A rectifier diode is a two-lead semiconductor that allows current to pass

in only one direction. Generally, the P-N junction diode is formed by

joining together n-type and p-type semiconductor materials. The P-type
side is called the anode and the n-type side is called the cathode.

This diode is capable to conduct the values of current which

changes from mA to a few kA & voltages up to a few kV.
This P-N junction has two terminals which can be called as
electrodes and due to this reason, it is called to be a “DIODE
“(Di-ode).
These diodes are not famous but still used Ge or gallium
arsenide-based semiconductor diodes. Ge diodes have less
allowable reversed voltage as well as a lesser allowable
junction temperature. The Ge diode has a benefit as compared
to Si diode that is low threshold voltage value while operating
in a forward-bias.
One of the most problems is the avoidance of thermal runaway
wherever a diode enhances its temperature which leads to an
amplify the current with the device until the device is
destroyed.

the Si diodes reverse leakage current is generally extracted at

25°C of an ambient temperature but it is approximately twice
for every 10°C. Once the temperature is increased then the
forward junction potential will be decreased to 2 mV to 3 mV
for each 1°C of temperature.

The simple multimeter is mainly used to decide the rectifier

diode’s polarity like anode or cathode
In forward-bias, the Ohmmeter will specify the estimated value
of the diode’s forward voltage that is nearly 0,7.
In reverse-bias, the ohmmeter will specify ‘1’”, which means it
is extremely high resistance