NPN BJT COMMON EMITTER

CHARACTERISTICS

Experiment no. Date:

AIM

To study input and output characteristics of a NPN Bipolar Junction

Transistor (BJT) in Common-emitter configuration.

SOFTWARE REQUIRED: LTspice software

THEORY & CIRCUIT DIAGRAM

Fig. BJT in CE configuration

The transistor is a two junction, three terminal semiconductor device which has three
regions namely the emitter region, the base region, and the collector region. There are
two types of transistors. An NPN transistor has an n type emitter, a p type base and an n
type collector while a PNPtransistor has a p type emitter, an n type base and a p type
collector. The emitter is heavily doped, base region is thin and lightly doped and collector
is moderately doped and is the largest. The current conduction in transistors takes place
due to both charge carriers- that is electrons and holes and hence they are named Bipolar
Junction Transistors (BJT).

INPUT CHARACTERISTICS:

It is the curve between input current IB and input voltage VBE constant collector emitter
voltage VCE. The input characteristic resembles a forward biased diode curve. After cut
in voltage the IB increases rapidly with small increase in VBE. It means that dynamic
input resistance is small in CE configuration. It is the ratio of change in VBE to the
resulting change in base current at constant collector emitter voltage. It is given by ΔVBE
/ ΔIB

Fig. Input characterics Vbe vs Ib with constant collector voltage

Output Characteristics:

This characteristic shows relation between collector current IC and collector voltage for
various values of base current. The change in collector emitter voltage causes small
change in the collector current for the constant base current, which defines the dynamic
resistance and is given as ΔVCE / ΔIC at constant IB. The output characteristic of
common emitter configuration consists of three regions: Active, Saturation and Cut‐off.
PRATICAL PROCEDURE

• Open a new file

• Select components and draw the circuit as per above
• Connect the components using the connector
• Save the file
• Edit simulate cmd
• Choose DC sweep
• Run the file
• Results will be displayed

INPUT CHARACTERISTICS
1)Make the circuit connection as shown in the circuit diagram.
2)Set the voltage VCC = 20 V and vary IB with the help of VBB and measure
VBB. 0 to 1 step size as 0.01
4)Plot graph of IB v/s VBB. By clicking on current Ib (base terminal)
OUTPUT CHARACTERISTICS
1)Make the circuit connection as shown in the circuit diagram.
2)Set the voltage VBB = 5V and vary IC with the help of VCC and measure 0
to 2 step size as 0.5
4)Plot graph of Ic v/s VCC. By clicking on current IC(base terminal)

RESULT & INFERNCES

The input and OUTput characteristics of BJT(BC547B) was verified and

studied.
MOSFET COMMON SOURCE CHARACTERISTICS

Experiment no. Date:

AIM : To study the drain and transfer characteristics of MOSFET

APPARATUS: LTSPICE software

THEORY AND DIAGRAM:

A MOSFET is a four-terminal device having source(S), gate (G), drain (D) and body (B)
terminals. In general, The body of the MOSFET is in connection with the source terminal
thus forming a three-terminal device such as a field-effect transistor. MOSFET is
generally considered as a transistor and employed in both the analog and digital circuits.

nMOSFET before channel formation

 nMOSFET structure after channel formation

When no voltage is applied between gate and source, some current flows due to the
voltage between drain and source. Let some positive voltage be applied at VGS. Then the
minority carriers i.e. holes, get repelled and the majority carriers i.e. electrons get
attracted towards the SiO2 layer. With some amount of positive potential at VGS a certain
amount of drain current ID flows through source to drain. When this positive potential is
further increased, the current ID increases due to the flow of electrons from source and
these are pushed further due to the voltage applied at VGS. Hence the more positive the
applied VGS, the more the value of drain current ID will be. The current flow gets
enhanced due to the increase in electron flow better than in depletion mode. Hence this
mode is termed as Enhanced Mode MOSFET.

Fig.N-Channel MOSFET in enhancement mode

DRAIN CHARACTERISTICS: The drain characteristics of a MOSFET are drawn

between the drain current ID and the drain source voltage VDS . When VDS is increased,
the drain current ID should increase, but due to the applied VGS , the drain current is
controlled at a certain level. Hence the gate current controls the output drain current.
TRANSFER CHARACTERISTICS: Transfer characteristics define the change in the
value of VDS with the change in ID and VGS in both depletion and enhancement modes.

PRACTICAL PROCEDURE:
● Open a new file
● Select components and draw the circuit as per above
● Connect the components using the connector
● Save the file
● Edit simulate cmd
● Choose DC sweep
● Run the file
● Results will be displayed

DRAIN CHARACTERISTICS:
1)Make the circuit connection as shown in the circuit diagram.
2)Set the voltage VGS = 10 V and vary ID with the help of VGS and measure VDS 0 to
20 step size as 0.1 3)Plot graph of IDv/s VDS . By clicking on the current ID.
 TRANSFER CHARACTERISTICS:
1)Make the circuit connection as shown in the circuit diagram.
2)Set the voltage VDS = 20V and vary the ID with the help of VGS and measure 0 to 10
step size as 1.
3)Plot graph of ID v/s VGS . By clicking on the current ID.

RESULT & INFERENCES: The Drain and Transfer characteristics of MOSFET were
verified and studied.