITIC-Th/ ratory of Marine Coatings (GZ-19-0002) and Open Fund of the State Key
MoO3/Ag Laboratory of Luminescent Materials and Devices (South China Uni­
GR—electrode 25.80 0.85 70 15.20 PI@GR/PEDOT:PSS/
versity of Technology, 2021-skllmd-11). The authors also thank Miss
PM6:Y6/PDINO/Al
GR/MoS2—HTL 17.20 0.77 72 9.50 ITO/G-MoS2/PEDOT: Xiaojie Liu for her critical reading of the manuscript.
PSS/P3HT:PC71BM/
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