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Phy110 Unit V SSP
Phy110 Unit V SSP
K B
me 3me
The ratio of the electrical and thermal conductivities is
independent of the electron gas parameters;
2
Lorentz K 2 kB 8 2
2.45 x10 W K
number T 3 e
K
L 2.23 x108W K 2 For copper at 0 C
T
Drawbacks of Classical Free Electron Theory
P=Pressure
d= Diameter of the gas molecules.
R= Universl gas constant=8.3145
J/mol K
T= Temperature in absolute scale
Relaxation Time
Educational Video 1
Educational Video 2
Quantum free electron Theory
Education
al Video
Drift and Diffusion Currents
● Current
Generated by the movement of charged particles
(negatively charged electrons and positively charged
holes).
● Carriers
The charged electrons and holes are referred to as carriers
N-type
E
Vdn e
I
Drift Currents
● Drift Current Density (p-type semiconductor)
An electric field E applied to p-type semiconductor
with a large number of holes.
• Produces a force on the holes in the same
direction, because of the positive charge on the
holes.
• The holes acquire a drift velocity, Vdp(in cm/s):
P-type
p Vdp
I
Diffusion Current
1
For E > EF : f ( E EF ) 0
1 exp ()
1
For E < EF : f ( E EF ) 1
1 exp ()
EF
0 1 f(E)
Fermi-Dirac distribution: Consider T > 0 K
Temperature dependence of Fermi-Dirac
distribution
Temperature dependence of Fermi-Dirac
distribution
1. https://www.youtube.com/watch?v=BsZe9MVv8Yc
2. https://www.youtube.com/watch?v=3npADYVtQOM&t=15s
3. https://www.youtube.com/watch?v=y865nLVyQsY
4. https://www.youtube.com/watch?v=Xh2YxnIM-3I
Electronic structure of Solids
Overlapping levels
Outer levels begin to interact
gas
Electron energy
Band Formation in Solid
3
2mh k T 2 EV E F
p= 2 2 . exp
h KT
E E
E F v c
[ since loge1 = 0]
2
Direct Band-gap
Indirect Band-gap
Semiconductor
Semiconductor
Those materials for which maximum of valence band and minimum of conduction band
lie for same value of k, called direct bandgap materials (i.e. satisfies the condition of
energy and momentum conservation). For example: GaAs, InP, CdS..etc
Those materials for which maximum of valence band and minimum of conduction
band do not occur at same value of k, called indirect bandgap materials. For
example: Si and Ge
Direct Band Gap Absorption
A Direct Vertical Transition
E
Conservation of Energy
h = EC(min) - Ev (max) = Egap
K (wave number)
h
The Photon Conservation of
Momentum Momentum
is Negligible Kvmax + qphoton = kc
Indirect Band Gap Absorption
K (wave number) h
Indirect Band Gap Semiconductor
Hall Effect
In a magnetic Field B, the electron experiences a force
perpendicular to its velocity. A current j, causes a build up
of charge at the edges which generates an Electric field E
which balances the Lorentz force
Initially, v vx x̂ vy ŷ vz ẑ
E Ex x̂
B Bz ẑ
Electrons flowing without a magnetic field
semiconductor slice
t
+ _
d
I I
When the magnetic field is turned on ..
I qBv
B-field
As time goes by...
high
potential
qE
low
qBv = qE potential
Finally...
VH
I
B-field
A quick review: The Lorentz Force
F = q[E + (v B)]
A quick review: The Lorentz Force
The Velocity Filter:
E
Undeflected trajectories in crossed E & B fields: v = B
•Orbit radius:
mv p
r
qB qB
momentum (p) filter
Derivation of Hall voltage and Hall coefficient
Solar cells are often bundled together to make larger units called
solar modules, themselves coupled into even bigger units known
as solar panels.
Just like the cells in a battery, the cells in a solar panel are
designed to generate electricity; but where a battery’s cells make
electricity from chemicals, a solar panel’s cells generate power by
capturing sunlight instead.