Solution

Class 12 - Chemistry

SOLID STATE
Section A
1. (a) 4
1
Explanation: 8 corners atoms × 8 atom per unit cell =1 atom
1
6 face centred atoms × atom per unit cell = 3 atoms
2

Total no. of atoms per unit cell= 1 atom + 3 atoms = 4 atoms

2. (a) 32%
Explanation: Packing efficiency for body centred cubic is 68% which represents total filled space in the
unit cells about 68%. Hence, empty space in a body centred arrangement is 100 - 68 = 32 %.
3. (b) Assertion and reason both are correct statements but reason is not correct explanation for assertion.
Explanation: Graphite is a good conductor of electricity because three of its four electrons are involved in
bonding and 1 electron is free for conduction. But in the case of the diamond, all four electrons are
involved in bond formation. So no electron is available for conduction hence diamond is a bad conductor
of electricity. Graphite has a layered structure where layers are held by weak van der wall force, that’s why
it is soft in nature. In the case of diamond, it has a hard & compact 3D structure with strong forces acting
gives it hard and brittle structure.
So, Assertion and reason both are correct statements but the reason is not the correct explanation for the
assertion.
4. (b) Assertion and reason both are correct statements but the reason is not the correct explanation for the
assertion.
Explanation: The FCC has maximum packing efficiency of 74% which in the case of BCC is 68% and Simple
cubic has 52.4%. FCC has coordination number 12.
5. (c) Assertion is correct statement but reason is wrong statement.
Explanation: The conductivities of semiconductors lies in between the conductors and insulators and of
range 10–6 – 104 ohm–1m–1. But intermediate conductivity is due to the small energy gap between valance
and conduction band which is zero in case of conductors and very large in case of insulators. It has a filled
valance band. So the assertion is correct and the reason is wrong.
6. Density of crystal like AgCl showing Frenkel defect does not change because no ion is missing from the
crystal, infarct they remain occupied interstitial sites.
7. Coordination number of each ion in NaCl crystal is 6 as shown in figure.

8. It is a Covalent or Network solid like SiO2(quartz) or SiC or C(diamond).

9. The Point defects or Atomic imperfections: When deviations exist from the regular arrangements of
particles around a point or atom in a crystalline substance, the defects are called as point defects.
Section B
10. The correct order of the match is (a) - iii, (b) - i, (c) - iv, (d) - ii.
11. i. The number of nearest neighbours of any constituent particle present in the crystal lattice is called its
coordination number.
ii. The coordination number of atoms.
a. in a cubic close-packed structure is 12, and
b. in a body-centred cubic structure is 8.

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12. Doping is a process of adding impurities to intrinsic semiconductor in order to increases its electrical
conductivity.
For example, silicon can be doped with boron to increase its conductivity results in p-type semiconductor.
13. F-centre is responsible for the colour and paramagnetic behaviour of the solid.
14. Crystalline solids are anisotropic in nature, it means some of their physical properties like refractive index,
electrical conductivity etc. are different in different directions.
15. If the number of an atom is = N then the number of tetrahedral voids is = 2N.
So, the number of tetrahedral voids formed is equal to twice the number of atoms of element B, and only 2
rd
3

of these are occupied by the atoms of element A.

2
Hence the ratio of the number of atoms of A and B is 2 × ( 3 ) : 1 or 4 : 3 and the formula of the compound is
A4B3.
Section C
16. When a solid is heated, vacancy defect is produced in the crystal. This is because on heating some atoms or
ions leave the lattice site completely, some lattice sites become vacant. As a result of this defect, the density of
the substance decreases because some atoms ions leave the crystal completely.
17. Number of N ion in each fcc unit cell = 4
Number of tetrahedral voids= 4 × 2 =8
1 8
Fraction occupied by(M + ) ions = 8 × 3
=
3
3
= 4×
8
8 2
⇒ M : N = : 4 = : 1
3 3

⇒ M2 N3

Coordination number of M+ ion = 4

18. Let the number of M2+ ion = x
Then, the number of M3+ ion will be = (0.96 - x)
Total no. of cations = 2x + 3(0.96 - x) = 2x+2.88-3x
= - x + 2.88
No. of anions O2- = - 2 x 1 = - 2
No. of cations = No. of anions
⇒ - x + 2.88 = 2

⇒ - x = - 2.88 + 2

⇒- x = - 0.88

⇒ x = 0.88

Percentage of M2+ ion=

0.88
× 100 = 91.67%
0.96

Percentage of M3+ =
0.08

0.96
× 100 = 8.33%
Section D
19. The conductivity of semiconductors like silicon or germanium can be increased by adding a certain amount
of impurity or foreign particles in it, this is called doping. The doping can be done either by adding an
electron-rich compound (Example phosphorus, As) or an electron deficit compound (example boron, Al, Ga).
The doped semiconductors are called extrinsic semiconductors and have a conductivity greater than pure
semiconductors called intrinsic semiconductors. This impurity causes an electronic effect on them. When
doped with an electron-rich compound, such as silicon group 14 element doped with phosphorus group 15
element an unpaired electron becomes delocalized. These delocalized electrons increase the conductivity of
doped silicon due to negatively charged electrons when placed in the electric field. Silicon doped with an
electron-rich impurity is called an n-type semiconductor. Similarly, when silicon group 13 element is doped
with Aluminium group 13 element electron deficit impurity, a delocalized hole is generated with acts as
positive charge ion as increases conductivity of silicon when placed in an electric field. Silicon doped with
electron deficit impurity is called a p-type semiconductor.

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