ISP817X, ISP827X, ISP847X

ISP817, ISP827, ISP847

HIGH DENSITY MOUNTING

PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS

APPROVALS ISP817X
2.54 Dimensions in mm
l UL recognised, File No. E91231 ISP817

'X' SPECIFICATION APPROVALS 7.0 1 4

l VDE 0884 in 3 available lead form : - 6.0 2 3
- STD
- G form 1.2
- SMD approved to CECC 00802
l Certified to EN60950 by the following 5.08 7.62
Test Bodies :- 4.08 4.0
Nemko - Certificate No. P96102022 3.0
Fimko - Registration No. 192313-01..25 13°
0.5 Max
Semko - Reference No. 9639052 01
3.0 0.26
Demko - Reference No. 305969 3.35
ISP827X 0.5
DESCRIPTION ISP827
The ISP817, ISP827, ISP847 series of optically 2.54
1 8
coupled isolators consist of infrared light
2 7
emitting diodes and NPN silicon photo
7.0 3 6
transistors in space efficient dual in line plastic 6.0
packages. 4 5
FEATURES 1.2
l Options :- 10.16 7.62
10mm lead spread - add G after part no. 9.16 4.0
Surface mount - add SM after part no. 3.0
Tape&reel - add SMT&R after part no. 0.5 13°
l High Current Transfer Ratio (50% min) Max
3.0
l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 0.26
3.35
l High BVCEO ( 35Vmin ) 0.5
l All electrical parameters 100% tested 1 16
l Custom electrical selections available 2 15
ISP847X
APPLICATIONS 14
ISP847 3
l Computer terminals
l Industrial systems controllers 2.54 4 13
l Measuring instruments 5 12
l Signal transmission between systems of 6 11
7.0
different potentials and impedances 6.0
7 10
OPTION SM OPTION G
SURFACE MOUNT 7.62 1.2 8 9
20.32 7.62
19.32 4.0
3.0
1.2 1.4
0.6 13°
0.9 0.26 0.5 Max
10.2
9.5 10.16 0.26
3.0 0.5 3.35

ISOCOM COMPONENTS LTD ISOCOM INC

Unit 25B, Park View Road West, 1024 S. Greenville Ave, Suite 240,
Park View Industrial Estate, Brenda Road Allen, TX 75002 USA
Hartlepool, TS25 1YD England Tel: (01429)863609 Tel: (214) 495-0755 Fax: (214) 495-0901
Fax : (01429) 863581 e-mail sales@isocom.co.uk e-mail info@isocom.com
http://www.isocom.com http://www.isocom.com

26/7/99
DB92275A-AAS/A2
 ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C

Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA

Reverse Voltage 6V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO 35V

Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 200mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BVCEO) 35 V IC = 1mA

( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V IE = 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 20V

Coupled Current Transfer Ratio (CTR) (Note 2)

ISP817, ISP827, ISP847 50 600 % 5mA IF , 5V VCE
ISP817A,ISP827A,ISP847A 80 160 % 5mA IF , 5V VCE
ISP817B,ISP827B,ISP847B 130 260 % 5mA IF , 5V VCE
ISP817C,ISP827C,ISP847C 200 400 % 5mA IF , 5V VCE
ISP817D,ISP827D,ISP847D 300 600 % 5mA IF , 5V VCE
ISP817GB, ISP827GB, ISP847GB 100 600 % 5mA IF , 5V VCE
ISP817BL, ISP827BL, ISP847BL 200 600 % 5mA IF , 5VVCE

Collector-emitter Saturation VoltageVCE (SAT) 0.2 V 20mA IF , 1mA IC

Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

26/7/99 DB92275A-AAS/A2
 Collector Power Dissipation vs. Ambient Temperature Collector-emitter Saturation
Voltage vs. Forward Current

Collector-emitter saturation voltage V CE(SAT) (V)

200

10mA
15mA
=1mA
3mA
5mA
6
Collector power dissipation P C (mW)
5 TA = 25°C

Ic
150
4

100 3

2
50
1

0 0
-30 0 25 50 75 100 125 0 5 10 15
Ambient temperature TA ( °C ) Forward current IF (mA)

Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage

60
50mA TA = 25°C
50
50 30mA
Forward current I F (mA)

20mA
Collector current I C (mA)

40
40 15mA
30
30 10mA

20
20

10 10 IF = 5mA

0 0
-30 0 25 50 75 100 125 0 2 4 6 8 10
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Collector-emitter Saturation Current Transfer Ratio vs. Forward Current

Collector-emitter saturation voltage V CE(SAT) (V)

Voltage vs. Ambient Temperature

0.14 320

0.12 280
Current transfer ratio CTR (%)

IF = 20mA
0.10 IC = 1mA 240

200
0.08
160
0.06
120
0.04
80 VCE = 5V
0.02 TA = 25°C
40
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

26/7/99
DB92275A-AAS/A2
This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.