Professional Documents
Culture Documents
FEATURES
z Low noise and high gain.
NF=1.1dB TYP.,Ga=11dB TYP.
@VCE=10V,IC=7mA, f=1.0GHz
z High power gain. MAG=13dB TYP.
@VCE=10V,IC=20mA,f=1.0GHz.
JS
APPLICATIONS SOT-23
z Designed for low noise amplifier at VHF,UHF and CATV band.
MI
ORDERING INFORMATION
CR
Collector Dissipation
to
PC 200 mW
www.jsmsemi.com 第1/4页
2SC3356-R25
Silicon Epitaxial Planar Transistor
f=1GHz
nd
CLASSIFICATION OF hFE
uc
Range 125-250
to
Marking R25
r
www.jsmsemi.com 第2/4页
2SC3356-R25
Silicon Epitaxial Planar Transistor
www.jsmsemi.com 第3/4页
2SC3356-R25
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
A SOT-23
Dim Min Max
E A 2.70 3.10
B 1.10 1.50
K B
C 1.0 Typical
JS
D 0.4 Typical
J E 0.35 0.48
MI
D
G 1.80 2.00
G H 0.02 0.1
CR
J 0.1 Typical
H
O
K 2.20 2.60
C
All Dimensions in mm
Se
SOLDERING FOOTPRINT
mi
0.95 0.95
co
nd
uc
2.00
to
0.90
r
Unit : mm
0.80
PACKAGE INFORMATION
www.jsmsemi.com 第4/4页