How did you Drive the MOSFETS?

MOSFETs are capable of being switched at much higher frequencies due to

the absence of minority carrier transport. However, the speed of switching
is limited by two factors: the transit time of electrons across the drift region
and the time required to charge and discharge the input Gate and ‘Miller’
capacitances. The figure below shows a symbol of an N-Channel MOSFET
and an equivalent model with three inter-junction parasitic capacitances:
CGS, CGD, and CDS.

The switching performance of MOSFETs is primarily determined by how

quickly the voltages can be changed across these capacitors. Therefore, in
high-speed switching applications, the parasitic capacitances of the
device are the most important parameters. Two of these capacitors, the
CGS and CGD capacitors, correspond to the actual geometry of the
device, while the CDS capacitor is the capacitance of the base collector
diode of the parasitic bipolar transistor (body diode).

A MOSFET's transfer characteristic (ID vs. VGS) is shown in the figure below.

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When the VGS value is below VGS(th), the drain current is negligible, but
the device is in its linear (Ohmic) region. Applying large values of VDS
concurrently in this region can cause a considerable amount of localized
heating of the junction, which can lead to device failure. Therefore, when
using a MOSFET as a switch, any operation in its linear region could cause
overheating or device failure.

The driver's job is to bring the MOSFET quickly into saturation from its
off-state. If Vcc is below the minimum required value, linear operation can
occur, which can be detrimental to the MOSFET.

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