® X00602MA

SENSITIVE 0.8A SCRs

MAIN FEATURES: A

Symbol Value Unit

G
IT(RMS) 0.8 A
K

VDRM/VRRM 600 V

IGT 200 µA

DESCRIPTION
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interrupters, overvoltage KG
A
crowbar protection in low power supplies,
TO-92
capacitive ignition circuits, ...

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (180° conduction angle) Tl = 85°C 0.8 A

IT(AV) Average on-state current (180° conduction angle) Tl = 85°C 0.5 A
ITSM Non repetitive surge peak on-state tp = 8.3 ms 10
current Tj = 25°C A
tp = 10 ms 9

I ²t I²t Value for fusing tp = 10ms Tj = 25°C 0.25 A2S

Critical rate of rise of on-state current
dI/dt IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs

IGM Peak gate current tp = 20 µs Tj = 125°C 1 A

PG(AV) Average gate power dissipation Tj = 125°C 0.1 W

Tstg Storage junction temperature range - 40 to + 125

°C
Tj Operating junction temperature range - 40 to + 125

January 2002 - Ed: 5 1/5

X00602MA
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions X00602MA Unit

MIN. 15 µA
IGT
VD = 12 V RL = 140 Ω MAX. 200 µA
VGT MAX. 0.8 V
VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C MIN. 0.2 V
VRG IRG = 10 µA MIN. 5 V
IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA
IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA
dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 125°C MIN. 25 V/µs
VTM ITM = 1 A tp = 380 µs Tj = 25°C MAX. 1.35 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
Rd Dynamic resistance Tj = 125°C MAX. 245 mΩ
IDRM Tj = 25°C MAX. 1 µA
VDRM = VRRM RGK = 1 kΩ
IRRM Tj = 125°C 100

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-l) Junction to lead (DC) 70 °C/W
Rth(j-a) Junction to ambient (DC) 150 °C/W

PRODUCT SELECTOR

Part Number Voltage Sensitivity Package

X00602MA 600 V 200 µA TO-92

ORDERING INFORMATION

X 006 02 M A Blank 1AA2

SENSITIVE
PACKING MODE:
SCR
1AA2: Bulk
SERIES PACKAGE: 2AL2: Ammopack
VOLTAGE: A: TO-92 5AL2: Tape & reel
CURRENT: 0.8A
M: 600V

SENSITIVITY:
02: 200µA

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

X00602MA 1AA2 X0602MA 0.2 g 2500 Bulk

X00602MA 2AL2 X0602MA 0.2 g 2000 Ammopack
X00602MA 5AL2 X0602MA 0.2 g 2000 Tape & reel

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 X00602MA

Fig. 1: Maximum average power dissipation Fig. 2-1: Average and D.C. on-state current
versus average on-state current. versus lead temperature.

P(W) IT(av)(A)
0.65 1.1
D.C.
0.60 α = 180° 1.0
0.55 0.9
0.50
0.45 0.8
0.40 0.7
0.35 0.6 α = 180°
0.30 0.5
0.25 0.4
0.20 360° 0.3
0.15
0.10 0.2
0.05 IT(av)(A) α 0.1 Tlead(°C)
0.00 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125

Fig. 2-2: Average and D.C. on-state current Fig. 3: Relative variation of thermal impedance
versus ambient temperature (device mounted on junction to ambient versus pulse duration.
FR4 with recommended pad layout).

IT(av)(A) K = [Zth(j-a)/Rth(j-a)]
1.0 1.00
0.9
0.8 D.C.
0.7
0.6 α = 180°
0.5 0.10
0.4
0.3
0.2
0.1 Tamb(°C) tp(s)
0.0 0.01
0 25 50 75 100 125 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 4: Relative variation of gate trigger current, Fig. 5: Relative variation of holding current
holding current and latching current versus versus gate-cathode resistance (typical values).
junction temperature.

IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] IH[Rgk]/IH[Rgk=1kΩ]

3.5
1.6
1.4 3.0
1.2 2.5
1.0
2.0
0.8
IH & IL 1.5
0.6 IGT
0.4 1.0
0.2 0.5
Tj(°C) Rgk(kΩ)
0.0 0.0
-40 -20 0 20 40 60 80 100 120 140
1E-2 1E-1 1E+0 1E+1 1E+2

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X00602MA

Fig. 6: Relative variation of dV/dt immunity Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values). versus gate-cathode capacitance (typical
values).

dV/dt[Rgk]/dV/dt[Rgk=1kΩ] dV/dt[Cgk]/dV/dt[Rgk=1kΩ]
1E+2 20

1E+1 10

5
1E+0

1E-1 2

Rgk(kΩ) Cgk(nF)
1E-2 1
1E-2 1E-1 1E+0 1E+1 1 2 5 10

Fig. 8: Surge peak on-state current versus Fig. 9: Non-repetitive surge peak on-state
number of cycles. current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.

ITSM(A) ITSM(A),I 2t(A2s)

10 100.0
Tj initial = 25 °C
9 ITSM
tp=10ms
8
Onecycle
7
Nonrepetitive 10.0
6 Tjinitial=25°C
5
4 Repetitive
Tamb=25°C
3 1.0
I2t
2
1 Number of cycles tp(ms)
0 0.1
1 10 100 1000 0.01 0.10 1.00 10.00

Fig. 10: On-state characteristics (maximum

values).

ITM(A)
1E+1
Tj max.:
Vto = 0.85V
Rd = 245mΩ

1E+0
Tj = Tjmax.

Tj = 25°C
1E-1

VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5

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 X00602MA

PACKAGE MECHANICAL DATA

TO-92 (Plastic)

DIMENSIONS

REF. Millimeters Inches

A
a Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B C B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
F D E E 12.70 0.500
F 3.70 0.146
a 0.50 0.019

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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