SKM 195GB066D

Absolute Maximum Ratings   ,-.#     ! (

Symbol Conditions Values Units
IGBT
 0  ,- . $22 
& 0  +9- .   ,- . ,$- '
  :2 . ,22 '
&4; &4;,%&  <22 '
5 = ,2 
    >$2 ? 5 1 +- ? 0  +-2 . $ A
 @ $22 
SEMITRANS® 2
Inverse Diode
&B 0  +9- .   ,- . ,22 '
Trench IGBT Modules   :2 . +>2 '
&B4; &B4;,%&B  <22 '
&B ;   +2  ?  / 0  +9- . +<22 '
SKM195GB066D
Module
&4;  ,22 '
0 8 <2 /// C +9- .
  8 <2 /// C +,- .
  '# +  / <222 
Features
  ,-.#     ! (
    Characteristics
         Symbol Conditions min. typ. max. Units
      IGBT
     !!  5 5  # &  >#, ' - -#: $#- 
     "#
& 5  2 #    0  ,- . 2#+> 2#>: '
!    $ % &
2 0  ,- . 2#D + 
Typical Applications* 0  +-2 . 2#:- 2#D 
 '     (  5  +-  0  ,-. ,#: <#- E
 )* 0  +-2. <#> $ E
     (    &   ,22 '# 5  +-  0  ,-. / +#<- +#D 
0  +-2. +#9 ,#+ 
Remarks /
 +,#> B
       (     ,-# 5  2  !  + ;F 2#99 B
  +,-. %/#
 2#>9 B
(   /   ( !
0 1+-2. G5 5  8:///C+- +-22 

  (3 ) ! ! 45 45  0  . , H

 6 (  +$2
 7  !  8  (  45  > E   >22 $:
"   ( /  & ,22' +< I
(!! 45!!  > E 0  +-2 . -,2
! 5  8:JC+- <D
!! : I
408   &5K 2#,, LJM

GB

1 22-03-2011 GIL © by SEMIKRON

SKM 195GB066D
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
B   &B   ,22 '? 5  2  0  ,- . / +#< +#$ 
B2 0  ,- . 2#D- + 
B 0  ,- . ,#> > E
&44; &B  ,22 ' 0  +-2 . +22 '
G (J(  ,222 'JA >2 A
 5  8: ?   >22  -#$ I
408N   (( 2#< LJM
SEMITRANS® 2 Module
O >2 
Trench IGBT Modules 4PCP  /#   8   ,- . 2#9- E
  +,- . + E
48    (  2#2- LJM
SKM195GB066D ;     7 ;$ > - Q
;     ;- ,#- - Q
 +-2 

Features
This is an electrostatic discharge sensitive device (ESDS), international standard
   
IEC 60747-1, Chapter IX.
        
      * The specifications of our components may not be considered as an assurance of
     !!  component characteristics. Components have to be tested for the respective
     "# application. Adjustments may be necessary. The use of SEMIKRON products in
!    $ % & life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
Typical Applications* our staff.
 '     (
 )*
     ( 
Remarks
       ( 
  +,-. %/#
(   /   ( !
0 1+-2.
  (3 ) ! ! 45
 6
 7  !  8  (
"   ( /

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2 22-03-2011 GIL © by SEMIKRON

SKM 195GB066D
Zth
Symbol Conditions Values Units
Zth(j-c)l
4 + +$2 7JM
4 , <+ 7JM
4 > +$ 7JM
4 < > 7JM
  + 2#2,9$
  , 2#2<2$
  > 2#22+
  < 2#22++
®
SEMITRANS 2 Zth(j-c)D
4 + ,-2 7JM
4 , ++2 7JM
Trench IGBT Modules 4 > >- 7JM
4 < - 7JM
  + 2#2-<
  , 2#2+,
SKM195GB066D  > 2#22+-

  < 2#2229

Features
   
        
     
     !! 
     "#
!    $ % &

Typical Applications*
 '     (
 )*
     ( 
Remarks
       ( 
  +,-. %/#
(   /   ( !
0 1+-2.
  (3 ) ! ! 45
 6
 7  !  8  (
"   ( /

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3 22-03-2011 GIL © by SEMIKRON

SKM 195GB066D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

4 22-03-2011 GIL © by SEMIKRON

SKM 195GB066D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic

Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge

5 22-03-2011 GIL © by SEMIKRON

SKM 195GB066D
UL recognized, file no. E 63 532

 N $+

5K  N $+

6 22-03-2011 GIL © by SEMIKRON