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    The document discusses PN junction diodes and their operation. It explains that a PN junction diode is formed by joining a P-type semiconductor with an N-type semiconductor. In the junction region, majority carriers diffuse across and become minority carriers, leaving an area devoid of charge carriers known as the depletion region or space charge region. The diffusion of carriers results in a built-in potential barrier that prevents current from flowing through the diode under reverse bias but allows it under forward bias.

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    The document discusses PN junction diodes and their operation. It explains that a PN junction diode is formed by joining a P-type semiconductor with an N-type semiconductor. In the junction region, majority carriers diffuse across and become minority carriers, leaving an area devoid of charge carriers known as the depletion region or space charge region. The diffusion of carriers results in a built-in potential barrier that prevents current from flowing through the diode under reverse bias but allows it under forward bias.

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    © All Rights Reserved
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    7 views3 pages

    Ead Text

    Uploaded by

    Rock Star
    The document discusses PN junction diodes and their operation. It explains that a PN junction diode is formed by joining a P-type semiconductor with an N-type semiconductor. In the junction region, majority carriers diffuse across and become minority carriers, leaving an area devoid of charge carriers known as the depletion region or space charge region. The diffusion of carriers results in a built-in potential barrier that prevents current from flowing through the diode under reverse bias but allows it under forward bias.

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    of 3

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    EC-251

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