GUIDED REVISION JEEJEE (Advanced) 2022

(Advanced) 2022
ENTHUSIAST & LEADER COURSE
ENTHUSIAST & LEADER COURSE

PHYSICS GR # SEMICONDUCTOR & COMMUNICATION, COLOUR CODE FOR RESISTOR

1. Diffusion current in a p-n junction is greater than the drift current in magnitude :-
(1) If the junction is forward-biased (2) If the junction is reverse-biased
(3) If the junction is unbiased (4) In no case.
2. When a semiconductor is doped its electrical conductivity :
(1) Increases
(2) Decreases in the direct ratio of the doped material
(3) Decreases in the inverse ratio of the doped material
(4) Remains unaltered
3. The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert
that :-

X Y Z
(1) Sample X is undoped while samples Y and Z have been doped with a trivalent and a pentavalent
impurity respectively
(2) Sample X is undoped while both samples Y and Z have been doped with a pentavalent
impurity
(3) Sample X has been doped with equal amounts of trivalent and pentavalent
impurities while samples Y and Z are undoped
(4) Sample X is undoped while samples Y and Z have been doped with a pentavalent and a trivalent
impurity respectively
4. A conductor and a semiconductor are connected in parallel as shown in the figure. At a certain voltage
both ammeter register the same current. If the voltage of the DC source is increased then the
Conductor
A1
Semiconductor
A2

(1) ammeter connected to the semiconductor will register higher current than the ammeter connected to
the conductor
(2) ammeter connected to the conductor will register higher current than the ammeter connected to the
semiconductor
(3) ammeters connected to both semiconductor and conductor will register the same current
(4) ammeters connected to both semiconductor and conductor will register no change in the current
5. The mobility of electrons and holes in a sample of instrinsic germanium at room temperature are 0.36
and 0.14 m2/V-s. If electron and holes densities each are equal to 2.5 × 1019/m3 then conductivity of
germanium will be (in ohm meter) :
(1) 2 (2) 4 (3) 6 (4) 8
6. The forbidden energy gap in Ge is 0.72 eV. Given, hc = 12400 eV –Å. The maximum wavelength of
radiation that will generate and electron hole pair is approximately equal to :-
(1) 17222 Å (2) 1722 Å (3) 172220 Å (4) 172.2 Å

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7. In the energy band diagram of a material shown below, the open circles and filled circles denote holes
and electrons respectively. The material is :-

(1) an n-type semiconductor (2) a p-type semicoductor

(3) an insulator (4) a metal
8. The output across the diode in the given circuit in figure.

(1) Would be zero at all times.

(2) Would be like a half wave rectifier with positive cycles in output.
(3) Would be like a half wave rectifier with negative cycles in output.
(4) Would be like that of a full wave rectifier.
9. In the given circuit, the voltage across the load is maintained at 12 V. The current in the Zener diode
varies from 0-50 mA. What is the maximum wattage of the diode?

20V

(1) 12 W (2) 6 W (3) 0.6 W (4) 1.2 W

10. Two identical p-n junctions may be connected in series with a battery in three distinct modes as shown
in figure. The potential drops across each of the two p-n junctions are equal corresponding to :

pn n p pn p n n p n p

+ – + – + –
circuit-1 circuit-2 circuit-3

(1) Circuit 2 only (2) Circuit 1 and 2 (3) Circuit 2 and 3 (4) Circuit 3 only

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11. The circuit has two oppositely connected ideal diodes in parallel. What is the current flowing through
the Battery ?

4W

D1 D2
12V
3W 2W

(1) 1.71 A (2) 2.0 A (3) 2.31 A (4) 1.33 A

12. In the case of forward biasing of a p-n junction diode, which one of the following figures correctly
depicts the direction of conventional current (indicated by an arrow mark)?
p – +
– + n p – +
– + n
– + – +
– + – +
(1) (2)

p – +
– + n p – +
– + n
– + – +
– + – +
(3) (4)

13. Ge and Si diodes conduct at 0.3 V and 0.7V respectively. In the following figure if Ge diode connection
is reversed the value of V0 change by.

Ge
V0

Si 5kW
12V

(1) 0.2 V (2) 0.4 V (3) 0.6 V (4) 0.8 V

14. The given graph represents V - I characteristic for a semiconductor device.

I
A
V
B

Which of the following statement is correct ?

(1) It is V - I characteristic for solar cell where, point A represents open circuit voltage and point B short
circuit current.
(2) It is a for a solar cell and point A and B represent open circuit voltage and current, respectively.
(3) It is for a photodiode and points A and B represent open circuit voltage and current, respectively.
(4) It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.

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15. If in a p-n junction, a square input signal of 10 V is applied as shown,

+5V

RL

–5V

then the output across RL will be :

10 V 5V

(1) (2) (3) (4)

–5 V
–10 V

16. The output voltage as a function of time is:

R
D
Vi=10sin(2t) V0
5V

V0 V0 V0 V0
+10V
+5V +5V
(1) (2) t (3) t (4) t
t

17. A transistor is connected in common emitter (CE) configuration. The collector supply is
8 V and the voltage drop across a resistor of 800 W in the collector circuit is 0.5 V. If the current gain
factor a is 0.96, find the base current.
(1) 48 µA (2) 44 µA (3) 26 µA (4) 15 µA
18. In an experiment input characteristics are shown for CE configuration of n-p-n transistor for different
output voltages. Here :-

IB VCE2
VCE 1

VBE

(1) VCE1 > VCE 2 (2) VCE1 = VCE 2 (3) VCE1 < VCE 2 (4) None of these
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19. In the transistor circuit shown, assume that the voltage drop between the base and the emitter is 0.5 V.
What will be the ratio of the voltage across resistances R2 & R1 in order to make this circuit function as
a source of constant current, I = 1mA ?

LOAD
R2

Input
7.5 v

R1 2kW

(1) 4.5 (2) 3.0 (3) 2.5 (4) 2.0

20. Transfer characteristics [(output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE
configuration is as shown in the figure. For using transistor as a switch, it is used.

V0 I II III

Vi

(1) in region II (2) in region I (3) in region III (4) both in region (I) & (III)
21. For given n-p-n transistor RB = 100 kW. The potential drop across the base emitter junction is 0.6 V then
find VBB. If IC = 1 mA and b = 100

C
RC
RB B
VCC
VBB e

(1) 2.6 V (2) 1.6 V (3) 10.6 V (4) 2 V

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22. For an npn transistor Rout = 1.2 × 105 W,Rin = 6000 W, b = 50. It is connected to amplify an input signal
in active mode in common emitter configuration. The input signal is :

1mV
t
–1mV

The output signal looks like.

1V 1V
0.5V 0.5V

(1) t (2) t (3) t (4) t

–0.5V –0.5V
–1V –1V

23. An ideal diode is connected in a circuit with resistance R = 50W and V = 10 volt as shown in figure,
maximum and minimum value of output voltage, when no load applied is :

Vinput

+25
R = 50W
Output

–25
V = 10V

(1) 10 V, – 25V (2) 10 V, – 15V (3) 25 V, –25V (4) 25 V, – 15V

24. The real time variation of input signals A and B are as shown below. If the inputs are fed into NAND
gate, then select the output signal from the following

B
A
Y
B
t(s)

Y Y

(1) (2) (3) Y (4) Y

0 2 4 6 8 t(s) 0 2 4 6 8 t(s) 0 2 4 6 8 t(s) 0 2 4 6 8 t(s)

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25. Correct output for given logic circuit and inputs is :-

A
B C

A B

t
T0 2T 0 2T0

output output output output

(1) (2) (3) (4) t

t T0 2T0

26. For a electronic system two input waveform are as shown.

A
Output

Then output waveform are as shown.

(1) (2)

(3) (4)

27. If n-p-n transistor is to be considered to be equivalent to two diodes connected (according to biasing
only). Which of the following figures is the correct one:-

C C
(1) E (2) E
B B

C C
(3) E (4) E
B B

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28. In a digital circuit for three input signals (A, B and C) the final output (Y) should be such that for inputs
A B C
0 0 0
0 0 1
0 1 0
the output (Y) should be 0 and for all other cases it should be 1. Which of the following digital circuits
will give such output ?
A Y A
B
(1) B (2) Y
C C

A A Y
B
(3) Y (4) B
C C
29. The logic circuit shown has the input waveforms 'A' and 'B' as shown. Pick out the CORRECT output
waveform :-

A
Input A
Y
Input B
B

(1) (2)

(3) (4)

30. The output (X) of the logic circuit shown in figure will be :
A X
B
(1) X = A + B (2) X = A.B (3) X = A.B (4) X = A.B
31. Give the truth table for the circuit shown in figure :

A x
B

A B X A B X A B X A B X
0 0 0 0 0 1 0 0 0 0 0 1
0 1 1 0 1 0 0 1 0 0 1 1
(1) (2) (3) (4)
1 0 1 1 0 0 1 0 0 1 0 1
1 1 0 1 1 1 1 1 1 1 1 0

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32. Which one of the following is INCORRECT statement in the transmission of electromagnetic waves?
(1) Ground wave propagation is for high frequency transmission
(2) Sky wave propagation is facilitated by ionospheric layers
(3) Space wave is used for satellite communication
(4) Very high frequency waves cannot be reflected by the ionospheric layers
33. In AM transmission, band width of transmission is 10 kHZ and carrier frequency is 100 kHZ, then side
band frequencies are given by :-
(1) 90 kHZ & 110 kHZ (2) 95 kHZ, 105 kHZ
(3) 100 kHZ, 110 kHZ (4) 90 kHZ, 100 kHZ
34. If the area to be covered for a TV telecast is doubled, then the height of transmitting antenna (TV tower)
will have to be
(1) Doubled (2) halved (3) quadrupled (4) kept unchanged
35. The phenomenon involved in the reflection of the radiowaves by ionosphere is similar to :-
(1) Reflection of light by a plane mirror.
(2) Total internal reflection of light in air during a mirage
(3) Dispersion of light by water molecules during the formation of a rainbow
(4) Scattering of light by the particles of air
36. Figure shows the waveform of an amplitude modulated wave. Its modulation factor is

V (in Volt)

10

2
t
-2

-10

1 3 2 2
(1) (2) (3) (4)
5 4 3 5
37. In AM transmission, band width of transmission is 10 kHZ and carrier frequency is 100 kHZ, then side
band frequencies are given by :-
(1) 90 kHZ & 110 kHZ (2) 95 kHZ, 105 kHZ
(3) 100 kHZ, 110 kHZ (4) 90 kHZ, 100 kHZ

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