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January 2014
FSQ510 / FSQ510MX
Green Mode Fairchild Power Switch (FPS™)
for Valley Switching Converter – Low EMI and High Efficiency
Features Description
Uses an LDMOS Integrated Power Switch A Valley Switching Converter (VSC) generally shows
lower EMI and higher power conversion efficiency than
Optimized for Valley Switching Converter (VSC) a conventional hard-switched converter with a fixed
Low EMI through Variable Frequency Control and switching frequency. The FSQ510 is an integrated
Inherent Frequency Modulation Valley Switching Pulse Width Modulation (VS-PWM)
controller and SenseFET specifically designed for
High Efficiency through Minimum Drain Voltage offline Switch-Mode Power Supplies (SMPS) for valley
Switching switching with minimal external components. The VS-
Extended Valley Switching for Wide Load Ranges PWM controller includes an integrated oscillator, under-
voltage lockout (UVLO), leading-edge blanking (LEB),
Small Frequency Variation for Wide Load Ranges optimized gate driver, internal soft-start, temperature-
Advanced Burst-Mode Operation for Low Standby compensated precise current sources for loop
compensation, and self-protection circuitry.
Power Consumption
Pulse-by-Pulse Current Limit Compared with discrete MOSFET and PWM controller
solutions, the FSQ510 can reduce total cost,
Protection Functions: Overload Protection (OLP), component count, size and weight; while simultaneously
Internal Thermal Shutdown (TSD) with Hysteresis increasing efficiency, productivity, and system reliability.
Under-Voltage Lockout (UVLO) with Hysteresis This device provides a platform for cost-effective designs
of a valley switching flyback converters.
Internal Startup Circuit
Internal High-Voltage SenseFET: 700 V
Built-in Soft-Start: 5 ms
Applications
Auxiliary Power Supplies for LCD TV, LCD Monitor,
Personal Computer, and White Goods
Ordering Information
(1)
Output Power Table
Operating
Part Current RDS(ON) 230 VAC ± 15%(2) 85-265 VAC Packing
Package Junction
Number Limit (Max.) (3) Open (3) Open Method
Temperature Adapter (4) Adapter (4)
Frame Frame
FSQ510 7-DIP Rail
-40 to +130°C 320 mA 32 Ω 5.5 W 9W 4W 6W Tape &
FSQ510MX 7-MLSOP
Reel
AC
IN
Vstr
D
VS
Sync -PWM GND
Vfb Vcc
200ns
delay
UVLO VREF
0.7V / 0.1V 8.7V / 6.7V
VREF VREF
Idelay IFB
OSC
Vfb 3 S Q
6R
R R
360ns
LEB
Rsense
0.85V / 0.75V (0.4V)
S/S
5msec
OLP
S
TSD Q
4.7V
A/R R
1,2
GND
GND Vstr
GND D
FSQ510
Vfb
Sync Vcc
Pin Definitions
Pin # Name Description
1, 2 GND This pin is the control ground and the SenseFET source.
This pin is internally connected to the inverting input of the PWM comparator. The collector of
an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed
3 Vfb
between this pin and GND. If the voltage of this pin reaches 4.7 V, the overload protection
triggers, which shuts down the FPS.
This pin is internally connected to the sync-detect comparator for valley switching. In normal
4 Sync
valley-switching operation, the threshold of the sync comparator is 0.7 V/0.1 V.
This pin is the positive supply input. This pin provides internal operating current for both startup
5 VCC
and steady-state operation.
7 D High-voltage power SenseFET drain connection.
This pin is connected directly, or through a resistor, to the high-voltage DC link. At startup, the
8 Vstr internal high-voltage current source supplies internal bias and charges the external capacitor
connected to the VCC pin. Once VCC reaches 8.7 V, the internal current source is disabled.
Thermal Impedance
TA=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP).
θJC
(8)
Junction-to-Case Thermal Impedance 13 °C/W
Notes:
7. Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature
TJ enters into TSD.
8. Measured on the DRAIN pin close to plastic interface.
µs
(9)
tW Valley Detection Window Time 3.0
DMAX Maximum Duty Ratio VCC=11 V, VFB=3 V 54 60 66 %
DMIN Minimum Duty Ratio VCC=11 V, VFB=0 V 0 %
VSTART VFB=0 V, VCC Sweep 8.0 8.7 9.4 V
UVLO Threshold Voltage
VSTOP After Turn-on, VFB=0 V 6.0 6.7 7.4 V
tS/S Internal Soft-Start Time VSTR=40 V, VCC Sweep 3 5 7 ms
Burst-Mode Section
VBURH 0.75 0.85 0.95 V
VBURL Burst-Mode Voltage VCC=11 V, VFB Sweep 0.65 0.75 0.85 V
HYS 100 mV
Protection Section
ILIM Peak Current Limit di/dt=90 mA/µs 280 320 360 mA
VDS=40 V, VCC=11 V,
VSD Shutdown Feedback Voltage 4.2 4.7 5.2 V
VFB Sweep
IDELAY Shutdown Delay Current VCC=11 V, VFB=5 V 3.5 4.5 5.5 µA
(9)
tLEB Leading-Edge Blanking Time 360 ns
TSD 130 140 150 °C
Thermal Shutdown Temperature(9)
HYS 60 °C
Synchronous Section
VSH VCC=11 V, VFB=1 V 0.55 0.70 0.85 V
Synchronous Threshold Voltage
VSL VCC=11 V, VFB=1 V 0.05 0.10 0.15 V
tSync Synchronous Delay Time 180 200 220 ns
Total Device Section
Operating Supply Current
IOP VCC=11 V, VFB=5.5 V 0.8 1.0 mA
(Control Part Only)
ICH Startup Charging Current VCC=VFB=0 V,VSTR=40 V 1.0 1.2 mA
VSTR Supply Voltage VCC=VFB=0 V, VSTR Sweep 27 V
Note:
9. These parameters, although guaranteed, are not 100% tested in production.
1.20 1.20
1.15 1.15
1.10 1.10
Normalized
Normalized
1.05 1.05
1.00 1.00
0.95 0.95
0.90 0.90
0.85 0.85
0.80 0.80
-40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125
Figure 4. Operating Frequency (fOSC) vs. TA Figure 5. Peak Current Limit (ILIM) vs. TA
1.20 1.20
1.15 1.15
1.10 1.10
Normalized
Normalized
1.05 1.05
1.00 1.00
0.95 0.95
0.90 0.90
0.85 0.85
0.80 0.80
-40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125
Figure 6. Start Threshold Voltage (VSTART) vs. TA Figure 7. Stop Threshold Voltage (VSTOP) vs. TA
1.20 1.20
1.15 1.15
1.10 1.10
Normalized
Normalized
1.05 1.05
1.00 1.00
0.95 0.95
0.90 0.90
0.85 0.85
0.80 0.80
-40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125
Figure 8. Shutdown Feedback Voltage (VSD) vs. TA Figure 9. Maximum Duty Cycle (DMAX) vs. TA
1.20 1.20
1.15 1.15
1.10 1.10
Normalized
Normalized
1.05 1.05
1.00 1.00
0.95 0.95
0.90 0.90
0.85 0.85
0.80 0.80
-40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125
Figure 10. Feedback Source Current (IFB) vs. TA Figure 11. Shutdown Delay Current (IDELAY) vs. TA
1.20
1.15
1.10
Normalized
1.05
1.00
0.95
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Vref Vref
Ca
Idelay I FB VS signal
ICH
OLP R sense
VSD
Vref
6.7V/
VCC good
8.7V Figure 14. Valley Switching Pulse-Width
Internal Modulation (VS-PWM) Circuit
Bias
3. Synchronization: The FSQ510 employs a valley-
switching technique to minimize the switching noise and
Figure 13. Startup Block loss. The basic waveforms of the valley switching
converter are shown in Figure 15. To minimize the
2. Feedback Control: This device employs current- MOSFET switching loss, the MOSFET should be turned
mode control, as shown in Figure 14. An opto-coupler on when the drain voltage reaches its minimum value,
(such as the FOD817) and shunt regulator (such as the as shown in Figure 15. The minimum drain voltage is
KA431) are typically used to implement the feedback indirectly detected by monitoring the VCC winding
network. Comparing the feedback voltage with the voltage, as shown in Figure 15.
voltage across the Rsense resistor makes it possible to
VDS
control the switching duty cycle. When the reference pin
voltage of the shunt regulator exceeds the internal
reference voltage of 2.5 V, the opto-coupler LED current VRO
increases, pulling down the feedback voltage and
reducing the drain current. This typically occurs when the VRO
VDC
input voltage is increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current-
tF
mode control is employed, the peak current through the VSync
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 14. Assuming
that the 225 µA current source flows only through the
internal resistor (6R + R=12.6kΩ), the cathode voltage
0.7V
of diode D2 is about 2.8 V. Since D1 is blocked when
the feedback voltage (VFB) exceeds 2.8 V, the maximum 0.1V
voltage of the cathode of D2 is clamped at this voltage, 200ns Delay
clamping VFB*. Therefore, the peak value of the current MOSFET
Gate
through the SenseFET is limited.
ON ON
T s_A
B
tB=7.6µs
time T s_B
Switching Switching
disabled disabled
t1 t2 t3 t4
IDS IDS
Figure 18. Burst-Mode Operation
7. Advanced Valley Switching Operation: To
C
minimize switching loss and Electromagnetic tB=7.6µ s
Interference (EMI), the MOSFET turns on when the
T s_C
drain voltage reaches its minimum value in VS
converters. Due to the Discontinuous Conduction Mode
(DCM) operation, the feedback voltage is not changed,
despite the DC link voltage ripples, if the load condition IDS IDS
is not changed. Since the slope of the drain current is
changed depending on the DC link voltage, the turn-on
duration of MOSFET is variable with the DC link voltage tB=7.6µ s D
tW=3µs
ripples. The switching period is changed continuously
with the DC link voltage ripples. Not only the switching
at the instant of the minimum drain voltage, but also the Tsmax=10.6 µs
continuous change of the switching period, reduces
EMI. VS converters inherently scatter the EMI spectrum. Figure 19. Advanced VS Operation
6.60 9.90
6.20 9.30 6.70 10.70
1 4 1.09
0.56 0.94 1.252
1.62 0.10 M C B A 1.784
1.47
0.10 M C B A 0.56 LAND PATTERN RECOMMENDATION
0.36
TOP VIEW 7.62
A
3.60
3.20 3.70 MAX
0.10 C
2.54 0.35
C
0.10 MIN 7.62 0.20
SIDE VIEW
FRONT VIEW
NOTES: UNLESS OTHERWISE SPECIFIED
9° A. NO INDUSTRY STANDARD APPLIES TO
THIS PACKAGE
R0.20 B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
R0.20 MOLD FLASH, AND TIE BAR EXTRUSIONS
GAGE PLANE D. DIMENSIONS AND TOLERANCES PER
0.25 ASME Y14.5M-2009
8° E. DRAWING FILENAME: MKT-MLSOP07Arev2
0°
1.12
SEATING 0.72
3°
PLANE 1.60 REF
DETAIL A
SCALE 2:1
10.00
9.10
7 5
6.60
6.20
1 4
0.56
TOP VIEW 7.62
3.60
3.20 5.08 MAX
3.60
3.00 0.35
0.33 MIN 0.20
1.62 15°
1.42 0°
0.56 9.91
0.36 7.62
2.54
7.62 SIDE VIEW
FRONT VIEW
NOTES: UNLESS OTHERWISE SPECIFIED
A. THIS PACKAGE COMPLIES TO JEDEC MS-001,
VARIATION BA, EXCEPT FOR TERMINAL COUNT
(7 RATHER THAN 8)
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS.
D. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M-2009
E. DRAWING FILENAME: MKT-NA07BArev3
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower F-PFS OPTOPLANAR®
®*
AttitudeEngine™ FRFET®
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TinyBoost®
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Build it Now Green FPS e-Series PowerXS™ TinyLogic®
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CorePOWER GTO QFET® TinyPower
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CTL ISOPLANAR Quiet Series TinyWire
Current Transfer Logic Making Small Speakers Sound Louder RapidConfigure TranSiC
DEUXPEED® and Better™ TriFault Detect
Dual Cool™ MegaBuck TRUECURRENT®*
EcoSPARK® Saving our world, 1mW/W/kW at a time™ SerDes
MICROCOUPLER
EfficientMax SignalWise
MicroFET
ESBC SmartMax
MicroPak
® SMART START
MicroPak2 UHC®
Solutions for Your Success
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Fairchild SPM®
Fairchild Semiconductor® MotionMax UniFET
STEALTH
MotionGrid® VCX
FACT Quiet Series SuperFET®
FACT® MTi® VisualMax
SuperSOT-3
FastvCore MTx® VoltagePlus
SuperSOT-6
FETBench MVN® XS™
SuperSOT-8
mWSaver® Xsens™
FPS SupreMOS®
OptoHiT
SyncFET 仙童®
OPTOLOGIC®
Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I77
Authorized Distributor
Fairchild Semiconductor:
FSQ510MX FSQ510